Patents Examined by Mahmoud Dahimene
  • Patent number: 10811275
    Abstract: Bending of a hole or a groove formed in a multilayered film including silicon oxide films and silicon nitride films alternately stacked on top of each other is suppressed. A plasma etching method includes a first etching process of etching, by plasma, the multilayered film including the silicon oxide films and the silicon nitride films alternately stacked on top of each other; and a second etching process of etching, by plasma, the multilayered film under a processing condition that an inclination of a portion of an inner sidewall of the hole or the groove, which is formed by the etching of the multilayered film, corresponding to the silicon nitride film with respect to a depth direction of the hole or the groove is reduced.
    Type: Grant
    Filed: February 14, 2019
    Date of Patent: October 20, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Taku Gohira, Yuya Minoura
  • Patent number: 10800653
    Abstract: A manufacturing method of micro channel structure is disclosed and includes steps of: providing a substrate; depositing and etching to form a first insulation layer; depositing and etching to form a supporting layer; depositing and etching to form a valve layer; depositing and etching to form a second insulation layer; depositing and etching to form a vibration layer, a lower electrode layer and a piezoelectric actuating layer; providing a photoresist layer and depositing and etching to form a plurality of bonding pads; depositing and etching to from a mask layer; etching to form a first chamber; and etching to form a second chamber.
    Type: Grant
    Filed: October 23, 2019
    Date of Patent: October 13, 2020
    Assignee: MICROJET TECHNOLOGY CO., LTD.
    Inventors: Hao-Jan Mou, Rong-Ho Yu, Cheng-Ming Chang, Hsien-Chung Tai, Wen-Hsiung Liao, Chi-Feng Huang, Yung-Lung Han, Chang-Yen Tsai
  • Patent number: 10804112
    Abstract: A planarization structure is formed with a planar upper face enclosing a relief projecting from a planar substrate. The process used deposits a layer of a first material over the reliefs and then forms a layer of a second material with a planar upper face. This second material may be etched selectively with respect to the first material. The second layer is processed so that the protuberances of the first material are uncovered. A planarizing is then performed on the first material as far as the layer of the second material by selective chemical-mechanical polishing with respect to the second material.
    Type: Grant
    Filed: May 14, 2018
    Date of Patent: October 13, 2020
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventor: Loic Gaben
  • Patent number: 10800004
    Abstract: A system controls a flow of a chemical mechanical polish (CMP) slurry into a chamber to form a slurry reservoir within the chamber. Once the slurry reservoir has been formed within the chamber, the system moves a polishing head to position and force a surface of a wafer that is attached to the polishing head into contact with a polishing pad attached to a platen within the chamber. A wafer/pad interface is formed at the surface of the wafer forced into contact with the polishing pad and the wafer/pad interface is disposed below an upper surface of the slurry reservoir. During CMP processing, the system controls one or more of a level, a force, and a rotation of the platen, a position, a force and a rotation of the polishing head to conduct the CMP processing of the surface of the wafer at the wafer/pad interface.
    Type: Grant
    Filed: January 18, 2019
    Date of Patent: October 13, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Wen Liu, Hao-Yun Cheng, Che-Hao Tu, Kei-Wei Chen
  • Patent number: 10790152
    Abstract: In a method for etching a multilayer film of a target object by using a plasma processing apparatus, the multilayer film of the target object includes a layer made of a metal magnetic material and a mask is provided on the multilayer film. The multilayer film is etched in a state where a pressure in a processing chamber of the plasma processing apparatus is set to a first pressure that is a relatively high pressure. Subsequently, the multilayer film is further etched in a state where the pressure in the processing chamber is set to a second pressure lower than the first pressure.
    Type: Grant
    Filed: July 15, 2016
    Date of Patent: September 29, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Takuya Kubo, Song yun Kang, Tamotsu Morimoto
  • Patent number: 10787592
    Abstract: Acid chemical mechanical polishing compositions and methods have enhanced defect inhibition and selectively polish silicon nitride over silicon dioxide in an acid environment. The acid chemical mechanic polishing compositions include poly(2-ethyl-2-oxazoline) polymers, anionic functional colloidal silica particles, amine carboxylic acids and have a pH of 5 or less.
    Type: Grant
    Filed: May 16, 2019
    Date of Patent: September 29, 2020
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, I
    Inventors: Naresh Kumar Penta, Kwadwo E. Tettey, Matthew Van Hanehem
  • Patent number: 10777423
    Abstract: A planarization method and a CMP method are provided. The planarization method includes providing a substrate with a first region and a second region having different degrees of hydrophobicity or hydrophilicity and performing a surface treatment to the first region to render the degrees of hydrophobicity or hydrophilicity in proximity to that of the second region. The CMP method includes providing a substrate with a first region and a second region; providing a polishing slurry on the substrate, wherein the polishing slurry and the surface of the first region have a first contact angle, and the polishing slurry and the surface of the first region have a second contact angle; modifying the surface of the first region to make a contact angle difference between the first contact angle and the second contact angle equal to or less than 30 degrees.
    Type: Grant
    Filed: June 8, 2018
    Date of Patent: September 15, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Tung-Kai Chen, Ching-Hsiang Tsai, Kao-Feng Liao, Chih-Chieh Chang, Chun-Hao Kung, Fang-I Chih, Hsin-Ying Ho, Chia-Jung Hsu, Hui-Chi Huang, Kei-Wei Chen
  • Patent number: 10770306
    Abstract: A cavity is etched in a stack of layers which includes a first layer made of a first material and a second layer made of a second material. To etch the cavity, a first etch mask having a first opening is formed over the stack of layer. The stack of layers is then etched through the first opening to a depth located in the second layer. A second mask having a second opening, the dimensions of which are smaller, in top view, than the first opening, is formed over the stack of layer. The second opening is located, in top view, opposite the area etched through the first opening. The second layer is then etched through the second opening to reach the first layer. The etch method used is configured to etch the second material selectively over the first material.
    Type: Grant
    Filed: January 4, 2019
    Date of Patent: September 8, 2020
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventors: Pierre Bar, Francois Leverd, Delia Ristoiu
  • Patent number: 10770314
    Abstract: A semiconductor device is manufactured using a cleaning process. The cleaning process utilizes a semiconductor manufacturing tool that has a wet cleaning section and a plasma cleaning section. The semiconductor device is placed within a wet cleaning chamber within the wet cleaning section, where a wet cleaning process is performed. Once completed, and without breaking atmosphere, the semiconductor device is removed from the wet cleaning section and placed within a plasma cleaning chamber within the plasma cleaning section. A plasma clean is then performed.
    Type: Grant
    Filed: August 1, 2017
    Date of Patent: September 8, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Meng-Hsien Li, Hsin-Hsien Lu
  • Patent number: 10761423
    Abstract: A method includes forming a tri-layer. The tri-layer includes a bottom layer; a middle layer over the bottom layer; and a top layer over the middle layer. The top layer includes a photo resist. The method further includes removing the top layer; and removing the middle layer using a chemical solution. The chemical solution is free from potassium hydroxide (KOH), and includes at least one of a quaternary ammonium hydroxide and a quaternary ammonium fluoride.
    Type: Grant
    Filed: October 3, 2017
    Date of Patent: September 1, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Li-Min Chen, Kuo Bin Huang, Neng-Jye Yang, Chia-Wei Wu, Jian-Jou Lian
  • Patent number: 10748778
    Abstract: There is provided a polishing method capable of more reducing defects on a silicon wafer surface. A polishing method of a silicon wafer, which includes a polishing step and a surface treatment step conducted after the polishing step and in which the number of abrasives in a surface treatment composition used in the surface treatment step is 1.0×1010 particles/mL or more and 1.0×1013 particles/mL or less by calculating from (1 [mL]×specific gravity of the composition [g/mL]×concentration of the abrasives [wt %])/((4/3)?×(average secondary particle diameter×10?7 [cm]/2)3 [/particle]×specific gravity of the abrasives [g/cm3]), using concentration of the abrasives in the surface treatment composition and an average secondary particle diameter measured by dynamic light scattering method, provided that all of the abrasives in the surface treatment composition used in the surface treatment step are assumed to have the average secondary particle diameter.
    Type: Grant
    Filed: February 26, 2019
    Date of Patent: August 18, 2020
    Assignee: FUJIMI INCORPORATED
    Inventor: Kohsuke Tsuchiya
  • Patent number: 10745589
    Abstract: Chemical mechanical polishing (CMP) compositions, methods and systems for polish cobalt or cobalt-containing substrates are provided. The CMP compositions comprise ?-alanine, abrasive particles, a salt of phosphate, corrosion inhibitor, oxidizer and water. The cobalt chemical mechanical polishing compositions provide high removal rate of Co as well as very high selectivity of Co film vs. dielectric film, such as TEOS, SixNy (with 1.0<x<3.0, 1.33<y<4.0), low-k, and ultra low-k films.
    Type: Grant
    Filed: June 6, 2017
    Date of Patent: August 18, 2020
    Assignee: Versum Materials US, LLC
    Inventors: Xiaobo Shi, Joseph Rose, Timothy Joseph Clore, James Allen Schlueter, Malcolm Grief, Mark Leonard O'Neill
  • Patent number: 10748781
    Abstract: A method of catalyst-assisted chemical etching with a vapor-phase etchant has been developed. In one approach, a semiconductor substrate including a patterned titanium nitride layer thereon is heated, and an oxidant and an acid are evaporated to form a vapor-phase etchant comprising an oxidant vapor and an acid vapor. The semiconductor substrate and the patterned titanium nitride layer are exposed to the vapor-phase etchant during the heating of the semiconductor substrate. The vapor-phase etchant diffuses through the patterned titanium nitride layer, and titanium nitride-covered regions of the semiconductor substrate are etched. Thus, an etched semiconductor structure is formed.
    Type: Grant
    Filed: March 22, 2019
    Date of Patent: August 18, 2020
    Assignee: The Board of Trustees of the University of Illinois
    Inventors: Xiuling Li, Dane J. Sievers, Lukas Janavicius, Jeong Dong Kim
  • Patent number: 10744771
    Abstract: To manufacture a liquid ejection head, a film having a lower surface free energy than a surface free energy of a substrate is first formed on an inner face of a liquid supply port. Next, a dry film to be a flow path forming member is attached to cover the surface of the substrate, and then a member to be an ejection orifice forming member is provided on the surface of the dry film.
    Type: Grant
    Filed: August 30, 2018
    Date of Patent: August 18, 2020
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Keiji Matsumoto, Seiichiro Yaginuma, Koji Sasaki, Jun Yamamuro, Kunihito Uohashi, Ryotaro Murakami, Tomohiko Nakano, Shingo Nagata
  • Patent number: 10741406
    Abstract: Disclosed is a dry etching method for etching a laminated film of silicon oxide layers and silicon nitride layers on a substrate. The dry etching method includes providing a mask on the laminated film, generating a plasma from a dry etching agent and etching the laminated film by the plasma through the mask under a bias voltage of 500 V or higher to form a through hole in the laminated film vertically to the layers, wherein the dry etching agent contains at least C3H2F4, an unsaturated perfluorocarbon represented by CxFy and an oxidizing gas, and wherein a volume of the unsaturated perfluorocarbon contained in the dry etching agent is 0.1 to 10 times a volume of the C3H2F4 contained in the dry etching agent.
    Type: Grant
    Filed: July 1, 2016
    Date of Patent: August 11, 2020
    Assignee: Central Glass Company, Limited
    Inventors: Hiroyuki Oomori, Akifumi Yao
  • Patent number: 10734229
    Abstract: Techniques herein include a method of forming etch masks to form contact holes and other features. Techniques herein use a reversal method to create contact hole patterns with improved critical dimension uniformity and contact edge roughness as compared to traditional direct print photolithography methods. A pillar is printed as an initial structure. The initial structure is reshaped to change smoothness, uniformity, and/or dimensions. A conformal film is deposited on the pillar. The conformal film can include a metal-containing material. A planarization process is executed that removes pillars down to the working surface of the substrate leaving the conformal film on the working surface of the substrate. This conformal film can then be used as an etch mask for additional pattern transfer.
    Type: Grant
    Filed: January 4, 2019
    Date of Patent: August 4, 2020
    Assignee: Tokyo Electron Limited
    Inventors: Anton J. deVilliers, Corey Lemley
  • Patent number: 10707090
    Abstract: A plasma etching method includes a first process of generating a first plasma from a first processing gas that contains fluorine-containing gas and hydrogen-containing gas, by using a first radio frequency power, to etch a laminated film including a first silicon-containing film layer and a second silicon-containing film layer that is different from the first silicon-containing film layer, with the generated first plasma; and a second process that is performed after the first process and includes generating a second plasma from a second processing gas that contains bromine-containing gas, by using a second radio frequency power, to etch the laminated film with the generated second plasma. Unevenness is formed at an interface between the first silicon-containing film layer and the second silicon-containing film layer in the first process, and the unevenness is removed in the second process.
    Type: Grant
    Filed: April 10, 2018
    Date of Patent: July 7, 2020
    Assignee: Tokyo Electron Limited
    Inventors: Wataru Takayama, Sho Tominaga, Yoshiki Igarashi
  • Patent number: 10703935
    Abstract: Provided is a polishing composition for a silicon oxide film that can improve the speed of polishing a silicon oxide film. In one or more embodiments, a polishing composition for a silicon oxide film contains: water; a cerium oxide particle; and a compound having in its molecule an amino group and at least one acid group selected from a sulfonic acid group and a phosphonic acid group. In the polishing composition, [the number of moles of the acid group contained in the compound]/[total surface area of the cerium oxide particle] is in a range from 1.6×10?5 mol/m2 to 5.0×10?2 mol/m2.
    Type: Grant
    Filed: September 25, 2015
    Date of Patent: July 7, 2020
    Assignee: KAO CORPORATION
    Inventors: Haruhiko Doi, Koji Kinuta
  • Patent number: 10699900
    Abstract: Provided is a method for forming a thin film. The method for forming the thin film includes forming a first thin film having a first thickness with first crystallinity through an atomic layer deposition process and etching the first thin film by a predetermined thickness through an atomic layer etching process with respect to the first thin film to form a second thin film having a second thickness less than the first thickness.
    Type: Grant
    Filed: May 10, 2019
    Date of Patent: June 30, 2020
    Assignee: WONIK IPS CO., LTD.
    Inventors: Sang Jun Park, Tae Ho Jeon, Sang Jin Lee, Chang Hee Han, Tae Ho Kim
  • Patent number: 10685839
    Abstract: There is provided a method for implementing and regulating patterning of a graphene film by ultraviolet photo-oxidation, including: implementing patterning of a graphene film micron structure pattern by using a xenon lamp excimer ultraviolet photo-oxidation vacuum apparatus and a hard mask; 2: controlling oxygen excitons, by applying a non-uniform magnetic field on the surface of the graphene film in a vertical direction, to move toward the graphene film in a direction of a magnetic field, so as to enhance the directivity of etching to the graphene film in the vertical direction, thereby improving patterning quality of the graphene film with micron-structure; and (3) by adjusting the intensity and direction of the magnetic field moving direction of the oxygen excitons is controlled, and the shape of the etched pattern structure of the graphene film is controlled, and thus controlling the patterning of the graphene film may be achieved.
    Type: Grant
    Filed: October 18, 2016
    Date of Patent: June 16, 2020
    Assignee: SHANGHAI JIAO TONG UNIVERSITY
    Inventors: Haihua Tao, Xianfeng Chen, Yixuan Wu, Shubin Su, Huan Yue, Hao Li