Abstract: A semiconductor package includes a package substrate, an interposer on the package substrate, a plurality of semiconductor devices on the interposer and spaced apart from each other, the semiconductor devices being electrically connected to the interposer, a dam structure on the interposer extending along a peripheral region of the interposer, the dam structure being spaced apart from the semiconductor devices, and a stress relief on the interposer, the stress relief including an elastic member that fills gaps between the semiconductor devices and the dam structure.

Abstract: The power module semiconductor device (2) includes: an insulating substrate (10); a first pattern (10a) (D) disposed on the insulating substrate (10); a semiconductor chip (Q) disposed on the first pattern; a power terminal (ST, DT) and a signal terminal (CS, G, SS) electrically connected to the semiconductor chip; and a resin layer (12) configured to cover the semiconductor chip and the insulating substrate. The signal terminal is disposed so as to be extended in a vertical direction with respect to a main surface of the insulating substrate.

Abstract: An image sensor includes pixel electrodes, a control electrode, a photoelectric conversion film arranged on the pixel electrodes, a transparent electrode arranged on the photoelectric conversion film, an insulating layer arranged on at least a portion of a top surface of the transparent electrode, and a connection layer that electrically connects the control electrode to the transparent electrode. The connection layer is in contact with at least one side surface of the transparent electrode. A side surface of the insulating layer, the at least one side surface of the transparent electrode, and a side surface of the photoelectric conversion film are aligned with each other.

Abstract: A circuit assembly may include a substrate and a pattern of contact points formed from deformable conductive material supported by the substrate. The assembly may further include an electric component supported by the substrate and having terminals arranged in a pattern corresponding to the pattern of contacts points. The one or more of the terminals of the electric component may contact one or more of the corresponding contact points to form one or more electrical connections between the electric component and the contact points.

Abstract: A display panel is provided. In a display region configured to display an image, the display panel includes a base substrate; thin film transistors and display elements on the base substrate; an encapsulating layer encapsulating the display elements; and a touch electrode layer including mesh electrodes on a side of the encapsulating layer away from the base substrate. The encapsulating layer includes at least an organic encapsulating sub-layer having a first thickness in at least a sub-region of the transition region, and a second thickness in the display region, the first thickness being smaller than the second thickness. Mesh electrode lines of the mesh electrodes have a first line width in at least the sub-region of the transition region, and a second line width in the display region, the first line width being greater than the second line width.

Abstract: A semiconductor package includes a package substrate; semiconductor devices disposed on the package substrate; a package ring disposed on a perimeter of the package substrate surrounding the semiconductor devices; a cover including silicon bonded to the package ring and covering the semiconductor devices; and a thermal interface structure (TIS) thermally connecting the semiconductor devices to the cover.

Abstract: A heat distribution device comprising a main body, a recessed cavity positioned within the main body, the recessed cavity having an interior surface, a peripheral wall extending around and defining the interior surface, and a central point within the recessed cavity. A plurality of ribs may extend away from the interior surface of the recessed cavity. The plurality of ribs may be concentrically arranged around the central point and define a plurality of channels therebetween. Each of the plurality of ribs may have a top surface that slopes toward or away from the central point. The plurality of ribs may be arranged so that the top surfaces of the plurality of ribs collectively form a collective sloped surface within the heat distribution device.

Abstract: An IC die includes a temperature control element suitable for three-dimensional IC package with enhanced thermal control and management. The temperature control element may assist temperature control of the IC die when in operation. In one example, the temperature control element may have a plurality of thermal dissipating features disposed on a first surface of the IC die to efficiently control and dissipate the thermal energy from the IC die when in operation. A second surface opposite to the first surface of the IC die may include a plurality of devices, such as semiconductors transistors, devices, electrical components, circuits, or the like, that may generate thermal energy when in operation. The temperature control element may provide an IC die with high efficiency of heat dissipation that is suitable for 3D IC package structures and requirements.

Abstract: The disclosure is directed to an electronic device with a lid to manage radiation feedback. The electronic device includes a lid having at least one sidewall and a top wall, as well as a semiconductor positioned within a cavity of the lid. In certain embodiments, the lid includes at least one dielectric material and at least one internal conductive layer at least partially embedded within the at least one dielectric material. In certain embodiments, the lid includes dielectric material, as well as an internal wall extending from the top wall and positioned between an input port and an output port of the semiconductor. Such configurations may suppress any undesirable feedback through the lid between the input port and the output port of the semiconductor.

Abstract: A 3D integrated circuit device can include a substrate, a thermal interface layer and at least one die, at least one device layer bonded between the thermal interface layer and the at least one die, wherein the thermal interface layer enhances conductive heat transfer between the at least one device layer and the at least one die, and a heat sink located adjacent to a heat spreader, wherein the thermal interface layer, the at least one die and the at least one device layer are located between the heat spreader and the substrate.

Abstract: A semiconductor apparatus that ensures heat dissipation using a heat dissipating member with multiple fins formed by folding a metal plate, a manufacturing method for the semiconductor apparatus, and a power converter are obtained. The semiconductor device is bonded to a lead frame. The lead frame is provided on an insulating layer and a metal base plate is provided on the face opposite to the face of the insulating layer on which the semiconductor device is bonded. The semiconductor device, the lead frame, the insulating layer, and the metal base plate are sealed with a sealing member in such a way that a portion of the lead frame and a portion of the metal base plate are exposed. The exposed portion of the metal base plate exposed from the sealing member is inserted in an opening of a support frame. A heat dissipating member is bonded to both the metal base plate and the support frame.

Abstract: A semiconductor module arrangement includes a housing, a first semiconductor substrate arranged inside the housing, a second semiconductor substrate arranged inside the housing, a first plurality of controllable semiconductor elements, and a second plurality of controllable semiconductor elements. During operation of the semiconductor module arrangement, each controllable semiconductor element of the first plurality of controllable semiconductor elements generates switching losses and conduction losses, the switching losses being greater than the conduction losses. Further during operation of the semiconductor module arrangement, each controllable semiconductor element of the second plurality of controllable semiconductor elements generates switching losses and conduction losses, the conduction losses being greater than the switching losses.

Abstract: The present disclosure relates to a system in package having a chiplet with a first substrate and a first die deposed over the first substrate, a second die, a second substrate that the chiplet and the second die are deposed over, and a heatsink spreader deposed over the chiplet and the second die. Herein, the first substrate includes layered-cake shaped heatsink stanchions that are coupled to the first die, and the second substrate includes layered-cake shaped heatsink stanchions that are coupled to the chiplet and the second die. As such, heat generated by the first die can be dissipated by the heatsink stanchions within the first and second substrates, and heat generated by the second die can be dissipated by the heatsink stanchions within the second substrate. Furthermore, the heat generated by the first die and the second die can be dissipated by the heatsink spreader above them.

Abstract: A semiconductor device includes a plurality of functional blocks, each being configured to provide at least one predetermined function. The functional blocks at least include a first functional block and a second functional block. The first functional block and the second functional block are coupled in serial with a predetermined current flowing therethrough.

Abstract: A package for mounting on a mounting base is disclosed. In one example, the package comprises a carrier, an electronic component mounted at the carrier, leads electrically coupled with the electronic component and to be electrically coupled with the mounting base, and a linear spacer for defining a spacing with respect to the carrier.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to series inductors and methods of manufacture. A structure includes a plurality of wiring levels each of which include a wiring structure connected in series to one another. A second wiring level being located above a first wiring level of the plurality of wiring levels. A wiring structure on the second wiring level being at least partially outside boundaries of the wiring structure of the first wiring level.

Abstract: A compound metal lid for semiconductor chip package is provided. The compound metal lid includes a first cover and a second cover. The first cover has a first frame body, a plurality of riveting holes, and an upper opening. The riveting holes penetrate through the first frame body and are distributed symmetrically on the first frame body. The upper opening is formed at an inner part of the first frame body, and the riveting holes surround the upper opening. The second cover has a second frame body, a plurality of riveting protrusions, and a lower opening. The riveting protrusions are formed on the upper surface of the second frame body. The lower opening penetrates through the second frame body. The first cover is disposed on an upper surface of the second cover, and the riveting protrusions are correspondingly riveted in the riveting holes.

Abstract: Thermal heat spreaders and/or an IC die with solderable thermal structures may be assembled together with a solder array thermal interconnects. A thermal heat spreader may include a non-metallic material and one or more metallized surfaces suitable for bonding to a solder alloy employed as thermal interface material between the heat spreader and an IC die. An IC die may include a metallized back-side surface similarly suitable for bonding to a thermal interconnect comprising a solder alloy. Metallization on the IC die and/or heat spreader may comprise a plurality of solderable structures. A multi-chip package may include multiple IC die having different die thickness that are accommodated by a z-height thickness variation in the thermal interconnects and/or the solderable structures of the IC die or heat spreader.

Abstract: In an embodiment, a device includes: an integrated circuit die; an encapsulant at least partially surrounding the integrated circuit die, the encapsulant including fillers having an average diameter; a through via extending through the encapsulant, the through via having a lower portion of a constant width and an upper portion of a continuously decreasing width, a thickness of the upper portion being greater than the average diameter of the fillers; and a redistribution structure including: a dielectric layer on the through via, the encapsulant, and the integrated circuit die; and a metallization pattern having a via portion extending through the dielectric layer and a line portion extending along the dielectric layer, the metallization pattern being electrically coupled to the through via and the integrated circuit die.

Abstract: A semiconductor package structure and a method for manufacturing a semiconductor package structure are provided. The semiconductor package structure includes a device package and a shielding layer. The device package includes an electronic device unit and has a first surface, a second surface opposite to the first surface, and a third surface connecting the first surface to the second surface. The shielding layer is disposed on the first surface and the second surface of the device package. A common edge of the second surface and the third surface includes a first portion exposed from the shielding layer by a first length, and a common edge of the first surface and the third surface includes a second portion exposed from the shielding layer by a second length that is different from the first length.