Patents Examined by Lori F. Cuomo
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Patent number: 4919904Abstract: Disclosed are primary sterically hindered aminoacids for use as promoters for alkali metal salts in acid gas scrubbing. The primary sterically hindered aminoacid is selected from 1-amino-cyclopentane carboxylic acid and those represented by the formula: ##STR1## where R.sub.1 and R.sub.2 are independently selected from CH.sub.3, C.sub.2 H.sub.5, and C.sub.3 H.sub.7 ; R.sub.3 and R.sub.4 are independently selected from hydrogen and CH.sub.3 ; and n is 0, 2, or 3.Type: GrantFiled: April 11, 1988Date of Patent: April 24, 1990Assignee: Exxon Research and Engineering CompanyInventors: Larry J. Shulik, Guido Sartori, W. S. Winston Ho, Warren Thaler, George E. Milliman
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Patent number: 4917875Abstract: An improved continuous cyclic process for removing oxides of sulfur from a waste gas with a regenerable particulate adsorbent in which hot adsorbent particles pick up SOx in a first fluid transport riser, followed by separation of clean gas from sulfur-contained particles which are then recycled to a desorber in which they are contacted at elevated temperature with a mixture of reducing gas and water vapor for release of sulfur as hydrogen sulfide. The adsorbent particles are then recycled in the process. Means are provided for removing particulates in the waste gas.Type: GrantFiled: June 29, 1988Date of Patent: April 17, 1990Assignee: Englehard CorporationInventors: Andrew S. Moore, David B. Bartholic, Dwight F. Barger, William J. Reagan
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Patent number: 4917866Abstract: A process for producing silicon carbide short fibers comprises oxidizing metallic silicon powder in an oxidizing gas atmosphere into silicon monoxide in the form of ultrafine particles or gas, and carbonizing said silicon monoxide in a reducing gas atmosphere containing carbon at temperatures being lower than temperatures for producing powder and falling in a temperature range for causing a heterogenous core formation of silicon carbide, thereby producing silicon carbide short fibers. The process of the present invention is capable of mass-producing silicon carbide short fibers continuously in a short time.Type: GrantFiled: November 10, 1988Date of Patent: April 17, 1990Assignee: Toyota Jidosha Kabushiki KaishaInventors: Susumu Abe, Tadayoshi Ikai, Masahiro Ogawa
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Patent number: 4917873Abstract: In order to clean gases containing noxious components by contacting the gases with a solid material layer adhering to carrier bodies, the solid material layer is applied to the carrier body by wetting with an impregnating solution and then drying the solution on the carrier bodies. After being used up by reaction with the gases to be cleaned, the solid material layer is removed from the carrier bodies, after which it can be replaced by wetting with impregnating solution and drying again. The carrier bodies are stationary and the impregnating solution is trickled over them. Once the carrier bodies are wetted, irrigation with the impregnation solution is interrupted and the solution is dried on the carrier bodies. When the gas reaction at the solid material layer thus formed weakens, the stationary carrier bodies are re-irrigated with impregnation solution and dried. After many repeated impregnations the solid material layer is washed away by flushing or flooding the carrier bodies with a wash solution.Type: GrantFiled: July 6, 1988Date of Patent: April 17, 1990Assignee: Kernforschungsanlage Julich Gesellschaft mit beschrankter HaftungInventors: Peter Filss, Wolfgang Heidrich
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Patent number: 4915924Abstract: A method of producing whiskers of silicon carbide and other materials. For the formation of silicon carbide, the method involves forming a first reaction zone containing microfine particles of silicon dioxide uniformly mixed with carbon or a carbon precursor, with the ratio of the silicon dioxide to the carbon present as a starting material or derivable from the precursor being greater than about 5 to 1 by weight. A closely adjacent second reaction zone is formed containing a porous fibrous mass of active carbon or an infusible carbon precursor. The reaction zones are heated under a non-oxidizing atmosphere to temperatures at which silicon monoxide is formed in the first reaction zone, diffuses to the second reaction zone and reacts with carbon derived from the carbon precursor in the second reaction zone to form silicon carbide whiskers.Type: GrantFiled: August 10, 1988Date of Patent: April 10, 1990Assignee: Alcan International LimitedInventors: Sadashiv K. Nadkarni, Mukesh K. Jain
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Patent number: 4915730Abstract: A process and apparatus for the recovery of metals such as silver from phosphate flue dust. The process includes the steps of blending chloride salt and the flue dust to produce a blended material, roasting the blended material in an oxygen bearing atmosphere to oxidize carbon in the blended material producing a gas and to react chloride salt with the metal in the blended material producing a water soluble metallic salt, dissolving the metallic salt in water to produce a solution, filtering the solution to remove solids, and precipitating metals from the filtered solution with the precipitate ready for conventional smelting. The preferred embodiment of the apparatus includes a flue dust hopper and mill and a salt hopper and mill for feeding the dust and salt to a radiant tube dryer and a radiant tube asher for blending and roasting the materials, and a spray chamber at the outlet of the asher for separating solids and gases, where certain of the solids go into solution.Type: GrantFiled: July 13, 1989Date of Patent: April 10, 1990Inventors: Allan Elias, Hans W. Rasmussen
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Patent number: 4915923Abstract: Disclosed is a filler for ink jet recording paper, said filler being composed of amorphous silica having a median diameter, measured by the coulter counter method, of 2 to 15 .mu.m, an oil absorption of at least 180 ml/100 g, a refractive index, measured by the solvent method, of at least 1.450, and a moisture absorption, measured when it is caused to absorb moisture for 200 hours at a relative humidity of 90% and a temperature of 25.degree. C., of at least 35%.Type: GrantFiled: June 9, 1988Date of Patent: April 10, 1990Assignee: Mizusawa Industrial Chemicals, Ltd.Inventors: Masahide Ogawa, Teiji Sato, Maso Takahashi, Toshio Kitsu, Seikichi Takahashi, Kinichi Ono
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Patent number: 4911903Abstract: Highly monodispersed nonporous spherical SiO.sub.2 particles are prepared having mean particle diameters between 0.05 and 10 .mu.m with a standard deviation of not more than 5% and a method for the preparation of such particles. The particles can be produced by a two step process wherein first a sol of primary particles is prepared by hydrolytic polycondensation of tetraalkoxysilanes in an aqueous/alcoholic ammoniacal medium. The SiO.sub.2 particles are then converted to the desired particle size by a continuous measured addition of tetraalkoxysilane or organotrialkoxysilane controlled by the extent of the reaction. The SiO.sub.2 particles produced by this process are particularly useful as sorption material in chromatography.Type: GrantFiled: July 12, 1988Date of Patent: March 27, 1990Assignee: Merck Patent Gesellschaft mit Beschrankter HaftungInventors: Klaus Unger, Herbert Giesche, Joachim Kinkel
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Patent number: 4908195Abstract: Disclosed is a process for the purification of an exhaust gas which contains dust and gaseous pollutants, such as SO.sub.2, SO.sub.3, HCl, HF and nitrogen oxides. In the process 70 to 90% of the total amount of sorbent required is introduced as a dry powder into the gas stream and the remaining 10 to 30% of the sorbent is introduced into the gas stream as a solution or suspension after a turbulence has been induced in the gas stream.Type: GrantFiled: April 3, 1989Date of Patent: March 13, 1990Assignee: Metallgesellschaft AktiengesellschaftInventors: Dieter Wanner, Horst Schade
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Patent number: 4904460Abstract: A process for producing monosilane, which comprises disproportionating an alkoxysilane of the formula:H.sub.n Si(OR).sub.4-n (I)wherein R is an alkyl group having from 1 to 6 carbon atoms or a cycloalkyl group and n is an integer of 1, 2 or 3, in the presence of a catalyst, wherein the catalyst comprises at least one compound selected from the group consisting of aromatic alkoxides of the formula:MOAr (II)wherein M is a metal of Group Ia of the Periodic Table and Ar is a substituted or unsubstituted aromatic hydrocarbon group, and quaternary ammonium and phosphonium compounds of the formula:R.sup.1 R.sup.2 R.sup.3 R.sup.4 ZX (III)wherein each of R.sup.1, R.sup.2, R.sup.3 and R.sup.4 which may be the same or different, is a substituted or unsubstituted alkyl or aryl group, Z is a nitrogen atom or a phosphorus atom and X is an anion.Type: GrantFiled: April 13, 1989Date of Patent: February 27, 1990Assignee: Mitsubishi Kasei CorporationInventors: Keisuke Wada, Junzo Haji, Ichiro Yokotake
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Patent number: 4902408Abstract: Hydrogen sulphide is removed using transition metal carboxylates.Type: GrantFiled: July 27, 1988Date of Patent: February 20, 1990Assignee: Bayer AktiengesellschaftInventors: Gunther Reichert, Christian Wegner
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Patent number: 4900411Abstract: Method and apparatus for the preparation of high-purity polycrystalline silicon deposited by thermal decomposition or hydrogen reduction of a gaseous halogenated silicon on high-purity silicon particles in a fluidized bed reactor heated by microwave.Type: GrantFiled: October 30, 1986Date of Patent: February 13, 1990Assignee: Korea Research Institute of Chemical TechnologyInventors: Yoon Poong, Song Yongmok
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Patent number: 4900532Abstract: An improved process for purifying and refining silicon containing impurities comprises:(i) continuously melting impure silicon to form a thin film silicon melt, preferably on an inclined surface of a silicon-resistant material,(ii) continuously treating the thin film silicon melt with a reactive gas with or without an inert gas,(iii) optionally degassing the treated silicon melt, and thereafter(iv) continuously crystallizing the treated silicon.Type: GrantFiled: August 9, 1988Date of Patent: February 13, 1990Assignee: Bayer AktiengesellschaftInventors: Gunter Kurz, Ingo Schwirtlich, Klaus Gebauer
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Patent number: 4897249Abstract: A filtered solution of barium hydroxide octahydrate reacted with an aqueous solution of boric acid to provide hydrated .gamma. barium borate having a barium to boron ratio of 1:2 and having fine particle size. The hydrated .gamma. barium borate was converted to the anhydrous .gamma. form at about 300.degree. to 400.degree. C. Further heating to about 600.degree. to 800.degree. C. converted the product to .beta.-BaB.sub.2 O.sub.4. The conversion to the .beta.-form is preferably during sintering of a ceramic dielectric composition to which the .gamma.-BaB.sub.2 O.sub.4 has been added as a flux.Type: GrantFiled: April 3, 1989Date of Patent: January 30, 1990Assignee: Sprague Electric CompanyInventors: Sidney D. Ross, Manuel Finkelstein
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Patent number: 4892694Abstract: Residual silicone from direct process manufacture of chlorosilanes is stabilized for transportation and disposal.Type: GrantFiled: January 13, 1989Date of Patent: January 9, 1990Assignee: General Electric CompanyInventors: Alan Ritzer, George P. Moloney, Jr., Jack C. Leunig
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Patent number: 4889703Abstract: A process is disclosed for producing tungstosilicic acid which involves adding sodium silicate to a first solution of sodium tungstate while assuring that the pH of the resulting mixture is from about 2 to about 6, the pH adjustments being made with a cation exchange resin on the hydrogen cycle, to produce a second solution. The solids are removed from the second solution which is digested at a temperature of greater than about 50.degree. C. and then contacted with a cation exchange resin on the hydrogen cycle to produce a third solution which is essentially a tungstosilicic acid solution containing at least about 99% by weight of the starting tungsten as tungstosilicic acid.Type: GrantFiled: June 16, 1989Date of Patent: December 26, 1989Assignee: GTE Products CorporationInventors: Kenneth T. Reilly, Alan D. Douglas, Henry E. Hoffman