Abstract: New photoresist and topcoat compositions are provided that are useful in a variety of applications. In one aspect, new photoresist compositions are provided that comprise: (a) a first matrix polymer; (b) one or more acid generators; and (c) one or more additive compounds of Formulae (I) and/or (II).

Abstract: Provided is a resist underlayer film-forming composition for forming resist underlayer film usable as hard mask and removable by wet etching process using chemical solution such as sulfuric acid/hydrogen peroxide. A resist underlayer film-forming composition for lithography includes a component (A) and component (B), the component (A) includes a hydrolyzable silane, hydrolysis product thereof, or hydrolysis-condensation product thereof, the hydrolyzable silane includes hydrolyzable silane of Formula (1): R1aR2bSi(R3)4?(a+b) (where R1 is organic group of Formula (2): and is bonded to silicon atom through a Si—C bond; R3 is an alkoxy group, acyloxy group, or halogen group; is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3), and the component (B) is cross-linkable compound having ring structure having alkoxymethyl group or hydroxymethyl group, cross-linkable compound having epoxy group or blocked isocyanate group.

Abstract: A photosensitive composition includes a plurality of quantum dots including an organic ligand on the surface thereof; a binder; a photopolymerizable monomer composition; photoinitiator; and a solvent, wherein the photopolymerizable monomer includes a main monomer having 1 to 6 carbon-carbon double bonds, a first accessory monomer having 8 to 20 carbon-carbon double bonds, and a second accessory monomer represented by Chemical Formula A; and a method of preparing the photosensitive composition and a quantum dot-polymer composite pattern prepared therefrom are provided: R1O-(L1)m-L3-A-L4-(L2)n-OR2??Chemical Formula A wherein, A, L1, L2, L3, L4, R1, and R2 are the same as defined herein.

Abstract: A method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a polymer, a sensitizer, and a photo-acid generator (PAG), wherein the sensitizer includes a resonance ring that includes nitrogen and at least one double bond. The method further includes performing an exposing process to the photoresist layer. The method further includes developing the photoresist layer, thereby forming a patterned photoresist layer.

Abstract: In a method of forming a pattern, a photo resist layer is formed over an underlying layer, the photo resist layer is exposed to an actinic radiation carrying pattern information, the exposed photo resist layer is developed to form a developed resist pattern, a directional etching operation is applied to the developed resist pattern to form a trimmed resist pattern, and the underlying layer is patterned using the trimmed resist pattern as an etching mask.

Abstract: The present invention relates to a method for recording data in a layer of a ceramic material and to a device for recording data in a layer of a ceramic material.

Abstract: A method according to the present disclosure includes providing a substrate, depositing an underlayer over the substrate, depositing a photoresist layer over the underlayer, exposing a portion of the photoresist layer and a portion of the underlayer to a radiation source according to a pattern, baking the photoresist layer and underlayer, and developing the exposed portion of the photoresist layer to transfer the pattern to the photoresist layer. The underlayer includes a polymer backbone, a polarity switchable group, a cross-linkable group bonded to the polymer backbone, and photoacid generator. The polarity switchable group includes a first end group bonded to the polymer backbone, a second end group including fluorine, and an acid labile group bonded between the first end group and the second end group. The exposing decomposes the photoacid generator to generate an acidity moiety that detaches the second end group from the polymer backbone during the baking.

Abstract: A diffractive optical element and method for fabricating the diffractive optical element are provided. The diffractive optical element includes a substrate, a first diffractive structure layer and a second diffractive structure layer. The substrate has a first surface and a second surface opposite to the first surface. The first diffractive structure layer is disposed on the first surface of the substrate. The second diffractive structure layer is disposed on the second surface of the substrate. In the method for fabricating the diffractive optical element, at first, the substrate is provided. Then, a first glue material layer/first semiconductor layer is formed and patterned on the first surface of the substrate. Thereafter, a second glue material layer/second semiconductor layer is formed and patterned on the second surface of the substrate.

Abstract: In a photomask blank including a transparent substrate and a first inorganic film containing either or both of a transition metal and silicon, and optional a second inorganic film containing either or both of a transition metal and silicon, when an intensity of secondary ions is measured in the thickness direction of the transparent substrate and the inorganic films by TOF-SIMS with using a primary ion source of Bi and a sputtering ion source of Cs, an intensity of secondary ions containing carbon detected at the interface of the transparent substrate and the inorganic film or the inorganic films is higher than both intensities of the secondary ions containing carbon detected, respectively, at the sides remote from the interface.

Abstract: Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise that comprise a surface agent of the Formula (I). where A and B are each independently hydrogen, optionally substituted alkyl or optionally substituted aryl; X and Y are each independently hydrogen, optionally substituted alkyl or optionally substituted carbocyclic aryl; and n is a positive integer. Preferred coating compositions can provide improved pattern collapse margin of an overcoated photoresist layer.

Abstract: A method for manufacturing a reticle is provided. The method includes forming a first reflective multilayer over a mask substrate. The method also includes forming a capping layer over the first reflective ML. The method further includes depositing a first absorption layer over the capping layer. In addition, the method includes depositing an etch stop layer over the first absorption layer. The method also includes forming a second reflective multilayer (ML) over the etch stop layer. The method further includes forming a second absorption layer over the second reflective ML. In addition, the method includes forming an opening through the second absorption layer and the second reflective ML until the etch stop layer is exposed. The method also includes etching the etch stop layer and the first absorption layer through the opening until the capping layer is exposed.

Abstract: The present application relates to a method for producing a substrate which includes a step of exposing and developing a photosensitive resin composition layer formed on a surface of a substrate base layer to produce spacers. The method for producing a substrate of the present application can uniformly form spacers having a height according to a desired cell gap and can also freely control the height of the spacers.

Abstract: Techniques disclosed herein relate to holographic optical materials and elements. An example of a holographic recording material includes matrix monomers characterized by a first refractive index and configured to polymerize to form a polymer matrix, writing monomers dispersed in the matrix monomers and characterized by a second refractive index different from the first refractive index, and a photocatalyst for controlled radical polymerization of the writing monomers. The writing monomers are configured to polymerize upon exposed to recording light. The photocatalyst is dispersed in the matrix monomers. The photocatalyst includes, for example, a transition metal photocatalyst or a metal-free organic photocatalyst, such as a photocatalyst for atom transfer radical polymerization or a transition metal photocatalyst for addition fragmentation chain transfer polymerization.

Abstract: A method of manufacturing a reticle includes depositing an etch stop layer over a substrate; and depositing an absorber layer over the etch stop layer. The method further includes depositing a hard mask layer over the absorber layer, wherein the hard mask layer includes tantalum. The method includes patterning the hard mask layer. The method further includes performing a first etch process to remove a portion of the absorber layer underneath the patterned hard mask. The method includes performing a second etch process to partially remove a portion of a thickness of an etch stop layer underneath the removed portion of the absorber layer, wherein performing the third etch process comprises maintaining a remaining thickness of the etch stop layer underneath the removed portion of the absorber. The method further includes maintaining the remaining thickness of the etch stop layer through a termination of the method of manufacturing the reticle.

Abstract: The disclosure provides recording materials include fluorene derivatized monomers and polymers for use in volume Bragg gratings, including, but not limited to, volume Bragg gratings for holography applications. Several fluorene structures are disclosed: simply substituted fluorenes, cardo-fluorenes, and spiro-fluorenes. Fluorene derivatized polymers in Bragg gratings applications lead to materials with higher refractive index, low birefringence, and high transparency. Fluorene derivatized monomers/polymers can be used in any volume Bragg gratings materials, including two-stage polymer materials where a matrix is cured in a first step, and then the volume Bragg grating is written by way of a second curing step of a monomer.

Abstract: A resist underlayer film for lithography does not cause intermixing with a resist layer, has high dry etching resistance and high heat resistance, and generates a low amount of sublimate. A resist underlayer film-forming composition containing a polymer having a unit structure of the following formula (1): wherein A is a divalent group having at least two amino groups, the group is derived from a compound having a condensed ring structure and an aromatic group for substituting a hydrogen atom on the condensed ring, and B1 and B2 are each independently a hydrogen atom, an alkyl group, a benzene ring group, a condensed ring group, or a combination thereof, or B1 and B2 optionally form a ring with a carbon atom bonded to B1 and B2.

Abstract: A reflective mask blank includes, on/above a substrate in the following order from the substrate side a multilayer reflective film which reflects EUV light and an absorber film which absorbs EUV light. The absorber film is a tantalum-based material film containing a tantalum-based material. The absorber film provides a peak derived from the tantalum-based material in an X-ray diffraction pattern, the peak having a peak diffraction angle (2?) of 36.8 degrees or more and a full width at half maximum of 1.5 degrees or more.

Abstract: A method of testing a photomask assembly includes placing the photomask assembly into a chamber, wherein the photomask assembly includes a pellicle attached to a first side of a photomask. The method further includes exposing the photomask assembly to a radiation source having a wavelength ranging from about 160 nm to 180 nm in the chamber to accelerate haze development, wherein the exposing of the photomask assembly includes illuminating an entirety of an area of the photomask covered by the pellicle throughout an entire illumination time and illuminating a frame adhesive attaching the pellicle to the photomask. The method further includes detecting haze of the photomask following exposing the photomask assembly to the radiation source. The method further includes predicting performance of the photomask assembly during a manufacturing process based on the detected haze of the photomask following exposing the photomask assembly to the radiation source.

Abstract: The invention relates a method for producing a radiation-emitting component including a step A, in which a laser having an optical resonator and an output mirror is provided, wherein during the intended operation, laser radiation exits the optical resonator via the output mirror. In a step B), a photoresist layer is applied to the output mirror. In a step C), an optical structure is generated from the photoresist layer by means of a 3D lithography method, wherein the optical structure is designed to influence the beam path of the laser radiation by refraction and/or reflection.

Abstract: The present specification provides a compound, a photoresist composition comprising the same, a photoresist pattern comprising the same, and a method for preparing a photoresist pattern.