Abstract: A packaged semiconductor device with electrical redundancy for improved mechanical reliability and a method for fabrication are disclosed. The device comprises a semiconductor chip having an integrated circuit, said circuit having a multitude of electrical terminals with metal contact pads; an interposer of electrically insulating material having electrically conductive paths extending through said interposer from one surface to the opposite surface forming electrical entry and exit ports on said insulating interposer; said interposer with its entry and exit ports having regions of different mechanical stress levels; each of said chip contact pads being electrically connected to a respective entry port of said interposer and by means of said conductive paths to at least one respective exit ports; and at least one of said entry ports being electrically connected to a plurality of high-stress exit ports in parallel.

Abstract: A semiconductor device (40, 50, 70) is electrically connected to a circuit board (30) through use of one or more connectors (10, 20, 90). Connector (10) includes locking pins (14) which fit through alignment holes (34) of the circuit board and which are either mechanically deformed to lock the pins in the holes, or which are received by locking holes (24, 94) of a complementary connector (20, 90). An interposer (60, 80) is used as a compliant member to assure that adequate electrical connection is made between the external terminals (42, 72) of the semiconductor device without damaging the device or the circuit board. Connector (10) includes a cavity (12) which is dimensioned to accommodate the semiconductor device while assuring proper alignment between the locking pins, the external terminals, and the circuit board.

Abstract: A first substrate has a plurality of bumps and a second substrate has a plurality of openings at positions in registration with the plurality of bumps when the first and second substrates are placed one on top of the other in a confronting manner. The first and second substrates are put together by fusing a sealing wall formed on the second substrate, to hermetically seal an electronic device lying on the first substrate therein. Gas that may be generated upon fusing of the sealing wall can be effectively removed through the openings in the second substrate.

Abstract: A semiconductor apparatus includes a functional block that performs necessary functions for the proper operation; a functional signal line that is connected to the functional block to transmit a functional signal; and an enable signal line to supply an enable signal to the functional block. The enable signal line includes a part that is formed on an upper layer of the functional signal line.

Abstract: A thermally conductive adhesive tape and method for its use in packaging integrated circuits fabricated on semiconductor material. The thermally conductive adhesive tape includes a thermally conductive base upon which an adhesive layer is laminated or coated onto at least one side of the thermally conductive base. Thermal energy generated by operating the integrated circuit may be transferred from the integrated circuit via the thermally conductive adhesive tape to a medium to which the semiconductor material is attached. As a result, any excessive heat that may negatively affect the performance of the integrated circuit is dissipated through the medium.

Abstract: When a first semiconductor chip is installed on a circuit substrate by using an anisotropic conductive bonding agent, one portion thereof is allowed to protrude outside the first semiconductor chip. A second semiconductor chip is installed on the first semiconductor chip and a support portion formed by the protruding resin. The protruding portion of the second semiconductor chip is supported by the support portion from under. Thus, in a semiconductor device having a plurality of laminated semiconductor chips in an attempt to achieve a high density, even when, from a semiconductor chip stacked on a circuit substrate, one portion of a semiconductor chip stacked thereon protrudes, it is possible to carry out a better wire bonding process on electrodes formed on the protruding portion.

Abstract: An apparatus for reducing interconnect resistance using optimized trench geometry. One embodiment comprises an interconnect line and an interconnect well. The interconnect line, comprised of a conductive material, has a depth and exists in a first circuit layer of a multilayered Integrated Circuit (IC). The interconnect well is coupled to the interconnect line and is insulated from other conductive materials in the first circuit layer, and in the plurality of subsequent adjacent layers. The interconnect well has a depth in said multilayered IC that exceeds said depth of said interconnect line.

Abstract: A method and apparatus are provided for handling planar structures, such as semiconductor wafers, with reduced breakage and cracking. The method includes the step of segmenting a wafer prior to grinding. The apparatus includes a segmented vacuum table for supporting wafer portions in position to be ground to a desired thickness. In another aspect of the invention, adhesive material is employed to individually secure wafer portions in position during the grinding process.

Abstract: Improved structures for and methods for assembling heatspreader attachments in integrated circuit packages permit attachment of a relatively low cost heatspreader having a high coefficient of thermal expansion directly to the back of a die while maximizing thermal performance, mechanical integrity and reliability of the assembly. The improvements are realized through the use of specific adhesive materials to attach the heatspreader to the die, heatspreader geometries, adhesive geometries, assembly techniques and underfill geometries.

Abstract: An integrated circuit and manufacturing method therefor is provided having a semiconductor substrate with a semiconductor device. A dielectric layer is on the semiconductor substrate and has an opening provided therein. An amorphized barrier layer lines the opening and a seed layer is deposited to line the amorphized barrier layer. A conductor core fills the opening over the barrier layer to form a conductor channel. The seed layer is securely bonded to the amorphized barrier layer and prevents electromigration along the surface between the seed and barrier layers.

Abstract: A capacitor assembly having one or more capacitors embedded in the core layer of a package having integrated circuits (ICs) mounted thereon. Each embedded capacitor has plural pairs of first and second electrodes and the package core layer has plural sets of first and second vias dispersed over the pairs of electrodes and being connected thereto. A metal layer is provided on the core layer and includes a first portion having at least one metal strip and a second portion, electrically isolated from each strip. Each metal strip is positioned such that it is extended to overlie both the first electrode of a distinct pair of electrodes and the second electrode of an adjacent, succeeding pair of electrodes and effects a mutual electrical connection between them through first and second vias associated therewith, respectively.

Abstract: A semiconductor device including: a semiconductor substrate, and an interconnect made of a titanium silicide film overlying the semiconductor substrate, the titanium silicide film including at least one atom selected from the group consisting of phosphorus, arsenic and antimony at an average density between 5×1019 and 3×1020 atoms/cm3. Although the titanium silicide film is conventionally recognized to cause depletion of an underlying polysilicon and increase of a connected-polysilicon-plug resistance, these deficiencies can be suppressed by specifying the average density.

Abstract: A vertically mountable semiconductor device including a plurality of stub contacts extending perpendiculary from a bottom edge thereof. A complementary alignment device includes a receptacle for receiving the vertically mountable semiconductor device. The alignment device is attachable to a carrier substrate. Upon attachment of the alignment device to a carrier substrate and insertion of a vertically mountable semiconductor device into the receptacle, a contact element applies a downward force to the vertically mountable semiconductor device to establish and maintain an electrical connection between the vertically mountable semiconductor device and the carrier substrate.

Abstract: A low-pin-count chip package including a die pad for receiving a semiconductor chip and a plurality of connection pads electrically coupled to the semiconductor chip. The semiconductor chip, the die pad, and the connection pads are encapsulated in a package body such that the lower surfaces of the die pad and the connection pads are exposed through the package body. The present invention is characterized in that the die pad and the connection pads have a substantially concave profile thereby prolonging the time for moisture diffusion into the package as well as enhancing the “locking” of the die pad and the connection pads in the package body. The present invention further provides a method of producing the low-pin-count chip package described above.

Abstract: A semiconductor device includes a semiconductor chip having a plurality of electrodes formed on a first major surface thereof, a resin package sealing the semiconductor chip therein, of leads electrically connected to the electrodes of the semiconductor chip and formed so as to extend inside and outside the resin package, and a support lead supporting the semiconductor chip at a part of a second major surface of the semiconductor chip opposite the first major surface. The semiconductor chip is bonded to the support lead with an adhesive tape.

Abstract: Within an interlayer dielectric film laid on a semiconductor substrate, a first conducting line is formed at a position lower than a second conducting line. Further, an etching stopper film, which has an etch selectivity differing from that of the interlayer dielectric films under a certain set of etching conditions, is formed at an intermediate position between the first conducting line and the second conducting line. A contact hole to reach the upper second conducting line is formed by etching under the condition that the interlayer dielectric film has a high etch selectivity with respect to the etching stopper film. The depth of a contact hole is controlled not to reach the lower first conducting line in the event the contact hole is offset from a upper conducting line.

Abstract: An alpha-phase tantalum having a resistivity of about 15 micro-ohm-cm or less is provided and is especially useful as a barrier layer for copper and copper alloy interconnections.

Abstract: The Mo or MoW composition layer has the low resistivity less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy etchant or a Cr etchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor device along with an Al layer and a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using a polymer layer, an etch gas system CF4+O2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas SF6+HCl(+He) or SF6+Cl2(+He) can form the edge profile of contact holes to be smoothed.

Abstract: A semiconductor device has a stress reducing laminate. Grooves are formed on the surface of a material layer selected from a multilayer structure of the semiconductor device, for example, a conductive layer. The cross sections of the grooves are semicircular or semi-elliptic. The stress applied to the conductive layer having the grooves is divided into a vertical component and a horizontal component with respect to the surface of the conductive layer. Accordingly, the stress applied vertically to the conductive layer is reduced, making it is possible to prevent the conductive layer from cracking due to stress and to reduce the stress transmitted to material layers under the conductive layer.

Abstract: A flip-chip device and process for fabricating the device employs a multilayer encapsulant that includes a first portion encapsulant having a coefficient of thermal expansion of at most 30 ppm/° C. and an elastic modulus of 2-20 GPa and a second portion comprising a polymer flux having a coefficient of thermal expansion that may exceed 30 ppm/° C.