Patents Examined by John H. Newsome
  • Patent number: 4670294
    Abstract: A method for the manufacture of a semiconductor photoelectric conversion device in which a plurality n of semiconductor elements U.sub.1 to U.sub.n are sequentially formed side by side on a substrate and connected in series one after another. The element U.sub.i (i=1, 2, 3, . . . n) comprises a first electrode E.sub.i on the substrate, a non-single-crystal semiconductor laminate member Q.sub.i on the electrode E.sub.i and a second electrode F.sub.i on the laminate member Q.sub.i. The electrode F.sub.j+1 of the element U.sub.j+1 (j=1, 2, . . . (n-1)) is connected via coupling portion K.sub.j to the first electrode E.sub.j. After the formation of a first conductive layer on the substrate, the electrode E.sub.1 to E.sub.n are provided by forming grooves G.sub.1 to G.sub.n-1 in the first conductive layer. A non-single-crystal semiconductor laminate layer forming the laminate members Q.sub.1 to Q.sub.n is formed to cover the electrodes E.sub.1 to E.sub.n and the grooves G.sub.1 to G.sub.n-1, after which grooves O.
    Type: Grant
    Filed: June 13, 1984
    Date of Patent: June 2, 1987
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shunpei Yamazaki
  • Patent number: 4670295
    Abstract: In a method of manufacturing, the steps of: providing a workpiece comprising a main body and a machine-readable marking on a portion of the body, depositing on the marking and the surrounding surface an overcoating of a liquid polymeric composition that is curable by exposure to ultraviolet radiation, and then irradiating the liquid overcoating with ultraviolet radiation so that the overcoating cures to a solid nontacky, light-transmitting protective coating. The workpiece, with the cured protective coating thereon, may be subjected to processing steps wherein extraneous matter may adhere to the coating, and then be cleaned leaving the cured coating intact.
    Type: Grant
    Filed: February 26, 1986
    Date of Patent: June 2, 1987
    Assignee: RCA Corporation
    Inventors: Robert L. Quinn, Philip M. Heyman, Abraham Goldman
  • Patent number: 4670290
    Abstract: A multiple torch type plasma spray coating method and a multiple torch type plasma spray coating apparatus in which a main torch and an auxiliary torch are disposed so that their center axes may intersect each other, is improved in that laminar flow plasma is generated by the main torch, spray coating material is charged into the plasma flame in the proximity of the outlet of the main plasma torch, the plasma flame is blown onto an object to be treated, plasma is separated from the plasma flame just in front of the object to be treated, and the then left spray coating material is made to deposit onto the object to be treated.
    Type: Grant
    Filed: May 12, 1986
    Date of Patent: June 2, 1987
    Assignees: Rikagaku Kenkyusho, Onoda Cement Company, Ltd.
    Inventors: Tsutomu Itoh, Haruo Tateno, Hideo Nagasaka, Masahiro Yamamoto, Yusuke Mitsuyoshi, Susumu Matsuno, Hiroshi Saitoh, Masayuki Kitoh
  • Patent number: 4668527
    Abstract: A method for amorphizing a material comprises attaching a thin film consisting of exotic atoms to a parent material, irradiating the two layer material under given conditions of irradiation from the side of the thin film with electron beams, and injecting forcibly the exotic atoms into the parent material to change the material into an amorphous material. This method can produce amorphous materials having new functions.
    Type: Grant
    Filed: September 16, 1985
    Date of Patent: May 26, 1987
    Assignee: Osaka University
    Inventors: Hiroshi Fujita, Naoto Sumida
  • Patent number: 4668528
    Abstract: The invention relates to visible-laser deposition reactions of metal containing oxyhalide vapors, such as, chromyl chloride vapor, CrO.sub.2 Cl.sub.2, for direct writing of metal containing opaque oxide patterns on various substrates (S.sub.i, S.sub.i O.sub.2, GaAs and glass). Deposition at low laser power is by photolyses of adsorbed reactant molecules. Higher powers initiate deposition photochemically and continue it with a combined photolytic/pyrolytic reaction, simultaneously inducing a solid-phase conversion of the deposited film. Mixed Cr.sub.2 O.sub.3 /CrO.sub.2 thin films of 1-nanometer to several-micrometer thickness, as well as 1-millimeter-long single crystals of Cr.sub.2 O.sub.3, can be grown with this process, the latter at rates up to 3 .mu.m/s. Thin chromium oxide films produced in this manner are strongly ferromagnetic. Mass spectrometer and optical transmission measurements show that surface kinetics dominate the nucleation and growth rates.
    Type: Grant
    Filed: April 9, 1986
    Date of Patent: May 26, 1987
    Assignee: Massachusetts Institute of Technology
    Inventors: Daniel J. Ehrlich, Claudio Arnone, Mordecai Rothschild
  • Patent number: 4666734
    Abstract: An apparatus and a process for mass production of films by vacuum deposition comprise a substrate charging stage which is evacuated, an interconnecting stage which is positioned adjacent to said substrate charging stage and is evacuated, and a film forming stage which is removably attached to the interconnecting stage and is evacuated independently of the interconnecting stage.
    Type: Grant
    Filed: May 5, 1983
    Date of Patent: May 19, 1987
    Assignee: Canon Kabushiki Kaisha
    Inventors: Osamu Kamiya, Keijiro Nishida, Yasutomo Fujiyama, Kyosuke Ogawa
  • Patent number: 4666735
    Abstract: A multilayered composite product useful as an electrical circuit is produced by coating a base with a photoimagable resin free of catalyst or catalyst activator for electroless metal deposition. The resin is patterned by exposure to a desired light, through a mask followed by development. The patterned cured resin is selectively chemically modified while avoiding chemical modification of the base to render the cured resin receptive to a metal catalyst. The metal catalyst which promotes subsequent electroless metal deposition is selectively absorbed on the patterned cured resin and is converted to a catalytically active form. A conductive metal then is deposited selectively on the catalyst-containing patterned cured resin.
    Type: Grant
    Filed: October 30, 1985
    Date of Patent: May 19, 1987
    Assignee: Polyonics Corporation
    Inventors: Merwin F. Hoover, Ann B. Salamone, Jan Vandebult
  • Patent number: 4664935
    Abstract: Apparatus and method for the deposition of a thin metal film on a surface of a workpiece as the workpiece is positioned adjacent to a deposition source and as the workpiece and deposition source rotate relative to each other about a first axis. The workpiece can also be moved relative to the deposition source about a second axis as the workpiece and the deposition source rotate relative to each other about the first axis. The distance between the workpiece and the deposition source can be adjusted.
    Type: Grant
    Filed: September 24, 1985
    Date of Patent: May 12, 1987
    Assignee: Machine Technology, Inc.
    Inventor: Thomas L. Strahl
  • Patent number: 4664937
    Abstract: A method of depositing a semiconductor alloy film onto a substrate by activating at least one group of free radicals and incorporating desired ones of the activated group into the film.
    Type: Grant
    Filed: April 21, 1986
    Date of Patent: May 12, 1987
    Assignee: Energy Conversion Devices, Inc.
    Inventors: Stanford R. Ovshinsky, David D. Allred, Lee Walter, Stephen J. Hudgens
  • Patent number: 4664057
    Abstract: A photoprocessing apparatus for processing substrates includes a chamber for holding the substrates and a light source for providing an electromagnetic beam along an axis. A substantially conical reflector is positioned along the axis of the electromagnetic beam to reflect the electromagnetic beam as a plane of light into the chamber. The substrates are arranged in the chamber with respect to the plane of light reflected by the substantially conical reflector, by being either substantially parallel to or substantially normal to the plane of light. If the substrates are substantially parallel to the plane of light and the chamber is filled with a reaction gas, photo-deposition will occur when the plane of light irradiates the reaction gas adjacent to a substrate, so that a film is deposited on the substrate. Other photoprocessing techniques such as photo-etching can be performed when the substrates are arranged normal to the plane of light.
    Type: Grant
    Filed: December 20, 1985
    Date of Patent: May 12, 1987
    Assignee: Allied Corporation
    Inventor: Hamid Hemmati
  • Patent number: 4664960
    Abstract: Designed tailormade nonequilibrium synthetic disordered materials are provided containing nonperiodically distributed local environments whose position and type are controlled to obtain specific properties which can be coupled or decoupled one from another and collectively from the constraints implied by an ordered structure. Atoms or groups of atoms can be placed in the matrix in specific designed positions to compensate the spins to obtain unusual physical and chemical properties. The compositional variation which produces the required nonequilibrium "multi-disordered" materials is accomplished by selectively depositing desired atoms and groups of atoms into designed locations to permit the construction of a true three-dimensionally engineered material. Where order is an engineering need, it can be designed in a local scale or interspersed in varying amounts including layers through the material to create new material functions.
    Type: Grant
    Filed: April 22, 1985
    Date of Patent: May 12, 1987
    Assignee: Energy Conversion Devices, Inc.
    Inventor: Stanford R. Ovshinsky
  • Patent number: 4663184
    Abstract: Radiation curable phosphorate ester compounds of the following formula: ##STR1## wherein, Rd is selected from the group consisting of ##STR2## wherein n=1-3, and those bond sites on Y not occupied by Rd are occupied by a moiety selected from the group consisting of --H and --ReOH wherein Re is a straight chain or branched alkyl having 1 to 20 carbon atoms;Ra is selected from --H and --CH.sub.3 ;--Y-- is a hydrocarbon moiety selected from the group consisting of straight chain, cyclic ad branched aliphatic, aromatic, and alicyclic moieties of 1-30 carbon atoms; andR is an alkylene moiety having 2 to 5 carbon atoms;R.sub.f is selected from the group consisting of hydrogen or methyl;A is selected from the group consisting of ##STR3## in which n1 is an integer from 1 to 6; and R.sub.g is selected from the group consisting of alkylene moieties having 2 to 10 carbon atoms, 5- or 6-membered carbocyclic aliphatic radicals having 5 to 10 carbon atoms, and arylene radicals having 6 to 10 carbon atoms; andm=1-10.
    Type: Grant
    Filed: October 22, 1985
    Date of Patent: May 5, 1987
    Assignee: Minnesota Mining and Manufacturing Company
    Inventor: Ramon F. Hegel
  • Patent number: 4659906
    Abstract: A nonfocused infrared panel emitter and method of making the same. The panel emitter includes a primary emitter positioned between an insulating layer and a secondary emitter. Preferably, the primary emitter comprises a metal foil having a pattern formed by etching. The secondary emitter may be either a woven alumina cloth, or a sheet of glass which is transparent to infrared radiation. In one embodiment of the invention, a layer of somewhat compressible, high temperature resistant paper is placed on either side of the metal foil to accommodate expansion and contraction thereof. In one method of making the panel emitter, a mesh sheet is positioned adjacent the metal foil and the sheet is vaporized by heating to create a void adjacent the foil to allow for thermal expansion and contraction of the foil.
    Type: Grant
    Filed: July 1, 1985
    Date of Patent: April 21, 1987
    Assignee: Vitronics Corporation
    Inventor: Edward J. Furtek
  • Patent number: 4657779
    Abstract: An ultraviolet-curable liquid coating composition which possesses minimal substrate deformational shrinkage on cure is disclosed in which (A) a cationically curable polyepoxide having a 1,2-epoxy equivalency of at least 1.3 is used in admixture with (B) an acrylate-functional compound which is either (1) a monoacrylate-functional compound carrying at least two primary hydroxy groups; or (2) an epoxy-functional monoacrylate in admixture with a compound carrying a plurality of primary hydroxyl groups. An acrylate-functional liquid (C), preferably a monoacrylate, is used to provide coating viscosity, and a catalyst component capable of initiating, on ultraviolet exposure, both the conventional free-radical polymerization of ethylenically unsaturated monomers, and the cationic polymerization of polyepoxides in the presence of a compound carrying the primary hydroxy group.
    Type: Grant
    Filed: March 19, 1986
    Date of Patent: April 14, 1987
    Assignee: DeSoto, Inc.
    Inventor: Joseph E. Gaske
  • Patent number: 4657780
    Abstract: In a method of manufacturing a diffraction grating, the grating-bearing surface of a master grating is coated with a release agent, and a rigid substrate has a layer of ultravoilet sensitive liquid resin applied thereto before bringing the master grating and the substrate together to trap a film of the liquid resin therebetween, whereafter the liquid resin is cured by exposure to ultraviolet light through the master grating and the master grating and resin-profiled substrate are separated prior to completion of the diffraction grating by deposition of a thin metal film on the resin-profiled surface of the substrate.
    Type: Grant
    Filed: July 29, 1985
    Date of Patent: April 14, 1987
    Assignee: Dr. Johannes Heidenhain GmbH
    Inventors: Robert M. Pettigrew, Robert J. Longman
  • Patent number: 4656052
    Abstract: In a process for the production of a high-hardness boron nitride film by vacuum-depositing a boron component on a substrate from a boron-containing vacuum deposition source and simultaneously irradiating the substrate with an ion seed comprising at least nitrogen from an ion-generating source, if the atomic ratio (B/N) between boron and nitrogen supplied from the vacuum deposition source and the ion seed is adjusted within a range of from 4 to 25, the ion acceleration energy of the ion seed is adjusted to 5 to 100 KeV per atom of the ion seed and vacuum deposition and irradiation are carried out in an atmosphere of a nitrogen atom or nitrogen compound activated at an energy level lower than that of the ion seed, the hardness and quality of the film are highly improved. Furthermore, if a negative bias voltage is applied to the substrate at the vacuum deposition and irradiation with the seed ion, the film-forming speed can be increased and the hardness and quality of the film are further improved.
    Type: Grant
    Filed: February 12, 1985
    Date of Patent: April 7, 1987
    Assignee: Kyocera Corporation
    Inventors: Mamoru Satou, Kohichi Yamaguchi
  • Patent number: 4656083
    Abstract: A method of treating articles to improve their biocompatibility is disclosed. A substrate material is positioned within a reactor vessel and exposed to plasma gas discharge in the presence of an atmosphere of an inert gas and then in the presence of an organic gas, such as a halocarbon or halohydrocarbon gas, capable of forming a thin, biocompatible surface covalently bonded to the surface of the substrate. The method is particularly useful in the treatment of vascular graft materials to improve their biocompatibility.
    Type: Grant
    Filed: March 11, 1985
    Date of Patent: April 7, 1987
    Assignee: Washington Research Foundation
    Inventors: Allan S. Hoffman, Andrew Garfinkle, Buddy D. Ratner, Stephen R. Hanson
  • Patent number: 4654226
    Abstract: A photochemical vapor deposition apparatus includes a reactor housing having a window in one wall above a reaction chamber in the housing. A transparent curtain divides the reaction chamber into a reaction zone and a flush zone. At least one substrate is mounted in the reaction zone in light communication with the window so that ultraviolet radiation may penetrate through the window into the reaction zone. The window is kept clear by a gas flowing through the flush zone.
    Type: Grant
    Filed: March 3, 1986
    Date of Patent: March 31, 1987
    Assignee: The University of Delaware
    Inventors: Scott C. Jackson, Richard E. Rocheleau
  • Patent number: 4650747
    Abstract: A polyolefin resin composition containing 5 to 150 ppm of an antioxidant and a high-concentration (e.g. 40 to 80% by weight) titanium dioxide pigment is diluted with a polyolefin resin to prepare a medium-concentration (e.g. 20 to 60% by weight) titanium dioxide pigment-containing photographic master batch, then this master batch is further diluted with a polyolefin resin to form a low-concentration (e.g. 5 to 20% by weight) titanium dioxide pigment-containing resin composition, and this resin composition is melt extruded and coated on a support made of paper or a synthetic paper to produce photographic resin coated paper. According to this process, both die lip staining and formation of microgrits are prevented.
    Type: Grant
    Filed: September 27, 1984
    Date of Patent: March 17, 1987
    Assignee: Mitsubishi Paper Mills, Ltd.
    Inventors: Akira Uno, Akira Ninohira, Touru Noda
  • Patent number: 4649059
    Abstract: A novel method and system for depositing films of selected metallic or semiconductor materials, and particularly of the group III, IV, and V elements, is described which comprises heating a halide compound of the material to produce vapor within a substantially closed chamber, irradiating the vapor with light of preselected wavelength to dissociatively photoionize the vapor into the constituent positive ions of the material and negative halogen ions, and subjecting the photoionized vapor to an electric field to selectively remove the positive ions of the material for plating as a film.
    Type: Grant
    Filed: May 29, 1985
    Date of Patent: March 10, 1987
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: James G. Eden, David B. Geohegan