Patents Examined by Michael L. Lebentritt
  • Patent number: 10975879
    Abstract: A centrifugal fan is formed from an impeller installed within a casing. The impeller is formed from two plates that are interconnected by a plurality of blades. A duct extends through each blade. At each of its ends, the duct opens at one of the plates. Air enters the fan from through a central opening formed in one of the plates, moves to a medial zone between the plates, and exits the fan at the medial zone's unwalled periphery. Air also crosses the fan by way of the ducts formed within each blade.
    Type: Grant
    Filed: July 17, 2019
    Date of Patent: April 13, 2021
    Assignee: The Charles Machine Works, Inc.
    Inventors: Tyler J. Stanley, Blaine S. Talbot, Matthew L. Lemmons, Thomas Howard Mertz
  • Patent number: 5874329
    Abstract: The present invention comprises a method for controlling a threshold voltage through a semiconductor substrate of a first conductivity type (the type being an n- or p- type in a MOSFET) without the need for a blanket implant for either long or short channel devices. A gate structure having opposed lateral edges is formed adjacent a surface of the semiconductor substrate and over a channel region of the substrate. The substrate is rotated around a rotation axis normal to the surface of the substrate to a first rotation position. Ions of a first conductivity type are then implanted into the channel region, using the gate structure as a mask, at an oblique angle relative to the surface normal of the substrate. The substrate is then rotated to a second rotation position approximately 180 degrees from the first rotation position. Ions of the first conductivity type are then implanted into the channel region, using the gate structure as a mask, at the oblique angle relative to the surface of the substrate.
    Type: Grant
    Filed: December 5, 1996
    Date of Patent: February 23, 1999
    Assignee: LSI Logic Corporation
    Inventors: Paul Neary, Lindor E. Henrickson
  • Patent number: 5804464
    Abstract: A fabrication method including a semiconductor chip kerf clear process and a resulting semiconductor chip and electronic module formed thereby. The fabrication method includes providing a wafer comprising a plurality of integrated circuit chips having kerf regions between them. Chip metallization is present within the kerf regions. A photolithography process is used to protect the wafer exposing only the kerf regions. Next, the wafer is etched, clearing the chip metallization from the kerf regions. The wafer is then diced and the chips are stacked to form a monolithic electronic module. A side surface of the electronic module is processed to expose transfer metals extending thereto, thereby facilitating electrical connection to the chips within the electronic module. Specific details of the fabrication method, resulting integrated circuit chips and monolithic electronic module are set forth.
    Type: Grant
    Filed: May 1, 1997
    Date of Patent: September 8, 1998
    Assignee: International Business Machines Corporation
    Inventors: Kenneth Edward Beilstein, Jr., Claude Louis Bertin, Timothy Harrison Daubenspeck, Wayne John Howell