Abstract: A method for depositing an iodine-containing film on a substrate material comprises: exposing the substrate material to a vapor of a film-forming composition comprising an iodine-containing precursor having a formula of CaHxIyFz, wherein a=1-10, x?0, y?1, z?0, x+y+z=a, 2a or 2a+2; provided that when a=1, x=2 and z=0, y is not equal to 2, and depositing the iodine-containing film formed by the iodine-containing precursor on the substrate material through a vapor deposition method. The method further comprises exposing the substrate material to a vapor of a co-reactant nitrogen-containing molecule having a general formula CxHyFzNH, where x=1-6, y=0-13, z=0-13, and a=1-2 or CxHyFzN—R1, where x=1-6, y=0-13, z=0-13, and R1 is a C1-C5 hydrocarbon.

Abstract: The invention relates to a method for producing a cold forming tool, particularly for cold forming super-high-strength steels, wherein the cold forming tool is the upper and/or lower tool of a forming tool set, wherein the cold forming tool is made of a metal material and has a forming surface that is designed so that a formed metal sheet has the desired final contour of the component, characterized in that a hard material layer is deposited on the forming surface of the forming tool by means of physical gas-phase deposition, wherein the hard material layer consists of a titanium nitride adhesive layer and alternating layers of aluminum titanium nitride and aluminum chromium nitride deposited thereon, wherein a titanium nitride top layer or alternatively a titanium carbon nitride top layer is deposited as the final layer as the outermost outer surface oriented toward a workpiece that is to be formed.

Abstract: A component configured to be in contact with a hydrocarbon fluid and a method of preparing a contact surface of the component. The component may include a wall having the contact surface configured to be in contact with the hydrocarbon fluid. The contact surface is formed from a metal comprising a metal M, where M is selected from the group consisting of nickel (Ni), palladium (Pd), and platinum (Pt). A metal-ligand complex comprising phosphorus (P) is on the contact surface. The method of preparing a contact surface of the component may include treating the contact surface with a metal-ligand complex precursor comprising a phosphorus (P) ligand.

Abstract: Methods and systems for treating components are described. The methods include using a system having a controller, a laser applicator, a coating applicator, and a sensor array. The laser applicator, the coating applicator, and the sensor array are arranged on a treatment arm that is controlled by the controller. The method includes scanning a surface to be treated of the component using the sensor array, cleaning the surface to be treated using the laser applicator, defining surface texture patterns, applying laser texturing, and applying a new coating to the surface to be treated using the coating applicator.

Abstract: A method for applying a coating having at least one TiCN layer to a surface of a substrate to be coated by means of high power impulse magnetron sputtering (HIPIMS), wherein, to deposit the at least one TiCN layer, at least one Ti target is used as the Ti source for producing the TiCN layer, said target being sputtered in a reactive atmosphere by means of a HIPIMS process in a coating chamber, wherein the reactive atmosphere comprises at least one inert gas, preferably argon, and at least nitrogen gas as the reactive gas, wherein: the reactive atmosphere additionally contains, as a second reactive gas, a gas containing carbon, preferably CH4, used as the source of carbon to produce the TiCN layer wherein, while depositing the TiCN layer, a bipolar bias voltage is applied to the substrate to be coated, or at least one graphite target is used as the source of carbon for producing the TiCN layer, said target being used for sputtering in the coating chamber using a HIPIMS process with the reactive atmosphere h

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises forming a convertible layer on the substrate and exposing the substrate to a conversion reactant. Accordingly, at least a part of the convertible layer is converted into a gap filling fluid. The gap filling fluid at least partially fills the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

Abstract: The invention relates to a method for adhesion of a thin film or functional layer to a substrate by applying a pulsed and/or alternating voltage.

Abstract: Exemplary deposition methods may include introducing hydrogen into a processing chamber, a powder disposed within a processing region of the processing chamber. The method may include striking a first plasma in the processing region, the first plasma including energetic hydrogen species. The method may include exposing the powder to the energetic hydrogen species in the processing region. The method may include chemically reducing the powder through a reaction of the powder with the energetic hydrogen species. The method may include removing process effluents including unreacted hydrogen from the processing region. The method may also include forming a layer of material on grains of the powder within the processing region.

Abstract: A method for controlling stretching of a mask includes: obtaining actual position information of at least one opening of the mask; determining an actual offset of each opening according to actual position information of the opening and preset position information of a light-emitting region of a sub-pixel corresponding to the opening; determining whether the actual offset of the opening is less than or equal to a theoretical maximum offset of the opening; and in response to determining that the actual offset of the opening is less than or equal to the theoretical maximum offset of the opening, generating a first end command for ending a process of stretching the mask.

Abstract: Provided is a method for manufacturing a liquid ejection head including an ejection orifice for ejecting a liquid, a substrate and a flow path forming member that is joined to the substrate to form a liquid flow path communicating with the ejection orifice, the method including: (1) forming a resin layer having a flow path mold pattern, on the substrate; (2) adding a hydrophilizing material represented by Chemical Formula 1 to an entire surface layer of the resin layer; (3) forming a covering resin layer serving as the flow path forming member, on the resin layer and forming a compatible layer containing the resin layer, the covering resin layer and the hydrophilizing material, at an interface between the resin layer and the covering resin layer; (4) forming the ejection orifice by exposing the covering resin layer; and (5) forming a flow path by removing the resin layer.

Abstract: Embodiments herein provide methods of plasma treating an amorphous silicon layer deposited using a flowable chemical vapor deposition (FCVD) process. In one embodiment, a method of processing a substrate includes plasma treating an amorphous silicon layer by flowing a substantially silicon-free hydrogen treatment gas into a processing volume of a processing chamber, the processing volume having the substrate disposed on a substrate support therein, forming a treatment plasma of the substantially silicon-free hydrogen treatment gas, and exposing the substrate having the amorphous silicon layer deposited on a surface thereof to the treatment plasma. Herein, the amorphous silicon layer is deposited using an FCVD process.

Abstract: A substrate processing method includes: a heating process of heating a substrate, which is placed on a stage disposed in a container and has a recess formed on one surface of the substrate, to a first temperature; a depositing process of depositing a thermally decomposable organic material on a front surface of the substrate by supplying a material gas into the container; and a removing process of removing the organic material deposited on a periphery of the recess and a back surface of the substrate, which is opposite to the one surface of the substrate, by holding the substrate at a position spaced apart from the stage and heating the substrate to a second temperature higher than the first temperature.

Abstract: One variation of the method includes: receiving a section of a substrate tape including a substrate within a coating zone; depositing a constellation of separator material droplets over the first substrate, each droplet in the constellation of separator material droplets including a first solvent, a first polymer, and a second polymer; heating the substrate and the proportion of the separator material to a first temperature; dissolving the second polymer out of the constellation of separator material droplets to render an open-celled network of pores by washing the constellation of separator material droplets and the substrate with a second solvent; and irradiating the constellation of separator material droplets to crosslink the first polymer and form a discrete separator layer with the open-celled network of pores sized to transport ions through the discrete separator layer.

Abstract: The present disclosure relates to a substrate processing method, and more particularly, to a substrate processing method for improving the physical properties of a thin film formed on a substrate.

Abstract: Systems and methods of forming a thin film on substrate includes positioning the substrate in a chamber; generating, via a uniform microwave field generator, a microwave field around the substrate; and guiding radicals into the chamber so that plasma is generated about the substrate to form the thin film on the substrate.

Abstract: Systems and methods relate to applying a coating to a substrate. Coatings can be generated using layer-by-layer application techniques. Typically, application of a first aqueous solution is alternated with application of a second aqueous solution. Example first aqueous solutions include polyethyleneimine (PEI) and hydroxy-terminated poly(dimethylsiloxane) (PDMS-OH). Example second aqueous solutions include silicate and PDMS-OH. In some instances, first aqueous solutions and/or second aqueous solutions additionally include methyl-terminated PDMS (PDMS-CH3).

Abstract: A method of making a semiconductor device includes comparing a thickness profile of a surface of a wafer with a reference value using a control unit. The method further includes transmitting a control signal to an adjustable nozzle based on the comparison of the thickness profile and the reference value. The method further includes rotating the adjustable nozzle about a longitudinal axis of the adjustable nozzle in response to the control signal.

Abstract: The invention provides a method for suppressing thermal runaway of lithium batteries, which is included a step of providing a lithium battery capable of performing charging and discharging, which includes an electrochemical reaction system. When the temperature of the lithium battery reaches to a predetermined temperature, a metal ion (A) and an amphoteric metal ion (B) are applied to the positive active material layer and the negative active material layer of the lithium battery to passivate the positive active material layer and the negative active material layer. The metal ion (A) is selected from a non-lithium alkali metal ion, an alkaline earth metal ion or a combination thereof to prevent the thermal runaway from occurring.

Abstract: Methods and systems for forming structures including one or more layers comprising silicon germanium and one or more layers comprising silicon are disclosed. Exemplary methods can include using a surfactant, using particular precursors, and/or using a transition step to improve an interface between adjacent layers comprising silicon germanium and comprising silicon.

Abstract: A forming method of a component used in a plasma processing apparatus includes irradiating an energy beam to a source material of the component while supplying the source material based on a surface state of the component.