Patents Examined by Michael G Miller
  • Patent number: 12139786
    Abstract: A method of coating a component includes attaching the component to a support that is configured to hold a plurality of components and placing a base of the support in a holder that is attached to rotatable member of a fixture, wherein an axis of the holder is parallel to an axis of rotation of the rotatable member. The method also includes transporting the fixture into a coating chamber wherein a direction of an exit stream of a coater in oriented perpendicularly to the axis of rotation, exposing the fixture and the component to a reverse transfer arc cleaning/pre-heating procedure, and exposing the fixture and the component to a coating procedure during which a coating is directed at the component in a direction perpendicular to the axis of rotation while the rotatable member is rotating. The method further includes transporting the fixture and removing the component from the support fixture.
    Type: Grant
    Filed: March 2, 2022
    Date of Patent: November 12, 2024
    Assignee: RTX CORPORATION
    Inventors: Frank J. Trzcinski, Scott A. Elliott, Andrew Cervoni
  • Patent number: 12129546
    Abstract: In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments herein relate to cyclical processes for gap-fill in which deposition is followed by a thermal anneal and repeated. In some embodiments, the deposition and thermal anneal are carried out in separate station. In some embodiments second module is heated to a higher temperature than the first station. In some embodiments, the thermal anneal comprises RTA.
    Type: Grant
    Filed: October 18, 2021
    Date of Patent: October 29, 2024
    Assignee: ASM IP Holding B.V.
    Inventors: Shinya Yoshimoto, Takahiro Onuma, Makoto Igarashi, Yukihiro Mori, Hideaki Fukuda, Rene Henricus Jozef Vervuurt, Timothee Blanquart
  • Patent number: 12116321
    Abstract: A method for applying a surface treatment to a plugged honeycomb body comprising porous wall includes: mixing particles of an inorganic material with a liquid vehicle and a binder material to form a liquid-particulate-binder stream; mixing the liquid-particulate-binder stream with an atomizing gas, directing the liquid-particulate-binder stream into an atomizing nozzle thereby atomizing the particles into liquid-particulate-binder droplets comprised of the liquid vehicle, the binder material, and the particles; conveying the droplets toward the plugged honeycomb body by a gaseous carrier stream, wherein the gaseous carrier stream comprises a carrier gas and the atomizing gas; evaporating substantially all of the liquid vehicle from the droplets to form agglomerates comprised of the particles and the binder material; depositing the agglomerates onto the porous walls of the plugged honeycomb body; wherein the deposited agglomerates are disposed on, or in, or both on and in, the porous walls.
    Type: Grant
    Filed: August 30, 2019
    Date of Patent: October 15, 2024
    Assignee: Corning Incorporated
    Inventors: Mark Alan Lewis, Cai Liu, Dale Robert Powers, Todd Parrish St Clair, Jianguo Wang, Huiqing Wu, Fei Xia, Xinfeng Xing, Danhong Zhong
  • Patent number: 12116663
    Abstract: A method for solvent-free perovskite deposition. The method comprises loading a lead target and one or more samples adhered to a substrate holder into a deposition chamber, pumping down to a high vacuum pressure, and backfilling the deposition chamber with the vapor of a salt precursor to form a perovskite material.
    Type: Grant
    Filed: April 17, 2020
    Date of Patent: October 15, 2024
    Assignee: CubicPV Inc.
    Inventors: Michael D. Irwin, Marissa Higgins, David W. Miller
  • Patent number: 12114488
    Abstract: Methods of forming memory devices are described. A molybdenum silicide nucleation layer is formed, and the substrate is soaked in a titanium precursor prior to a bulk molybdenum gap fill process. In other embodiments, a molybdenum silicide film is formed in a first process cycle and a second process cycle is performed where the substrate is exposed to a titanium precursor. In further embodiments, a substrate having at least one feature thereon is exposed to a first titanium precursor and a nitrogen-containing reactant. The substrate is then soaked in a second titanium precursor, and then is exposed to a first molybdenum precursor followed by exposure to a silane to form a molybdenum silicide layer on a surface of the substrate.
    Type: Grant
    Filed: May 5, 2021
    Date of Patent: October 8, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Yong Yang, Kunal Bhatnagar, Srinivas Gandikota, Seshadri Ganguli, Jose Alexandro Romero, Mandyam Sriram, Mohith Verghese, Jacqueline S. Wrench, Yixiong Yang
  • Patent number: 12104250
    Abstract: The present disclosure relates to methods for depositing an elemental metal or semimetal-containing material on a substrate by a cyclic deposition process, to an elemental metal or semimetal-containing layer, to a semiconductor structure and a device, and to deposition assemblies for depositing elemental metal or semimetal-containing material on a substrate. A method according to the current disclosure comprises providing a substrate in a reaction chamber, providing a metal or a semimetal precursor to the reaction chamber in a vapor phase, and providing a reducing agent into the reaction chamber in a vapor phase to form elemental metal or semimetal-containing material on the substrate. The reducing agent according to the method comprises a cyclohexadiene compound selected from compounds comprising a germanium-containing substituent.
    Type: Grant
    Filed: August 26, 2022
    Date of Patent: October 1, 2024
    Assignee: ASM IP Holding B.V.
    Inventors: Timo Hatanpää, Anton Vihervaara, Mikko Ritala
  • Patent number: 12105252
    Abstract: A thin film forming method includes: attaching a mixture of a dielectric material and a fluorocarbon resin as a first layer on a substrate; and thereafter attaching only a dielectric material as a second layer on the first layer to form a two-layer thin film on the substrate. The method is capable of manufacturing a thin film whose production is easy and costs low, whose substances attached by vapor deposition or the like do not easily suffer cracking, peeling, breakage, and so on, and in which a low refractive index is achieved in a wide band by freely controlling its packing ratio.
    Type: Grant
    Filed: July 26, 2019
    Date of Patent: October 1, 2024
    Assignees: OKAMOTO OPTICS, INC.
    Inventors: Kunio Yoshida, Takayuki Okamoto
  • Patent number: 12097719
    Abstract: The invention relates to a process for marking an optical eyeglass (1) equipped with a surface coating (5) comprising the following steps: A step of detreating by means of a laser beam, so as to locally detreat an area of the optical eyeglass by removing the surface coating (5) until a lower layer (7) of the eyeglass (1) is reached, which layer is located under said coating (5) and made of a material that is different from the surface coating (5), thus forming at least one the detreated zone (6, 11), A step of depositing an ink (9) in the detreated zone (6, 11) in order to form at least one inked pattern (4), so that the ink (9) adheres to the lower layer (7) present at the bottom (10) of the detreated zone (6, 11).
    Type: Grant
    Filed: July 6, 2017
    Date of Patent: September 24, 2024
    Assignee: Essilor International
    Inventors: Sebastien Maurice, Pamela McClimans, Luc Martin, Mark Hale
  • Patent number: 12091748
    Abstract: The present invention relates to a ruthenium thin film-forming method for forming a ruthenium thin film using a ruthenium precursor, in which tricarbonyl (?4-methylene-1,3-propanediyl) ruthenium ((CO)3Ru-TMM)) having a structure represented by the following formula 1 is used as the ruthenium precursor, and the method includes a stage of forming a ruthenium thin film by an atomic layer deposition at a temperature ranging from 200° C. to 350° C. using this ruthenium precursor and a reaction gas. As the reaction gas, one or more selected from the group consisting of oxygen, hydrogen, water and ammonia are preferably applied.
    Type: Grant
    Filed: July 29, 2021
    Date of Patent: September 17, 2024
    Assignees: RESEARCH COOPERATION FOUNDATION OF YEUNGNAM UNIVERSITY, TANAKA KIKINZOKU KOGYO K.K.
    Inventors: Soo-Hyun Kim, Yohei Kotsugi
  • Patent number: 12091739
    Abstract: A method for continuously depositing, on a running substrate, coatings formed from at least one metal inside a vacuum deposition facility including a vacuum chamber, a coated substrate coated with at least one metal and a vacuum deposition facility for the method for continuously depositing on a running substrate.
    Type: Grant
    Filed: April 23, 2019
    Date of Patent: September 17, 2024
    Assignee: ArcelorMittal
    Inventors: Eric Silberberg, Sergio Pace, Remy Bonnemann
  • Patent number: 12077858
    Abstract: Described herein are methods of filling features with tungsten and related apparatus. The methods described herein involve deposition of a tungsten nucleation layer prior to deposition of a bulk layer. The methods involve multiple atomic layer deposition (ALD) cycles. According to various embodiments, both a boron-containing reducing agent and silicon-reducing agent may be pulses during a single cycle to react with a tungsten-containing precursor and form a tungsten film.
    Type: Grant
    Filed: August 10, 2020
    Date of Patent: September 3, 2024
    Assignee: Lam Research Corporation
    Inventors: Pragna Nannapaneni, Novy Tjokro, Sema Ermez, Ruopeng Deng, Tianhua Yu, Xiaolan Ba, Sanjay Gopinath
  • Patent number: 12077859
    Abstract: Methods and apparatuses for depositing approximately equal thicknesses of a material on at least two substrates concurrently processed in separate stations of a multi-station deposition apparatus are provided.
    Type: Grant
    Filed: January 28, 2022
    Date of Patent: September 3, 2024
    Assignee: Lam Research Corporation
    Inventors: Ishtak Karim, Kiyong Cho, Adrien LaVoie, Jaswinder Guliani, Purushottam Kumar, Jun Qian
  • Patent number: 12071684
    Abstract: A method can include vapor depositing a corrosion resistant coating to internal and external surfaces of a metallic air data probe. For example, vapor depositing can include using atomic layer deposition (ALD). The method can include placing the metallic air data probe in a vacuum chamber and evacuating the vacuum chamber before using vapor deposition. The corrosion resistant coating can be or include a ceramic coating. In certain embodiments, vapor depositing can include applying a first precursor, then applying a second precursor to the first precursor to form the ceramic coating.
    Type: Grant
    Filed: March 20, 2023
    Date of Patent: August 27, 2024
    Assignee: ROSEMOUNT AEROSPACE INC.
    Inventors: Steven Poteet, Marc E. Gage, Blair A. Smith
  • Patent number: 12065737
    Abstract: Low to moderate temperature vapor deposition processes are provided for the deposition of silicon-based thin films, such as silicon nitride films, silicon carbonitride films, silicon oxide films, and silicon films. The processes includes in a single cycle, heating a substrate to a predetermined temperature; providing a precursor containing an N-alkyl substituted perhydridocyclotrisilazane in the vapor phase to a reaction zone containing the substrate, forming a monolayer of the precursor by adsorption to the substrate surface, and exposing the adsorbed monolayer on the substrate in the reaction zone to a remote or direct soft plasma of a co-reactant. The adsorbed precursor monolayer reacts with the soft plasma and undergoes conversion to a discrete atomic or molecular layer of a silicon-based thin film via dissociation and/or decomposition due to or enabled by a substrate surface-induced process. The cycle is then repeated to form a silicon-based thin film of a desired thickness.
    Type: Grant
    Filed: May 26, 2021
    Date of Patent: August 20, 2024
    Assignee: GELEST, INC.
    Inventors: Alain E. Kaloyeros, Barry C. Arkles
  • Patent number: 12065739
    Abstract: The present disclosure relates to methods and apparatuses for depositing transition metal-containing material on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a transition metal precursor into the reaction chamber in a vapor phase; and providing a second precursor into the reaction chamber in a vapor phase to form transition metal-containing material on the substrate. The transition metal precursor according to the disclosure comprises a transition metal halide compound comprising an organic phosphine adduct ligand.
    Type: Grant
    Filed: August 26, 2022
    Date of Patent: August 20, 2024
    Assignee: ASM IP Holding B.V.
    Inventors: Timo Hatanpää, Anton Vihervaara, Mikko Ritala
  • Patent number: 12065738
    Abstract: A method of making thin films of sodium fluorides and their derivatives by atomic layer deposition (“ALD”). A sodium precursor is exposed to a substrate in an ALD reactor. The sodium precursor is purged, leaving the substrate with a sodium intermediate bound thereon. A fluorine precursor is exposed to the bound sodium intermediate in the ALD reactor. The fluorine precursor is purged and a sodium fluoride film is formed on the substrate.
    Type: Grant
    Filed: October 22, 2021
    Date of Patent: August 20, 2024
    Assignees: UCHICAGO ARGONNE, LLC, BOISE STATE UNIVERSITY
    Inventors: Anil U. Mane, Jeffrey W. Elam, Donghyeon Kang, Sara Kuraitis, Elton Graugnard
  • Patent number: 12054433
    Abstract: Disclosed are techniques and methods for producing silicon carbide and ceramic matrix composites from hydrocarbons. In one aspect, a method includes preforming a shape using silicon carbide fibers placed into a chamber, evacuating the chamber causing a silicon and polymer slurry to enter the chamber, and pressurizing the chamber causing the silicon and polymer slurry to permeate the silicon carbide fibers. The method includes heating the chamber to cause pyrolysis of the polymer and a hydrocarbon passed into the chamber into carbon and hydrogen gas. The carbon from the pyrolyzed polymer and hydrocarbon provide a coating of carbon on the silicon in the silicon and polymer slurry. The method includes heating the chamber to a higher temperature causing the silicon to melt and react with the carbon to form silicon carbide. The formed silicon carbide and the silicon carbide fibers form the ceramic matrix composite.
    Type: Grant
    Filed: September 11, 2020
    Date of Patent: August 6, 2024
    Assignee: General Atomics
    Inventors: Jiping Zhang, Austin Travis, Jonas Opperman, George Jacobsen
  • Patent number: 12054438
    Abstract: A method of producing a melt infiltrated ceramic matrix composite (CMC) article that includes the steps of: forming a ceramic fiber preform; optionally, rigidizing the ceramic fiber preform with a fiber interphase coating via a Chemical Vapor Infiltration (CVI) process, infiltrating a ceramic slurry into the porous body or preform, conducting one or more secondary operations, and finally, melt infiltrating the preform with molten silicon or a silicon alloy to form the CMC article. The infiltration of a ceramic slurry into a ceramic fiber preform to form a green body is performed along with the use of convection and/or conduction as heat transfer mechanisms, such that the ceramic slurry does not require the incorporation of a pre-gelation material in order for the slurry to remain within the green body during subsequent processing steps.
    Type: Grant
    Filed: August 28, 2020
    Date of Patent: August 6, 2024
    Assignee: Rolls-Royce High Temperature Composites, Inc.
    Inventors: Camila S. Bortoluzzi, Sungbo Shim
  • Patent number: 12049093
    Abstract: A screen-printing screen for printing electrically conductive patterns on glass sheets, includes a main mask, the aperture size of the main mask being larger in a lateral portion than in the central portion, the screen furthermore including, in at least one double-mask zone, located in the central portion, at least one secondary mask fastened to a face of the main mask, the aperture size of the or each secondary mask being larger than the aperture size of the main mask in the central portion, and the mesh of the or each secondary mask making, with the mesh of the main mask, an angle ? comprised between 1 and 89°.
    Type: Grant
    Filed: June 15, 2018
    Date of Patent: July 30, 2024
    Assignee: SAINT-GOBAIN GLASS FRANCE
    Inventors: André Beyrle, Samuel Lepretre
  • Patent number: 12040181
    Abstract: Methods and apparatuses for depositing thin films using long and short conversion times during alternating cycles of atomic layer deposition (ALD) are provided herein. Embodiments involve alternating conversion duration of an ALD cycle in one or more cycles of a multi-cycle ALD process. Some embodiments involve modulation of dose, purge, pressure, plasma power or plasma energy in two or more ALD cycles.
    Type: Grant
    Filed: July 3, 2019
    Date of Patent: July 16, 2024
    Assignee: Lam Research Corporation
    Inventors: Chan Myae Myae Soe, Chloe Baldasseroni, Shiva Sharan Bhandari, Pulkit Agarwal, Adrien LaVoie, Bart J. van Schravendijk