Abstract: The present invention can provide a cleaning solution containing 0.2-20 mass % of an amine compound (A), 40-70 mass % of a water-soluble organic solvent (B), and water, wherein the amine compound (A) contains at least one selected from the group consisting of n-butylamine, hexylamine, octylamine, 1,4-butanediamine, dibutylamine, 3-amino-1-propanol, N,N-diethyl-1,3-diaminopropane, and bis(hexamethylene)triamine, and the water-soluble organic solvent (B) has a viscosity of 10 mPa·s or less at 20° C. and a pH of 9.0-14.

Abstract: Described herein is an aqueous composition for removing cryolitic deposits from plants or parts of plants which serve for the conversion treatment of metal surfaces, said composition including a) at least one mineral acid, and b) at least one dicarboxylic acid of the formula HOOC—(CH2)x—COOH, where x is 0 to 3 and no borate-containing compounds have been added to the composition. Also described herein is a corresponding method for removing cryolitic deposits.

Abstract: Caustic-free detergent compositions are provided. Detergent compositions including an aminocarboxylate, water conditioning agent, non-caustic source of alkalinity and water beneficially do not require the use of additional surfactants and/or polymers to provide suitable detergency and prevent scale build-up on treated surfaces and enhance protein removal from the treated surfaces. Beneficially the detergent compositions have a concentrate pH less than about 11.5. The detergent compositions are used with a sanitizer to employ the low alkaline detergent compositions are particularly suitable for use as low temperature ware wash detergents that beneficially reduce scale build-up. Methods of employing the low alkaline detergent compositions are also provided.

Abstract: This disclosure relates to a cleaning composition that contains 1) hydroxylamine, 2) an amino alcohol, 3) hexylene glycol, and 4) water.

Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 4) at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion; and 5) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

Abstract: Fluid synthesis system and corresponding method for synthesis of slurry containing abrasive particles. The system and method are configured to substantially segregate the abrasive particles passing through the filter, used at the filtering step of the process, from the sticky components that clog such filter prior to the filtering step of the synthesis process to achieve a sustaining filtration of the slurry as a result of which the filter remains substantially unclogged for the whole predetermined duration of the filtering process.

Abstract: A treatment liquid for cleaning a semiconductor wafer is a treatment liquid contains (A) a hypochlorite ion and (C) a solvent, in which pH at 25° C. is more than 7 and less than 12.0. A method for removing ruthenium and tungsten from a semiconductor wafer and cleaning the semiconductor wafer includes bringing the treatment liquid into contact with the semiconductor wafer containing ruthenium or tungsten is provided.

Abstract: A cleaning composition for post-etch or post ash residue removal from a substrate used in semiconductor industry and a corresponding use of said cleaning composition is described. Further described is a process for the manufacture of a semiconductor device from a semiconductor substrate, comprising the step of post-etch or post ash residue removal from a substrate by contacting the substrate with a cleaning composition according to the invention.

Abstract: The present invention provides a means by which it is possible to sufficiently suppress an organic residue while favorably decreasing a ceria residue on a polished object to be polished obtained after being polished using a polishing composition containing ceria. The present invention relates to a composition for surface treatment, which is for a surface treatment of a polished object to be polished obtained after being polished using a polishing composition containing ceria, contains a carboxy group-containing (co)polymer having a structural unit derived from a monomer having a carboxy group or a salt group of the carboxy group, a SOx or NOy partial structure-containing compound having a partial structure represented by SOx or NOy (where x and y each independently denote a real number 1 to 5), and a dispersing medium, and has a pH of 1 or more and 8 or less.

Abstract: The present invention relates to a composition consisting essentially of a sulfonic acid component selected from the group consisting of camphor sulfonic acid, and a benzene sulfonic acid of structure (I), wherein R is H or a C-1 to C-18 n-alkyl, oxalic acid, a solvent component which consists essentially of an organic solvent component, or a mixture of an organic solvent components and water, wherein the organic solvent component consist of about 100 wt % to about 85 wt % of said solvent component, and further wherein said organic solvent component is either selected from solvent (III), (IV), (V), (VI) (wherein R is selected from the group consisting of —(-0-CH2—CH2—)n, —OH, —OH, and -0-C(?O)—CH3, wherein n? is equal to 1, 2, 3, or 4), (VII) (wherein Ra is H or a C-1 to C-4 alkyl moiety), (VIII), (IX) (wherein Rb is a C-1 to C-18 alkyl moiety), (X), and (XI) or is a mixture, of at least two organic solvents selected from this group.

Abstract: The present invention relates to a composition consisting essentially of an alkylbenzenesulfonic acid having structure (I) (wherein n is an integer from 0 to 16); a solvent which is either selected from the group consisting of solvents having structures (II), (wherein R is selected from the group consisting of —(—O—CH2—CH2—)n—OH, —OH, —O—C(?O)—CH3, wherein n? is equal to 1, 2, 3, or 4), a solvent having structure (III), a solvent having structure (IV), and a solvent having structure (V), or a solvent mixture, of at least two solvents selected from this group. In another embodiment, the composition also consists of, additionally, a surfactant component. This invention also relates to using either of these compositions to remove a patterned photoresist from a substrate.

Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 4) at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion; and 5) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

Abstract: An aqueous composition may include: (A) a fluoride ion supply source in an amount that gives a fluoride ion concentration of 0.05 to 30 mmol/L in the composition; (B) a cation supply source in an amount that gives a mole ratio of cations of 0.3 to 20 to the fluoride ions in the composition; and (C) 0.0001 to 10 mass % of one or more compounds selected from a C4-13 alkylphosphonic acid, a C4-13 alkylphosphonate ester, a C4-13 alkyl phosphate and a salt thereof, with respect to the total amount of the composition, wherein pH is in a range of from 2 to 6.

Abstract: This invention relates to a photoresist stripper composition. The photoresist stripper composition according to the present invention comprises at least one choline compound; at least one polar aprotic solvent; and water; the weight percentage of the choline compound is from 2.5 to 50%, preferably from 5 to 50%, more preferably from 7 to 30%, and most preferably from 9 to 18% by weight based on the total weight of the composition. The photoresist stripper composition according to the present invention exhibits excellent photoresist cleaning performance and low etching to the substrate.

Abstract: A stripping composition and method for removing a coating, such as a water-based or oil-based paint or stain, from a surface without requiring the use of methylene chloride. The stripping composition preferably comprises at least one ether, at least one ester, at least one amine, at least one alcohol, and at least one glycoside and does not contain any methylene chloride. Preferred ingredients comprise 1,3 dioxolane, acetic acid methyl ester or a carbonate ester or both, MEA (2-aminoethanol), benzene methanol, an alkyl polyglucoside, and methylcellulose. The stripping composition is applied to a coating for a period of time between 5-10 minutes for most water and oil-based coatings and 20-90 minutes for most epoxy coatings to effectively remove at least 80% and preferably at least 90% of the coating.

Abstract: Alkaline sprayable aqueous compositions are disclosed. In particular, sprayable alkaline aqueous chlorine compositions including a surfactant system for modifying the viscosity of the composition, are combined with an alkalinity source and a chlorine source. Methods of cleaning having reduced amounts of airborne particulates of the composition during spray applications are also provided according to the invention, namely reduction of airborne particulates having a micron size of 10 or less within a breathing zone of a user of less than or equal to 60 particles/cm3.

Abstract: Disclosed is a mixture comprising the compound trans-1,1,1,4,4,4-hexafluoro-2-butene and at least one additional compound selected from the group consisting of HFOs, HFCs, HFEs, CFCs, CO2, olefins, organic acids, alcohols, hydrocarbons, ethers, aldehydes, ketones, and others such as methyl formate, formic acid, trans-1,2 dichloroethylene, carbon dioxide, cis-HFO-1234ze+HFO-1225yez; mixtures of these plus water; mixtures of these plus CO2; mixtures of these trans 1,2-dichloroethylene (DCE); mixtures of these plus methyl formate; mixtures with cis-HFO-1234ze+CO2; mixtures with cis-HFO-1234ze+HFO-1225yez+CO2; and mixtures with cis-HFO-1234ze+HFC-245fa. Also disclosed are methods of using and products of using the above compositions as blowing agents, solvents, heat transfer compositions, aerosol propellant compositions, fire extinguishing and suppressant compositions.

Abstract: Conventional ozone water is still insufficient in the removal rate and cleaning ability of resist required in today's semiconductor manufacturing field, and it does not fully meet the expectation of further improvement in the effects of sterilization, deodorization, and cleaning in the fields such as cleaning of foodstuffs, cleaning of process equipment and tools, and cleaning of fingers, as well as in the fields such as deodorization, sterilization, and preservation of freshness of foodstuffs. The above problem can be solved by defining the values of a plurality of specific production parameters in the production of ozone water into specific ranges.

Abstract: This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 4) at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion; and 5) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

Abstract: Disclosed are antimicrobial sacrificial floor coatings systems including an antimicrobial sacrificial floor coating composition capable of reducing and/or preventing gram positive and gram negative bacterial growth on floors. Also disclosed is an antimicrobial sacrificial floor coating remover being readily capable of removing the antimicrobial sacrificial floor coating as desired from previously treated flooring surfaces. In certain aspects, the antimicrobial sacrificial floor coatings can include a cationic acrylic polymer; a nonionic wax; and a cationic alkyl biguanide or salt thereof. The antimicrobial sacrificial floor coating may further include a cationic wax that further stabilizes the system during storage, application, and/or post-application to a floor surface.