Abstract: A foldable glass substrate includes a top surface, a bottom surface, and a side surface. The side surface includes a first side surface extending at a first angle from the top surface, a second side surface extending at a second angle from the bottom surface, and a third side surface extending from each of the first side surface and the second side surface. A length of the third side surface in a direction substantially perpendicular to at least one of the top surface and the bottom surface is equal to or greater than about 0.3 times and equal to or less than about 0.7 times of a minimum distance between the top surface and the bottom surface. The minimum distance is equal to or greater than about 15 micrometers (?m) and equal to or less than about 100 ?m.

Abstract: A light sensor includes a photoelectric conversion layer and a long-pass filter that is disposed above the photoelectric conversion layer. The photoelectric conversion layer has a spectral sensitivity characteristic having a first peak at a first wavelength that is longer than a cut-on wavelength of the long-pass filter, and a spectral sensitivity of the photoelectric conversion layer at the cut-on wavelength is greater than or equal to 0% and less than or equal to 50% of a spectral sensitivity of the photoelectric conversion layer at the first wavelength.

Abstract: A TFT layer and an organic EL element layer are provided in this order on a resin substrate layer, the TFT layer includes source wiring lines, high-level power source wiring lines, conductive portions including connection wiring lines between TFTs, and a flattening film covering the conductive portions provided on the interlayer insulating film, a frame region is provided with a bending portion including a portion where a slit is formed in an inorganic insulating film including the interlayer insulating film, and a flattening auxiliary film is provided between each adjacent ones of the conductive portions, formed of a material identical to a material of the frame flattening film that fills the slit of the bending portion, in a layer identical to a layer of the frame flattering film, and covered with the flattening film together with the conductive portions.

Abstract: The light-emitting device includes a light-emitting element in which a first electrode, a light-emitting layer, and a second electrode are sequentially layered toward a side of a light-emitting face. Further, the light-emitting device includes, on a side of the light-emitting face of the second electrode, a complementary color light absorption layer configured to absorb complementary color light of light emitted by the light-emitting element.

Abstract: Discussed is a display device including a substrate including a first region and a second region surrounding the first region, a plurality of first subpixels on the first region of the substrate, and a plurality of second subpixels on the second region of the substrate. The first region includes a transmission portion adjacent to the plurality of first subpixels. Each of the first and second subpixels includes a first electrode, a first common layer, an organic emission layer, a second common layer, and a second electrode stacked in order. The first and second common layers are located in succession in the first and second subpixels.

Abstract: A solid-state imaging device includes a substrate on which a plurality of photoelectric conversion units has been formed, a groove portion provided on a side of a light-receiving surface of the substrate, and recessed and projecting portions provided on a side wall surface of the groove portion facing a side of the plurality of photoelectric conversion units.

Abstract: A display panel includes the following elements: a substrate including a first base layer, wherein the first base layer includes a transparent polyimide resin; a first pixel circuit and a second pixel circuit over the substrate, spaced from each other with the transmission area between the first pixel circuit and the second pixel circuit, and each including transistors and a storage capacitor; a first display element electrically connected to the first pixel circuit; and a second display element electrically connected to the second pixel circuit.

Abstract: A display device includes an active matrix substrate including a transistor element and a light-emitting element layer provided on the active matrix substrate and including a first electrode, a second electrode, a function layer including a light-emitting layer between the first electrode and the second electrode, and a sealing layer. The display device includes: a half mirror provided on a display surface side of the light-emitting element layer; and a first ?/4 plate, a reflective polarizer, and an absorbing polarizer which are provided in order from the light-emitting element layer side between the light-emitting element layer and the half mirror.

Abstract: A display device including a display module, an anti-reflection layer, and a bending protection layer. The display module includes a first area, a second area, and a bending area disposed between the first area and the second area and having a predetermined curvature radius. The bending protection layer includes a first portion overlapping at least the first area and a second portion overlapping at least the bending area. The first portion has a maximum thickness in a range from about 40 ?m to about 85 ?m, a maximum inclined angle in a range from about 10° to 30°, and an elastic modulus in a range from about 50 MPa to about 300 MPa.

Abstract: A power device includes a packaged semiconductor switch containing first and second series-connected insulated-gate transistors, first and second control terminals electrically connected to the first and second insulated-gate transistors, respectively, first and second current carrying terminals electrically connected to the first and second insulated-gate transistors, respectively, and a voltage-monitoring terminal electrically connected to an internal node shared by first and second current carrying regions within the first and second insulated-gate transistors, respectively. The first and second control terminals can be electrically connected to a gate of the first insulated-gate transistor and a gate of the second insulated-gate transistor, respectively; and the first and second current carrying terminals can be electrically connected to a source of the first insulated-gate transistor and a drain (or collector) of the second insulated-gate transistor.

Abstract: A display device according to an embodiment of the present disclosure is described. The display device includes a see-through area for camera and a routing area disposed around the see-through area for camera. A camera module is disposed in the see-through area for camera. The routing area is overlapped by at least one data line and scan line. The display device includes a pixel area which includes the see-through area for camera and the routing area. The pixel area includes a plurality of sub-pixels including an organic light emitting element and a cathode.

Abstract: An electronic device including a first substrate, a semiconductor layer, a second substrate and a color filter is disclosed. The first substrate has a peripheral region. The semiconductor layer is disposed on the first substrate in the peripheral region. The second substrate is opposite to the first substrate. The color filter is disposed between the first substrate and the second substrate and in the peripheral region of the first substrate, and the color filter overlaps the semiconductor layer.

Abstract: A problem to be solved is to make plural Ge PDs uniform in sensitivity by heating based on the Ge PDs with heaters photocurrent measurements taken by a current monitor, and thereby curb deterioration in a common-mode rejection ratio. A photodetector according to the present invention is a germanium photodetector (Ge PD) that uses germanium or a germanium compound in a light absorption layer, the photodetector including two or more Ge PDs placed to receive an input differential signal; a current monitor adapted to measure photocurrents of the two or more Ge PDs; resistors adapted to heat the respective Ge PDs; voltage sources connected to the respective resistors and capable of controlling voltage values independently of each other, wherein the voltage sources are connected with the current monitor, and the voltage sources manipulate voltages applied to the heaters such that current values output by the two or more Ge PDs will match each other.

Abstract: A display apparatus includes: a base substrate including a display area and a non-display area adjacent to the display area; a first power supply wire in the non-display area, a first power supply voltage being applied to the first power supply wire; a second power supply wire in the non-display area and spaced apart from the first power supply wire, a second power supply voltage being applied to the second power supply wire; and a dam overlapping the first power supply wire and the second power supply wire, having a first height on the first power supply wire, and having a second height greater than the first height between the first power supply wire and the second power supply wire.

Abstract: A SiC composite substrate includes a SiC single crystal layer and at least one biaxially oriented SiC layer. The at least one biaxially oriented SiC layer is disposed on the SiC single crystal. In the biaxially oriented SiC layer, the SiC is oriented in both a c-axis direction and an a-axis direction. The biaxially oriented SiC layer has pores and has a density of defect reaching the surface of 1.0×101/cm2 or less.

Abstract: A semiconductor device includes a first active pattern disposed on a substrate, a device isolation layer filling a trench that defines the first active pattern, a first channel pattern and a first source/drain pattern disposed on the first active pattern in which the first channel pattern includes semiconductor patterns stacked and spaced apart from each other, a gate electrode that extends and runs across the first channel pattern, a gate dielectric layer disposed between the first channel pattern and the gate electrode, and a first passivation pattern disposed between the device isolation layer and a first sidewall of the first active pattern. The first passivation pattern includes an upper part that protrudes upwardly from the device isolation layer, and a lower part buried in the device isolation layer. The gate dielectric layer covers the upper part of the first passivation pattern.

Abstract: A display panel includes: a substrate including a first area, a second area at least partially surrounding the first area, and an intermediate area between the first area and the second area; an insulating layer on the substrate; a plurality of display elements in the second area, and each including a pixel electrode, an opposite electrode, and an intermediate layer between the pixel electrode and the opposite electrode; a groove in the intermediate area; a thin-film encapsulation layer covering the plurality of display elements, and including an inorganic encapsulation layer and an organic encapsulation layer; and an inorganic layer over the thin-film encapsulation layer, wherein at least one sub-layer included in the intermediate layer is disconnected around the groove, and the inorganic layer directly contacts the insulating layer beyond an edge of the at least one sub-layer located in the intermediate area and an edge of the inorganic encapsulation layer.

Abstract: A display apparatus includes a display area including pixels; a non-display area adjacent to the display area; a first planarization layer located in the display area and the non-display area; a second planarization layer on the first planarization layer; an organic insulating layer on the second planarization layer; a first dam on the first planarization layer, including the second planarization layer and the organic insulating layer, and surrounding the display area; a second dam disposed outside the first dam, including the second planarization layer and the organic insulating layer, and surrounding the first dam; and a monitoring bank disposed between the display area and the first dam and including the second planarization layer and the organic insulating layer. A thickness of the second planarization layer included in the monitoring bank is less than a thickness of the second planarization layer included in the first dam.

Abstract: A display device includes a display area including a light emitting element and an organic insulating layer on the light emitting element; and a non-display area adjacent to the display area in a first direction, the non-display area including a first dam spaced apart from the organic insulating layer in the first direction, and a first groove between the organic insulating layer and the first dam in the first direction.

Abstract: An electronic device is provided. The electronic device includes a substrate having an edge, an active region located on the substrate, a convex portion disposed between the edge and the active region, a first inorganic layer disposed on the substrate and the convex portion, a second inorganic layer disposed on the first inorganic layer, wherein the first inorganic layer directly contacts the second inorganic layer at an end which is located between the convex portion and the edge, and an organic layer disposed between the first inorganic layer and the second inorganic layer, and between the end and the convex portion.