Patents Examined by John D. Smith
  • Patent number: 4657786
    Abstract: Black-metallized substrate surfaces which are characterized by the fact that they reflect at most 20% of electromagnetic radiation within the wavelength range from 200 to 5,000 nm and at least 50% within the wavelength range from 7,000 to 24,000 nm, the percentages being relative to the mean value over the entire wavelength range in each case, and which can be used as sunlight collectors are obtained by metallizing activated substrate surfaces without current in metallizing baths which contain a polymeric surface-active compound.
    Type: Grant
    Filed: April 12, 1985
    Date of Patent: April 14, 1987
    Assignee: Bayer Aktiengesellschaft
    Inventors: Kirkor Sirinyan, Rudolf Merten, Henning Giesecke
  • Patent number: 4656055
    Abstract: A three part edge seal for an integrated circuit semiconductor chip is disclosed. The edge seal includes two separate layers of metal one of which overlays the other in electrical contact. One of the metal layers is in ohmic contact with a highly doped region formed in the planar surface of the semiconductor body. The two metal layers serve as an electrical conductor to distribute power to various portions of the integrated circuit contained in the chip and electrically charge the highly doped region to prevent migration of ions into the active areas of the integrated circuits.
    Type: Grant
    Filed: April 18, 1986
    Date of Patent: April 7, 1987
    Assignee: RCA Corporation
    Inventor: Robert A. Dwyer
  • Patent number: 4656048
    Abstract: Disclosed is a method of forming a thick film circuit pattern according which involves moving a nozzle having a slit opening above the surface of a stationary substrate with the elongation of the slit opening being oriented at an angle to the direction of movement of the nozzle and forcing a paste in the nozzle downward through the slit opening onto the substrate to deposit a sufficiently wide and uniformly thick film strip. Preferably, the surface irregularities of the substrate are detected without contacting it for controlling the position of the slit opening above the substrate so that it follows closely parallel with the surface contour line of the substrate.
    Type: Grant
    Filed: November 27, 1985
    Date of Patent: April 7, 1987
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Shinichi Kudoh, Akira Kabeshita, Syuichi Murakami
  • Patent number: 4653175
    Abstract: An applique of a prepatterned film of alpha particle resistant material, such as polyimide, is applied to a semiconductor wafer. The prepatterned film covers only the critical areas e.g. those affected by alpha particle impingement. Bond pads and scribe streets are not covered by the applique.
    Type: Grant
    Filed: March 4, 1986
    Date of Patent: March 31, 1987
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Michael Brueggeman, James W. Clark, William S. Phy
  • Patent number: 4654224
    Abstract: Disclosed are a thermoelectric device and method of making the device. The device has a plurality of thermoelectric elements electrically in series and thermally in parallel, where the individual thermoelectric elements have a thermoelectric body formed of macroscopically disordered material with electrical contact surfaces at opposite ends and a multi-layered diffusion barrier coating on the electrical contact surfaces.
    Type: Grant
    Filed: February 19, 1985
    Date of Patent: March 31, 1987
    Assignee: Energy Conversion Devices, Inc.
    Inventors: David Allred, Krystyna Dec, Nancy Jackett, On Van Nguyen, Jaime Reyes
  • Patent number: 4650691
    Abstract: An electroless copper plating bath is prepared by adding both a metal-cyano-complex used as a stabilizer and an agent for complexing the metal of the metal-cyano-complex to an electroless copper plating bath containing cupric ion, an agent for complexing the cupric ion and a reducing agent, and an article to be plated is immersed in the bath.
    Type: Grant
    Filed: September 24, 1984
    Date of Patent: March 17, 1987
    Assignee: C. Uyemura & Co., Ltd.
    Inventors: Akemi Kinoshita, Ken Araki, Hidemi Nawafune, Shozo Mizumoto
  • Patent number: 4649859
    Abstract: A quartz reactor vessel for growth of uniform semiconductor films includes a vertical, cylindrical reaction chamber in which a substrate-supporting pedestal provides a horizontal substrate-supporting surface spaced on its perimeter from the chamber wall. A cylindrical confinement chamber of smaller diameter is disposed coaxially above the reaction chamber and receives reaction gas injected at a tangent to the inside chamber wall, forming a helical gas stream that descends into the reaction chamber. In the reaction chamber, the edge of the substrate-supporting pedestal is a separation point for the helical flow, diverting part of the flow over the horizontal surface of the substrate in an inwardly spiraling vortex.
    Type: Grant
    Filed: February 19, 1985
    Date of Patent: March 17, 1987
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventor: Mark Wanlass
  • Patent number: 4650696
    Abstract: A process is provided for making semiconductor devices with refractory metal metallization layers in place of aluminum metallization layers. An insulative layer is deposited onto a silicon substrate and a pattern is formed in the insulative layer. Prior to deposition of the metallization layer onto the patterned insulative layer, a layer of polycrystalline silicon is deposited onto the patterned insulative layer by means of a low pressure chemical vapor deposition process. The polycrystalline silicon is deposited to a thickness of preferably 700-800 Angstroms. After deposition of the polycrystalline silicon layer, refractory metal is deposited by means of a low pressure chemical vapor deposition process. Preferably, the refractory metal is deposited to a thickness of one micrometer at a temperature of 300.degree.-600.degree. C. depending on the desired deposition rate.
    Type: Grant
    Filed: October 1, 1985
    Date of Patent: March 17, 1987
    Assignee: Harris Corporation
    Inventor: Joseph S. Raby
  • Patent number: 4649083
    Abstract: The process of forming a composite with an alloy having an alloy component of about 0.5 to 12% aluminum and a matrix selected from a material of the group consisting of copper, iron or nickel. The alloy is heated in an oxygen-rich atmosphere to form a material oxide-rich layer on a surface of the alloy. The alloy is then heated in a reducing atmosphere to reduce the material oxide-rich layer to form an aluminum oxide on the surface of the alloy and a material-rich layer on the aluminum oxide layer.
    Type: Grant
    Filed: September 19, 1984
    Date of Patent: March 10, 1987
    Assignee: Olin Corporation
    Inventors: Julius C. Fister, John F. Breedis
  • Patent number: 4647477
    Abstract: A process for preparing a ceramic substrate for metallization wherein a surface of the ceramic substrate is contacted with an admixture comprised of an inert solid material and a composition containing one or more alkali metal compounds. The admixture and the substrate are heated at least to a temperature at which the alkali metal composition becomes molten. The molten alkali metal composition is kept in contact with the ceramic surface for a time period sufficient to etch the surface and thus prepare it for adherent deposition of metal. The presence of the inert solid material in the admixture prevents coalescence of the alkali metal composition on the ceramic surface. Uniform surface coverage with catalyst and metal and an adherent bond of metal to the ceramic surface are ensured by treatment with the admixture. Furthermore, an article comprised of metal directly and adherently bonded onto a ceramic substrate is provided.
    Type: Grant
    Filed: December 7, 1984
    Date of Patent: March 3, 1987
    Assignee: Kollmorgen Technologies Corporation
    Inventor: Michael A. DeLuca
  • Patent number: 4647476
    Abstract: A glass wafer having high aspect ratio holes passing therethrough is provided with metal conductors in the holes as feedthroughs. First, the wafer is processed to line the holes with a thin electron-conducting layer of metal. Next, a layer of the same or different metal is applied over the first metal layer providing the requisite feedthrough electrical conductivity for each hole. Preferably, the glass contains lead oxide, the first metal layer is lead and the next layer is copper.
    Type: Grant
    Filed: June 3, 1986
    Date of Patent: March 3, 1987
    Assignee: General Electric Company
    Inventor: Thomas R. Anthony
  • Patent number: 4646680
    Abstract: A crucible is disclosed for use in molecular beam epitaxial processing exhibiting low flux transient behavior as shutters of individual furnaces are opened to initiate the process and with excellent flux uniformity over the surface being processed and over the processing time. The crucible is designed for liquid melts of Group III metals, including Gallium, Indium, and Aluminum.The crucible comprises a two member construction in which the outer member, which contains the melt, is typically cylindrical and of maximum capacity consistent with the furnace interior, and an inner member having a conical configuration with a small aperture at the bottom for optimum molecular beam formation. The conical member increases the thermal impedance between the melt surface and the interior of the MBE system to reduce the flux transient and increases the uniformity of the molecular beam over the area being processed, and over the time that the process is being conducted.
    Type: Grant
    Filed: December 23, 1985
    Date of Patent: March 3, 1987
    Assignee: General Electric Company
    Inventor: Paul A. Maki
  • Patent number: 4645574
    Abstract: A method of continuously sequentially coating polyamide filaments with copper and silver which utilizes as a key step in the process the use of a wetter solution containing alcohol, a detergent and an ethylene oxide and propylene oxide copolymer surfactant. The filaments are in the form of multi-filament tows, roving, woven tape or fabric and the steps involve immersing the filaments in a sodium hydroxide trisodium phosphate cleaning solution, followed by a water rinse and then immersion in the wetter solution, followed by water rinse and then followed by a conventional commercial pre-activator, then a commercial palladium chloride/stannous chloride catalytic activator, followed by commercial autocatalytic copper plating as a first copper plating step, followed by a subsequent copper plating step from a copper cyanide bath, followed by a conventional silver plating step, with appropriate water rinses after each of the plating steps, and finally with an alcohol rinse and drying.
    Type: Grant
    Filed: May 2, 1985
    Date of Patent: February 24, 1987
    Assignee: Material Concepts, Inc.
    Inventor: Ralph F. Orban
  • Patent number: 4645683
    Abstract: A method of manufacturing a semiconductor device is provided in which a surface of a substrate containing gallium and arsenic is treated in a first plasma containing hydrogen, and then, is coated with a layer of silicon nitride in a second plasma containing silicon and nitrogen. According to the invention, arsenic is added to the first plasma in the form of arsine. Further, the substrate is heated to a temperature below 450.degree. C. during such treatment. After this treatment, but before the coating, the substrate is superficially converted into a surface layer of gallium and arsenic nitrides in a third plasma containing nitrogen. In this way, an almost ideal passivation of the surface of a gallium and arsenic containing substrate can be obtained.
    Type: Grant
    Filed: October 4, 1985
    Date of Patent: February 24, 1987
    Assignee: U.S. Philips Corporation
    Inventors: Serge Gourrier, Jean-Bernard Theeten
  • Patent number: 4645573
    Abstract: A method of continuously sequentially coating polyester with copper and silver which utilizes as a key step in the process the use of a wetter solution containing alcohol, a detergent and an ethylene oxide and propylene oxide copolymer surfactant. The filaments are in the form of multi-filament tows, roving, woven tape or fabric and the steps involve immersing the filaments in a sodium hydroxide trisodium phosphate cleaning solution, followed by a water rinse and the immersion in the wetter solution, followed by water rinse and then followed by an etch in hydrogen peroxide, followed by a commercial palladium chloride/stannous chloride catalytic activator, followed by a hydrochloric acid immersion, followed by commercial autocatalytic copper plating as a first copper plating step, followed by a subsequent copper plating step from a copper cyanide bath, followed by a conventional silver plating step, with appropriate water rinses after each of the plating steps, and finally with an alcohol rinse and drying.
    Type: Grant
    Filed: May 2, 1985
    Date of Patent: February 24, 1987
    Assignee: Material Concepts, Inc.
    Inventor: Ralph F. Orban
  • Patent number: 4645689
    Abstract: Devices such as photodiodes based on III-V semiconductor materials have been made utilizing a CVD epitaxial procedure. This procedure includes, for example, the use of a combination of liquid and solid chloride transport sources.
    Type: Grant
    Filed: September 3, 1985
    Date of Patent: February 24, 1987
    Assignee: AT&T Bell Laboratories
    Inventor: Herbert M. Cox
  • Patent number: 4645687
    Abstract: A low temperature procedure for depositing III-V semiconductor materials that offers the possibility of higher deposition rates together with abrupt junction formation has been found. This process involves the irradiation at a deposition substrate with a high power density radiation source of deposition gases such as organometallic materials, e.g., trimethyl gallium and trimethyl indium. By utilizing a sufficiently high power density, multiphoton processes are induced in the deposition gas that, in turn, lead to advantageous deposited materials.
    Type: Grant
    Filed: September 16, 1985
    Date of Patent: February 24, 1987
    Assignee: AT&T Laboratories
    Inventors: Vincent M. Donnelly, Robert F. Karlicek, Jr.
  • Patent number: 4643913
    Abstract: A process for producing solar cells which comprises applying a composition for anti-reflection coating formation on one side of a silicon base plate having a p-n junction therein, printing an Ag paste for contact formation on predetermined areas of the coat, and heat-treating the resulting plate at a temperature of 400.degree. to 900.degree. C. to complete anti-reflection coating and a light-receiving side contact, the process being characterized in that the composition for anti-reflection coating formation contains as essential component, (a) at least one member selected from the metal-organic ligand complex compounds represented by the general formula M(OR.sub.1).sub.n (L).sub.a-n wherein M is a metal selected from Zn, Al, Ga, In, Ti, Zr, Sn, V, Nb, Ta, Mo, and W; R.sub.1 is a C.sub.1 -C.sub.18 alkyl group; L is an organic ligand which forms an non-hydrolyzable bond with the metal ion; a is the valency of the metal M; and n is an integer satisfying 1.ltoreq.
    Type: Grant
    Filed: December 28, 1984
    Date of Patent: February 17, 1987
    Assignee: Hitachi, Ltd.
    Inventors: Masaaki Okunaka, Mitsuo Nakatani, Haruhiko Matsuyama, Hitoshi Yokono, Tokio Isogai, Tadashi Saitoh, Kunihiro Matsukuma, Sumiyuki Midorikawa, Satoru Suzuki
  • Patent number: 4643793
    Abstract: A process for treating a surface of a metal such as copper with a liquid composition comprising (I) copper ions, a complexing agent, a reducing agent, a pH adjusting agent, water, and (II) a nitrogen-containing organic compound such as heterocyclic compound or containing --N.dbd. and --NH.sub.2 and/or --OH groups in its molecule can give multilayer printed wiring boards having excellent adhesive strength and line definition of inner layer copper conductors with long shelf life.
    Type: Grant
    Filed: July 1, 1985
    Date of Patent: February 17, 1987
    Assignee: Hitachi Chemical Company, Ltd.
    Inventors: Akishi Nakaso, Youichi Kaneko, Toshiro Okamura, Kiyoshi Yamanoi
  • Patent number: 4643918
    Abstract: A method of preparation of fiberglass filaments for subsequent coating with metal wherein the fiberglass filaments first are immersed in a wetter solution containing alcohol, a detergent, and an ethylene oxide and propylene oxide copolymer surfactant. Following this treatment the filaments may be treated with conventional palladium chloride or tin chloride activators, followed by treatment with an acid accelerator and then autocatalytically coated with metals such as copper, gold, palladium, cobalt, nickel, and nickel alloys of phosphorus, boron, or tungsten. A second electroplating or immersion plating step may be included where the metal-coated filaments are electroplated or immersion plated with either the same metal, or a different metal taken from the group consisting of nickel, silver, zinc, cadmium, platinum, iron, cobalt, chromium, tin, lead, rhodium, ruthenium, or iridium.
    Type: Grant
    Filed: May 3, 1985
    Date of Patent: February 17, 1987
    Assignee: Material Concepts, Inc.
    Inventor: Ralph F. Orban