Patents Examined by Jiong-Ping Lu
  • Patent number: 11232955
    Abstract: Processing methods to etch metal oxide films with less etch residue are described. The methods comprise etching a metal oxide film with a metal halide etchant, and exposing the etch residue to a reductant to remove the etch residue. Some embodiments relate to etching tungsten oxide films. Some embodiments utilize tungsten halides to etch metal oxide films. Some embodiments utilize hydrogen gas as a reductant to remove etch residues.
    Type: Grant
    Filed: March 26, 2020
    Date of Patent: January 25, 2022
    Inventors: Amrita B. Mullick, Abhijit Basu Mallick, Srinivas Gandikota, Susmit Singha Roy, Yingli Rao, Regina Freed, Uday Mitra
  • Patent number: 11225721
    Abstract: A thin film etchant composition for preventing re-adsorption of an etched metal and uniformly etching a thin film is provided. The thin film etchant composition includes about 43 wt % to about 46 wt % of phosphoric acid, about 5 wt % to about 8 wt % of nitric acid, about 10 wt % to about 17 wt % of acetic acid, about 1 wt % to about 3 wt % of iron nitrate, about 0.7 wt % to about 1.5 wt % of phosphate, and deionized water as a remaining amount based on a total weight of the thin film etchant composition.
    Type: Grant
    Filed: February 25, 2019
    Date of Patent: January 18, 2022
    Inventors: Jinhyung Kim, Joohwan Chung, Jinsook Kim, Haccheol Kim, Byungsu Lee, Changsoo Kim, Jungseek Jung, Dongki Kim, Sangtae Kim, Giyong Nam, Youngchul Park, Kyungbo Shim, Daesung Lim, Sanghoon Jang
  • Patent number: 11227774
    Abstract: Methods and systems for etching SiCN with mutli-color selectivity may include receiving the substrate having a multi-line layer formed thereon, the multi-line layer including a region having a pattern of alternating lines of a plurality of materials, wherein each line has a horizontal thickness, a vertical height, and extends horizontally across an underlying layer, wherein each line of the pattern of alternating lines extends vertically from a top surface of the multi-line layer to a bottom surface of the multi-line layer. Such a method may also include forming a patterned recess in the multi-line layer to expose at least a first component of the multi-line layer and a second component of the multi-line layer. An embodiment of a method many also include etching the first component with a non-corrosive etch process that is selective to the second component.
    Type: Grant
    Filed: November 25, 2020
    Date of Patent: January 18, 2022
    Assignee: Tokyo Electron Limited
    Inventors: Shihsheng Chang, Andrew Metz
  • Patent number: 11214712
    Abstract: A composition is provided that comprises a calcium carbonate slurry. The calcium carbonate slurry comprises a plurality of calcium carbonate particles suspended in a solution, where the solution comprises a dispersant and an anionic surfactant. The concentration of the calcium carbonate particles in the calcium carbonate slurry is equal to or less than about 2.0 wt. %.
    Type: Grant
    Filed: February 21, 2018
    Date of Patent: January 4, 2022
    Assignee: Illumina, Inc.
    Inventors: Robert Yang, Samantha K. Brittelle, You-Jung Cheng, Scott William Bailey, James M. Tsay
  • Patent number: 11211247
    Abstract: Water soluble organic-inorganic hybrid masks and mask formulations, and methods of dicing semiconductor wafers are described. In an example, a mask for a wafer singulation process includes a water-soluble matrix based on a solid component and water. A p-block metal compound, an s-block metal compound, or a transition metal compound is dissolved throughout the water-soluble matrix.
    Type: Grant
    Filed: January 30, 2020
    Date of Patent: December 28, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Wenguang Li, James S. Papanu
  • Patent number: 11201062
    Abstract: A method for processing a substrate includes a step of providing a substrate and a first step. In the step of providing a substrate, a substrate having a first film and a second film formed on the first film and having a pattern formed thereon is provided. In the first step, a protective film is formed on a side wall of the first film by a product generated by sputtering of the second film while a first processing gas is turned into plasma and the first film is etched simultaneously with the sputtering of the second film.
    Type: Grant
    Filed: June 24, 2020
    Date of Patent: December 14, 2021
    Inventors: Yuki Iijima, Toru Hisamatsu, Kae Kumagai
  • Patent number: 11198815
    Abstract: An etching composition may include a peracetic acid mixture, a fluorine compound, an organic solvent (e.g., acetate-series organic solvent), and water. The etching composition may be used to selectively etch silicon-germanium (SiGe).
    Type: Grant
    Filed: August 3, 2020
    Date of Patent: December 14, 2021
    Assignees: Samsung Electronics Co., Ltd., Soulbrain Co., Ltd.
    Inventors: Soo Jin Kim, Hyo Sun Lee, Jin Hye Bae, Jung Hun Lim, Yong Jae Choi
  • Patent number: 11195712
    Abstract: A process is provided for depositing a substantially amorphous titanium oxynitride thin film that can be used, for example, in integrated circuit fabrication, such as in forming spacers in a pitch multiplication process. The process comprises contacting the substrate with a titanium reactant and removing excess titanium reactant and reaction byproducts, if any. The substrate is then contacted with a second reactant which comprises reactive species generated by plasma, wherein one of the reactive species comprises nitrogen. The second reactant and reaction byproducts, if any, are removed. The contacting and removing steps are repeated until a titanium oxynitride thin film of desired thickness has been formed.
    Type: Grant
    Filed: January 14, 2020
    Date of Patent: December 7, 2021
    Assignee: ASM IP HOLDING B.V.
    Inventors: Viljami J. Pore, Seiji Okura, Hidemi Suemori
  • Patent number: 11186748
    Abstract: The present invention provides aqueous chemical mechanical planarization polishing (CMP polishing) compositions comprising one or more dispersions of a plurality of elongated, bent or nodular anionic functional colloidal silica particles or their mixture with one or more dispersions of anionic functional spherical colloidal silica particles, one or more amine carboxylic acids having an isoelectric point (pI) below 5, preferably, an acidic amino acid or pyridine acid, and, preferably, one or more ethoxylated anionic surfactants having a C6 to C16 alkyl, aryl or alkylaryl hydrophobic group, wherein the compositions have a pH of from 3 to 5. The compositions enable good silicon nitride removal and selectivity of nitride to oxide removal in polishing.
    Type: Grant
    Filed: September 28, 2017
    Date of Patent: November 30, 2021
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventor: Naresh Kumar Penta
  • Patent number: 11186772
    Abstract: An etching composition includes phosphoric acid, a silane compound comprising at least one silicon (Si) atom, and an ammonium salt represented by Formula 1 below: wherein: L1 to L3 are independently substituted or unsubstituted hydrocarbylene, R1 to R4 are independently hydrogen, a substituted or unsubstituted hydrocarbyl group, and Xn? is an n-valent anion, where n is an integer of 1 to 3.
    Type: Grant
    Filed: September 2, 2020
    Date of Patent: November 30, 2021
    Assignees: SK Innovation Co., Ltd., SK-Materials Co., Ltd.
    Inventors: Cheol Woo Kim, Kwang Kuk Lee, Jae Hoon Kwak, Young Bom Kim, Jung Ha Shin, Jong Ho Lee, Jin Kyung Jo
  • Patent number: 11186749
    Abstract: A slurry composition is disclosed which includes: a corrosion inhibitor including a material selected from carbon allotropes and derivatives thereof; and an oxidant. A method of manufacturing an integrated circuit device is disclosed which includes: forming a first metal film and a second metal film on a substrate, the first metal film and the second metal film respectively including different metals; and polishing, by using the slurry composition, a polishing target surface at which the first metal film and the second metal film are exposed.
    Type: Grant
    Filed: May 20, 2020
    Date of Patent: November 30, 2021
    Inventors: Boyun Kim, Yeryung Jeon, Boun Yoon, Taek Dong Chung, Jae Gyeong Lee, Jin-Young Lee
  • Patent number: 11183397
    Abstract: Systems and methods for etching titanium containing layers on a workpiece are provided. In one example, a method includes placing the workpiece on a workpiece support in a processing chamber. The workpiece includes a first layer and a second layer. The first layer is a titanium containing layer. The method includes admitting a process gas into the processing chamber. The process gas includes an ozone gas and a fluorine containing gas. The method includes exposing the first layer and the second layer on the workpiece to the process gas to at least partially etch the first layer at a greater etch rate relative to the second layer.
    Type: Grant
    Filed: October 15, 2020
    Date of Patent: November 23, 2021
    Assignees: Beijing E-Town Semiconductor Technology, Co., LTD, Mattson Technology, Inc.
    Inventors: Qi Zhang, Haichun Yang, Hua Chung, Ting Xie, Michael X. Yang
  • Patent number: 11177135
    Abstract: A mask member contains tungsten (W), boron (B), and carbon (C). The mask member includes a first portion in contact with a process film, the first portion, in which the terms of the composition ratio, which correspond to boron and carbon, are larger than the term of the composition ratio, which corresponds to tungsten, and a second portion in which the term of the composition ratio, which corresponds to tungsten, is larger than the terms of the composition ratio, which correspond to carbon and boron.
    Type: Grant
    Filed: February 22, 2019
    Date of Patent: November 16, 2021
    Inventors: Yuya Matsubara, Masayuki Kitamura, Atsuko Sakata
  • Patent number: 11171002
    Abstract: Methods of forming fins include masking a region on a three-color hardmask fin pattern, leaving a fin of a first color exposed. The exposed fin of the first color is etched away with a selective etch that does not remove fins of a second color or a third color. The mask and all fins of a second color are etched away. Fins are etched into a fin base layer using the fins of the first color and the fins of the third color.
    Type: Grant
    Filed: February 24, 2020
    Date of Patent: November 9, 2021
    Assignee: Tessera, Inc.
    Inventors: John C. Arnold, Anuja E. DeSilva, Nelson M. Felix, Chi-Chun Liu, Yann A. M. Mignot, Stuart A. Sieg
  • Patent number: 11171013
    Abstract: Provided is a method of selectively etching a substrate comprising at least one cycle of: depositing a chemical precursor on a surface of the substrate to form a chemical precursor layer on the substrate, the substrate comprising a first portion and a second portion, wherein the first and the second portion are of a different composition; selectively removing the chemical precursor layer and at least a part of the first portion of the substrate; and repeating the cycle until the first portion of the substrate is substantially or completely removed, wherein deposition of the chemical precursor and selective removal of the chemical precursor layer and at least a part of the first portion of the substrate are performed under a plasma environment.
    Type: Grant
    Filed: April 22, 2019
    Date of Patent: November 9, 2021
    Assignee: University of Maryland, College Park
    Inventors: Gottlieb S. Oehrlein, Kang-Yi Lin, Chen Li
  • Patent number: 11164750
    Abstract: A substrate processing method includes a first processing step of processing a substrate using phosphoric acid set to a first temperature in a processing tank, and a second processing step of processing the substrate using phosphoric acid set to a second temperature in the processing tank.
    Type: Grant
    Filed: August 27, 2019
    Date of Patent: November 2, 2021
    Assignee: SCREEN Holdings Co., Ltd.
    Inventors: Tomohiro Takahashi, Kei Takechi
  • Patent number: 11158490
    Abstract: A processing apparatus performs a predetermined process on an object to be processed by supplying halogen-based gas into a chamber in which a vacuum is maintained, to which chamber a member having an oxide film formed on a surface thereof is connected, or which chamber has an oxide film formed on a surface thereof, wherein the predetermined processing is performed on the target object once or a plurality of times in the chamber. Later, oxygen gas or dry air is supplied to the chamber to purge the chamber, and then the chamber is opened and exposed to the atmosphere.
    Type: Grant
    Filed: October 3, 2016
    Date of Patent: October 26, 2021
    Inventors: Tomohito Matsuo, Hiroshi Nagaike
  • Patent number: 11158500
    Abstract: Methods for controlling the formation of oxygen containing thin films, such as silicon oxycarbide (SiOC) and silicon oxycarbonitride (SiOCN) thin films, on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor that comprises oxygen and a second reactant that does not include oxygen. In some embodiments the plasma power can be selected from a range to achieve a desired step coverage or wet etch rate ratio (WERR) for films deposited on three dimensional features.
    Type: Grant
    Filed: May 3, 2018
    Date of Patent: October 26, 2021
    Assignee: ASM IP HOLDING B.V.
    Inventors: Lingyun Jia, Viljami J. Pore, Marko Tuominen, Sun Ja Kim, Oreste Madia
  • Patent number: 11154960
    Abstract: Provided is a polishing pad including a polishing surface having a zeta potential of +0.1 mV or more at a pH of 10.0. Preferably, a polishing pad including a polyurethane having a tertiary amine is provided. Further preferably, the polyurethane having a tertiary amine is a reaction product of a polyurethane reaction raw material containing at least a chain extender having a tertiary amine. A polishing method using the polishing pads is also provided, wherein the method is performed while supplying an alkaline polishing slurry.
    Type: Grant
    Filed: July 26, 2017
    Date of Patent: October 26, 2021
    Assignee: KURARAY CO., LTD.
    Inventors: Minori Takegoshi, Mitsuru Kato, Chihiro Okamoto, Shinya Kato
  • Patent number: 11158516
    Abstract: A plasma processing method includes providing a first source power (SP) pulse to an SP coupling element for a first SP pulse duration to generate plasma in a processing chamber, providing a high frequency bias power (HBP) pulse to a substrate holder disposed in the processing chamber for a HBP pulse duration overlapping the first SP pulse duration, and providing a first low frequency bias power (LBP) pulse to the substrate holder for a first LBP pulse duration not overlapping the first SP pulse duration. The HBP pulse includes an HBP pulse frequency that is greater than 800 kHz. The first LBP pulse includes an LBP pulse frequency that is less than about 800 kHz.
    Type: Grant
    Filed: February 7, 2020
    Date of Patent: October 26, 2021
    Inventors: Alok Ranjan, Peter Ventzek, Mitsunori Ohata