Patents Examined by Martin J. Angebranndt
  • Patent number: 11450445
    Abstract: A method for manufacturing an electroconductive pattern 40, provided with: a lamination step for laminating an acid generation film 10 containing an acid proliferation agent and a photoacid generator on a polymer film 20 containing an electroconductive polymer formed on a substrate 21; a masking step for masking the top of the acid generation film 10; a light irradiation step for irradiating the laminate from the acid-generation-film 10 side; a doping step for doping the electroconductive polymer with an acid generated and proliferated in the acid generation film 10 by the light irradiation; and a releasing step for releasing the acid generation film 10 from the polymer film 20. This method makes it possible to provide an electroconductive film and a method for manufacturing an electroconductive pattern in which photoacid generation and acid proliferation effects are utilized.
    Type: Grant
    Filed: June 8, 2020
    Date of Patent: September 20, 2022
    Assignees: TOKYO UNIVERSITY OF SCIENCE FOUNDATION, NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Koji Arimitsu, Makoto Wakabayashi
  • Patent number: 11448955
    Abstract: A mask includes a substrate, a light-reflecting structure, a patterned layer, and a plurality of bumps. The substrate has a first surface and a second surface. The light-reflecting structure is located on the first surface of the substrate. The patterned layer is located on the light-reflecting structure. The bumps are located on the second surface of the substrate. The bumps define a plurality of voids therebetween and protrude in a direction away from the second surface of the substrate.
    Type: Grant
    Filed: January 23, 2019
    Date of Patent: September 20, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chi-Hung Liao, Yueh-Lin Yang
  • Patent number: 11435664
    Abstract: Provided is a photopolymer composition for hologram recording comprising: a polymer matrix or a precursor thereof; a dye including a compound of the following Chemical Formula 1; a photoreactive monomer; and a photoinitiator,
    Type: Grant
    Filed: December 13, 2019
    Date of Patent: September 6, 2022
    Assignees: LG Chem, Ltd., Korea Advanced Institute of Science and Technology
    Inventors: Heon Kim, Yoosik Kim, Raisa Kharbash, Se Hyun Kwon, Yeongrae Chang, Seokhoon Jang
  • Patent number: 11427656
    Abstract: To provide a photosensitive composition for hologram recording that enables further improvement in diffraction characteristic. A photosensitive composition for hologram recording that includes at least two kinds of photopolymerizable monomers, a photopolymerization initiator, a binder resin, and a polymerization inhibitor. The at least two kinds of photopolymerizable monomers are a monofunctional monomer and a polyfunctional monomer.
    Type: Grant
    Filed: August 30, 2017
    Date of Patent: August 30, 2022
    Assignee: SONY CORPORATION
    Inventors: Hisaya Hara, Eri Igarashi, Kenshiro Kawasaki
  • Patent number: 11422465
    Abstract: A method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a polymer, a sensitizer, and a photo-acid generator (PAG), wherein the sensitizer includes a resonance ring that includes nitrogen and at least one double bond. The method further includes performing an exposing process to the photoresist layer. The method further includes developing the photoresist layer, thereby forming a patterned photoresist layer.
    Type: Grant
    Filed: December 18, 2019
    Date of Patent: August 23, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Han Lai, Chin-Hsiang Lin, Chien-Wei Wang
  • Patent number: 11415886
    Abstract: A resist composition is disclosed which comprises a perovskite material with a structure having a chemical formula selected from ABX3, A2BX4, or ABX4, wherein A is a compound containing an NH3 group, B is a metal and X is a halide constituent. The perovskite material may comprise one or more of the following components: halogen-mixed perovskite material; metal-mixed perovskite material, and organic ligand mixed perovskite material.
    Type: Grant
    Filed: July 16, 2019
    Date of Patent: August 16, 2022
    Assignee: ASML Netherlands B.V.
    Inventors: Sander Frederik Wuister, Oktay Yildirim, Gijsbert Rispens, Alexey Olegovich Polyakov
  • Patent number: 11402744
    Abstract: A photomask blank has a first layer, a second layer, a third layer and a fourth layer. The first layer has a chromium content of 40 atomic % or less, an oxygen content of 38 atomic % or more, and a nitrogen content of 22 atomic % or less. The second layer has a chromium content of 38 atomic % or less, an oxygen content of 30 atomic % or more, a nitrogen content of 18 atomic % or less, and a carbon content of 14 atomic % or less. The third layer has a chromium content of 50 atomic % or less, an oxygen content of 30 atomic % or less, and a nitrogen content of 20 atomic % or more. The fourth layer has a chromium content of 44 atomic % or less, an oxygen content of 20 atomic % or more, a nitrogen content of 20 atomic % or less, and a carbon content of 16 atomic % or less.
    Type: Grant
    Filed: December 4, 2020
    Date of Patent: August 2, 2022
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventor: Naoki Matsuhashi
  • Patent number: 11402753
    Abstract: Provided is a positive resist composition capable of improving the adhesion between a resist film formed through pre-baking and a workpiece and reducing changes in the molecular weight of the polymer in the resist film before and after pre-baking step over broader ranges of heating temperature and heating time (at lower heating temperatures) during pre-baking.
    Type: Grant
    Filed: August 23, 2018
    Date of Patent: August 2, 2022
    Assignee: ZEON CORPORATION
    Inventor: Manabu Hoshino
  • Patent number: 11392037
    Abstract: There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography comprising a hydrolyzable organosilane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof as a silane, wherein a silane having a cyclic amino group is contained in an amount of less than 1% by mole, preferably 0.01 to 0.95% by mole. A film forming composition comprising a hydrolyzable organosilane having a cyclic amino group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. A resist underlayer film forming composition for lithography comprising a hydrolyzable organosilane having a cyclic amino group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The cyclic amino group may be a secondary amino group or a tertiary amino group.
    Type: Grant
    Filed: February 16, 2009
    Date of Patent: July 19, 2022
    Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Makoto Nakajima, Wataru Shibayama, Yuta Kanno
  • Patent number: 11378881
    Abstract: A holographic recording medium composition contains an isocyanate group-containing compound (component (a-1)), an isocyanate-reactive functional group-containing compound (component (b-1)), a polymerizable monomer (component (c-1)), a photopolymerization initiator (component (d-1)), and a stable nitroxyl radical group-containing compound (component (e-1)). A ratio of the total weight of a propylene glycol unit and a tetramethylene glycol unit that are contained in the component (b-1) to the total weight of the component (a-1) and the component (b-1) is 30% or less.
    Type: Grant
    Filed: November 25, 2020
    Date of Patent: July 5, 2022
    Assignee: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Asato Tanaka, Takanori Shimizu
  • Patent number: 11370888
    Abstract: A silsesquioxane resin, photoresist composition comprising the silsesquioxane resin and a photoacid generator, etching mask composition comprising the silsesquioxane resin, products prepared therefrom, methods of making and using same, and manufactured articles and semiconductor devices containing same. The silsesquioxane resin comprises silicon-bonded hydrogen atom T-units and T-units having a silicon-bonded group of formula —CH2CH2CH2CO2C(R1a)3 or —CH(CH3)CH2CO2C(R1a)3, wherein each R1a is independently an unsubstituted (C1-C2)alkyl.
    Type: Grant
    Filed: June 8, 2017
    Date of Patent: June 28, 2022
    Assignee: Dow Silicones Corporation
    Inventors: Peng-Fei Fu, Wonbum Jang
  • Patent number: 11372323
    Abstract: A phase-shift mask for extreme ultraviolet (EUV) lithography may be provided. The phase-shift mask may include a substrate, a reflection layer on the substrate, and phase-shift patterns including at least one metal nitride on the reflection layer. The at least one metal nitride may include at least one of TaN, TiN, ZrN, HfN, CrN, VN, NbN, MoN, WN, AlN, GaN, ScN, and YN.
    Type: Grant
    Filed: March 10, 2020
    Date of Patent: June 28, 2022
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hwanseok Seo, SeongSue Kim, Taehoon Lee, Roman Chalykh
  • Patent number: 11372324
    Abstract: A method for correcting a mask pattern includes: providing an original mask pattern including at least one dense pattern area and at least one isolated pattern area, and the original mask pattern being divided into a first pattern and a second pattern, wherein the first pattern is formed in the isolated pattern area and extends to the dense pattern area, and the second pattern is formed in the dense pattern area; forming at least one slot on at least one section of the first pattern, and the at least one section of the first pattern is located on at least one transition area between the at least one isolated pattern area and the at least one dense pattern area; and performing an optical proximity correction operation on the first pattern formed with at least one slot and the second pattern. Using the corrected mask pattern may avoid the occurrence of necking or breaking on portion of the post-transfer pattern.
    Type: Grant
    Filed: February 11, 2019
    Date of Patent: June 28, 2022
    Assignee: UNITED MICROELECTRONICS CORPORATION
    Inventors: Chia-Chen Sun, Yu-Cheng Tung, Sheng-Yuan Hsueh, Fan Wei Lin
  • Patent number: 11341426
    Abstract: A quantum information processing device including a semiconductor substrate. An optical resonator is coupled to the substrate. The optical resonator supports a first photonic mode with a first resonator frequency. The quantum information processing device includes a non-gaseous chalcogen donor atom disposed within the semiconductor substrate and optically coupled to the optical resonator. The donor atom has a transition frequency in resonance with the resonator frequency. Also disclosed herein are systems, devices, articles and methods with practical application in quantum information processing including or associated with one or more deep impurities in a silicon substrate optically coupled to an optical structure.
    Type: Grant
    Filed: November 25, 2016
    Date of Patent: May 24, 2022
    Assignee: Photonic Inc.
    Inventors: Stephanie Simmons, Michael L. W. Thewalt
  • Patent number: 11340524
    Abstract: The present disclosure provides a photomask, including a front side having a patterned layer, a back side opposite to the front side, a sidewall connecting the front side and the back side, a reflective layer between the front side and the back side, and a polymer layer on the backside of the photomask.
    Type: Grant
    Filed: February 19, 2020
    Date of Patent: May 24, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Tzu Han Liu, Chih-Wei Wen, Chung-Hung Lin
  • Patent number: 11327393
    Abstract: A photomask blank comprising a transparent substrate and a light-shielding film disposed thereon is provided. The light-shielding film is constructed by a single layer or multiple layers including a light-shielding layer containing Si and N, having a N content of 3-50 at % based on the sum of Si and N, being free of a transition metal.
    Type: Grant
    Filed: May 4, 2020
    Date of Patent: May 10, 2022
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Takuro Kosaka, Yukio Inazuki, Hideo Kaneko
  • Patent number: 11307490
    Abstract: Provided is a phase shift mask blank including a substrate, and a phase shift film thereon, the phase shift film composed of a material containing silicon and nitrogen and free of a transition metal, the phase shift film including at least one compositionally graded layer having a composition continuously varying in a thickness direction, and a refractive index n and an extinction coefficient k, with respect to exposure light, varying in the thickness direction, the exposure light being KrF excimer laser, the compositionally graded layer having a difference between a maximum refractive index n(H) and a minimum refractive index n(L) of up to 0.40, and a difference between a maximum extinction coefficient k(H) and a minimum extinction coefficient k(L) of up to 1.5.
    Type: Grant
    Filed: March 27, 2020
    Date of Patent: April 19, 2022
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventor: Takuro Kosaka
  • Patent number: 11307494
    Abstract: The present disclosure relates to a hologram medium comprising: a polymer substrate including a polymer resin in which a silane-based functional group is located in a main chain or a branched chain, wherein a fine pattern is formed on at least one surface of the polymer substrate, and an optical element.
    Type: Grant
    Filed: September 10, 2019
    Date of Patent: April 19, 2022
    Assignee: LG CHEM, LTD.
    Inventors: Heon Kim, Seokhoon Jang, Se Hyun Kwon, Yeongrae Chang, Jinseok Byun
  • Patent number: 11307492
    Abstract: A method for forming a photomask is provided. The method includes forming a light blocking layer over a transparent substrate. The light blocking layer has a first portion, a second portion, and a connection portion. The method includes forming a mask layer over the first portion and the second portion of the light blocking layer. The method includes removing the connection portion. The method includes removing the mask layer. The second portion of the light blocking layer is removed during removing the mask layer, while the first portion remains. The method includes after removing the mask layer and the second portion, removing the third portion of the transparent substrate to form a first recess in the transparent substrate. The method includes forming a light blocking structure in the first recess.
    Type: Grant
    Filed: November 23, 2020
    Date of Patent: April 19, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shih-Ming Chang, Minfeng Chen, Min-An Yang, Shao-Chi Wei
  • Patent number: 11300871
    Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate, a multilayer stack of reflective layers on the substrate, a capping layer on the multilayer stack of reflecting layers, and an absorber on the capping layer. The absorber comprising a plurality of bilayers comprising a first layer of silicon and a second layer selected from the group consisting of TaSb, CSb, TaNi, TaCu, SbN, CrN, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, Pt, oxides of TaSb, CSb, TaNi, TaCu, SbN, CrN, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, Pt, and nitrides of TaSb, CSb, TaNi, TaCu, Cr, Ir, Pd, Re, Os, Cd, Co, Ag, and Pt.
    Type: Grant
    Filed: April 29, 2020
    Date of Patent: April 12, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Shiyu Liu, Shuwei Liu, Vibhu Jindal, Azeddine Zerrade