Abstract: To provide a semiconductor device, a semiconductor laser, and a method of producing a semiconductor device that are capable of sufficiently ensuring electrical connection between a transparent conductive layer and a semiconductor layer. [Solving Means] A semiconductor device according to the present technology includes: a first semiconductor layer; a second semiconductor layer; an active layer; and a transparent conductive layer. The first semiconductor layer has a first conductivity type, a stripe-shaped ridge being formed on a surface of the first semiconductor layer. A second width is not less than 0.99 and not more than 1.0 times a first width, a third width is not less than 0.96 and not more than 1.

Abstract: An optical power supply system includes a first data communication device and a second data communication device. The first data communication device includes a power sourcing equipment device including a first semiconductor laser; and a first transmitter including a second semiconductor laser and a first modulator. The second data communication device includes a powered device comprising a photoelectric conversion element; a receiver; a data processing unit; and a second transmitter including a third semiconductor laser and a second modulator. The first data communication device and the second data communication device perform optical communication with each other. The electric power obtained by the conversion of the feed light by the photoelectric conversion element is driving power for the second transmitter and the receiver.

Abstract: An intermediate ultraviolet laser diode device includes a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material; a p-type gallium and nitrogen containing material; a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material; and an interface region overlying the first transparent conductive oxide material.

Abstract: Gaseous laser systems and related techniques are disclosed. Techniques disclosed herein may be utilized, in accordance with some embodiments, in providing a gaseous laser system with a configuration that provides (A) pump illumination with distinct edge surfaces for an extended depth and (B) an output beam illumination from a resonator cavity with distinct edges in its reflectivity profile, thereby providing (C) pump beam and output beam illumination on a volume so that the distinct edge surfaces of its pump and beam illumination are shared-edge surfaces with (D) further edge surfaces of the amplifier volume at the surfaces illuminated directly by the pump or output beams, as defined by optical windows and (optionally) by one or more flowing gas curtains depleted of the alkali vapor flowing along those optical windows. Techniques disclosed herein may be implemented, for example, in a diode-pumped alkali laser (DPAL) system, in accordance with some embodiments.

Abstract: Semiconductor structures and methods for forming the same are provided. The method includes forming a dummy gate structure over a substrate and forming a sealing layer surrounding the dummy gate structure. The method includes forming a spacer covering the sealing layer and removing the dummy gate structure to form a trench. The method further includes forming an interfacial layer and a gate dielectric layer. The method further includes forming a capping layer over the gate dielectric layer and partially oxidizing the capping layer to form a capping oxide layer. The method further includes forming a work function metal layer over the capping oxide layer and forming a gate electrode layer over the work function metal layer. In addition, a bottom surface of the capping oxide layer is higher than a bottom surface of the spacer.

Abstract: An acousto-optic Q switch, a resonant cavity, and a pulse laser device for improving laser device power. The acousto-optic Q switch includes: a transparent optical element configured to form a phase grating that diffracts laser; a piezoelectric transducer arranged at one end of the transparent optical element and configured to convert electrical energy into ultrasonic energy to form the phase grating in the transparent optical element; and an absorber arranged at the other end of the transparent optical element to absorb the ultrasonic energy.

Abstract: A fiber laser system based in solitonic passive mode-locking, including a laser diode to emit and deliver an optical signal of a first wavelength; a single-fiber laser cavity including a dichroic mirror, a SESAM and a polarization maintaining highly-doped active fiber, to receive the emitted signal and to emit a pulsed optical signal of a second wavelength, generating laser light in the form of mode-locked ultrashort pulses; a unit coupling the laser diode to the single-fiber laser cavity; and an isolator device protecting the cavity from back reflections. The solitonic mode-locked ultrashort pulses are comprised in a range of 100 fs<10 ps with repetition rates of hundreds MHz to tens of GHz.

Abstract: A light emitting device includes a base, a first semiconductor laser element, a second semiconductor laser element, a lens member, and a waveplate. The base has a bottom part. The first semiconductor laser element is disposed on the bottom part of the base. The second semiconductor laser element is disposed on the bottom part of the base. The second semiconductor laser element has a different polarization direction from a polarization direction of the first semiconductor laser element. The lens member is a member into which light beams from the first semiconductor element and the second semiconductor laser element enter. The waveplate is configured to change the polarization direction of light from the first semiconductor laser element.

Abstract: A method for manufacturing a GaN-based surface-emitting laser by an MOVPE includes: (a) growing a first cladding layer with a {0001} growth plane; (b) growing a guide layer on the first cladding layer; (c) forming holes in a surface of the guide layer by etching, the holes being two-dimensionally periodically arranged within a plane parallel to the guide layer; (d) etching the guide layer by using an etchant having selectivity to the {0001} plane and a {10?10} plane of the guide layer; (e) supplying a gas containing a nitrogen source to cause mass transport without supplying a group-III material gas, and then supplying the group-III material gas for growth, whereby a first embedding layer closing openings of the holes is formed to form a photonic crystal layer; and (f) growing an active layer and a second cladding layer in this order on the first embedding layer.

Abstract: In one example, an optoelectronic assembly may include a laser array, an amplifier array, and a multimode interference coupler optically coupling the laser array and the amplifier array. The laser array may include at least one primary laser and at least one spare laser configured to be activated if the primary laser fails. The amplifier array may include at least two amplifiers configured to amplify optical signals received from the laser array.

Abstract: A laser device based on silicon photonics with an in-cavity power monitor includes a gain chip mounted on a silicon photonics substrate and configured to emit light in an active region bounded between a frontend facet with low reflectivity and a backend facet with anti-reflective characteristics. The laser device further includes a wavelength tuner formed with waveguides in the silicon photonics substrate optically coupled to the backend facet to receive light from the gain chip and configured to have a reflector with high reflectivity to reflect the light in an extended cavity formed with the frontend facet through which a laser with a tuned wavelength and amplified power is outputted. Additionally, the laser device includes a photodiode formed in the silicon photonics substrate and coupled to the waveguides in the extended cavity right in front of the reflector to measure power of light thereof.

Abstract: A sensing method for in-situ non-perturbing measurement of characteristics of laser beams at the exit of the laser beam delivery fiber tips include measuring power of a laser beam transmitted through delivery fiber tip in fiber-optics systems. A sensing devices for in-situ non-perturbing sensing and control of multiple characteristics of laser light transmitted through light delivery fiber tips includes a fiber-tip coupler comprised of a shell with enclosed delivery fiber having a specially designed angle-cleaved endcap and one or several tap fibers that are specially arranged and assembled at back side of the endcap and other variations. Methods and system architectures for in-situ non-perturbing control of characteristics of laser beams at the exit of the laser beam delivery fiber tips include fiber-tip couplers and sensing modules that receive laser light from tap fibers, and systems for optical processing to enhance light characteristics suitable for in-situ measurement.

Abstract: Apparatuses and methods are disclosed for applying laser energy having desired pulse characteristics, including a sufficiently short duration and/or a sufficiently high energy for the photomechanical treatment of skin pigmentations and pigmented lesions, both naturally-occurring (e.g., birthmarks), as well as artificial (e.g., tattoos). The laser energy may be generated with an apparatus having a resonator with a sub-nanosecond round trip time.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming a vertical cavity surface emitting laser (VCSEL) device. The method includes forming a bond bump and a bond ring over a substrate. A semiconductor die is bonded to the bond ring. A molding layer is formed around the semiconductor die. The molding layer is laterally offset from a cavity between the semiconductor die and the substrate. A VCSEL structure is formed over the bond bump.

Abstract: In a laser system according to a viewpoint of the present disclosure, a first amplifier amplifies first pulsed laser light outputted from a first semiconductor laser system into second pulsed laser light, a wavelength conversion system converts the second pulsed laser light in terms of wavelength into third pulsed laser light, and an excimer amplifier amplifies the third pulsed laser light. The first semiconductor laser system includes a first current controller that controls current flowing through a first semiconductor laser in such a way that first laser light outputted from the first semiconductor laser is caused to undergo chirping and a first semiconductor optical amplifier that amplifies the first laser light into pulsed light. The laser system includes a control section that controls the amount of chirping performed on the first pulsed laser light in such a way that excimer laser light having a target spectral linewidth is achieved.

Abstract: A method of pulse shaping using spectral filtering, positive chirp, and self-phase modulation to control the accumulated higher-order phase terms of the spectral phase. This pulse shaping method has particular advantage in fiber chirped pulse amplification (FCPA) systems, where there are two effects: (1) an offsetting of the fourth order phase via nonlinear phase accumulation, allowing for a higher Strehl ratio (i.e., a cleaner pulse), higher peak power pulse and (2) enabling power scaling to higher pulse energies without the increased nonlinear phase accumulation leading to pulse breakup. This technique can be used both in a passive system with no amplification to clean up an existing pulse, and in an amplifier system to enable higher performance operation (shorter pulses, cleaner pulses, higher energy pulses).

Abstract: A first data communication device includes a first semiconductor laser for oscillating with electric power, and outputting feed light to a powered device of a second data communication device; a second semiconductor laser for first signals; a first modulator for modulating first laser light output by the second semiconductor laser to first signal light and outputting the first signal light to the second data communication device; and an optical receiver. The second data communication device includes the powered device having a photoelectric conversion element for converting the feed light into the electric power, a third semiconductor laser for second signals, and a second modulator for modulating second laser light output by the third semiconductor laser to second signal light and outputting the second signal light to the first data communication device. The optical receiver receives and converts the second signal light into an electrical signal corresponding to transmission data.

Abstract: An optically pumped tunable VCSEL swept source module has a VCSEL and a pump, which produces light to pump the VSCEL, wherein the pump is geometrically isolated from the VCSEL. In different embodiments, the pump is geometrically isolated by defocusing light from the pump in front of the VCSEL, behind the VCSEL, and/or by coupling the light from the pump at an angle with respect to the VCSEL. In the last case, angle is usually less than 88 degrees. There are further strategies for attacking pump noise problems. Pump feedback can be reduced through (1) Faraday isolation and (2) geometric isolation. Single frequency pump lasers (Distributed feedback lasers (DFB), distributed Bragg reflector lasers (DBR), Fabry-Perot (FP) lasers, discrete mode lasers, volume Bragg grating (VBG) stabilized lasers can eliminate wavelength jitter and amplitude noise that accompanies mode hopping.

Abstract: A method and a system for controlling an output of an optical system, the method comprising generating a plurality of optical signal components having different optical properties and passing the generated optical signal components as input to an optical system comprising an optical device and/or an optical medium; an output of the optical system being based on interactions of the signal components within the optical device and/or the optical medium; and relative proportions of the optical signal components that are generated and individual optical properties thereof being selected to control the output of the optical system.

Abstract: Laser diode technology incorporating etched facet mirror formation and optical coating techniques for reflectivity modification to enable ultra-high catastrophic optical mirror damage thresholds for high power laser diodes.