Abstract: A film forming method includes: a first measurement process of measuring a substrate on which a pattern including recesses is formed using infrared spectroscopy; a film formation process of forming a film on the substrate after the first measurement process; a second measurement process of measuring the substrate using infrared spectroscopy after the film formation process; and an extraction process of extracting difference data between measurement data obtained in the first measurement process and measurement data obtained in the second measurement process.

Abstract: Provided is a CZT semiconductor activity meter and an activity measuring device, which relate to the field of medical apparatus and instruments. The CZT semiconductor activity meter includes a shell, a CZT probe, a package substrate and a processing module, wherein the CZT probe is arranged on an end of the shell, the package substrate is arranged at the middle part of the shell and abuts against an inner wall of the shell, the CZT probe is connected to one side of the package substrate, the other side of the package substrate and the inner wall of the shell together form a package inner cavity, and the processing module is accommodated in the package inner cavity and connected to the package substrate. The CZT semiconductor activity meter has a small volume, is convenient to operate, does not require manual control during detection, and can be used at room temperature.

Abstract: An identification apparatus includes a plurality of irradiation units disposed at different positions in a conveyance width direction to irradiate a specimen with a converging ray in different irradiation conditions, the specimen being conveyed in a predetermined conveyance direction by a conveyance unit, a plurality of light-capturing units configured to capture scattered light from the specimen, each of the plurality of light-capturing units corresponding to a different one of the plurality of irradiation units, an acquisition unit configured to acquire identification information for identifying a property of the specimen, based on the light captured by the light-capturing units; and a placement unit configured to place the specimen on a position corresponding to any one of the plurality of irradiation units in accordance with a characteristic value of the specimen at an upstream side of the plurality of irradiation units in the conveyance direction.

Abstract: The present disclosure provides a detection substrate, a manufacturing method thereof and a ray detector. The detection substrate includes: a base substrate; a plurality of independent first electrodes arranged on the base substrate on the same layer; a photoelectric conversion layer arranged on a whole face of sides, facing away from the base substrate, of the plurality of first electrodes; a ray absorption layer arranged on a side, facing away from the plurality of first electrodes, of the photoelectric conversion layer, wherein an orthographic projection of the ray absorption layer on the base substrate is overlapped with an orthographic projection of gaps between the first electrodes on the base substrate; and a second electrode arranged on a whole face of a side, facing away from the plurality of first electrodes, of the photoelectric conversion layer.

Abstract: Methods and apparatus for calibrating radioactive sources are described. An array of scintillation detectors form a receptacle within which a sample or sample container can be retained by a holder. The scintillation detectors are coupled via light transducers such as photomultiplier tubes (PMTs) to independent electronic counters. Coincidence processing of time-tagged events yields a correlated event rate. One or more corrections can be applied as needed, for background counts, deadtime, or random coincidences. Voltage tuning of PMTs yields improved reproducibility. Variations are disclosed. 1% accuracy has been demonstrated over a range of 10 kBq-3 MBq, covering a gap in the capabilities of conventional technology.

Abstract: Provided is a long-wave infrared detecting element including a magnetic field generator configured to generate a magnetic field, a substrate provided on the magnetic field generator, a magnetic-electric converter that is spaced apart from the substrate and configured to generate an electrical signal based on the magnetic field generated by the magnetic field generator, and an support unit that is provided on the substrate and supports the magnetic-electric converter in a state in which the magnetic-electric converter is spaced apart from the substrate, the support unit being configured to generate heat by absorbing incident infrared radiation, wherein the electrical signal changes corresponding to temperature changes of the magnetic-electric converter based on the incident infrared radiation directly absorbed in the magnetic-electric converter and temperature changes of the magnetic-electric converter based on the incident infrared radiation absorbed in the support unit.

Abstract: The invention relates to a method for improving the screening of histological samples, especially samples that may include cancerous or precancerous cells, or cells having other disease states. The method involves analysing a sample obtained from a subject and comprises the steps of providing the spectra produced by scanning the sample using FTIR spectroscopy and identifying or sorting the cells in the sample according to the spectrum each produces.

Abstract: A III-V semiconductor pixel X-ray detector, including an absorption region of a first or a second conductivity type, at least nine semiconductor contact regions of the second conductivity type arranged in a matrix along the upper side of the absorption region, and optionally a semiconductor contact layer of the first conductivity type, a metallic front side connecting contact being arranged beneath the absorption region, and a metallic rear side connecting contact being arranged above each semiconductor contact region, and a semiconductor passivation layer of the first or the second conductivity type. The semiconductor passivation layer and the absorption region being lattice-matched to each other. The semiconductor passivation layer being arranged in regions on the upper side of the absorption region. The semiconductor passivation layer having a minimum distance of at least 2 ?m or at least 20 ?m with respect to each highly doped semiconductor contact region.

Abstract: In a multi-session imaging study, information from a previous imaging session is stored in a Binary Large Object (BLOB). Current emission imaging data are reconstructed into a non-attenuation corrected (NAC) current emission image. A spatial transform is generated aligning a previous NAC emission image from the BLOB to the current NAC emission image. A previous computed tomography (CT) image from the BLOB is warped using the spatial transform, and the current emission imaging data are reconstructed with attenuation correction using the warped CT image. Alternatively, low dose current emission imaging data and a current CT image are acquired, a spatial transform is generated aligning the previous CT image to the current CT image, a previous attenuation corrected (AC) emission image from the BLOB is warped using the spatial transform, and the current emission imaging data are reconstructed using the current CT image with the warped AC emission image as prior.

Abstract: A particle detector according to one embodiment includes: superconductive lines, conductive lines, insulating films, a first detection circuit, and a second detection circuit. The superconductive lines extend in a first direction and are arranged in a second direction intersecting the first direction. The conductive lines extend in a third direction different from the first direction and are arranged in a fourth direction intersecting the third direction. The insulating films are each interposed at an intersection point between one of the superconductive lines and one of the conductive lines. The first detection circuit detects a voltage change occurring in the superconductive lines. The second detection circuit detects a current or a voltage generated in the conductive lines when the voltage change occurs.

Abstract: A method of tailoring the properties of garnet-type scintillators to meet the particular needs of different applications is described. More particularly, codoping scintillators, such as Gd3Ga3Al2O12, Gd3Ga2Al3O12, or other rare earth gallium aluminum garnets, with different ions can modify the scintillation light yield, decay time, rise time, energy resolution, proportionality, and/or sensitivity to light exposure. Also provided are the codoped garnet-type scintillators themselves, radiation detectors and related devices comprising the codoped garnet-type scintillators, and methods of using the radiation detectors to detect gamma rays, X-rays, cosmic rays, and particles having an energy of 1 keV or greater.

Abstract: A radiation detecting device includes a radiation detector and a supporter. The radiation detector includes a substrate that has flexibility and a semiconductor element formed on an imaging surface of the substrate. The supporter is formed of foam and supports the radiation detector.

Abstract: A radiation detection device includes a detection element including a substrate having a first surface and a second surface, a first electrode on the first surface, a second electrode adjacent to the first electrode in a first direction, a third electrode adjacent to the first electrode in a second direction; a fourth electrode adjacent to the third electrode in the first direction and adjacent to the second electrode in the second direction and a fifth electrode on the first surface and between the first and second electrode, between the first and third electrode, between the second and fourth electrode, and between the third and fourth electrode; a wiring layer on the second surface and including a first wiring, a second wiring, a third wiring, and a fourth wiring; and a circuit element opposite to the wiring layer and connected to the first to fourth wiring.

Abstract: Scintillators that can support up to 20 MHz count rates, which is significantly faster than the required 100K counts/second needed for single crystal diffractometers and methods for fabricating them.

Abstract: The invention relates to a scintillation material of rare earth orthosilicate doped with a strong electron-affinitive element and its preparation method and application thereof. The chemical formula of the scintillation material of rare earth orthosilicate doped with the strong electron-affinitive element is: RE2(1?x?y+?/2)Ce2xM(2y??)Si(1??)M?O5. In the formula, RE is rare earth ions and M is strong electron-affinitive doping elements; the value of x is 0<x?0.05, the value of y is 0<y?0.015, and the value of ? is 0???10?4; and M is selected from at least one of tungsten, lead, molybdenum, tellurium, antimony, bismuth, mercury, silver, nickel, indium, thallium, niobium, titanium, tantalum, tin, cadmium, technetium, zirconium, rhenium, and gallium Ga.

Abstract: Various embodiments may provide a method of illuminating a sample plane. The method may include providing an illumination subsystem, the illumination subsystem including an optical source and at least one lens, having an optic axis at an incident angle greater than 0° and less than 90° to a normal of the sample plane. The method may also include rotating the illumination subsystem about a pivot point between the optical source and the sample plane along the optic axis so that an adjusted illumination distribution generated by the illumination subsystem at the sample plane has greater symmetry compared to a reference illumination distribution generated by the illumination subsystem at the sample plane without the rotation about the pivot point.

Abstract: The present disclosure discloses, in one arrangement, a scintillator material made of a metal halide with one or more additional group-13 elements. An example of such a compound is Ce:LaBr3 with thallium (Tl) added, either as a codopant or in a stoichiometric admixture and/or solid solution between LaBr3 and TlBr. In another arrangement, the above single crystalline iodide scintillator material can be made by first synthesizing a compound of the above composition and then forming a single crystal from the synthesized compound by, for example, the Vertical Gradient Freeze method. Applications of the scintillator materials include radiation detectors and their use in medical and security imaging.

Abstract: There may be provided a radiation sensing device that includes a first TMOS with temperature dependent electrical parameters; wherein the first TMOS is exposed to radiation, and a second TMOS transistor that is sheltered from radiation. The radiation sensing device performs a differential measurement, and applied various measures for noise reduction, and maintaining the stability of the radiation sensing device.

Abstract: A temperature calibration method includes providing a temperature measuring device including a movable shutter module, and a first and a second non-contacting temperature sensing module, and a movable shutter structure of the movable shutter module includes a black substance for generating a predetermined heating temperature; moving the movable shutter structure to a first position by driving of the electric control driver, so as to completely block a first temperature-measuring viewing angle of the first non-contacting temperature sensing module and a second temperature-measuring viewing angle of the second non-contacting temperature sensing module by the black substance; measuring the predetermined heating temperature that is generated by the black substance by the second non-contacting temperature sensing module at the second temperature-measuring viewing angle so as to obtain black body temperature information of the black substance; and calibrating the first non-contacting temperature sensing module acco

Abstract: Systems and methods for measuring the concentricity of golf balls using varying energy levels to gather and analyze data on concentricity.