Patents Examined by L. Dewayne Rutledge
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Patent number: 4891183Abstract: A method of improving the elevated temperature oxidation resistance of non-iron base alloys, especially nickel and cobalt base alloys by the addition of dopants to the oxide scale formed on a broad range of non-iron base alloys such as wrought or cast nickel or cobalt base heat resistant alloys.Type: GrantFiled: December 3, 1986Date of Patent: January 2, 1990Assignee: Chrysler Motors CorporationInventor: John M. Corwin
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Patent number: 4891273Abstract: A multiple coated composite steel strip having an excellent corrosion (rust) resistance, weldability and paint adhesion, and thus useful for car bodies, comprises a steel strip substrate, a first metal coating layer, a second chlorate coating layer formed by an electrolytic chromate treatment method, containing 40 to 120 mg/m.sup.2 of chromium and having a content of Cr.sub.2 O.sub.3 of 45% by weight or more, and a third resinous coating layer comprising a homopolymer or copolymer of acrylic acid, methacrylic acid, acrylic acid ester or methacrylic acid ester and 15% to 40% of colloidal silica particles having a very small size of 1 to 12 m .mu.m.Type: GrantFiled: May 12, 1988Date of Patent: January 2, 1990Assignee: Nippon Steel CorporationInventors: Hisao Odashima, Yoshihiko Hirano, Teruyoshi Hiraoka
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Patent number: 4889776Abstract: The coated article includes a refractory metal substrate having an oxidation resistant intermetallic layer formed in situ thereon; e.g., a fused refractory metal silicide layer, and a ceramic layer applied on and adhering to the intermetallic layer to provide enhanced high temperature properties and improved resistance to premature catastrophic failure in high temperature oxidizing environments where dissimilar materials are present that may destructively react with the intermetallic layer.Type: GrantFiled: August 17, 1987Date of Patent: December 26, 1989Assignee: Barson CorporationInventor: Seymour Priceman
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Patent number: 4887492Abstract: Lead with a low alpha particle emission is produced by selecting an orebody wherein lead mineral is present in a coarsely disseminated form and substantially free of impurities. The ore is selected from a host rock that is relatively low in alpha emitters, such as a carbonate rock. The ore is mined and is milled such that the lead mineral can be separated from the host rock and any other minerals. The ground ore may be screened into one or more fractions having a narrow range of particle sizes. Each fraction is formed into a fluid suspension, and each suspension is subjected to gravity separation to remove the host rock and any other minerals which substantially contain the alpha particle-emitting substances, and to recover the lead mineral as a concentrate with a low alpha count. The lead concentrate is subjected to a suitable reduction operation that may include a conversion of the concentrate into a reducible form, without the introduction of alpha emitters, for the recovery of a low alpha lead.Type: GrantFiled: August 29, 1988Date of Patent: December 19, 1989Assignee: Cominco Electronic Materials Inc.Inventors: John A. Dunlop, Edward F. G. Milner, Robert W. Smyth, Gerald W. Toop
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Patent number: 4886547Abstract: The present invention provides a method of efficiently and stably manufacturing a high-purity metal powder of a desired particle size, which is used for powder metallurgy or the like, by generating arc 18 between electrodes 12 and 13 to melt the distal end portions of the electrodes, causing droplets 19 of the molten metal to drop onto rotating disk 14, scattering the dropped droplets by a centrifugal force, thereby cooling the droplets, and an apparatus for the same.Type: GrantFiled: May 16, 1988Date of Patent: December 12, 1989Assignee: Nippon Kokan Kabushiki KaishaInventors: Hideaki Mizukami, Kentaro Mori, Akichika Ozeki, Takaho Kawawa, Yuji Sugitani, Hirokazu Nomura, Tadashi Fujioka, Hirotaka Nakagawa
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Patent number: 4886641Abstract: A novel electrical contact spring material made of a copper base alloy is disclosed. This spring material has high strength and toughness, as well as good adhesion of solder. It also has reduced anisotropy in its characteristics in two directions, i.e., the working direction and the direction perpendicular to it. A very thin-walled member can be produced from this spring material since its anisotropy in characteristics is small and will not increase even if the amount of working is increased.The copper base alloy of which this spring material is made consists essentially of 2.2-5% Ti, 0.1-0.8% Co, 0.02-0.5% Cr, 0-0.6% of Ni and/or Fe, 0-0.5% of at least one of Ca, Mg, Zn, Cd, Li, Zr, Si, Mn, Sn and Al, and the balance being Cu and incidental impurities.Type: GrantFiled: April 20, 1988Date of Patent: December 12, 1989Assignee: Mitsubishi Kinzoku Kabushiki KaishaInventors: Takuro Iwamura, Masao Kobayashi
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Patent number: 4885032Abstract: Disclosed is a metal particle having a maximum dimension of not more than 1 mm surface-treated with an aqueous solution containing phosphate ions, soluble ions of vanadium and oxygen. This particle can be a metallic pigment having excellent brightness retention and wetting properties to a binder resin.Type: GrantFiled: August 31, 1987Date of Patent: December 5, 1989Assignee: Nippon Paint Co., Ltd.Inventors: Toshihiro Okai, Yoshiaki Okumura, Mitsuyuki Oda, Takashi Yamamoto, Teruaki Kuwajima
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Patent number: 4885214Abstract: A composite material has portions of a first material such as a metal or ceramic having coatings of a metal material thereon disposed in a metal matrix material and having a diffusion-bonds between the coating and matrix materials securing the portions of the first material at selected locations in the composite material.Type: GrantFiled: March 10, 1988Date of Patent: December 5, 1989Assignee: Texas Instruments IncorporatedInventors: George Trenkler, Richard G. Delagi
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Patent number: 4885043Abstract: A method for the selective decarburization of an iron based substrate, such as a silicon iron substrate, wherein the carbon present in the substrate is extracted by the selective deposition of a titanium nitride layer or film on the substrate.Type: GrantFiled: March 1, 1988Date of Patent: December 5, 1989Assignee: International Business Machines CorporationInventor: Mohammed Y. Al-Jaroudi
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Patent number: 4885213Abstract: A sprayed member which has a ceramic-sprayed layer formed on the surface of a parent material of an aluminum alloy through a sprayed bond layer. A diffusion layer occupies 20 to 50% of the entire interface between the bond layer and the parent material. The interface between the diffusion layer and the parent material and the interface between the bond layer and the parent material are finely roughened to have a height of several microns. The diffusion layer and the fine roughness are formed by preheating the surface of the parent material at a temperature ranging from 260.degree. to 500.degree. C. prior to spraying the parent material with a material for the bond layer so that they can together enhance the adherency between the bond layer and the parent material.Type: GrantFiled: April 28, 1988Date of Patent: December 5, 1989Assignee: Toyota Jidosha Kabushiki KaishaInventors: Noritaka Miyamoto, Miyuki Koujiya, Joji Miyake, Takashi Iomoda, Hidetoshi Ohsawa, Tetsuo Nagami
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Patent number: 4883721Abstract: A multi-layer of thin film for application to a transparent substrate such as glass provides excellent visible light transmission while controlling both near infra-red solar energy and far infra-red reflected energy. The film comprises a layer of sputtered zinc, tin, or bismuth oxide, a layer of sputtered silver or silver alloy, a layer of sputtered titanium or stainless steel and a final layer of zinc, tin, or bismuth oxide. The product exhibits a nominal visible light transmittance of 55% and a reflectance less than about 15% for incident light on the substrate (glass) side at visible light wavelengths and reflectance less than about 6% for incident light on the film side in the visible wavelengths. Emissivity is less than 0.15. A method of fabricating the product is also disclosed.Type: GrantFiled: July 24, 1987Date of Patent: November 28, 1989Assignee: Guardian Industries CorporationInventors: Raymond Nalepka, Russell Huffer
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Patent number: 4883640Abstract: A brazing alloy-filler metal for brazing parts made of TiAlNb alloys has a brazing temperature of about 1020.degree. to 1250.degree. C. and a composition of, in weight percent, 37-75 titanium, 5-43 niobium, 20-58 nickel.Type: GrantFiled: June 17, 1988Date of Patent: November 28, 1989Assignee: GTE Products CorporationInventor: Howard Mizuhara
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Patent number: 4883723Abstract: Continuously hot dip aluminum coated ferritic chromium alloy steel strip. After the steel has been given a pretreatment to remove surface contaminants, the steel is protected in a hydrogen atmosphere until it is passed into the molten aluminum coating metal. The coating metal readily wets the steel surface to prevent uncoated areas or pin holes in the coating layer.Type: GrantFiled: June 24, 1988Date of Patent: November 28, 1989Assignee: Armco Inc.Inventors: Farrell M. Kilbane, Richard A. Coleman, Frank C. Dunbar, Alan F. Gibson
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Patent number: 4881989Abstract: An Fe-base soft magnetic alloy having the composition represented by the general formula:(Fe.sub.1-a M.sub.a).sub.100-x-y-z-.alpha.-.beta.-.gamma. Cu.sub.x Si.sub.y B.sub.z M'.sub.60 M".sub..beta. X.sub..gamma.wherein M is Co and/or Ni, M' is at least one element selected from the group consisting of Nb, W, Ta, Zr, Hf, Ti and Mo, M" is at least one element selected from the group consisting of V, Cr, Mn, Al, elements in the platinum group, Sc, Y, rare earth elements, Au, Zn, Sn and Re, X is at least one element selected from the group consisting of C, Ge, P, Ga, Sb, In, Be and As, and a, x, y, z, .alpha., .beta. and .gamma. respectively satisfy 0.ltoreq.a.ltoreq.0.5, 0.1.ltoreq.x.ltoreq.3, 0.ltoreq.y.ltoreq.30, 0.ltoreq.z.ltoreq.25, 5.ltoreq.y+z.ltoreq.30, 0.1.ltoreq..alpha..ltoreq.30, .beta..ltoreq.10 and .gamma..ltoreq.10, at least 50% of the alloy structure being fine crystalline particles having an average particle size of 1000 .ANG. or less.Type: GrantFiled: October 1, 1987Date of Patent: November 21, 1989Assignee: Hitachi Metals, Ltd.Inventors: Yoshihito Yoshizawa, Kiyotaka Yamauchi, Shigeru Oguma
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Patent number: 4880482Abstract: A highly corrosion-resistant amorphous Cu alloys with at least one element selected from the group of Ta and Nb and other Cu-Ta alloys with at least one element selected from the group of Nb, Ti and Zr, wherein the total content of alloying elements other than Cu ranges from 15 to 85 at %.Type: GrantFiled: April 19, 1988Date of Patent: November 14, 1989Assignees: Mitsui Engineering & Shipbuilding Co., Ltd., Koji HashimotoInventors: Koji Hashimoto, Kimikado Miura, Katsuhiko Asami, Asahi Kawashima
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Patent number: 4877692Abstract: Alumina is bonded to a metal by means of an active brazing filler alloy. When the metal to which the alumina is bonded is a high blushing metal, that is, a metal on which the active brazing filler alloy readily flows on the surface, a thin layer of a low blushing metal is disposed therebetween.Type: GrantFiled: September 12, 1988Date of Patent: October 31, 1989Assignee: GTE Products CorporationInventors: Howard Mizuhara, Eugene Huebel
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Patent number: 4877577Abstract: A copper alloy material for lead frames for semiconductor devices. The lead frame material consists essentially of:Ni: 0.5-2 percent by weight;Sn: 1.2-2.5 percent by weight;Si: 0.05-0.5 percent by weight;Zn: 0.1-1 percent by weight;Ca: 0.001-0.01 percent by weight;Mg: 0.001-0.05 percent by weight;Pb: 0.001-0.01 percent by weight; andCu and inevitable impurities: the balance.The lead frame material obtained possesses not only high strength, but also excellent thermal-exfoliation resistance of the solder, and also enhances the wear resistance of the stamping dies, while possessing excellent other properties, such as repeated-bending strength, thermal conductivity and electrical conductivity, platability, and solderability, which are required of lead frames.Type: GrantFiled: October 12, 1988Date of Patent: October 31, 1989Assignee: Mitsubishi Shindoh Co., Ltd.Inventors: Rensei Futatsuka, Synu-ichi Chiba, Tadao Sakakibara
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Patent number: 4877689Abstract: A composite material suitable for providing insulation for the nozzle structure of the Space Shuttle and other similar surfaces is disclosed which comprises an outer skin layer of nickel chromium and an interleaved inner region comprising a top layer of nickel chromium foil which acts as a primary convective shield, at least two layers of alumina batting adjacent to layers of silicon carbide fabric, and an additional layer of nickel chromium foil to be used as a secondary convective shield. The composite is particularly advantageous for use as nozzle insulation because of its ability to withstand high reentry temperatures, its flexibility, oxidation resistance, low conductivity, and light weight.Type: GrantFiled: September 30, 1988Date of Patent: October 31, 1989Assignee: United States of America as represented by the Administrator, National Aeronautics and Space AdministrationInventor: Joseph W. Onstott
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Patent number: 4876065Abstract: Disclosed in an improvement in a known Ni-Cr-Fe alloy.The alloy of the invention contains 30 to 32% nickel; 26 to 28% chromium; 0.5 to 1.5% copper; 6 to 7% molybdenum; up to 2% manganese; up to 1.0% silicon; up to 0.2% aluminum; up to 0.03% carbon; 0.10 to 0.25% nitrogen; balance iron and usual impurities.The alloy of the invention has increased pitting corrosion potential and critical crevice corrosion and pitting corrosion temperatures whereas the resistance of the alloy to commercially pure phosphoric acid has not been decreased.Type: GrantFiled: May 19, 1988Date of Patent: October 24, 1989Assignee: VDM Nickel-Technologie AktiengesellschaftInventors: Manfred Rockel, Ernst Wallis, Michael Kohler, Ulrich Heubner, Rolf Kirchheiner
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Patent number: 4874438Abstract: An intermetallic compound semiconductor thin film comprises a single crystalline deposition thin film made of a III-V group intermetallic compound having a stoichiometry composition ratio of 1:1. When forming the III-V group semiconductor thin film by an evaporation method, a substrate temperature is initially maintained at a high level while the evaporation source temperature is gradually raised, and when the intermetallic composition of the III-V group begins to deposit on the substrate, the substrate temperature is lowered while the evaporation source temperature is maintained at the same level as existed at the time when the intermetallic compound is deposited, and the deposition time is controlled.Type: GrantFiled: November 30, 1987Date of Patent: October 17, 1989Assignee: Toyo Communication Equipment Co., Ltd.Inventors: Masahide Oshita, Masaaki Isai, Toshiaki Fukunaka