Abstract: A photo-mask and a semiconductor process are provided. The photo-mask includes a substrate and a non-printable pattern on the substrate. A pattern size of the non-printable pattern is smaller than a critical resolution of a lithography equipment using the photo-mask to perform a lithography process.

Abstract: A resist underlayer film for lithography has high solubility in a resist solvent (solvent used in lithography) for expressing good coating film forming property and a smaller selection ratio of dry etching rate as compared with a resist. A resist underlayer film-forming composition containing a novolac resin containing a structure (C) obtained by a reaction of an aromatic ring of an aromatic compound (A) with a hydroxy group-containing aromatic methylol compound (B). The aromatic compound (A) may be a component constituting the structure (C) in the novolac resin. The hydroxy group-containing aromatic methylol compound (B) may be a compound of Formula (1): The hydroxy group-containing aromatic methylol compound (B) may be 2-hydroxybenzyl alcohol, 4-hydroxybenzyl alcohol, or 2,6-di-tert-butyl-4-hydroxymethyl phenol.

Abstract: The present application discloses a display panel, a manufacturing method of a display panel and a mask used thereof. The manufacturing method of the display panel comprises the following steps: doping a photo-initiator in photoresist for manufacturing photo spacers; coating the photoresist on the substrates to form photo spacers, and arranging a shade on the same layer; and respectively irradiating corresponding photo spacers by at least two types of light rays of different wavelengths, to control the photo-initiator so as to enable different photo spacers to have different shrinkages.

Abstract: A halftone phase shift-type photomask blank including a transparent substrate, and a halftone phase shift film formed on the substrate, and including at least one layer composed of silicon, nitrogen and oxygen is provided. The halftone phase shift film has a phase shift of at least 150° and up to 200° and a transmittance of at least 20%, with respect to exposure light having a wavelength of up to 200 nm, and a film surface having a surface roughness RMS of up to 0.8 nm, and an in-plane variation of transmittance calculated from the maximum transmittance Tmax and the minimum transmittance Tmin within a mask pattern forming area by the expression: (Tmax?Tmin)/(Tmax+Tmin)×100 is up to 2%.

Abstract: The present invention is directed to a permanent photoimageable compositions and the cured products thereof useful for making negative-tone, permanent photoresist relief patterns on low surface energy polymer substrates, comprising: (A) one or more alkali soluble, film forming resins or one or more film forming resins that become soluble in alkali solutions by action of an acid, (B) one or more cationic photoinitiators, (C) one or more film casting solvents, and (D) one or more fluorinated compounds. The present invention is also directed to methods of forming a permanent photoresist relief pattern on a low surface energy polymer substrate using the disclosed compositions.

Abstract: A resist composition comprising a base polymer and an acid generator containing a sulfonium or iodonium salt of iodized benzamide group-containing fluorinated sulfonic acid offers a high sensitivity, minimal LWR and improved CDU independent of whether it is of positive or negative tone.

Abstract: A colored resin composition containing an alkali-soluble resin (A), a colorant (B), an organic solvent (C), and a photosensitizer (D), the colored resin composition containing at least a zirconia compound particle as the colorant (B), wherein the zirconia compound particle contains zirconium nitride having a crystallite size of 10 nm or more and 60 nm or less, and the crystallite size is determined from a half width of a peak derived from a (111) plane in an X-ray diffraction spectrum using a CuK? ray as an X-ray source. The present invention provides a highly sensitive colored resin composition by improving light transmissivity in the ultraviolet region (wavelength 365 nm) generally used in photolithography and by improving a light shielding property in the visible region.

Abstract: The present disclosure relates in one aspect to methods of preparing non-homogeneous polymer materials wherein light is used to control structure and/or composition. In certain embodiments, the present disclosure provides methods for creating gradient index optical elements including holographic elements.

Abstract: A resist composition is provided comprising (A) a metal compound having formula (A-1), a hydrolysate or hydrolytic condensate thereof, or the reaction product of the metal compound, hydrolysate or hydrolytic condensate thereof with a di- or trihydric alcohol having formula (A-2), and (B) a sensitizer containing a compound having formula (B-1). The resist composition is adapted to change a solubility in developer upon exposure to high-energy radiation, has high resolution and sensitivity, and forms a pattern of good profile with minimal edge roughness after exposure.

Abstract: The present invention provides a method for forming a patterned polyimide layer with the use of a positive photoresist composition. The composition comprises a cresol-type novolac resin, a diazonaphthoquinone-based sensitizer and an organic solvent; based on the cresol-type novolac resin with a total amount of 100 parts by weight, the amount of the diazonaphthoquinone-based sensitizer ranges from 40 parts to 60 parts by weight, the amount of the free cresol in the cresol-type novolac resin is lower than 2 parts by weight, and the alkaline dissolution rate (ADR) of the cresol-type novolac resin in an aqueous solution of 3.5 wt % to 7 wt % tetramethylammonium hydroxide is lower than 285 ?/s. The positive photoresist composition has excellent chemical resistance to the polyimide stripper, and can specifically improve the protective ability of the photoresist layer to the low-dielectric polyimide layer, thereby optimizing the manufacturing process and quality of the patterned polyimide layer.

Abstract: A resist composition comprising a base polymer and a sulfonium salt of a carboxylic acid having an iodine or bromine-substituted hydrocarbyl group offers a high sensitivity, minimal LWR and improved CDU, independent of whether it is of positive or negative tone.

Abstract: A photoresist composition and manufacturing method thereof, a manufacturing method of a metal pattern, and a manufacturing method of an array substrate are provided. The photoresist composition includes a base material and an ion adsorbent, and the ion adsorbent is chelating resin.

Abstract: There is provided resist underlayer film for lithography process with high dry etching resistance, wiggling resistance, and heat resistance. Resist underlayer film-forming composition for lithography including polymer having unit structure of Formula (1): wherein A is hydroxy group-substituted C6-40 arylene group derived from polyhydroxy aromatic compound; B is C6-40 arylene group or C4-30 heterocyclic group containing nitrogen atom, oxygen atom, sulfur atom, or combination thereof; X+ is H+, NH4+, primary ammonium ion, secondary ammonium ion, tertiary ammonium ion, or quaternary ammonium ion, T is hydrogen atom, C1-10 alkyl group or C6-40 aryl group that may be substituted with halogen group, hydroxy group, nitro group, amino group, carboxylate ester group, nitrile group, or combination thereof as substituent, or C4-30 heterocyclic group containing nitrogen atom, oxygen atom, sulfur atom, or combination thereof, B and T may form C4-40 ring together with carbon atom to which they are bonded.

Abstract: The present disclosure is to provide a photopolymer composition including a polymer matrix or a precursor thereof including a reaction product of a reactive isocyanate compound having a hydrogen bonding functional group capable of forming multiple hydrogen bonds and at least one isocyanate group, and a polyol having at least two hydroxyl groups; a photoreactive monomer; and a photoinitiator, a hologram recording medium produced from the photopolymer composition, an optical element including the photopolymer composition and a holographic recording method using the photopolymer composition.

Abstract: A holographic recording medium composition comprising component (e): a compound having an isocyanate group or an isocyanate-reactive functional group and further having a nitroxyl radical group, wherein component (e) contains component (e-1) below: component (e-1): a compound having a heterobicyclic ring structure or a heterotricyclic ring structure, the heterobicyclic ring structure or the heterotricyclic ring structure being obtained by replacing a carbon atom in a bicyclic ring structure or a tricyclic ring structure by the nitroxyl radical group.

Abstract: A negative resist composition comprising a polymer comprising recurring units having at least two acid-eliminatable hydroxyl or alkoxy groups in the molecule is effective for forming a resist pattern having a high resolution and minimal LER while minimizing defects.

Abstract: The present invention relates to a photoresist composition capable of realizing excellent pattern performance during formation of fine patterns, and of preparing a photoresist film that is excellent in chemical stability of a plating solution, and a photoresist film using the same.

Abstract: A substrate is provided with a patterned layer, for example, a photo resist layer, which may exhibit line roughness. In one exemplary embodiment, the patterned layer may be an extreme ultraviolet (EUV) photo resist layer. In one method, selective deposition of additional material is provided on the EUV photo resist layer after patterning to provide improved roughness and lithographic structure height to allow for more process margin when transferring the pattern to a layer underlying the photo resist. The additional material is deposited selectively thicker in areas above the photo resist than in areas where the photo resist is not present, such as exposed areas between the photo resist pattern. Pattern transfer to a layer underlying the photo resist may then occur (for example via an etch) while the patterned photo resist and additional material above the photo resist may collectively operate as an etch mask.

Abstract: A photomask mask assembly includes a reflective photomask and a protection structure. The reflective photomask includes a substrate and a reflective multilayer on a first substrate surface of the substrate at a front side of the reflective photomask. The protection structure is on a second substrate surface of the substrate at a backside of the reflective photomask, and is detachable from the reflective photomask at a temperature below 150 degree Celsius.

Abstract: A lithographic method for making an out-of-plane optical coupler includes forming a photoresist layer of positive photoresist material over a substrate. The positive photoresist layer undergoes a flood exposure to light through a binary mask to pattern a latent image of a mirror blank in the photoresist layer. A laser beam is scanned over the latent image of the mirror blank to apply controlled dosages of light at specified locations to form a latent image of a planar mirror surface that is oriented at a prescribed non-zero angle to a plane in which the substrate extends. The positive photoresist material is developed so that a remaining portion of the developed positive photoresist material forms an out-of-plane optical coupler having a planar mirror surface that is oriented at the prescribed angle.