Abstract: A semiconductor component that includes a photosensitive doped semiconductor layer, in which electrical charge carriers are released during absorption of electromagnetic radiation is disclosed. The photosensitive semiconductor layer has a structured interface and at least one layer which generates an electric field for separating the released charge carriers disposed downstream of the structured interface. The electric field extends over the structured interface. The photosensitive semiconductor component is distinguished by a high efficiency of the charge carrier separation, in particular, for generating an electric current.

Abstract: While embedded silicon germanium alloy and silicon carbon alloy provide many useful applications, especially for enhancing the mobility of MOSFETs through stress engineering, formation of alloyed silicide on these surfaces degrades device performance. The present invention provides structures and methods for providing unalloyed silicide on such silicon alloy surfaces placed on semiconductor substrates. This enables the formation of low resistance contacts for both mobility enhanced PFETs with embedded SiGe and mobility enhanced NFETs with embedded Si:C on the same semiconductor substrate. Furthermore, this invention provides methods for thick epitaxial silicon alloy, especially thick epitaxial Si:C alloy, above the level of the gate dielectric to increase the stress on the channel on the transistor devices.

Abstract: A probe having a sufficient height is manufactured by selectively depositing, over the main surface of a wafer, a copper film in a region in which a metal film is to be formed and a region which will be outside an adhesion ring when a probe card is fabricated; forming the metal film, polyimide film, interconnect, another polyimide film, another interconnect and a further polyimide film; and then removing the wafer and copper film. According to the present invention, when probe testing is performed using a prober (thin film probe) having the probe formed in the above-described manner while utilizing the manufacturing technology of semiconductor integrated circuit devices, it is possible to prevent breakage of the prober and a wafer to be tested.

Abstract: An amplifier is provided using digital potentiometer integrated circuits to control the tone of a vacuum tube preamplifier allowing digital control of the analog signal path of the amplifier. Using digital potentiometer integrated circuits to control the tone of a vacuum tube preamplifier results in an amplifier that preserves the unique tone quality of a vacuum tube amplifier that offers the flexibility, versatility, and user-friendly features of a digitally controlled amplifier, such as the ability to save and recall amplifier settings. The amplifier of the present invention is especially applicable for use with musical instruments such as for example, electric guitars.

Abstract: A method for increasing ring tone volume is provided. The method includes steps of: reading an audio file which is set as a current ring tone; determining whether the ring tone is a MP3 audio file or a musical instrument digital interface (MIDI) audio file; adjusting frequencies by using an equalizer technique to increase volume of the ring tone if the ring tone is the MP3 audio file; adjusting a volume level of the ring tone to be the highest volume level, and adjusting timbre of the ring tone to increase the ring tone volume by simulating a musical score of the ring tone by using different instruments if the ring tone is the MIDI audio file. A related system is also provided.

Abstract: A general purpose BGA security cap includes a substrate, an integrated circuit die, and an array of bond balls. The substrate includes an anti-tamper security mesh of conductors. The bond balls include outer bond balls and inner bond balls that are fixed to the underside of the substrate. The integrated circuit drives and monitors the anti-tamper security mesh and communicates data using a serial physical interface through a subset of the inner bond balls. In one example, a user has circuitry to be protected. The user purchases the BGA security cap and fits it over the circuitry to be protected such that the integrated circuit of the security cap communicates tamper detect condition information via the serial interface to the underlying protected circuitry and causes sensitive information to be erased or a program to be halted in the event of a tamper condition.

Abstract: A signal processing apparatus includes a plurality of equalizers configured to input an audio signal of a corresponding channel among audio signals of a plurality of channels and configured to perform at least gain adjustment on the basis of a set parameter, each of the equalizers being provided in such a manner as to correspond to an audio signal of one of the plurality of channels; a plurality of output sections configured to output each audio signal for each of the plurality of channels, the audio signal being processed by the equalizer; a measurement section configured to measure frequency-amplitude characteristics of the audio signal output from the output section; and a computation section configured to perform a computation process for correcting frequency-amplitude characteristics of an audio signal of each channel on the basis of the measurement result by the measurement section.

Abstract: An apparatus and associated method are provided. A first silicon layer having at least one of an associated passivation layer and barrier is included. Also included is a composite anti-reflection layer including a stack of layers each with a different thickness and refractive index. Such composite anti-reflection layer is disposed adjacent to the first silicon layer.

Abstract: Patterning an organic light emitting diode (OLED) after it has been encapsulated by permanently changing the light emissivity of the diodes. The OLED includes an intervening layer between a source of laser treatment and a light emitting layer. Depending on the composition of the light emitting layer, the laser treatment will enhance or diminish brightness.

Abstract: A semiconductor component has a substrate and a projecting electrode on the substrate. The projecting electrode is configured suitably for electrically and mechanically connecting the semiconductor component to an external substrate. Furthermore, the projecting electrode is formed by a one-dimensional or two-dimensional array of projecting sub-electrodes, which are separated from each other by an electrically insulating fluid beginning from a substrate surface. The semiconductor component has an improved projecting-electrode. It provides the projecting electrode with a sub-structure, which achieves sufficient flexibility without introducing much constructive complexity and processing complexity during fabrication.

Abstract: This patent pertains to a new technique of increasing the amount of energy absorbed by an antenna. It accomplishes this by broadcasting a spike that attracts the signal when the fields of its oscillating charge are at their strongest.

Abstract: The present invention provides for methods and systems for digitally processing an audio signal. Specifically, the present invention provides for a headliner speaker system that is configured to digitally process an audio signal in a manner such that studio-quality sound that can be reproduced.

Abstract: An sound reproducing apparatus is configured such that a correction amount is calculated on the basis of a masking model, determiner for determining a correction parameter correcting input signal so as to be natural for human ears to hear on the basis of the calculated correction amount is provided, and a characteristic of correction filter is changed on the basis of a result of determiner when inputting vehicle speed information.

Abstract: A bass and treble audio tone control circuit configured as an integrated circuit, wherein a capacitor for setting a frequency band can be accommodated in an integrated circuit. A LPF extracts a low sound region component SLO from an initial sound signal SIN. A low sound region adjustment circuit adjusts the gain of SLO and generates signal SLT. An inverting circuit inverts SLO and an adding circuit extracts a high sound region component SHO by adding the inverted SLO and SIN. A high sound region adjustment circuit adjusts the gain of SHO and generates a signal SHT. A synthesizing circuit synthesizes SIN with SHT and SLT, and generates an output sound signal SOUT. The LPF is composed of an RC active filter, and the resistance that establishes the cutoff frequency is composed of an equivalent resistance using a switched capacitor circuit.

Abstract: The invention provides an integrated circuit. The integrated circuit receives a first signal from a microphone via a first node. In one embodiment, the integrated circuit comprises a biasing circuit and a buffering circuit. The biasing circuit is coupled between the first node and a second node, drives the microphone with a first voltage source, and filters the first signal to generate a second signal at the second node. In one embodiment, the biasing circuit comprises a first resistor, a first capacitor, and a load element. The first resistor is coupled between the first voltage source and the first node. The first capacitor is coupled between the first node and the second node. The load element is coupled between the second node and a second voltage source. The buffering circuit is coupled between the second node and a third node and buffers the second signal to generate a third signal at the third node.

Abstract: A plurality of main amplifiers amplifies input audio signals with an adjustable gain. A first selector selects any of the input audio signals. An auxiliary amplifier receives an output of the first selector and amplifies this output with an adjustable gain. A second selector receives n outputs from the main amplifiers and selects any of the outputs. A soft switching circuit receives an output of the second selector at a first input terminal, receives an output of the auxiliary amplifier at a second input terminal, and makes the output transition gradually from one of the input terminals to the other of the input terminals. Output switches are respectively provided for the main amplifiers, an output of a corresponding main amplifier is received at a first input terminal, an output of the soft switching circuit is received at a second input terminal, and one of the outputs is selected to be outputted.

Abstract: A fuel cell system including: a fuel cell including a fuel gas channel and an oxidant gas channel, which is configured to generate electricity using a fuel gas and an oxidant gas; a diluting unit configured to dilute gas discharged from the fuel gas channel by mixing the discharged gas with a dilution gas which is supplied from an oxidant gas supply unit and passed through and discharged from the fuel cell, and to exhaust the diluted gas to outside; a purge valve configured to purge gas in the fuel gas channel to the diluting unit; a scavenging unit configured to scavenge the fuel gas channel and the oxidant gas channel; and a dilution assist unit configured to supply a dilution assist gas to the diluting unit through an assist passage connected to the diluting unit to assist dilution in the diluting unit, during scavenging by the scavenging unit.

Abstract: An audio adapter includes a first audio interface, a second audio interface, and two second amplifiers. The power pin of the second audio interface is connected to the non-inverting terminals of the two amplifiers. The left and right ear audio pins of the second audio interface are respectively connected to the inverting terminals of the first and the second amplifiers via two current-limiting resistors respectively. Two variable resistors are respectively connected between the inverting terminal and the output terminal of the two amplifiers. The output terminals of the two amplifiers are respectively connected to the left and right ear audio interface of the first audio interface and respectively connected to the ground pin of the first audio interface via two voltage-limiting resistors respectively.

Abstract: A ferroelectric layer (104) is sandwiched between a lower electrode layer (103) and an upper electrode (105). When a predetermined voltage (DC or pulse) is applied between the lower electrode layer (103) and the upper electrode (105) to change the resistance value of the ferroelectric layer (104) to switch a stable high resistance mode and low resistance mode, a memory operation is obtained. A read can easily be done by reading a current value when a predetermined voltage is applied to the upper electrode (105).

Abstract: A method of fabricating a semiconductor device, includes forming an amorphous silicon film above a semiconductor substrate, partially removing the amorphous silicon film and partially removing the semiconductor substrate, thereby forming an element isolation trench in a surface of the semiconductor substrate, forming an insulating film above the amorphous silicon film so that the element isolation trench is filled with the insulating film, polishing the insulating film by a chemical-mechanical polishing method with the amorphous silicon film serving as a stopper, thereby planarizing an upper surface of the insulating film, and thermally-treating the amorphous silicon film, thereby converting the amorphous silicon film to a polysilicon film after polishing the insulating film.