Patents Examined by Martin J. Angebranndt
  • Patent number: 11932529
    Abstract: In described examples, a microelectromechanical system (MEMS) includes a first element and a second element. The first element is mounted on a substrate and has a first contact surface. The second element is mounted on the substrate and has a second contact surface that protrudes from the second element to form an acute contact surface. The first element and/or the second element is/are operable to move in: a first direction, such that the first contact surface comes in contact with the second contact surface; and a second direction, such that the second contact surface separates from the first contact surface.
    Type: Grant
    Filed: March 10, 2020
    Date of Patent: March 19, 2024
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Patrick Ian Oden, James Carl Baker, Sandra Zheng, William C. McDonald
  • Patent number: 11932713
    Abstract: New monomer and polymer materials that comprise one or more Te atoms. In one aspect, tellurium-containing monomers and polymers are provided that are useful for Extreme Ultraviolet Lithography.
    Type: Grant
    Filed: December 31, 2018
    Date of Patent: March 19, 2024
    Assignee: ROHM AND HAAS ELECTRONIC MATERIALS LLC
    Inventors: Emad Aqad, James F. Cameron, James W. Thackeray
  • Patent number: 11927881
    Abstract: A pellicle for extreme ultraviolet (EUV) lithography is based on yttrium carbide and used in a EUV lithography process. The pellicle for EUV lithography includes a pellicle layer that has a core layer containing yttrium carbide. The yttrium carbide is YCx in which the atomic percentage of carbon is within a range of 25% to 45%.
    Type: Grant
    Filed: November 29, 2021
    Date of Patent: March 12, 2024
    Assignee: Korea Electronics Technology Institute
    Inventors: Hyeong Keun Kim, Seul Gi Kim, Hyun Mi Kim, Jin Woo Cho, Ki Hun Seong
  • Patent number: 11917897
    Abstract: A polymer blend, including at least one organic semiconductor (OSC) polymer and at least one photosensitizer, such that the at least one OSC polymer is a diketopyrrolopyrrole-fused thiophene polymeric material, wherein the fused thiophene is beta-substituted.
    Type: Grant
    Filed: September 28, 2020
    Date of Patent: February 27, 2024
    Assignee: CORNING INCORPORATED
    Inventors: Mingqian He, Xin Li, Yang Li, Hongxiang Wang
  • Patent number: 11914304
    Abstract: A method to control the density of a three-dimensional photonic crystal template involves changing the irradiation time from at least four laser beams to yield a periodic percolating matrix of mass and voids free of condensed matter from a photoresist composition. The photoresist composition includes a photoinitiator at a concentration where the dose or irradiation is controlled by the irradiation time and is less than the irradiation time that would convert all photoinitiator to initiating species such that the density of the three-dimensional photonic crystal template differs for different irradiation times. A deposition of reflecting or absorbing particles can be patterned on the surface of the photoresist composition to form a template with varying densities above different areas of the substrate.
    Type: Grant
    Filed: August 5, 2021
    Date of Patent: February 27, 2024
    Assignees: Toyota Motor Engineering & Manufacturing North America, Inc., The Board of Trustees of the University of Illinois
    Inventors: Shailesh N. Joshi, Gaurav Singhal, Paul Vannest Braun, Danny J. Lohan, Kai-Wei Lan
  • Patent number: 11914286
    Abstract: The present disclosure provides an apparatus for a lithography process in accordance with some embodiments. The apparatus includes a pellicle membrane, a pellicle frame including a material selected from the group consisting of boron nitride (BN), boron carbide (BC), and a combination thereof, a mask, a first adhesive layer that secures the pellicle membrane to the pellicle frame, and a second adhesive layer that secures the pellicle frame to the mask.
    Type: Grant
    Filed: April 4, 2022
    Date of Patent: February 27, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD
    Inventors: Amo Chen, Yun-Yue Lin, Ta-Cheng Lien, Hsin-Chang Lee, Chih-Cheng Lin, Jeng-Horng Chen
  • Patent number: 11906900
    Abstract: Proposed is a photoresist composition for a KrF light source, which exhibits a vertical profile compared to conventional KrF positive photoresists by adding a resin capable of increasing transmittance in order to form a semiconductor pattern, particularly a chemically amplified positive photoresist composition for improving a pattern profile, which includes, based on the total weight of the composition, 5 to 60 wt % of a polymer resin, 0.1 to 10 wt % of a transmittance-increasing resin additive represented by Chemical Formula 1, 0.05 to 10 wt % of a photoacid generator, 0.01 to 5 wt % of an acid diffusion inhibitor, and the remainder of a solvent, thus making it possible to provide a composition exhibiting a vertical profile, enhanced sensitivity and a superior processing margin compared to conventional positive photoresists.
    Type: Grant
    Filed: May 22, 2019
    Date of Patent: February 20, 2024
    Assignee: YOUNG CHANG CHEMICAL CO., LTD
    Inventors: Su Jin Lee, Young Cheol Choi, Seung Hun Lee, Seung Hyun Lee
  • Patent number: 11886116
    Abstract: Multiple patterning approaches using radiation sensitive organometallic materials is described. In particular, multiple patterning approaches can be used to provide distinct multiple patterns of organometallic material on a hardmask or other substrate through a sequential approach that leads to a final pattern. The multiple patterning approach may proceed via sequential lithography steps with multiple organometallic layers and may involve a hardbake freezing after development of each pattern. Use of an organometallic resist with dual tone properties to perform pattern cutting and multiple patterning of a single organometallic layer are described. Corresponding structures are also described.
    Type: Grant
    Filed: May 4, 2021
    Date of Patent: January 30, 2024
    Assignee: Inpria Corporation
    Inventors: Peter de Schepper, Jason K. Stowers, Sangyoon Woo, Michael Kocsis, Alan J. Telecky
  • Patent number: 11884839
    Abstract: An acetal-protected polysiloxane composition, used as a photosensitive composition and a coating composition for forming a flat film on a substrate to be processed for performing pattern reversal. A coating composition or photosensitive composition including: a polysiloxane obtained from a hydrolysis-condensation product of a hydrolyzable silane having 2 to 4 hydrolyzable groups in a molecule by protecting the condensation product's silanol groups with acetal groups, wherein in the hydrolysis-condensation product, an organic group bonded to silicon atoms through Si—C bonds exists in molar ratio of 0?(organic group)/(Si)?0.29 on average.
    Type: Grant
    Filed: August 28, 2017
    Date of Patent: January 30, 2024
    Assignee: NISSAN CHEMICAL CORPORATION
    Inventors: Yuki Endo, Hiroaki Yaguchi, Makoto Nakajima
  • Patent number: 11868041
    Abstract: A pellicle frame includes a check valve, wherein the check valve is configured to permit gas flow from an interior of the pellicle to an exterior of the pellicle. The pellicle frame further includes a bottom surface of the frame defines only a single recess therein. The pellicle frame further includes a gasket configured to fit within the single recess.
    Type: Grant
    Filed: October 18, 2022
    Date of Patent: January 9, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chue San Yoo, Hsin-Chang Lee, Pei-Cheng Hsu, Yun-Yue Lin
  • Patent number: 11851515
    Abstract: The present disclosure relates to a photopolymer composition including a polymer matrix or a precursor thereof having a predetermined chemical structure; a photoreactive monomer; and a photoinitiator, a hologram recording medium, an optical element and a holographic recording method using the same.
    Type: Grant
    Filed: June 29, 2020
    Date of Patent: December 26, 2023
    Assignee: LG Chem, Ltd.
    Inventors: Seokhoon Jang, Heon Kim, Se Hyun Kwon, Yeongrae Chang
  • Patent number: 11829069
    Abstract: New photoresist and topcoat compositions are provided that are useful in a variety of applications. In one aspect, new photoresist compositions are provided that comprise: (a) a first matrix polymer; (b) one or more acid generators; and (c) one or more additive compounds of Formulae (I) and/or (II).
    Type: Grant
    Filed: December 31, 2018
    Date of Patent: November 28, 2023
    Assignee: ROHM AND HAAS ELECTRONIC MATERIALS LLC
    Inventors: Joshua Kaitz, Tomas Marangoni, Emad Aqad, Amy M. Kwok, Mingqi Li, Thomas Cardolaccia, Choong-Bong Lee, Ke Yang, Cong Liu
  • Patent number: 11815800
    Abstract: A photosensitive composition includes a plurality of quantum dots including an organic ligand on the surface thereof; a binder; a photopolymerizable monomer composition; photoinitiator; and a solvent, wherein the photopolymerizable monomer includes a main monomer having 1 to 6 carbon-carbon double bonds, a first accessory monomer having 8 to 20 carbon-carbon double bonds, and a second accessory monomer represented by Chemical Formula A; and a method of preparing the photosensitive composition and a quantum dot-polymer composite pattern prepared therefrom are provided: R1O-(L1)m-L3-A-L4-(L2)n-OR2??Chemical Formula A wherein, A, L1, L2, L3, L4, R1, and R2 are the same as defined herein.
    Type: Grant
    Filed: September 20, 2021
    Date of Patent: November 14, 2023
    Assignees: SAMSUNG ELECTRONICS CO., LTD., SAMSUNG SDI CO., LTD.
    Inventors: Jonggi Kim, Shang Hyeun Park, Shin Ae Jun, Hojeong Paek
  • Patent number: 11815815
    Abstract: Provided is a resist underlayer film-forming composition for forming resist underlayer film usable as hard mask and removable by wet etching process using chemical solution such as sulfuric acid/hydrogen peroxide. A resist underlayer film-forming composition for lithography includes a component (A) and component (B), the component (A) includes a hydrolyzable silane, hydrolysis product thereof, or hydrolysis-condensation product thereof, the hydrolyzable silane includes hydrolyzable silane of Formula (1): R1aR2bSi(R3)4?(a+b) (where R1 is organic group of Formula (2): and is bonded to silicon atom through a Si—C bond; R3 is an alkoxy group, acyloxy group, or halogen group; is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3), and the component (B) is cross-linkable compound having ring structure having alkoxymethyl group or hydroxymethyl group, cross-linkable compound having epoxy group or blocked isocyanate group.
    Type: Grant
    Filed: November 6, 2015
    Date of Patent: November 14, 2023
    Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Hiroyuki Wakayama, Makoto Nakajima, Wataru Shibayama, Masahisa Endo
  • Patent number: 11809080
    Abstract: A method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a polymer, a sensitizer, and a photo-acid generator (PAG), wherein the sensitizer includes a resonance ring that includes nitrogen and at least one double bond. The method further includes performing an exposing process to the photoresist layer. The method further includes developing the photoresist layer, thereby forming a patterned photoresist layer.
    Type: Grant
    Filed: July 29, 2022
    Date of Patent: November 7, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Han Lai, Chin-Hsiang Lin, Chien-Wei Wang
  • Patent number: 11796922
    Abstract: In a method of forming a pattern, a photo resist layer is formed over an underlying layer, the photo resist layer is exposed to an actinic radiation carrying pattern information, the exposed photo resist layer is developed to form a developed resist pattern, a directional etching operation is applied to the developed resist pattern to form a trimmed resist pattern, and the underlying layer is patterned using the trimmed resist pattern as an etching mask.
    Type: Grant
    Filed: September 30, 2019
    Date of Patent: October 24, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ru-Gun Liu, Huicheng Chang, Chia-Cheng Chen, Jyu-Horng Shieh, Liang-Yin Chen, Shu-Huei Suen, Wei-Liang Lin, Ya Hui Chang, Yi-Nien Su, Yung-Sung Yen, Chia-Fong Chang, Ya-Wen Yeh, Yu-Tien Shen
  • Patent number: 11798590
    Abstract: The present invention relates to a method for recording data in a layer of a ceramic material and to a device for recording data in a layer of a ceramic material.
    Type: Grant
    Filed: September 29, 2022
    Date of Patent: October 24, 2023
    Assignee: Ceramic Data Solutions GmbH
    Inventor: Christian Pflaum
  • Patent number: 11782345
    Abstract: A method according to the present disclosure includes providing a substrate, depositing an underlayer over the substrate, depositing a photoresist layer over the underlayer, exposing a portion of the photoresist layer and a portion of the underlayer to a radiation source according to a pattern, baking the photoresist layer and underlayer, and developing the exposed portion of the photoresist layer to transfer the pattern to the photoresist layer. The underlayer includes a polymer backbone, a polarity switchable group, a cross-linkable group bonded to the polymer backbone, and photoacid generator. The polarity switchable group includes a first end group bonded to the polymer backbone, a second end group including fluorine, and an acid labile group bonded between the first end group and the second end group. The exposing decomposes the photoacid generator to generate an acidity moiety that detaches the second end group from the polymer backbone during the baking.
    Type: Grant
    Filed: December 5, 2019
    Date of Patent: October 10, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chien-Chih Chen, Ching-Yu Chang
  • Patent number: 11782195
    Abstract: A diffractive optical element and method for fabricating the diffractive optical element are provided. The diffractive optical element includes a substrate, a first diffractive structure layer and a second diffractive structure layer. The substrate has a first surface and a second surface opposite to the first surface. The first diffractive structure layer is disposed on the first surface of the substrate. The second diffractive structure layer is disposed on the second surface of the substrate. In the method for fabricating the diffractive optical element, at first, the substrate is provided. Then, a first glue material layer/first semiconductor layer is formed and patterned on the first surface of the substrate. Thereafter, a second glue material layer/second semiconductor layer is formed and patterned on the second surface of the substrate.
    Type: Grant
    Filed: September 30, 2019
    Date of Patent: October 10, 2023
    Assignee: HIMAX TECHNOLOGIES LIMITED
    Inventors: Chih-Sheng Chang, Meng-Ko Tsai, Chung-Kai Sheng
  • Patent number: 11774845
    Abstract: In a photomask blank including a transparent substrate and a first inorganic film containing either or both of a transition metal and silicon, and optional a second inorganic film containing either or both of a transition metal and silicon, when an intensity of secondary ions is measured in the thickness direction of the transparent substrate and the inorganic films by TOF-SIMS with using a primary ion source of Bi and a sputtering ion source of Cs, an intensity of secondary ions containing carbon detected at the interface of the transparent substrate and the inorganic film or the inorganic films is higher than both intensities of the secondary ions containing carbon detected, respectively, at the sides remote from the interface.
    Type: Grant
    Filed: June 22, 2021
    Date of Patent: October 3, 2023
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Kouhei Sasamoto, Hideo Kaneko