Abstract: [Object] To provide a negative type photosensitive siloxane composition capable of forming a cured film excellent in heat resistance and critical thickness for cracking [Means] The present invention provides a negative type photosensitive siloxane composition comprising: a polysiloxane containing silanol in a specific content, a particular photo base generator, and a solvent. The content of silanol is measured by FT-IR.

Abstract: [Object] To provide a positive type photosensitive composition capable of forming a cured film having high transparency [Means] The present invention provides a positive type photosensitive siloxane composition comprising: a polysiloxane, a diazonaphthoquinone derivative, an additive having a >N—C(?O)— or >N—C(?S)— structure and the capability of interacting with the polysiloxane, and a solvent. The polysiloxane and the additive interact with each other before exposure, but they lose the interaction after exposure.

Abstract: A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of a sulfonamide having an iodized aromatic ring, and recurring units (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group exhibits a high sensitivity, high resolution, low edge roughness and improved CDU, and forms a pattern of good profile after exposure and development.

Abstract: The present invention relates to a photosensitive resin composition having high sensitivity, high bending resistance for the cured film, and high long-term reliability for an organic EL display device in which the cured film is used. The present invention is a photosensitive resin composition containing an alkali-soluble resin (a), a phenolic resin (b) having a halogen atom, and a photosensitive compound (c).

Abstract: A photoresist is disclosed. The photoresist includes a polymer with one repeating unit and an absorbing unit.

Abstract: A salt represented by formula (I), a generator and a resist composition: wherein R1 and R2 each independently represent an iodine atom, a fluorine atom or an alkyl fluoride group having 1 to 6 carbon atoms; R4, R5, R7 and R8 each independently represent a halogen atom, a hydroxy group, a haloalkyl group having 1 to 12 carbon atoms or an alkyl group having 1 to 12 carbon atoms, —CH2— included in the haloalkyl group and the alkyl group may be replaced by —O—, —CO—, —S— or —SO2—; X1 and X2 each independently represent an oxygen atom or a sulfur atom; m1 represents 1 to 5, m2 and m8 represent 0 to 5, and m4, m5 and m7 represent an integer of 0 to 4, in which 1?m1+m7?5, 0?m2+m8?5; and AI? represents an organic anion.

Abstract: A single layer process is utilized to reduce swing effect interference and reflection during imaging of a photoresist. An anti-reflective additive is added to a photoresist, wherein the anti-reflective additive has a dye portion and a reactive portion. Upon dispensing the reactive portion will react with underlying structures to form an anti-reflective coating between the underlying structure and a remainder of the photoresist. During imaging, the anti-reflective coating will either absorb the energy, preventing it from being reflected, or else modify the optical path of reflection, thereby helping to reduce interference caused by the reflected energy.

Abstract: The present invention provides a negative-type photosensitive resin composition capable of obtaining a cured film suppressing generation of development residues caused by a pigment and having high sensitivity and excellent heat resistance and light blocking capability. A negative-type photosensitive resin composition contains an alkali-soluble resin (A), a radical-polymerizable compound (B), a photopolymerization initiator (C1), and a pigment (D1).

Abstract: A digitally imageable, photopolymerizable relief precursor at least comprising, arranged one above another in the order stated, (A) a dimensionally stable carrier; (AH) optionally, an adhesion-promoting layer; (B) a relief-forming layer, at least comprising a crosslinkable elastomeric binder, a first ethylenically unsaturated monomer, and a photoinitiator; (C) at least one interlayer, at least comprising a first, non-radically crosslinkable elastic polymer; (D) a laser-ablatable mask layer, at least comprising a second, non-radically crosslinkable elastic polymer, a UVA light-absorbing material, and an IR light-absorbing material; and optionally (E) a removable cover layer; characterized in that the layer (C) and optionally the layer (D) comprise at least one second ethylenically unsaturated monomer.

Abstract: Methods and materials for making a semiconductor device are described. The method includes forming a photoresist over a substrate. The photoresist includes an acid-labile group (ALG) connected to a polar unit. The method also includes exposing the photoresist to a radiation beam, baking the photoresist and performing a developing process to the photoresist.

Abstract: Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that in a first aspect comprise a crosslinker component that comprises a structure of the following Formula (I):

Abstract: A salt represented by formula (I), an acid generator and a resist composition: wherein R1, R2 and R3 each represent a hydroxy group, —O—R10, —O—CO—O—R10 or —O-L1-CO—O—R10, L1 represents an alkanediyl group, R4, R5, R6, R7, R8 and R9 each represent a halogen atom, an alkyl fluoride group or a hydrocarbon group, R10 represents an acid-labile group, X1, X2 and X3 each independently represent an oxygen atom or a sulfur atom, m1 is an integer of 1 to 5, m2, m3, m8 and m9 represent an integer of 0 to 5, m4, m5, m6 and m7 represent an integer of 0 to 4, in which 1?m1+m7?5, 0?m2+m8?5, 0?m3+m9?5, and AI? represents an organic anion.

Abstract: Describe herein is a composition comprising: an acrylic polymer comprising repeat units selected from ones having structure (1), (2), (3), (4), (5), (6), and (7) wherein these repeat units are present in said acrylic polymer in the mole % ranges as described herein; a Novolak resin having a dissolution rate in 0.26 N aqueous TMAH of at least 50 ?/sec; a diazonaphthoquinone (DNQ) photoactive compound (PAC); and an organic spin casting solvent, and a process of using said composition as a positive photoresist developable in aqueous base.

Abstract: A semiconductor device having a copper wiring and an insulating layer provided on the copper wiring, where after storage in air with a humidity of 5% for 168 hours at 150° C., the area of void portion of the copper wiring is 10% or less at the copper wiring surface in contact with the insulating layer. The insulating layer contains at least one polyimide that has (i) a structure derived from 4,4?-oxydiphthalic acid dianhydride and a structure derived from 4,4?-diaminodiphenyl ether; or (ii) a structure derived from 3,3?4,4?-biphenyltetracarboxylic acid dianhydride and a structure derived from 4,4?-diaminodiphenyl ether; or (iii) a structure derived from 4,4?-oxydiphthalic acid dianhydride and a structure derived from 2,2?-dimethyl-4,4?-diaminobiphenyl.

Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.

Abstract: A method for producing a polyimide precursor having a structural unit represented by the following formula (1), comprising the following steps (i) and (ii), wherein at least one of the steps of (i) and (ii) is carried out in a solvent comprising a compound having an ether bond and an amide bond: (i) a step of reacting carboxylic anhydride with a diamine compound to obtain a polyimide precursor having a structural unit represented by the following formula (2); and (ii) a step of reacting the polyimide precursor having a structural unit represented by the formula (2) with a compound represented by the following formula (8), and reacting the reactant with a compound represented by the following formula (9) to obtain a polyimide precursor having a structural unit represented by the following formula (1): wherein in the formula (1), at least one of R1 and R2 is a group represented by the formula (3):

Abstract: A pattern formation method, comprising: (a) providing a semiconductor substrate; (b) forming a photoresist pattern over the semiconductor substrate, wherein the photoresist pattern is formed from a photoresist composition comprising: a first polymer comprising acid labile groups; and a photoacid generator; (c) coating a pattern overcoat composition over the photoresist pattern, wherein the pattern overcoat composition comprises a second polymer and an organic solvent, wherein the organic solvent comprises one or more ester solvents, wherein the ester solvent is of the formula R1—C(O)O—R2, wherein R1 is a C3-C6 alkyl group and R2 is a C5-C10 alkyl group; (d) baking the coated photoresist pattern; and (e) rinsing the coated photoresist pattern with a rinsing agent to remove the second polymer. The methods find particular applicability in the manufacture of semiconductor devices.

Abstract: The present invention provides a positive photosensitive resin composition having high light transmittance, high heat resistance, and excellent pattern processability. The present invention provides a positive photosensitive resin composition containing polysiloxane (A), a naphthoquinonediazide compound (B), and a solvent (C); in which the polysiloxane (A) has at least one structure selected from the following general formulae (1) to (3), and has at least one structure selected from the following general formulae (4) to (6); in which, in the general formulae (1) to (3), R4 represents a C2-C6 hydrocarbon group having an unsaturated double bond; R1 represents a single bond or a C1-C4 alkylene group; R2 in the general formula (2) represents a hydrogen atom or a C1-C4 alkyl group; and R3 in the general formula (3) represents an organic group; in which R2 in general formula (5) represents a hydrogen atom or a C1-C4 alkyl group; and R3 in the general formula (6) represents an organic group.

Abstract: This disclosure relates to a photosensitive composition that includes at least one fully imidized polyimide polymer having a weight average molecular weight in the range of about 20,000 Daltons to about 70,000 Daltons; at least one solubility switching compound; at least one photoinitiator; and at least one solvent. The composition is capable of forming a film or a dry film having a dissolution rate of greater than about 0.15 micron/second using cyclopentanone as a developer.

Abstract: The present disclosure is directed to organotin cluster compounds having formula (I) and their use as photoresists in extreme ultraviolet lithography processes.