Patents Examined by Ken Horton
  • Patent number: 5429995
    Abstract: Disclosed is a method of manufacturing a semiconductor device, in which a silicon oxide film containing fluorine, said film exhibiting a low dielectric constant and a low hygroscopicity and acting as an insulating film for electrically isolating wirings included in a semiconductor device, is formed by a plasma CVD method using a source gas containing at least silicon, oxygen and fluorine, under the conditions that the relationship between the gas pressure P (Torr) and the ion energy E (eV) satisfies formula A given below:P.gtoreq.5.times.10.sup.-4,P.ltoreq.10.sup.-1 .times.10.sup.-E/45(A)and the relationship between the ion energy E (ev) and the plasma density D (/cm.sup.3) satisfies the formula B given below:D.gtoreq.2.times.10.sup.11 .times.10.sup.-E/45, 10.ltoreq.
    Type: Grant
    Filed: July 16, 1993
    Date of Patent: July 4, 1995
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yukio Nishiyama, Rempei Nakata, Nobuo Hayasaka, Haruo Okano, Riichirou Aoki, Takahito Nagamatsu, Akemi Satoh, Masao Toyosaki, Hitoshi Ito
  • Patent number: 5425843
    Abstract: A multi-layer structure, typically semiconductor device, is etched according to a process of the present invention, and meets the above-described existing needs by focusing on the post-etch treatment of the damaged, etched semiconductor device formed thereby. This post-etch treatment is accomplished by exposing the damaged silicon to a forming-gas downstream plasma which results in substantially increased oxide regrowth and significantly higher level of gate oxide quality. In conducting the process of the subject invention from about 1% up to about 15% by volume of H.sub.2, and from about 85 up to about 99% by volume of N.sub.2 are preferably employed as the post etching forming-gas plasma.
    Type: Grant
    Filed: October 15, 1993
    Date of Patent: June 20, 1995
    Assignee: Hewlett-Packard Corporation
    Inventors: Kenneth D. Saul, Valerie A. Bach
  • Patent number: 5424246
    Abstract: According to this invention, there is provided a method of forming a groove wiring layer, including the steps of forming a metal oxide film, consisting of a metal oxide having a decrease in standard free energy smaller than a decrease in standard free energy of a hydrogen oxide or of a carbon oxide, on an insulating film formed on a semiconductor substrate, and reducing the metal oxide film to form an electrode-wiring layer consisting of a metal which is a main component constituting the metal oxide. In this manner, an electrode-wiring layer having high EM and SM resistances without causing an increase in electric resistivity caused by an impurity or the like can be obtained.
    Type: Grant
    Filed: July 30, 1993
    Date of Patent: June 13, 1995
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Mie Matsuo, Haruo Okano, Nobuo Hayasaka, Kyoichi Suguro, Hideshi Miyajima, Jun-ichi Wada
  • Patent number: 5422307
    Abstract: A semiconductor device having a high productivity, a low resistance ohmic electrode, a high integration density, a low deterioration of a characteristic of each component and a high yield is provided. The ohmic contact of the semiconductor device has a structure of an AuGe/Ni alloy layer (27), a WSi layer (18c) and an Au layer (17d) sequentially laminated on a GaAs substrate (1). The flatness of the electrode is maintained by the WSi layer (18c) and the reduction of a resistance of the electrode is attained by the Au layer (17d ).
    Type: Grant
    Filed: March 1, 1993
    Date of Patent: June 6, 1995
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventor: Gaku Ishii
  • Patent number: 5418185
    Abstract: A Schottky diode circuit 20 is formed on a semiconductor layer 24. A conductive contact 36 on the surface of the semiconductor layer 24 forms a Schottky barrier 40 at the junction of the conductive contact 36 and the semiconductor layer 24. A guard ring 26 in the semiconductor layer 24 is adjacent to the Schottky barrier 40 and is separated from the conductive contact 36 by a portion of the semiconductor layer 24. No direct electrical path exists between the guard ring 26 and the conductive contact 36.
    Type: Grant
    Filed: January 21, 1993
    Date of Patent: May 23, 1995
    Assignee: Texas Instruments Incorporated
    Inventors: James R. Todd, Joe R. Trogolo, Andrew Marshall, Eric G. Soenen
  • Patent number: 5413952
    Abstract: A method for forming a direct wafer bonded structure having a buried high temperature metal nitride layer (16) and improved thermal conductivity is provided. By patterning the high temperature metal nitride layer (16) with a non-oxidizing photoresist stripper and absent a photoresist hardening step, adhesion between the high temperature metal nitride layer (16) and a dielectric layer (17, 27) subsequently formed over the high temperature metal nitride layer (16) is significantly improved. The dielectric layer (17, 27) will adhere to the high temperature metal nitride layer (16) in high temperature environments. In addition, a direct wafer bonded structure having a buried high temperature metal nitride layer (16) and improved thermal conductivity is provided. The structure is suitable for power, logic, and high frequency integrated circuit devices.
    Type: Grant
    Filed: February 2, 1994
    Date of Patent: May 9, 1995
    Assignee: Motorola, Inc.
    Inventors: Irenee Pages, Francesco D'Aragona, James A. Sellers, Raymond C. Wells
  • Patent number: 5413959
    Abstract: In a method of modifying a transparent conductive oxide film and in a method of manufacturing a photovoltaic device, a transparent conductive oxide film is irradiated with an energy beam for increasing the carrier concentration and thereby reducing the resistance of the transparent conductive oxide film.
    Type: Grant
    Filed: September 10, 1993
    Date of Patent: May 9, 1995
    Assignee: Sayno Electric Co., Ltd.
    Inventors: Yasuaki Yamamoto, Hiroshi Hosokawa, Wataru Shinohara, Seiichi Kiyama
  • Patent number: 5409683
    Abstract: A two-step hydrolysis-condensation method was developed to form metal oxide aerogels of any density, including densities of less than 0.003g/cm.sup.3 and greater than 0.27g/cm.sup.3. High purity metal alkoxide is reacted with water, alcohol solvent, and an additive to form a partially condensed metal intermediate. All solvent and reaction-generated alcohol is removed, and the intermediate is diluted with a nonalcoholic solvent. The intermediate can be stored for future use to make aerogels of any density. The aerogels are formed by reacting the intermediate with water, nonalcoholic solvent, and a catalyst, and extracting the nonalcoholic solvent directly. The resulting monolithic aerogels are hydrophobic and stable under atmospheric conditions, and exhibit good optical transparency, high clarity, and homogeneity. The aerogels have high thermal insulation capacity, high porosity, mechanical strength and stability, and require shorter gelation times than aerogels formed by conventional methods.
    Type: Grant
    Filed: July 7, 1994
    Date of Patent: April 25, 1995
    Assignee: Regents of the University of California
    Inventors: Thomas M. Tillotson, John F. Poco, Lawrence W. Hrubesh, Ian M. Thomas
  • Patent number: 5407868
    Abstract: A method for selectively etching a semiconductor wafer in the presence of an electrochemical etchant wherein the electrical potential of the area that is selectively etched is automatically changed to a potential at which the etching is inhibited once the desired etching in the area is completed. The method is described with respect to making an electrode tip for a tunnel current sensing device.
    Type: Grant
    Filed: December 8, 1992
    Date of Patent: April 18, 1995
    Assignee: AlliedSignal Inc.
    Inventors: Rex B. Peters, James R. Woodruff
  • Patent number: 5405592
    Abstract: A silicon-nitride beta-phase material including a non-densified structure of beta silicon nitride crystals having appreciable strength without any significant amount of liquid forming agents is made by comminuting a slurry including a mixture of silicon powder and water to form non-oxidized surfaces on the silicon powder and to allow chemical reaction between the silicon and the water, reducing the water content of the reacted slurry to a degree sufficient to form a resultant dry mass, nitriding the dry mass by exposure to a nitriding gas including at least nitrogen to form a mass of alpha-phase silicon nitride, and converting the resultant silicon nitride mass at a conversion temperature of from about 1450.degree. C. to about 2100.degree. C. to convert the silicon nitride from an alpha-phase material to a non-densified beta phase silicon nitride material.
    Type: Grant
    Filed: October 20, 1992
    Date of Patent: April 11, 1995
    Assignee: Eaton Corporation
    Inventors: James P. Edler, Bohdan Lisowsky
  • Patent number: 5403406
    Abstract: A silicon wafer containing oxygen precipitate nucleation centers (or oxygen precipitates) and having a first face, a second face, and a central plane equidistant between the first and second faces. The nucleation centers (or oxygen precipitates) have a non-uniform distribution between the first and second faces with a maximum density of the nucleation centers (or oxygen precipitates) being in a region which is between the first face and the central plane and nearer to the first face than the central plane. The density of the nucleation centers (or oxygen precipitates) increases from the first face to the region of maximum density and decreasing from the region of maximum density to the central plane.
    Type: Grant
    Filed: May 13, 1993
    Date of Patent: April 4, 1995
    Assignee: MEMC Electronic Materials, SpA
    Inventors: Robert Falster, Giancarlo Ferrero, Graham Fisher, Massimiliano Olmo, Marco Pagani
  • Patent number: 5403780
    Abstract: Void-free planarization of sub-micron and deep sub-micron semiconductor devices results from depositing a layer of silicon-enriched oxide over a conventionally fabricated device and its metal traces. Conventional layers of TEOS-based oxide and SOG are then applied over the layer of silicon-enriched oxide. The silicon-enriched oxide has an index of refraction of at least about 1.50, a dangling bond density of about 10.sup.17 /cm.sup.3, and is typically about 1,000 .ANG. to 2,000 .ANG. thick. Because it is relatively deficient in oxygen atoms, the silicon-enriched oxide releases relatively few oxygen atoms when exposed by the etching process and does not greatly accelerate the SOG etch rate. Further, the silicon-enriched oxide itself has an etch rate that is only about 75% that of stoichiometric TEOS-based oxide. As such, the silicon-enriched oxide acts as a buffer that slows the etch-back process as the etching approaches the level of the metal traces, thus protecting the metal traces against exposure.
    Type: Grant
    Filed: June 4, 1993
    Date of Patent: April 4, 1995
    Inventors: Vivek Jain, Milind G. Weiling, Dipankar Pramanik
  • Patent number: 5403570
    Abstract: Uniquely dispersible precipitated silica particulates, e.g., beads, powders and granulates/extrudates, very well suited for the reinforcement of elastomer/rubber matrices, e.g., tires for the automotive industry, have characteristic particle sizes, BET and CTAB specific surface areas, DOP oil absorption values, total pore volumes and pore size distributions, and reduced degree of attrition.
    Type: Grant
    Filed: June 26, 1992
    Date of Patent: April 4, 1995
    Assignee: Rhone-Poulenc Chimie
    Inventors: Yvonick Chevallier, Michel Rabeyrin
  • Patent number: 5401481
    Abstract: The present disclosure relates to improved processes for treating acid gases to remove acid gas components therefrom. Processes in accordance with the present invention include preparing a calcium silicate hydrate sorbent in the form of a semi-dry, free-flowing powder, and treating the gas with the powdery sorbent, such as by injecting the sorbent into a stream of the gas. The powdery sorbents may be prepared by slurrying/drying or pressure hydration techniques. Examples disclosed herein demonstrate the utility of these processes in achieving improved acid gas-absorbing capabilities in both lab-scale and pilot plant studies. Additionally, disclosure is provided which illustrates preferred plant design configurations for employing the present processes using conventional dry sorbent injection equipment. Retrofit application to existing plants is also addressed.
    Type: Grant
    Filed: March 15, 1993
    Date of Patent: March 28, 1995
    Assignee: Board of Regents, The University of Texas System
    Inventors: Gary T. Rochelle, Claus Jorgensen, John C. S. Chang, Theodore G. Brna, Charles B. Sedman, Wojciech Jozewicz
  • Patent number: 5401482
    Abstract: The invention relates to talc substances consisting of particles having a sheet structure. These substances are characterised in that each particle has internally the crystalline structure of talc which confers upon it certain specific properties of this mineral (softness, thermal stability) and has hydrophilic surface properties unlike the hydrophobic properties of mineral talc which give rise to useful reactivity. The substances according to the invention have a thermal and chemical stability range similar to that of talc. They can be manufactured by thermal or chemical means under conditions designed to avoid internal conversion of the talc and to effect the surface modifications consisting of replacing inert siloxane bridges by active hydrophilic groups.
    Type: Grant
    Filed: March 31, 1993
    Date of Patent: March 28, 1995
    Assignee: Talc de Luzenac (Societe Anonyme)
    Inventors: Clauss: Frederic, Richard Baeza, Yves Pietrasanta, Alain Rousseau
  • Patent number: 5397742
    Abstract: A method for forming a tungsten plug for wiring metal comprises the steps of: forming a first Ti film and a TiN film on the entire surface of an insulating film at respective thickness, in due order, the insulating film having been etched to form a contact hole therein; forming a TiSi.sub.2 film over the TiN film; forming a blanket tungsten film over the TiSi film; applying etch back to the tungsten film, to form a tungsten plug in the contact hole, the TiSi.sub.2 film being partially covered with tungsten residues and partially exposed; and etching the TiSi.sub.2 film with a solution having different chemical etching powers to the TiSi.sub.2 film and the TiN film, the tungsten residues being removed as the TiSi.sub.2 film is etched. The method is capable of completely removing the tungsten residues which are formed when the blanket tungsten film is subjected to etch back to form the plug for metal wiring and thus, capable of preventing the damage of the plug tungsten and the TiN film.
    Type: Grant
    Filed: April 15, 1994
    Date of Patent: March 14, 1995
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventor: Choon H. Kim
  • Patent number: 5395605
    Abstract: Novel precipitated silica particulates having low water uptake and high BET and CTAB surfaces, well adapted as reinforcing fillers for, e.g., the silicones, are conveniently prepared by heat treating certain starting material precipitated silica particulates at a temperature of at least 700.degree. C., for at least one minute.
    Type: Grant
    Filed: May 3, 1991
    Date of Patent: March 7, 1995
    Assignee: Rhone-Poulenc Chimie
    Inventors: Jacques Billion, Yvonick Chevallier, Jean-Claude Morawski
  • Patent number: 5389353
    Abstract: In a fluidized bed process for chlorinating rirnium-containing material, an improvement is disclosed comprising utilizing in the process calcined petroleum shot coke, calcined petroleum fluid coke or mixtures thereof. The improved process is capable of (a) decreasing the amount of fine particulate coke that is entrained in the hot gases exiting the fluidized bed reactor, and (b) more completely reacting the coke.
    Type: Grant
    Filed: February 1, 1994
    Date of Patent: February 14, 1995
    Assignee: E. I. Du Pont de Nemours and Company
    Inventors: Hans H. Glaeser, Mark J. Spoon
  • Patent number: 5389581
    Abstract: A method of forming a device and the device itself that utilizes a high density plasma-enhanced TEOS-based intermetal dielectric is disclosed. The high density is accomplished though the use of higher RF power and higher oxygen flow rate so that the TEOS is more completely oxidized. The higher density intermetal dielectric absorbs water from air slower than a standard intermetal dielectric film. This lower water absorbance reduces the amount of water in the device and reduces hot electron induced device degradation.
    Type: Grant
    Filed: May 25, 1993
    Date of Patent: February 14, 1995
    Assignee: Intel Corporation
    Inventors: Philip Freiberger, Ragupathy V. Giridhar, Brett Huff, Farhad K. Moghadam
  • Patent number: 5387557
    Abstract: A wafer(s) for producing semiconductor devices is subjected to heat treatment in a vertical thermal reactor, which is provided with an electric heating means setting a first temperature and another electric heating means setting a second temperature higher than the first temperature. The wafer(s) is moved upwards and is subected to a treatment in the second region of the vertical thermal reactor; and, is reverted to the first region. Rapid thermal processing of 6 or 8 inch wafer(s) is possbile without causing slip lines.
    Type: Grant
    Filed: October 22, 1992
    Date of Patent: February 7, 1995
    Assignee: F. T. L. Co., Ltd.
    Inventor: Mikio Takagi