Abstract: The invention discloses a method for producing silicon carbide from waste circuit board cracking residue, belongs to the field of comprehensive utilization of waste circuit board cracking products, and particularly relates to a method for high-valued utilization of non-metal components in waste circuit board cracking residue. The method mainly comprises the following steps: rolling and crushing, vibration sorting, ultrafine pulverization and electro-separation, quantitative batching, microwave sintering and discharging and grading. Compared with the prior art, rolling crushing is adopted to replace traditional shearing crushing, microwave sintering is adopted to replace a traditional Acheson smelting furnace, the effects of being easy to operate, saving energy and reducing consumption are achieved, the production efficiency is greatly improved, and the production cost is reduced.

Abstract: The invention relates to a method for the production of activated carbon, in particular particulate activated carbon, having an increased mesopore and/or macropore volume fraction, preferably having an increased mesopore volume fraction.

Abstract: The invention includes apparatus and methods for instantiating rare earth metals in a nanoporous carbon powder.

Abstract: The invention relates to a process for producing metal carbonyls, wherein a reaction with a reaction mixture containing the following components is conducted in a reactor: (a) at least one metal carboxylate of formula (MeRx)w, wherein Me is a transition metal, R is a monocarboxylate having 6 to 12 carbon atoms, x=1, 2, 3, or 4, and w=1, 2, or 3, (b) carbon monoxide, (c) an aliphatic alcohol having 4 to 7 carbon atoms—preferably, butanol—and (d) a solvent, wherein the average dwell time in the reactor is less than 60 minutes.

Abstract: A SiC single crystal composite includes: a central portion positioned at a center in plan view; and an outer circumferential portion surrounding an outer circumference of the central portion, in which crystal planes of the central portion and the outer circumferential portion are inclined to each other or different from each other, a boundary is present between the central portion and the outer circumferential portion, and a direction of a crystal constituting the central portion and a direction of a crystal constituting the outer circumferential portion are different from each other via the boundary.

Abstract: Silicon-carbon composite materials and related processes are disclosed that overcome the challenges for providing amorphous nano-sized silicon entrained within porous carbon. Compared to other, inferior materials and processes described in the prior art, the materials and processes disclosed herein find superior utility in various applications, including energy storage devices such as lithium ion batteries.

Abstract: One variation of a method includes: ingesting an air sample captured during an air capture period at a target location for collection of a first mixture including carbon dioxide and a first concentration of impurities; conveying the first mixture through a liquefaction unit to generate a second mixture including carbon dioxide and a second concentration of impurities less than the first concentration of impurities; in a methanation reactor, mixing the second mixture with hydrogen to generate a first hydrocarbon mixture comprising a third concentration of impurities comprising nitrogen, carbon dioxide, and hydrogen; conveying the first hydrocarbon mixture through a separation unit configured to remove impurities from the first hydrocarbon mixture to generate a second hydrocarbon a fourth concentration of impurities less than the third concentration of impurities; and depositing the second hydrocarbon mixture in a diamond reactor containing a set of diamond seeds to generate a first set of diamonds.

Abstract: A hexagonal boron nitride powder having an average longer diameter (L) of primary particles in the hexagonal boron nitride powder of more than 10.0 ?m and 30.0 ?m or less, an average thickness (D) of the primary particles in the hexagonal boron nitride powder of 1.0 ?m or more, a ratio of the average longer diameter (L) to the average thickness (D), [L/D], of 3.0 or more and 5.0 or less, and a content of primary particles having a ratio of a longer diameter (1) to a thickness (d), [l/d], of 3.0 or more and 5.0 or less of 25% or more, a method for producing the hexagonal boron nitride powder, and a resin composition and a resin sheet each containing the hexagonal boron nitride powder.

Abstract: A diamond crystal substrate has a substrate surface that is one crystal plane among (100), (111), and (110) and that has atomic steps and terraces structure at an off-angle of 7° or less excluding 0°.

Abstract: A porous carbon material, wherein a half width (2?) of a diffraction peak (10×) (38° to 49°) by X-ray diffraction is 4.2° or less, and wherein a ratio (mesopore volume/micropore volume) of a mesopore volume (cm3/g) measured by a BJH method to a micropore volume (cm3/g) measured by a HK method is 1.20 or more.

Abstract: Carbon-based materials, and associated methods and articles, are generally provided. In some embodiments, a carbon-based material comprises a carbon-based portion and a functional group bonded to the carbon-based portion. The functional group may be capable of forming a reversible covalent bond with a species. Carbon may make up greater than or equal to 30 wt % of the carbon-based portion. The carbon-based portion may comprise graphene, and a ratio of a total number of functional groups in a plurality of functional groups bonded to the graphene to a total number of carbon atoms in the plurality of carbon atoms of the graphene may be greater than or equal to 1:50. The carbon-based portion may comprise graphene, and greater than or equal to 70% of the graphene sheets may be spaced apart from their nearest neighbors by a distance of greater than or equal to 10 ?. A method may comprise applying a voltage to a carbon-based material.

Abstract: Silicon-carbon composite materials and related processes are disclosed that overcome the challenges for providing amorphous nano-sized silicon entrained within porous carbon. Compared to other, inferior materials and processes described in the prior art, the materials and processes disclosed herein find superior utility in various applications, including energy storage devices such as lithium ion batteries.

Abstract: Silicon-carbon composite materials and related processes are disclosed that overcome the challenges for providing amorphous nano-sized silicon entrained within porous carbon. Compared to other, inferior materials and processes described in the prior art, the materials and processes disclosed herein find superior utility in various applications, including energy storage devices such as lithium ion batteries.

Abstract: A method of fabricating a plurality of single crystal CVD diamonds. The method includes mounting a plurality of single crystal diamond substrates on a first carrier substrate. The plurality of single crystal diamond substrates is subjected to a first CVD diamond growth process to form a plurality of single crystal CVD diamonds on the plurality of single crystal diamond substrates. The plurality of single crystal CVD diamonds are mounted in a recessed carrier substrate and subjected to a second CVD diamond growth process.

Abstract: The disclosure relates to embodiments of an explosive formulation comprising a detonable mixture of an oxidizing agent such as carbon dioxide, and a material that decomposes the oxidizing agent exothermically (a reducing agent), and additives that increase the mixture's shock sensitivity. The formulations may be used in a method to produce diamonds or nano oxides or in other applications that use traditional explosives such as, but not limited to: ammonium nitrate and fuel oil combinations (ANFO), watergel explosives, emulsion explosives and RDX.

Abstract: A SiC ingot includes: a main body including a first cross-sectional plane of the main body and a second cross-sectional plane of the main body facing the first cross-sectional plane; and a protrusion disposed on the second cross-sectional plane and including a convex surface from the second cross-sectional plane of the main body, wherein a first end point disposed at one end of the second cross sectional plane, a second end point disposed at another end of the second cross sectional plane, and a peak point disposed on the convex surface are disposed on a third cross-sectional plane of the main body perpendicular to the first cross-sectional plane, and wherein a radius of curvature of an arc corresponding to a line of intersection between the third cross-sectional plane and the convex surface satisfies Equation 1 below: 3D?r?37D??[Equation 1] where r is the radius of curvature of the arc corresponding to the line of intersection between the third cross-sectional plane and the convex surface, and D is a lengt

Abstract: A chemical synthesis method to fabricate boron carbide to obtain boron carbide fine powders includes the steps of: (A) formulating a precursor solution including a boron source, a liquid organic carbon source and a catalyst; (B) subjecting the precursor solution to a pyrolytic reaction in the presence of electromagnetic radiation to obtain a boron carbide precursor; and (C) subjecting the boron carbide precursor to a thermal energy treatment in the presence of thermal energy to obtain boron carbide fine powders.

Abstract: A method of making carbon nanotubes is provided, the method includes depositing a catalyst layer on a substrate, placing the substrate having the catalyst layer in a reaction furnace, heating the reaction furnace to a predetermined temperature, introducing a carbon source gas and a protective gas into the reaction furnace to grow a first carbon nanotube segment structure comprising a plurality of metallic carbon nanotube segments, and applying a pulsed electric field to grow a second carbon nanotube segment structure from the plurality of metallic carbon nanotube segments, where the pulsed electric field is a periodic electric field including a plurality of positive electric field pulses and a plurality of negative electric field pulses alternately arranged, and the second carbon nanotube segment structure includes a plurality of semiconducting carbon nanotube segments.

Abstract: Provided is polycrystalline diamond having a diamond single phase as basic composition, in which the polycrystalline diamond includes a plurality of crystal grains and contains boron, at least either of nitrogen and silicon, and a remainder including carbon and trace impurities; the boron is dispersed in the crystal grains at an atomic level, and greater than or equal to 90 atomic % of the boron is present in an isolated substitutional type; the nitrogen and the silicon are present in an isolated substitutional type or an interstitial type in the crystal grains; each of the crystal grains has a grain size of less than or equal to 500 nm; and the polycrystalline diamond has a surface covered with a protective film.

Abstract: In a diamond polycrystal, a value of a ratio (d?/d) of d? to d is less than or equal to 0.98 in a Vickers hardness test performed under a condition defined in JIS Z 2244:2009, where the d represents a length of a diagonal line of a first Vickers indentation formed in a surface of the diamond polycrystal when a Vickers indenter with a test load of 4.9 N is pressed onto the surface of the diamond polycrystal, and the d? represents a length of a diagonal line of a second Vickers indentation remaining in the surface of the diamond polycrystal after releasing the test load.