Abstract: Porous poly(aryl ether ketone) (PAEK) articles are prepared from PAEK/polyimide blends by selective chemical decomposition and subsequent removal of the polyimide phase. Porous PAEK articles exhibit highly interconnected pore structure and a narrow pore size distribution. The porous PAEK articles of the present invention can be utilized as a porous media for a broad range of applications, including membranes for fluid separations, such as microfiltration, ultrafiltration, nanofiltration, and as a sorption media.

Abstract: Method for etching a substrate wherein, after placing in an etching chamber, said substrate is treated with a mixture of HF and acetic acid. Acetic acid is introduced into the chamber first, followed by the hydrogen fluoride. Hydrogen fluoride is introduced via an intermediate stage during which the hydrogen fluoride is stored in an auxiliary chamber. By this means back-flow of a corrosive mixture consisting of hydrogen fluoride and acetic acid into the piping assembly for hydrogen fluoride is prevented and, thus, the life of the piping assembly concerned is appreciably prolonged and metal contamination on substrate treated later is prevented.

Abstract: A deposition apparatus for organic light emitting devices. The deposition apparatus includes a substrate conveying system and at least a chamber. In this case, the substrate conveying system is a circular turntable shape. The chambers are provided around the substrate conveying system in a specific order. While the substrate conveying system rotates in a circular direction, at least a substrate is transferred into the chambers for deposition. The substrate carrier, a shadow mask and a shadow mask alignment system, are positioned on the substrate carrier. After the deposition, at least a layer is deposited on each of the substrates, so as to manufacture at least an organic light-emitting device.

Abstract: A system, apparatus and method is disclosed for providing a consistent liquid mixture according to a predetermined recipe for use at a point of use. The apparatus includes a plurality of liquid component reservoirs in which a constant gas pressure is maintained. A plurality of valves are provided, with individual valves connected to an outlet port of each reservoir. An electronic controller controls the valve actuation in a repetitive sequence to discharge predetermined doses of selected liquid components for mixing to form the consistent liquid mixture. A mixing section receives the sequence of doses to mix them together to form the liquid mixture.

Abstract: A supporting structure for attaching a ceramic susceptor into a processing chamber is provided. The ceramic susceptor is used for placing and heating an article to be processed. The supporting structure has one or more supporting projections integrally provided on a back face of the ceramic susceptor and one or more supporting members mounted to the processing chamber and separated from the supporting projections. At least a part of the supporting member is made from a heat-insulating material and the supporting projection is attached to the supporting member by mechanical means.

Abstract: A substrate processing apparatus includes a chamber, a gas introducing portion, a gas discharge port, a substrate transfer gate, and a substrate moving member which moves the substrate between a substrate processing position where the substrate is processed in the chamber and a substrate transferring in-out position in the chamber where the substrate transferred into the chamber from the substrate transfer gate is located and where the substrate is located when the substrate is transferred out from the chamber through the substrate transfer gate. The gas introducing portion, the substrate processing position, the gas discharge port and the substrate transfer gate are disposed in this order. A gas restraining member which restrains processing gas for processing the substrate from flowing toward the substrate transfer gate is provided between the gas discharge port and the substrate transfer gate.

Abstract: A thin film is fabricated while causing ions in a plasma P to be incident by effecting biasing relative to the space potential of the plasma P by imparting a set potential to the surface of a substrate 9. A bias system 6 causes the substrate surface potential Vs to vary in pulse form by imposing an electrode imposed voltage Ve in pulse form on a bias electrode 23 which is in a dielectric block 22. The pulse frequency is lower than the oscillation frequency of ions in the plasma P, and the pulse period T, pulse width t and pulse height h are controlled by a control section 62 in a manner such that the incidence of ions is optimized. The imposed pulses are controlled in a manner such that the substrate surface potential Vs recovers to a floating potential Vf at the end of a pulse period T, and that the ion incidence energy temporarily crosses a thin film sputtering threshold value in a pulse period T.

Abstract: A method for manufacturing a liquid ejecting head, in which liquid flow paths are defined by combining an element substrate with a nozzle member, comprises a step for preparing a material common to the element substrate as a base material of the nozzle member, a step for forming etching mask layers on first and second surfaces of the base material of the nozzle member, a step for forming a recessed portion in the second surface of the base material by patterning the mask layer on the second surface and effecting etching via the mask layer of the second surface, and a step for forming the nozzle grooves in the base material and communicating the recessed portion with the nozzle grooves by patterning the mask layer on the first surface of the base material and effecting etching via the mask layers of the first and second surfaces.

Abstract: A method of removing photoresist from semiconductor wafers through the use of a sparger plate. According to the inventive method, at least one semiconductor wafer is positioned in a process tank above the sparger plate. A mixture of ozone and deionized water is introduced into the process tank at a position below the sparger plate. The mixture of ozone and deionized water is then introduced across the wafer via the sparger plate at an increased flow velocity while the wafer is submerged in the mixture of deionized water and ozone.

Abstract: An apparatus for applying different amounts of pressure to different locations of a backside of a semiconductor device structure during polishing thereof. The apparatus is configured to be associated with a wafer carrier of a polishing apparatus and includes pressurization structures configured to be biased against the backside of the semiconductor device structure during polishing thereof. The pressurization structures are independently movable with respect to one another. The amount of force or pressure applied by each pressurization structure to the backside of the semiconductor device structure is controlled by at least one corresponding actuator. The actuator may magnetically facilitate movement of the corresponding pressurization structure toward or away from the backside of the semiconductor device structure. The actuator may alternatively comprise a positive or negative pressure source.

Abstract: A method for producing a silicon torsion spring capable, for example, of reading the rotation rate in a microstructured torsion spring/mass system. The system that is produced achieves a low torsional stiffness compared to a relatively high transverse stiffness in the lateral and vertical directions. The method proceeds from a wafer or wafer composite and, upon suitable mask coverage, a spring with a V-shaped cross section is formed by anisotropic wet-chemical etching which preferably extends over the entire wafer thickness and is laterally delimited only by [111] planes. Two of the wafers or wafer composites prepared in this way are rotated through 180° and joined to one another oriented mirrorsymmetrically with respect to one another, so that overall the desired X-shaped cross section is formed.

Abstract: The present invention provides a rotating shaft that can extend between two regions having different ambient pressures. The rotating shaft can include a rotatable hollow outer shell that is coupled to a proximal portion of an inner shaft with a limited number of contact points. A plurality of thermal breaks disposed between the inner shaft and the hollow outer shell impede heat transfer between these two components. A rotary seal coupled to the distal portion of the inner shaft preserves the pressure differential between the two regions. Further, a heat sink removes heat transferred to the seal to ensure that the temperature of the seal remains within a range suitable for its operation. The rotating shaft of the invention can be utilized, for example, in an ion implantation system by the coupling of the outer shell to a wafer holder to position and orient a wafer in a path of an ion beam.

Abstract: By indirectly monitoring a warping amount of a substrate, it is possible to examine causes easily when substrate processing such as deposition is performed with nonuniform in-plane temperature of the substrate and a defect in a substrate characteristic, for example in uniformity of a film thickness, is caused. In a substrate processing apparatus for processing a substrate, a substrate holding body for holding the substrate on its surface and a resistance heater for heating the substrate through the substrate holding body are provided. Radiation thermometers for measuring temperature of the substrate holding body, which has a correlation with a warping amount of the substrate, from its rear surface side are provided to the resistance heater. The substrate holding body is provided to be rotatable with respect to the radiation thermometers so that temperature information of the substrate holding body in a circumferential direction can be obtained.

Abstract: The invention relates to a method of creating pores in a polymer material in sheet form or a polymer layer such as a thin film with a thickness equal to around 100 nanometers, previously deposited on a metallic base. The invention further relates to a method of creating pores in a polymer material in sheet form, such as polycarbonate or any other equivalent material, the said method making it possible to obtain porous areas with controllable sizes and shapes, these areas being distributed according to densities and locations which can also be controlled.

Abstract: A vacuum-processing apparatus comprising a vacuum vessel, a processing chamber arranged in the vacuum vessel and a heater for heating a circumferential wall of the processing chamber, wherein a substrate is arranged in the processing chamber and the substrate is vacuum-processed in the processing chamber, characterized in that the vacuum-processing apparatus has a cooling plate located outside the processing chamber and arranged at a position to oppose the circumferential wall of the processing chamber for cooling the circumferential wall of the processing chamber, and a mechanism for moving the cooling plate so as to change a distance between the cooling plate and the circumferential wall of the processing chamber. A vacuum-processing method for performing a surface treatment for a substrate using the vacuum-processing apparatus.

Abstract: A cold wall chemical vapor deposition apparatus includes: a chamber; a susceptor movable up and down in the chamber by a driving means, the susceptor including a heater and an internal electrode; a heat reflector over the susceptor, the heat reflector reflecting a heat emitted from the heater back to a wafer on the susceptor and serving as an correspondent electrode to the internal electrode; a heater control unit connected to the wafer, the heater and the driving means, the heater control unit sensing a temperature of the wafer, the susceptor moving according to the temperature; a gas supply unit supplying gases to the chamber; and a power source applying a voltage to the chamber.

Abstract: An ink supply port is opened in an Si substrate on which an ink discharge energy generating element is formed, by anisotropic etching, from a back surface opposite to a surface on which the ink discharge energy generating element is formed. When the anisotropic etching is effected, OSF (oxidation induced laminate defect) remains on the back surface of the Si substrate with OSF density equal to or greater than 2×104 parts/cm2 and a length of OSF equal to or greater than 2 ?m.

Abstract: In a plasma CVD apparatus, a plate formed with a plurality of perforated holes is arranged to separate a plasma generation region and a processing region. The aperture ratio of the perforated holes to the plate is not greater than five percent. Plasma including radicals and excited species is generated from an oxygen (O2) gas in the plasma generation region, then the radicals and excited species flow into the processing region through the perforated holes. A monosilane (SiH4) gas is also supplied into the processing region, but the backward flow of the monosilane gas into the plasma generation region is suppressed by the plate. In the processing region, the radicals and the excited species and the monosilane gas result in a gas phase reaction that yields the silicon dioxide film formed on the substrate or the wafer with high quality.

Abstract: The invention provides an improved method for grit blasting slots in a silicon wafer. The method includes, providing a silicon wafer having a first surface and a second surface, the first surface containing resistive, conductive and insulative layers defining individual semiconductor components, applying a first substantially permanent non-water soluble layer selected from silane, photoresist materials and a combination of a silane layer and a photoresist layer to the first surface of the wafer to provide a first substantially permanent layer thereon, applying a water-soluble protective material to the first layer to provide a second layer, grit blasting slots in the wafer corresponding to the individual semiconductor components, and subsequently, removing the water-soluble protective layer from the wafer. The protective layer provides enhanced protection for the electrical components on a silicon wafer during a grit blasting process so that a higher yield of useable semiconductor chips may be made.

Abstract: A plasma etching apparatus includes an upper electrode and a lower electrode (susceptor) on which a semiconductor wafer is disposed, the upper and lower electrodes being arranged within a process chamber, a first high frequency power source for applying a first high frequency power to the upper electrode, a second high frequency power source for applying a second high frequency power having a frequency lower than the frequency of the first high frequency power to the lower electrode. A third high frequency power source for superposing a third high frequency power having a frequency lower than that of the first high frequency power and higher than that of the second high frequency power on the first high frequency power. A phase controller for adjusting the phase difference between the second high frequency power and the third high frequency power.