Abstract: Provided is a display device including a substrate, a first electrode disposed on the substrate, a second electrode disposed on the substrate and spaced apart from the first electrode, a plurality of first sub-insulating layers extending in a first direction, disposed on the substrate and on the first and second electrodes, and arranged in a second direction crossing the first direction, and a plurality of light emitting elements disposed between the first sub-insulating layers and electrically connected to the first electrode and the second electrode.

Abstract: A method, apparatus and computer program product are provided to incentivize crowd sourcing of data by identifying and compensating content contributors based on a value of the content to training a neural network. Methods may include: receiving a request; processing the request using a machine learning model to generate a response to the request; based on the processing of the request using the machine learning model, identifying training data contributing to the response to the request; identifying one or more data contributors as providing the identified training data contributing to the response to the request; and providing a response to the request and an indication of the one or more data contributors.

Abstract: An object detecting system comprising: a first distance measuring device, configured to measure a first distance between a first part of an object and the first distance measuring device; a second distance measuring device, configured to measure a second distance between a second part of the object and the second distance measuring device; a uniform light source, configured to emit uniform light to the object; an optical sensor, configured to sense optical data of the object generated based on the uniform light; and a control circuit, configured to calculate a location of the object according to the first distance, the second distance and the optical data.

Abstract: A semiconductor structure includes a substrate, a passive device and an active device over the substrate. The active device is formed in the first region of the substrate, and the passive device is formed in the second region of the substrate. The semiconductor structure further includes a passivation layer that covers the top surface of the passive device. The passivation layer has an opening that exposes the active device.

Abstract: A display device includes a display substrate, a first connection wiring, and a signal wiring. The display substrate includes a display area and a pad area disposed outside the display area. The first connection wiring is disposed on the pad area of the display substrate. The signal wiring is disposed on the first connection wiring of the pad area of the display substrate. The signal wiring is electrically connected to the first connection wiring through a first contact hole. The signal wiring includes at least one first opening at least partially surrounded by the signal wiring in a plan view. The first opening is disposed closer to the display area than the first contact hole.

Abstract: A semiconductor device includes a substrate having a high electron mobility transistor (HEMT) region and a capacitor region, a first mesa isolation on the HEMT region, a HEMT on the first mesa isolation, a second mesa isolation on the capacitor region, and a capacitor on the second mesa isolation. The semiconductor device further includes buffer layer between the substrate, the first mesa isolation, and the second mesa isolation, in which bottom surfaces of the first mesa isolation and the second mesa isolation are coplanar.

Abstract: Devices and methods for switch body connections to achieve soft breakdown. In some embodiments, a field-effect transistor (FET) can include an assembly of source, gate, and drain implemented on an active region, a first body contact implemented at a first end of the assembly, and a second body contact implemented at a second end of the assembly. The second end can be distal from the first end along a width of the field-effect transistor.

Abstract: A device includes a conductive feature, a dielectric layer, a bottom electrode via, and a liner layer. The dielectric layer is over the conductive feature. The bottom electrode via is in the dielectric layer and over the conductive feature. A topmost surface of the bottom electrode via is substantially flat. A liner layer cups an underside of the bottom electrode via. The liner layer has a topmost end substantially level with the topmost surface of the bottom electrode via.

Abstract: There is provided a method for manufacturing an electronic device including a substrate of semiconductor material, an intermediate portion, and a silicon carbide layer, the method including transferring the silicon carbide layer from a first electronic element onto a face of a second electronic element including the substrate, the transfer including: providing the first element including a primary silicon carbide-based layer, a first diffusion barrier portion, and a first metal layer; providing the second element including the substrate, a second diffusion barrier portion, and a second metal layer; and bonding an exposed face of each of the first and the second metal layers, the first and the second metal layers being formed of tungsten, the first and the second portions being formed of at least one tungsten silicide layer, and the second portion, the second metal layer, the first metal layer, and the first portion form the intermediate portion.

Abstract: A light-emitting diode includes a semiconductor body and electrical connection points for contacting the semiconductor body, the semiconductor body including an active region including a quantum well that generates electromagnetic radiation, a first region and a second region that impede passage of charge carriers from the active region, wherein the semiconductor body is based on a nitride compound semiconductor material, the first region is directly adjacent to the active region on a p-side, the second region is arranged on a side of the first region facing away from the active region, the first region has an electronic band gap larger than the electronic band gap of the quantum well and less than or equal to an electronic band gap of the second region, the first region and the second region contain aluminum, and the active region emits electromagnetic radiation having a peak wavelength of less than 480 nm.

Abstract: Implementations of semiconductor packages may include: a digital signal processor having a first side and a second side and an image sensor array, having a first side and a second side. The first side of the image sensor array may be coupled to the second side of the digital signal processor through a plurality of hybrid bond interconnect (HBI) bond pads and an edge seal. One or more openings may extend from the second side of the image sensor array into the second side of the digital signal processor to an etch stop layer in the second side of the digital signal processor. The one or more openings may form a second edge seal between the plurality of HBI bond pads and the edge of the digital signal processor.

Abstract: Electronic devices that detect their position and/or orientation with respect to earth's frame of reference are described. A coupler can removeably maintain the electronic devices in physical proximity of one another. Each electronic device can have a housing and the coupler can be included on the housing and arranged to physically connect the housing of the electronic device to the housing of at least one other electronic device. Alternatively, the coupler can be a packaging that maintains the electronic devices in physical proximity of one another. Each electronic device can be calibrated using the orientation or position information obtained by other electronic devices maintained by the coupler. Further, each electronic device can include a power source that remains inactive until the device is ready for use.

Abstract: An optoelectronic device comprises a substrate, an optoelectronic element mounted on the substrate, a shielding cap providing electromagnetic shielding, at least one optical element attached to the shielding cap, and a detection element configured to detect if the shielding cap is mounted on the substrate.

Abstract: A heat sink and power interconnect for a UV LED array are provided. A first circuit is disposed on a surface of a first substrate. A UV LED array is positioned thereon. A second substrate and second circuit are spaced apart from the first substrate and a first heat sink is positioned adjacent thereto. An aperture passes through each of the first substrate, the second substrate, and the heat sink. An electrical insulator lines the aperture with an electrically and thermally conductive liner positioned adjacent to the electrical insulator. A fastener is positioned in the aperture and electrically interconnects the first circuit and the second circuit through the electrically and thermally conductive liner and electrically communicates with an external power supply. The fastener carries one or more of a power or an electrical signal, and dissipates heat through the electrically and thermally conductive liner to the heat sink.

Abstract: Computational systems and methods employ characteristics of a quantum processor determined or sampled between a start and an end of an annealing evolution per an annealing schedule. The annealing evolution can be reinitialized, reversed or continued after determination. The annealing evolution can be interrupted. The annealing evolution can be ramped immediately prior to or as part of determining the characteristics. The annealing evolution can be paused or not paused immediately prior to ramping. A second representation of a problem can be generated based at least in part on the determined characteristics from an annealing evolution performed on a first representation of the problem. The determined characteristics can be autonomously compared to an expected behavior, and alerts optionally provided and/or the annealing evolution optionally terminated based on the comparison. Iterations of annealing evolutions may be performed until an exit condition occurs.

Abstract: A method for scalable multi-task learning with convex clustering includes: extracting features from a dataset of a plurality of tasks; generating a graph from the extracted features, nodes of the graph representing linear learning models, each of the linear learning models being for one of the tasks; constraining the graph using convex clustering to generate a convex cluster constrained graph; and obtaining a global solution by minimizing a graph variable loss function, the minimizing the graph variable loss function comprising: introducing auxiliary variables for each connection between nodes in the convex cluster constrained graph; iteratively performing the following operations until convergence: updating the linear learning models by solving a sparse linear system; and updating the auxiliary variables by solving an equation having the auxiliary variables each be proportional to a vector norm for their respective nodes.

Abstract: A semiconductor package includes a wafer and at least one chip attached on first portions of an upper surface of the wafer. Further, the semiconductor package includes an insulating barrier layer, a thermally conductive layer, and a heat sink. The insulating barrier layer is arranged over the at least one chip attached on first portions of an upper surface of the wafer. The thermally conductive layer is arranged over the insulating barrier layer and at least partially encapsulates the at least one chip. The heat sink is arranged over the thermally conductive layer.

Abstract: The present invention discloses a double color micro LED display panel including a plurality of pixels and a plurality of barrier components. Each of the pixels includes a substrate, a first bonding layer configured on the substrate, a first light emitting layer configured on the first bonding layer and emitting a first light, a second bonding layer configured on the first light emitting layer and a second light emitting layer configured on the second bonding layer and emitting a second light. The wavelength of the second light is different from that of the first light. The barrier components respectively located between the pixels for blocking a light emitted from one of the pixels to the other of the pixels. Wherein, the material of the second bonding layer is a non-metallic material.

Abstract: A desired range of lift force to raise a window shade is used to select the window shade hardware such as, for example, the optimal LAM. A desired lift force may be 5 pounds for ADA compliance. However, if the user wants to exert less effort to lift the window shade, the user may request an increased lift force of 6 or 7 pounds. Therefore, if a lift force range between 3-8.5 pounds is desired, the system selects the optimal LAM to maintain and guarantee that the lift force required to operate the shades will not exceed the desired range of between 3-8.5 pounds.

Abstract: Aspects of the present technology are directed toward Integrated Circuits (IC) including a plurality of trenches disposed in a substrate about a set of silicide regions. The trenches can extend down into the substrate below the set of silicide regions. The silicide regions can be formed by implanting metal ions into portions of a substrate exposed by a mask layer with narrow pitch openings. The trenches can be formed by selectively etching the substrate utilizing the set of silicide regions as a trench mask. An semiconductor material with various degree of crystallinity can be grown from the silicide regions, in openings that extend through subsequently formed layers down to the silicide regions.