Abstract: A method and apparatus provide for determining a temperature at a junction of a laser diode when the laser diode is operated in a lasing state that facilitates heat-assisted magnetic recording, comparing the junction temperature and an injection current supplied during the lasing state to stored combinations of junction temperature and injection current, and determining a likelihood of mode hopping occurring for the laser diode during the lasing state based on the comparison to stored combinations of junction temperature and injection current.

Abstract: A light source device includes at least one first wiring, a plurality of second wirings, a plurality of light emitting elements each having a lower-surface-side electrode connected to a respective one of the at least one first wiring, a plurality of protective elements each having a lower-surface-side electrode connected to a respective one of the plurality of second wirings each corresponding to a respective one of the plurality of light emitting elements, each of the plurality of protective elements connected to a respective one of the plurality of light emitting elements, a plurality of first wirings each connecting an upper-surface-side electrode of each of the plurality of light emitting elements and a respective one of the plurality of second wirings, a plurality of second wires each connecting the upper-surface-side electrodes of two adjacent ones of the protective elements; and a plurality of third wires each connecting an upper-surface-side electrode of a respective one of the plurality of protective

Abstract: Apparatuses and methods are disclosed for applying laser energy having desired pulse characteristics, including a sufficiently short duration and/or a sufficiently high energy for the photomechanical treatment of skin pigmentations and pigmented lesions, both naturally-occurring (e.g., birthmarks), as well as artificial (e.g., tattoos). The laser energy may be generated with an apparatus having a resonator with a sub-nanosecond round trip time.

Abstract: An edge emitting laser bar is disclosed. In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer configured to generate laser radiation, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, each emitter configured to emit laser radiation and a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, each contact element being assigned to an individual emitter, wherein each contact element is electrically conductively coupled to the semiconductor layer sequence via a contiguous contact region of the contact side so that a current flow between the semiconductor layer sequence and the contact element is possible via the contact region.

Abstract: A Cu—Si—Cu substrate having a silicon substrate, copper plating on opposite sides of the silicon substrate, and copper vias extending thru the silicon substrate to electrically and thermally connect the copper platings together. The thicknesses of the silicon substrate and the copper platings are selected so that a coefficient of thermal expansion (CTE) of the Cu—Si—Cu substrate is substantially the same as a CTE of a material to be mounted on the Cu—Si—Cu substrate.

Abstract: In a first embodiment, an external cavity tunable laser, comprising a silicon photonics circuit comprising one or more resonators having one or more p-i-n junctions; wherein a voltage is applied to one or more of the p-i-n junctions. In a second embodiment, a method of operating an external cavity tunable laser, comprising sweeping out free-carriers from a resonator of the tunable laser by applying a voltage to a p-i-n junction of a waveguide of the resonator.

Abstract: A device and a method for measuring thermal load caused by excited state absorption in laser gain crystal are disclosed. Thermal focal lengths on the tangential and sagittal planes of the laser gain crystal are obtained by obtaining the threshold when the pump power is decreased, the optimal operating point, and cavity parameters of the single-frequency laser. Individual ABCD matrices of the laser gain crystal on the tangential plane and the sagittal plane are obtained based on thermal focal length.

Abstract: A fiber optic voltage conditioner, and method therefor, generally relate to voltage conditioning. In such a fiber optic voltage conditioner, there is a laser, and an optical circulator is coupled to receive a light signal from the laser. A controller is coupled to the laser and is configured to generate first control information for wavelength-drift control of the laser. A data acquisition module is coupled to the controller and is configured to generate second control information for the controller for adjustment of the first control information. A photodetector is coupled to the optical circulator to receive a returned optical signal and is coupled to the data acquisition module to provide an analog output signal thereto. The photodetector is configured to generate the analog output signal responsive to the returned optical signal. The data acquisition module is configured to generate the second control information using the analog output signal.

Abstract: A sensing method for in-situ non-perturbing measurement of characteristics of laser beams at the exit of the laser beam delivery fiber tips include measuring power of a laser beam transmitted through delivery fiber tip in fiber-optics systems. A sensing devices for in-situ non-perturbing sensing and control of multiple characteristics of laser light transmitted through light delivery fiber tips includes a fiber-tip coupler comprised of a shell with enclosed delivery fiber having a specially designed angle-cleaved endcap and one or several tap fibers that are specially arranged and assembled at back side of the endcap and other variations. Methods and system architectures for in-situ non-perturbing control of characteristics of laser beams at the exit of the laser beam delivery fiber tips include fiber-tip couplers and sensing modules that receive laser light from tap fibers, and systems for optical processing to enhance light characteristics suitable for in-situ measurement.

Abstract: A pulsed signal generator generates a pulsed signal having a pulse width intended to be equal to a given fraction of a pulse width of a reference clock. A reference current source outputs current having a reference magnitude, and a comparison current source outputs current having a magnitude that is a function of the reference magnitude and the given fraction. A comparison circuit compares a total current output by one of the reference current source and the comparison current source during pulses of the reference clock to a total current output by the other of the reference current source and the comparison current source during pulses of the pulsed signal equal in number to the pulses of the reference clock in order to determine whether the pulse width of the pulse signal is less than or equal to the given fraction of the pulse width of the reference clock.

Abstract: An intermediate ultraviolet laser diode device includes a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material; a p-type gallium and nitrogen containing material; a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material; and an interface region overlying the first transparent conductive oxide material.

Abstract: A fiber laser system based in solitonic passive mode-locking, including a laser diode to emit and deliver an optical signal of a first wavelength; a single-fiber laser cavity including a dichroic mirror, a SESAM and a polarization maintaining highly-doped active fiber, to receive the emitted signal and to emit a pulsed optical signal of a second wavelength, generating laser light in the form of mode-locked ultrashort pulses; a unit coupling the laser diode to the single-fiber laser cavity; and an isolator device protecting the cavity from back reflections. The solitonic mode-locked ultrashort pulses are comprised in a range of 100 fs<10 ps with repetition rates of hundreds MHz to tens of GHz.

Abstract: A laser device is provided that includes an element made of laser-active material and a cladding element bonded to the element so as to allow heat exchange by heat conduction between the cladding element and the element. The laser-active material emitting laser light when excited by pump light. The element being made of a glass. The cladding element being made of a material that exhibits an absorption coefficient for the pump light that is lower than a corresponding absorption coefficient of the glass. The element and cladding element being configured so that the pump light can be directed through the cladding element into the element and/or so that the pump light can be directed through the element into the cladding element.

Abstract: A laser system includes: a laser light source; a light detector configured to output an electric current proportional to an output laser light of the laser light source; a resistor network configured to convert the electric current output from the light detector to a monitor voltage; and a regulator configured to control an intensity of the output laser light based on a comparison between the monitor voltage and a voltage corresponding to a control target value, wherein the resistor network comprises at least two branch circuits connected in parallel with each other, and the branch circuits include respective digital potentiometer circuits commonly formed in a single device.

Abstract: The present disclosure relates to an optical waveguide system. The system has a first waveguide having a core-guide and a cladding material portion surrounding and encasing the core-guide to form a substantially D-shaped cross sectional profile with an exposed flat section running along a length thereof. The core-guide enables a core-guide mode for an optical pulse signal having a first characteristic, travelling through the core-guide. A material layer of non-linear material is used which forms a second waveguide. The material layer is disposed on the exposed flat section of the cladding material portion. The material layer forms a plasmonic device to achieve a desired coupling with the core-guide to couple optical energy travelling through the core-guide into the material layer to modify the optical energy travelling through the core-guide such that the optical energy travelling through the core-guide has a second characteristic different from the first characteristic.

Abstract: A device for generating laser radiation comprises a temperature-controlled optical setup comprising an optically non-linear solid state medium arranged in a resonator and an active region. The outgoing laser radiation is generated from a pump beam introduced into the optically non-linear solid state medium. A first temperature actuator and a second temperature actuator configured to independently adjust temperature values in the active region of the optically non-linear solid state medium. The first temperature actuator is configured regulate a length of the resonator by setting a first temperature value within a first portion of the active region. The second temperature actuator is configured to match phases of wavelengths generated by the outgoing laser radiation and phases of wavelengths of the pump beam radiation by setting a second temperature value within a second portion of the active region.

Abstract: A method for preparing an erbium (Er)- or erbium oxygen (Er/O)-doped silicon-based luminescent material emitting a communication band at room temperature. The method comprising the following steps: (a) doping a single crystalline silicon wafer with erbium ion implantation or co-doping the single crystalline silicon wafer with erbium ion and oxygen ion implantation simultaneously to obtain an Er- or Er/O-doped silicon wafer, wherein the single crystalline silicon wafer is a silicon wafer with a germanium epitaxial layer, or an SOI silicon wafer with silicon on an insulating layer or other silicon-based wafers; and (b) subjecting the Er- or Er/O-doped silicon wafer to a deep-cooling annealing treatment, the deep-cooling annealing treatment includes a temperature increasing process and a rapid cooling process.

Abstract: A spectral interference height detecting apparatus includes a chuck table for holding a workpiece thereon and a height detecting unit for detecting the height of an upper surface of the workpiece held on the chuck table. The height detecting unit includes a light source for emitting light in a predetermined wavelength band into a first optical path, a condenser disposed in the first optical path for converging light onto the workpiece held on the chuck table, a beam splitter disposed between the light source and the condenser for splitting the light in the first optical path into a second optical path, a mirror disposed in the second optical path to form a basic optical path length, for reflecting light into the second optical path and returning light through the beam splitter to the first optical path.

Abstract: Semiconductor structures and method for forming the same are provided. The method for manufacturing the semiconductor structure includes forming a first gate dielectric layer over a substrate and forming a first capping layer over the first gate dielectric layer. The method for manufacturing the semiconductor structure includes oxidizing the first capping layer to form a first capping oxide layer and forming a first work function metal layer over the first capping oxide layer. The method for manufacturing the semiconductor structure includes forming a first gate electrode layer over the first work function metal layer.

Abstract: Systems and methods for a self-injection locked SBS laser are provided herein. In certain embodiments, a system includes a pump laser source providing a pump laser; an SBS resonator receiving the pump laser through a first port and scattering some of the pump laser to provide an SBS laser through the first port, wherein a frequency shift of Brillouin scattering within the SBS resonator is an integer multiple of a free-spectral range for the SBS resonator; a filter receiving the pump laser on a first filter port and the SBS laser on a second filter port, wherein the pump laser is output through the second filter port and the SBS laser is output through a drop port; and a pump laser path coupling the output pump laser into the pump laser source, wherein a frequency of the pump laser becomes locked to a resonance frequency of the SBS resonator.