Abstract: An embodiment of the invention includes an apparatus. The apparatus includes a plurality of lasers comprising a plurality of laser paths. The apparatus further includes an incoherent combining beam director in the plurality of laser paths. The apparatus also includes a plurality of optical elements in the plurality of laser paths between the plurality of lasers and the beam director.

Abstract: A fiber laser arrangement having a high beaming power includes a plurality of continuously operating coherent individual fiber lasers. Pumping energy generated by a common master oscillator operated in the longitudinal mode is distributed to the fiber lasers by way of a fiber splitter, in a branched manner. An integrated electro-optical phase shifter is assigned to each individual fiber laser, and can be controlled by an electronic control system. By appropriate displacements of the optical phases in individual phases of the fiber laser arrangement atmospheric turbulence effects on the propagation path of the laser radiation to a target are compensated in order to obtain an optimal focusing of the entire laser radiation onto the remote target.

Abstract: Semiconductor lasers are driven such that high output laser beams are stably obtained without a long start up time. The light outputs of a plurality of semiconductor lasers are detected by photodetectors. The semiconductor lasers are driven by automatic power control based on comparison results between the output of the photodetectors and a set value corresponding to a target light output for the semiconductor lasers. A correction pattern that corrects the set value and/or the output of the photodetectors such that the actual light output becomes uniform is generated in advance. The set value and/or the output are varied according to the correction pattern for a predetermined period of time from initiation of drive. A single correction pattern is employed in common with respect to the plurality of semiconductor lasers.

Abstract: The present invention relates to a method and device for reducing the phase noise of a laser signal from a laser source. This device comprises a first current generator for supplying a driving current to the laser source in view of producing the laser signal. A phase noise detector is responsive to the laser wavelength for generating a phase error signal and a second current generator is responsive to the phase error signal for generating a compensation current added to the driving current supplied to the laser source for generating a phase-adjusted laser signal. The device therefore defines a phase stabilization loop formed by the phase noise detector and the second current generator, for reducing the phase noise of the laser signal.

Abstract: In a first embodiment, the invention makes use of a Neodymium doped YAG (Nd:YAG) gain medium placed in an optical resonant cavity formed by two mirrors. Power extraction is maximized for a specific laser cavity. In particular the concave curvature on the rod ends contributes a negative lensing component to modify the strength of the thermal lens. In a second embodiment the present invention uses an amplifier rod medium with curved ends to act as lensing elements to collect emission from the laser gain medium and/or oscillator described in the first embodiment of the invention. The combination of thermal lens and curved rod ends produces a lensing effect which allows light to be directly coupled from a laser. In addition, variation of the input pump power allows for control of the thermal lens formed within the amplifier rod.

Abstract: A wavelength variable laser smaller in size than the conventional one can be achieved by arranging a gain chip, an etalon filter and a fifth reflective mirror on an AlN submount and longitudinally integrating the gain chip in which a 45° mirror and a lens are integrated and the etalon filter. A laser cavity has a structure in which light passes through an active layer from a first reflective mirror realized by an end surface of the gain chip, is reflected by the 45° mirror at an angle of 90° and then passes through the lens. The light having passed through the lens is converted into parallel light, passes through the etalon filter and reaches the fifth reflective mirror and is then reflected. The reflected light returns through the same optical path and reaches the first reflective mirror realized by the end surface of the gain chip.

Abstract: A semiconductor laser device operable to emit light having a desired wavelength in the green spectral range. The semiconductor laser device may include a pumping source and a laser structure including a substrate, a first cladding layer, and one or more active region layers. The one or more active region layers include a number of quantum wells having a spontaneous emission peak wavelength that is greater than about 520 nm at a reference pumping power density. The pumping source is configured to pump each quantum well at a pumping power density such that a stimulated emission peak of each quantum well is within the green spectral range, and the number of quantum wells within the one or more active region layers is such that a net optical gain of the quantum wells is greater than a net optical loss coefficient at the desired wavelength in the green spectral range.

Abstract: A laser cavity is provided by a reflecting spherical substrate with an array of emitters having a mode size. Each emitter has an axis aligned with a radius of the spherical substrate. A single mode waveguide is aligned with the array at an optical coupling distance less than the radius of the spherical substrate. A reflector substantially coincident with an end of the waveguide combines with the reflecting spherical substrate as a cavity.

Abstract: A laser pump cavity includes a heat sink holder with a central through hole, a plurality of slot portions, and a plurality of single emitters. The single emitter includes a heat sink and a single core disposed on the heat sink. The slot portions are uniformly spaced and surround the through hole. The single emitters are connected end to end, thereby forming at least one single emitter array. The at least one single emitter array is disposed in corresponding slot portions with each single core facing the through hole.

Abstract: A semiconductor light emitting device includes a first-conductivity-type first multilayer film reflecting mirror, and a second-conductivity-type second multilayer film reflecting mirror; a cavity layer; and a first conductive section, a second conductive section, and a third conductive section. The cavity layer has a stacked configuration including a first-conductivity-type or undoped first cladding layer, an undoped first active layer, a second-conductivity-type or undoped second cladding layer, a second-conductivity-type first contact layer, a first-conductivity-type second contact layer, a first-conductivity-type or undoped third cladding layer, an undoped second active layer, and a second-conductivity-type or undoped fourth cladding layer.

Abstract: A laser mirror assembly is disclosed with improved pointing stability. An elongated mirror includes a concave reflecting portion. A pair of elongated planar portions extend parallel to the concave reflecting portion on either side thereof. The planar portions are stepped down from the reflecting portion. The mirror is formed from copper. A pair of stainless steel strips are connected to planar portions. The bimetallic effect between the copper mirror and the stainless steel strips operates to counteract the warping of the mirror due to differential heating effects which arise during operation. In an alternate embodiment, a pair of aluminum strips are mounted on the rear surface of the mirror.

Abstract: An infrared element (10a) which includes at least a light emitting layer forming portion (9a) composed of, for example, a first conductivity type cladding layer (2a), an active layer (3a), and a second conductivity type cladding layer (4a) for emitting infrared light, is formed on a semiconductor substrate (1), and a red element (10b) which includes at least a light emitting layer forming portion (9b) composed of, for example, a first conductivity type cladding layer (2b), an active layer (3b), and a second conductivity type cladding layer (4b) for emitting red light, is formed on the same semiconductor substrate (1). And their second conductivity type cladding layers (4a and 4b) are made of the same material. As a result, forming process of their ridge portions may be communized and both of the elements can be formed respectively, with a window structure capable of high output operation.

Abstract: A laser light source apparatus includes a laser light source; a heat exchanger that includes a plurality of cooling fins and that cools the laser light source; a driving circuit that drives the laser light source; a housing including an intake port and an exhaust port; and an air-cooling fan that is attached to the housing and that discharges air taken in from the intake port to the exhaust port. The cooling fins are arranged at a position opposed to the intake port to be stacked up on each other at predetermined intervals and a pitch between the cooling fins is equal to or less than a minimum width of the intake port.

Abstract: A laser system having separately electrically operable cavities for emitting modulated narrow linewidth light with first, second and third mirror structures separated by a first active region between the first and the second and by a second active region between the second and the third. The second mirror structure has twenty of more periods of mirror pairs.

Abstract: Among others, RF receivers based on whispering gallery mode resonators are described. In one aspect, a photonic RF device includes a laser that is tunable in response to a control signal and produces a laser beam at a laser frequency. The RF device includes a first optical resonator structured to support a whispering gallery mode circulating in the first optical resonator, the optical resonator being optically coupled to the laser to receive a portion of the laser beam into the optical resonator in the whispering gallery mode and to feed laser light in the whispering gallery mode in the optical resonator back to the laser to stabilize the laser frequency at a frequency of the whispering gallery mode and to reduce a linewidth of the laser. The RF device includes a second optical resonator made of an electro-optic material to support a whispering gallery mode circulating in the optical resonator.

Abstract: At least either of the light entering plane or the light exiting plane is parallel to the (111) crystal face of the CaF2 crystal and the laser beam entering from the entering plane passes through the plane located between the [111] axis and the first azimuth axis in the locus of rotation of the [001] axis around the [111] axis and including the [111] axis and the first azimuth axis, the plane located between the [111] axis and the second azimuth axis in the locus of rotation of the [010] axis around the [111] axis and including the [111] axis and the second azimuth axis or the plane located between the [111] axis and the third azimuth axis in the locus of rotation of the [100] axis around the [111] axis and including the [111] axis and the third azimuth axis and exits from the exiting plane.

Abstract: An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.

Abstract: A laser system according to the invention comprises pump generating means (x02, x03) for generating at least a first and a second, preferably focused, pump beam, and lasing means (x06, x07) for emitting radiation by being appropriately pumped. The lasing means (x06, x07) is disposed in a first resonator so as to receive the first pump beam in order to generate a first beam (x21) having a first frequency, and the lasing means (x06, x07) is disposed in a second resonator so as to receive the second pump beam in order to generate a second beam (x22) having a second frequency. At least one Q-switch (x08; x17, x18) is disposed in the first and the second resonator, so that the first beam and the second beam both pass a Q-switch (x08; x17, x18). The laser system (x01) has an output (x13) generated from said first beam (x21) and said second beam (x22), and at least a part of said output (x13) is fed back to a regulation system (x14), said regulation system (x14) controlling said pump generating means (x02, x03).

Abstract: A laser beam steering apparatus includes a beam steering cell with an adjustable shape, with the cell having opposing Fabry-Perot filters, and a steering mechanism coupled to the cell to adjust its shape so that the direction of a laser beam emitted from the cell is changed in response to a change in the cell shape.

Abstract: An apparatus includes a pulsed laser source that produces a pulsed laser beam at an input repetition rate and an input pulse power, a passive pulse splitter that receives the pulsed laser beam and outputs a signal including a plurality of sub-pulses for each input pulse of the pulsed laser beam, a sample, and a detector. The output signal has a repetition rate that is greater than the input repetition rate and the powers of each of the sub-pulses are less than the input pulse power. The sample is placed in the path of a sample beam that is formed from the beam that exits the pulse splitter. The detector receives a signal of interest emitted from the sample.