Abstract: A method for depositing a film comprising silicon and oxygen onto a substrate includes (a) providing a substrate in a reactor; (b) introducing into the reactor at least one silicon precursor compound selected from the group consisting of Formulae A, B, and C as described herein, (c) purging the reactor with a purge gas; (d) introducing at least one of an oxygen-containing source and a nitrogen-containing source into the reactor; and (e) purging the reactor with the purge gas, wherein the steps b through e are repeated until a desired thickness of resulting silicon-containing film is deposited; and (f) treating the resulting silicon-containing film with R3xSi(NR1R2)4-x wherein R1-3 are the same as aforementioned, preferably methyl or ethyl; and x=1, 2, or 3; and wherein the method is conducted at one or more temperatures ranging from about 20° C. to 300° C.

Abstract: Methods for selective deposition of silicon oxide films on metal or metallic surfaces relative to dielectric surfaces are provided. A dielectric surface of a substrate may be selectively passivated relative to a metal or metallic surface, such as by exposing the substrate to a silylating agent. Silicon oxide is then selectively deposited on the metal or metallic surface relative to the passivated oxide surface by contacting the metal surface with a metal catalyst and a silicon precursor comprising a silanol.

Abstract: Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including an alkoxide compound represented by the following general formula (1): where R1 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, R2 and R3 each independently represent an alkyl group having 1 to 5 carbon atoms, and z1 represents an integer of from 1 to 3.

Abstract: A method of coating a polyimide film and a method of fabricating a display panel are provided by the embodiments of the present invention. The method of coating a polyimide film includes providing a glass substrate and at least one nozzle; forming a nanomaterial filled graphic letterpress on the glass substrate, wherein the nanomaterial filled graphic letterpress is formed with a plurality of protrusions; and spraying a polyimide liquid on the nanomaterial filled graphic letterpress by the at least one nozzle to form a polyimide film.

Abstract: The invention relates to methods for the production of trialkylindium (InR3), wherein the production takes place in a reaction mixture that contains at least one alkylindium halide, a trialkylaluminum (AlR3), a carboxylate, and a solvent, wherein R is chosen independently of one another from C1-C4 alkyl, and X is chosen independently of one another from Cl, Br, and I.

Abstract: Described herein are compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one silicon precursor compound, wherein the at least one silicon precursor compound is selected from the following Formulae A and B: as defined herein.

Abstract: Disclosed is a retro-reflective fabric, having an inner surface and an outer surface; one or more strands of retro-reflective yarn incorporated into the fabric; and a reflective ink coupled to the outer surface of the fabric. Also provided is a method of making a retro-reflective fabric, including: providing a coated retro-reflective yarn; incorporating the coated retro-reflective yarn into the weave or knit of a fabric; and disposing a reflective ink into an outward facing surface of the fabric.

Abstract: The instant disclosure is related to the growth of carbon-based nanostructures and associated systems and products. Certain embodiments are related to carbon-based nanostructure growth using active growth materials comprises at least two components that are capable of forming a eutectic composition with each other. In some embodiments, the growth of carbon-based nanostructures is performed using active growth materials comprising at least two types of cations.

Abstract: A method for selectively depositing an amorphous silicon film on a substrate comprising a metallic nitride surface and a metallic oxide surface is disclosed. The method may include; providing a substrate within a reaction chamber, heating the substrate to a deposition temperature, contacting the substrate with silicon iodide precursor, and selectively depositing the amorphous silicon film on the metallic nitride surface relative to the metallic oxide surface. Semiconductor device structures including an amorphous silicon film deposited by selective deposition methods are also disclosed.

Abstract: Embodiments described herein relate to methods and materials for optical device fabrication. In one embodiment, a method of fabricating an optical device is provided. The method includes depositing a dielectric film on a substrate, depositing a wetting layer on the dielectric film, and depositing a metal containing film on the wetting layer. In another embodiment, an optical device is provided. The device includes a substrate, a dielectric film deposited on and contacting the substrate, a wetting layer deposited on and contacting the dielectric film, and a metal containing film deposited on and contacting the wetting layer.

Abstract: Methods for plasma enhanced chemical vapor deposition (PECVD) of silicon carbonitride films are described. A flowable silicon carbonitride film is formed on a substrate surface by exposing the substrate surface to a precursor and a reactant, the precursor having a structure of general formula (I) or general formula (II) wherein R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, and R12 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; purging the processing chamber of the silicon precursor, and then exposing the substrate to an ammonia plasma.

Abstract: The present invention provides a thin-film forming raw material, which is used in an atomic layer deposition method, including a compound represented by the following general formula (1): where R1 to R4 each independently represent an alkyl group having 1 to 5 carbon atoms, and A1 represents an alkanediyl group having 1 to 5 carbon atoms.

Abstract: The present disclosure relates to a 3D printer (1) for 3D printing of a construct. The 3D printer (1) has a print bed (2). The 3D printer further comprises at least one actuating tool head (3) with an extrusion element (4), wherein the extrusion element and the print bed are movable in relation to each other. The 3D printer also comprises at least one sensor (5) arranged to sense a force applied to the print bed (2) by the extrusion element (4), or vice versa. The 3D printer additionally comprises a control element (7) arranged to detect when the sensed force exceeds a predetermined value and to record a position of the print bed or extrusion element related to the detection that the predetermined value is exceeded. The present disclosure also relates to corresponding methods and computer programs.

Abstract: A method to sublimate a wide variety of coatings onto optical lens includes printing a first coating using a sublimation transfer ink onto a sublimation paper, positioning the sublimation paper onto the optical lens to align the sublimation paper to a first surface of the optical lens, placing the sublimation paper thereon, preheating a chamber of a vacuum oven to a predetermined temperature, placing the optical lens into the chamber of the vacuum oven with the first surface of the optical lens facing upward, closing the vacuum oven and setting a predetermined time for heating, heating and vacuuming the chamber of the vacuum oven during about the predetermined time such that the first coating sublimates onto the first surface of the optical lens from the sublimation paper, removing from the vacuum oven and cooling the optical lens having the first coating on its first surface.

Abstract: A process for manufacturing a friction component made of composite material, includes the densification of a fibrous preform of carbon yarns by a matrix including at least pyrocarbon and at least one ZrOxCy phase, where 1?x?2 and 0?y?1, the matrix being formed by chemical vapor infiltration at least from a first gaseous precursor of pyrocarbon and a second gaseous precursor including zirconium, the second precursor being an alcohol or a C1 to C6 polyalcohol modified by linking the oxygen atom of at least one alcohol function to a group of formula —Zr—R3, the substituents R being identical or different, and R being selected from: —H, C1 to C5 carbon chains and halogen atoms.

Abstract: Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.

Abstract: Methods are provided for forming a particular multi-layer micron-sized particle that is substantially transparent, yet that exhibits selectable coloration based on its physical properties. The disclosed physical properties of the particle are controllably selectable refractive indices to provide an opaque-appearing energy transmissive material when pluralities of the particles are suspended in a substantially transparent matrix material. Multiply-layered (up to 30+ constituent layers) particles result in an overall particle diameter of less than 5 microns. The material suspensions render the particles deliverable as aspirated or aerosol compositions onto substrates to form layers that selectively scatter specific wavelengths of electromagnetic energy while allowing remaining wavelengths of the incident energy to pass.

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal- or semimetal-containing films comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal- or semimetal-containing compound in contact with compound of general formula (II), (III), or (IV), wherein E is Ge or Sn, R is an alkyl group, an alkenyl group, an aryl group, or a silyl group, R? are an alkyl group, an alkenyl group, an aryl group, or a silyl group, X is nothing, hydrogen, a halide, an alkyl group, an alkylene group, an aryl group, an alkoxy group, an aryl oxy group, an amino group, or a amidinate group, or an guanidinate group, L is an alkyl group, an alkenyl group, an aryl group, or a silyl group.

Abstract: There is provided a gas processing apparatus, including: a vacuum vessel; a mounting part installed in the vacuum vessel and configured to mount a substrate; an opposing part configured to face the mounting part and including first gas discharge ports configured to discharge a processing gas to the substrate; a first diffusion space configured to communicate with the first gas discharge ports; second gas discharge ports formed in a ceiling portion and configured to supply the processing gas to a central portion of the first diffusion space; a second diffusion space configured to communicate with the second gas discharge ports; a gas supply path installed at an upstream side of the second diffusion space and configured to supply the processing gas to the second diffusion space; and third gas discharge ports configured to be opened to an outer portion of the ceiling portion in an oblique direction.

Abstract: A method of depositing a metal-containing material is disclosed. The method can include use of cyclic deposition techniques, such as cyclic chemical vapor deposition and atomic layer deposition. The metal-containing material can include intermetallic compounds. A structure including the metal-containing material and a system for forming the material are also disclosed.