Abstract: Disclosed herein is a semiconductor integrated circuit device including a standard cell with a fin extending in a first direction. The fin and a gate line extending in a second direction perpendicular to the first direction and provided on the fin constitute an active transistor. The fin and a dummy gate line provided in parallel with the gate line constitute a dummy transistor. The active transistor shares a node as its source or drain with the dummy transistor.

Abstract: A light emitting device includes: a substrate; a first electrode and a second electrode on the substrate and spaced apart from each other; a light emitting diode between the first electrode and the second electrode and connected to the first and second electrodes; a first contact on the first electrode; and a second contact on the second electrode. The first contact contacts the first electrode and a first portion of the light emitting diode, and the second contact contacts the second electrode and a second portion of the light emitting diode.

Abstract: A stacked via structure disposed on a conductive pillar of a semiconductor die is provided. The stacked via structure includes a first dielectric layer, a first conductive via, a first redistribution wiring, a second dielectric layer, a second conductive via, and a second redistribution wiring. The first dielectric layer covers the semiconductor die. The first conductive via is embedded in the first dielectric layer and electrically connected to the conductive pillar. The first redistribution wiring covers the first conductive via and the first dielectric layer. The second dielectric layer covers the first dielectric layer and the first redistribution wiring. The second conductive via is embedded in the second dielectric layer and landed on the first redistribution wiring. The second redistribution wiring covers the second conductive via and the second dielectric layer. A lateral dimension of the first conductive via is greater than a lateral dimension of the second conductive via.

Abstract: A capacitive trans-impedance amplifier comprising a voltage amplifier having an inverting input terminal for connection to an input current source. A feed-back capacitor is coupled between the inverting input terminal and the output terminal to accumulate charges received from the input current source and to generate a feed-back voltage accordingly. A calibration unit includes a calibration capacitor electrically coupled, via a calibration switch, to the inverting input terminal and electrically coupled to the feed-back capacitor. The calibration unit is operable to switch the calibration switch to a calibration state permitting a discharge of a quantity of charge from the calibration capacitor to the feed-back capacitor.

Abstract: Microelectronic assemblies fabricated using hybrid manufacturing, as well as related devices and methods, are disclosed herein. As used herein, “hybrid manufacturing” refers to fabricating a microelectronic assembly by arranging together at least two IC structures fabricated by different manufacturers, using different materials, or different manufacturing techniques. For example, a microelectronic assembly may include a first IC structure that includes first interconnects and a second IC structure that includes second interconnects, where at least some of the first and second interconnects may include a liner and an electrically conductive fill material, and where a material composition of the liner/electrically conductive fill material of the first interconnects may be different from a material composition of the liner/electrically conductive fill material of the second interconnects.

Abstract: A light emitting device includes: a package in which a recess is defined; a light emitting element mounted on a bottom surface defining the recess; a first reflecting layer covering lateral surfaces defining the recess; and a second reflecting layer covering the bottom surface defining the recess, wherein the second reflecting layer is in contact with the first reflecting layer, wherein at least a portion of lateral surfaces of the light emitting element is exposed from the second reflecting layer.

Abstract: In a soldering structure, a power module having the same, and a method for manufacturing the power module configured for constantly determining a height of a power module when the power module is manufactured, the soldering structure may include a soldering target portion; a metal layer including a bonding surface having a bonding region in which the soldering target portion is bonded by solder; and at least one wire located in the solder within the bonding region.

Abstract: Methods and systems are provided for controlling rail-voltages for amplifier output stages. In some examples, a method may include receiving sets of data values (e.g., at a power-supply control circuitry) for control of a rail voltage of an amplifier output stage. The method may also include determining that the receipt of a pending set of data values has been interrupted. Then, upon the determination that the receipt of the pending plurality of data values has been interrupted, the method may include decreasing the rail voltage to a non-boosted rail-voltage level.

Abstract: Electronic packages and modules are described. In an embodiment, a hybrid thermal interface material including materials with different thermal conductivities is used to attach a lid to a device. In an embodiment, a low temperature solder material is included as part of an adhesion layer for attachment with a stiffener structure.

Abstract: A method for forming a connection between two connection partners includes: forming a pre-connection layer on a first surface of a first connection partner, the pre-connection layer including a certain amount of liquid; performing a pre-connection process, thereby removing liquid from the pre-connection layer; performing photometric measurements while performing the pre-connection process, wherein performing the photometric measurements includes determining at least one photometric parameter of the pre-connection layer, wherein the at least one photometric parameter changes depending on the fluid content of the pre-connection layer; and constantly evaluating the at least one photometric parameter, wherein the pre-connection process is terminated when the at least one photometric parameter is detected to be within a desired range.

Abstract: A class AB buffer includes an output stage and an input stage. The output stage includes a first output transistor and a second output transistor. The second output transistor is coupled to the first output transistor. The input stage is coupled to the output stage. The input stage includes a first cascode transistor, a first switch, a second cascode transistor, and a second switch. The first switch is coupled to the first cascode transistor and the first output transistor. The second switch is coupled to the first switch, the second cascode transistor, and the first output transistor.

Abstract: An electronic device has a plurality of integrated circuits fixed to a support between transmitting and receiving antennas. An integrated circuit generates a synchronization signal supplied to the other integrated circuits. Each integrated circuit is formed in a die integrating electronic components and overlaid by a connection region according to the Flip-Chip Ball-Grid-array or embedded Wafer Level BGA. A plurality of solder balls for each integrated circuit is electrically coupled to the electronic components and bonded between the respective integrated circuit and the support. The solder balls are arranged in an array, aligned along a plurality of lines parallel to a direction, wherein the plurality of lines comprises an empty line along which no solder balls are present. A conductive synchronization path is formed on the support and extends along the empty line of at least one integrated circuit, between the solder balls of the latter.

Abstract: A method includes encapsulating a device in an encapsulating material, planarizing the encapsulating material and the device, and forming a conductive feature over the encapsulating material and the device. The formation of the conductive feature includes depositing a first conductive material to from a first seed layer, depositing a second conductive material different from the first conductive material over the first seed layer to form a second seed layer, plating a metal region over the second seed layer, performing a first etching on the second seed layer, performing a second etching on the first seed layer, and after the first seed layer is etched, performing a third etching on the second seed layer and the metal region.

Abstract: A piecewise linear gain amplifier circuit includes a differential preamplifier and a plurality of transconductors. The differential preamplifier is electrically coupled to a differential input having an input voltage. The transconductors are electrically coupled in parallel with each other. Each transconductor includes a respective differential input that is electrically coupled to a differential output of the differential preamplifier. In addition, each transconductor includes a respective differential output that is electrically coupled to a common differential PWL output. Each transconductor has a different linear input range. An optional attenuation circuit can be electrically coupled in parallel to the differential preamplifier. The differential output of the attenuation circuit can be electrically coupled to a differential input of another transconductor, and that transconductor can have a differential output that is electrically coupled to the common differential PWL output.

Abstract: An amplifier circuit is capable of switching between a unipolar output voltage domain and a bipolar output voltage domain. The amplifier circuit comprises an operational amplifier with a feedback circuit that is configurable using switches. By controlling the switches, the amplifier's feedback circuit can switched between two different arrangements having a positive and a negative signal gain, respectively. The amplifier circuit is designed such that the noise gain is the same in both operating modes, allowing a single noise compensation approach to be used for both operating modes. Since configurability of the circuit is achieved using static switches, the amplifier circuit maintains high accuracy and experiences no appreciable impact on power consumption as a result of implementing the switching.

Abstract: An amplifier circuit includes a multistage amplifier, a first feedback circuit and a second feedback circuit. The multistage amplifier includes a first-staged amplifier, a last-staged amplifier and at least one middle-staged amplifier cascaded between the first-staged amplifier and the last-staged amplifier. The first feedback circuit is configured to couple a positive output end of the last-staged amplifier to a positive input end of the at least one middle-staged amplifier, or is configured to couple a negative output end of the last-staged amplifier to a negative input end of the at least one middle-staged amplifier. The second feedback circuit is configured to couple the positive output end of the last-staged amplifier to a positive input end of the last-staged amplifier, or is configured to couple the negative output end of the last-staged amplifier to a negative input end of the last-staged amplifier.

Abstract: The present disclosure provides a wafer-level chip scale packaging structure and a method for manufacturing the same. The method includes the following steps: 1) providing a first supporting substrate; 2) placing a first chip on the first supporting substrate, and forming a first packaging layer on the first chip; 3) separating the first chip and the surface of the first packaging layer in contact with the first chip from the first supporting substrate, and attaching the other surface of the first packaging layer to a second supporting substrate; 4) disposing a second packaging layer on the surface of the first packaging layer which is in contact with the first chip; 5) forming a rewiring layer on the second packing layer, the rewiring layer is electrically connected to the first chip; and 6) electrically connecting a second chip to the rewiring layer.

Abstract: A semiconductor device and an electronic system, the device including a substrate including a cell array region and a connection region; a stack including electrodes vertically stacked on the substrate; a source conductive pattern on the cell array region and between the substrate and the stack; a dummy insulating pattern on the connection region and between the substrate and the stack; a conductive support pattern between the stack and the source conductive pattern and between the stack and the dummy insulating pattern; a plurality of first vertical structures on the cell array region and penetrating the electrode structure, the conductive support pattern, and the source structure; and a plurality of second vertical structures on the connection region and penetrating the electrode structure, the conductive support pattern, and the dummy insulating pattern.

Abstract: A device includes a first amplifier and a second amplifier. The first amplifier includes an inverting input configured to be coupled to a feedback node of an output of a power converter, a first non-inverting input configured to couple to a first voltage node, a second non-inverting input, and an output. The second amplifier includes an inverting input coupled to the output of the first amplifier, a non-inverting input coupled to a second voltage node, and an output. The device also includes a first transistor coupled to the output of the first amplifier and having a control terminal coupled to the output of the second amplifier, a capacitor coupled to a ground node and to the second non-inverting input of the first amplifier, and a current node coupled to the capacitor.

Abstract: Apparatus and methods for a low-load-modulation power amplifier are described. Low-load-modulation power amplifiers can include multiple amplifiers connected in parallel to amplify a signal that has been divided into parallel circuit branches. One of the amplifiers can operate as a main amplifier in a first amplification class and the remaining amplifiers can operate as peaking amplifiers in a second amplification class. The main amplifier can see low modulation of its load between the power amplifier's fully-on and fully backed-off states. Improvements in bandwidth and drain efficiency over conventional Doherty amplifiers are obtained.