Abstract: A maintenance apparatus includes a case and a maintenance mechanism. The case includes an opening having a size corresponding to a second gate of a vacuum processing apparatus including a processing chamber having a first gate through which a substrate is loaded and unloaded and the second gate different from the first gate. The case is attachable to the second gate while maintaining airtightness. The maintenance mechanism is provided in the case and is configured to perform at least one of an operation of detaching a consumed part in the processing chamber through the opening, an operation of attaching a replacement part in the processing chamber and an operation of cleaning the processing chamber.

Abstract: The embodiments herein relate to methods and apparatus for etching features in semiconductor substrates. In a number of cases, the features may be etched while forming a spin-torque-transfer random access memory (STT-RAM) device. In various embodiments, the substrate may be cooled to a low temperature via a cooled substrate support during particular processing steps. The cooled substrate support may have beneficial impacts in terms of reducing the degree of diffusion-related damage in a resulting device. Further, the use of a non-cooled substrate support during certain other processing steps can likewise have beneficial impacts in terms of reducing diffusion-related damage, depending on the particular step. In some implementations, the cooled substrate support may be used in a process to preferentially deposit a material (in some cases a reactant) on certain portions of the substrate.

Abstract: An etching solution recycling system for a wafer etching apparatus is provided. The etching solution recycling system includes a settling tank, a seed provider, and a fluid control unit. The settling tank is connected to an etching tank of the wafer etching apparatus and configured to receive an etching solution from the etching tank. The seed provider is configured to provide at least one seed crystal into the settling tank to reduce the silicate concentration in the etching solution in the settling tank. The fluid control unit is configured to deliver the etching solution in the settling tank back into the etching tank.

Abstract: Disclosed is a rotary union including an inner shaft, wherein the inner shaft is rotatable and includes an internal channel operable to deliver a cryogenic fluid to a platen. The rotary union may further include a rotary union shaft surrounding the inner shaft, and a seal assembly coupled to the rotary union shaft. The seal assembly may include a support, a metal bellows extending around an exterior of the support, and a seal support coupled to the metal bellows, wherein the seal support extends around the support. The seal assembly may further include a non-rotating seal component seated in the seal support, and a rotating seal component in abutment with the non-rotating seal component to create a mechanical seal therebetween.

Abstract: Plasma strip tools with process uniformity control are provided. In one example implementation, a plasma processing apparatus includes a processing chamber, a first pedestal in the processing chamber operable to support a workpiece, and a second pedestal in the processing chamber operable to support another workpiece. The first pedestal can define a first processing station. The second pedestal can define a second processing station. The apparatus can further include a first plasma chamber disposed above the first processing station and a second plasma chamber disposed above the second processing station. The first plasma chamber can be associated with a first inductive plasma source. The first plasma chamber can be separated from the processing chamber by a first separation grid. The second plasma chamber can be associated with a second inductive plasma source. The second plasma chamber can be separated from the processing chamber by a second separation grid.

Abstract: An apparatus comprises a chamber configured to receive a medium. The chamber comprises a first cooled structure having a first surface and a second cooled structure having a first surface. The first surface of the first cooled structure faces the first surface of the second cooled structure and is positioned a predetermined distance therefrom to form a gap, and the gap is configured to receive the medium. The chamber further includes a first gas inlet positioned proximate the center of the first cooled structure, a first slidable structure configured to seal a first side of the chamber when in a closed position, and a second slidable structure, positioned opposite the first slidable structure, and configured to seal a second side of the chamber when in a closed position.