Abstract: A workpiece carrier is described for a plasma processing chamber that has isolated heater plate blocks. In one example, a plasma processing system has a plasma chamber, a plasma source electrically coupled with a showerhead included within the plasma chamber, a workpiece holder in a processing region of the plasma chamber having a puck to carry a workpiece, wherein the workpiece holder includes a heater plate having a plurality of thermally isolated blocks each thermally coupled to the puck, wherein each block includes a heater to heat a respective block of the heater plate, and wherein the workpiece holder includes a cooling plate fastened to and thermally coupled to the heater plate, the cooling plate defining a cooling channel configured to distribute a heat transfer fluid to transfer heat from the cooling plate, and a temperature controller to independently control each heater.

Abstract: An apparatus for wafer processing includes a wafer pedestal configured to support a wafer, a radiation source configured to provide an electromagnetic radiation to the wafer, and a transparent window disposed between the wafer pedestal and the radiation source. The transparent window has a first zone having a first rough surface, and an Ra value of the first rough surface is between approximately 0.5 ?m and approximately 100 ?m. The apparatus for wafer processing further includes a primary reflector disposed in the radiation source, and a secondary reflector disposed between the transparent window and the radiation source. The rough surface can be provided over the transparent window, the primary reflector, and/or the secondary reflector.

Abstract: Disclosed is a plasma processing apparatus including a processing chamber configured to perform a processing on a wafer by plasma, a VF power supply configured to change a frequency of a high frequency power to be supplied into the chamber, a susceptor configured to mount the wafer thereon, and a focus ring disposed to surround the wafer. A first route, which passes through the plasma starting from the VF power supply, passes through the susceptor, the wafer and the plasma, and a second route, which passes through the plasma starting from the VF power supply, passes through the susceptor, the focus ring and the plasma. The reflection minimum frequency of the first route is different from the reflection minimum frequency of the second route, and the frequency range changeable by the VF power supply includes the reflection minimum frequencies of the first and second routes.

Abstract: A plasma processing apparatus includes a plasma processing chamber processing a sample using plasma, a radio frequency power supply supplying radio frequency power for generating the plasma, a sample stage including an electrode electrostatically chucking the sample, mounting the sample thereon, a DC power supply applying DC voltage to the electrode, and a control device shifting the DC voltage previously set, in a negative direction by a first shift amount during discharge of the plasma, shifting the DC voltage having been shifted in the negative direction by the first shift amount, in a positive direction by a second shift amount after the discharge of the plasma. The first shift amount has a value changing potential over a surface of the sample to 0 V, upon shifting the DC voltage in the positive direction. The second shift amount has a value obtained based on a floating potential of the plasma.

Abstract: The present disclosure relates to an apparatus and method that manipulates the voltage at an edge ring relative to a substrate located on a substrate support located within a processing chamber. The apparatus includes a substrate support assembly that has a body having a substrate electrode embedded therein for applying a voltage to a substrate. The body of the substrate support assembly additionally has an edge ring electrode embedded therein for applying a voltage to an edge ring. The apparatus further includes an edge ring voltage control circuit coupled to the edge ring electrode. A substrate voltage control circuit is coupled to the substrate electrode. The edge ring voltage control circuit and the substrate voltage control circuit are independently tunable to generate a difference in voltage between the edge ring voltage and the substrate voltage.

Abstract: A system for use in processing a substrate is provided. One system includes a chamber having an interior region that is exposed to plasma when processing a substrate. The internal region includes surfaces of parts of the chamber. A controller is interfaced with the chamber and includes a detector to enable control of a scope. The scope is configured for insertion into the chamber to inspect the interior region of the chamber without breaking a vacuum of the chamber. The detector includes an optical processor for identifying a characteristic of material present on a surface being inspected via the scope. A tool model processor is configured to receive information regarding the identified characteristic of the material present on the surface and interface with a tool model for the chamber to identify an adjustment to a parameter of a process to be performed using the chamber.

Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define a central channel through the adapter. The adapter may define an exit from a second channel at the second end, and the adapter may define an exit from a third channel at the second end. The central channel, the second channel, and the third channel may each be fluidly isolated from one another within the adapter.

Abstract: This invention relates to a plasma chemical vapor deposition microwave resonant cavity, which has a high focusing ability and can be flexibly configured. The resonant cavity is a rotary body formed by two isosceles triangles intersecting at the vertex angles with a Boolean union operation. The base angles of the two triangles are 50°˜75°. Between 2n?˜(2n+0.5) ?, the base lengths of the two triangles are equal or have an n? difference, where n is an integer and ? is the microwave wavelength. The distance between the centroids of the upper and the lower isosceles triangles is 0˜4/5?. A strongly focused electric field can be formed in the cavity by adjusting the base lengths, base angles and centroid distance. Different dielectric windows, microwave coupling modes and gas inlet and outlet modes can be selected in the cavity to fit specific applications. The cavity has simple structures.

Abstract: A film deposition system includes a chamber, a stage disposed in the chamber configured to support a substrate, one or more gas inlet structures configured to supply one or more gases to an interior of the chamber, and one or more microwave-introducing windows that introduce microwave radiation to the chamber to excite the one or more source gases to produce a plasma proximate the stage. The gas inlet structures include one or more angled gas inlets that introduce a plasma-shaping gas flow to the chamber at an angle relative to a symmetry axis of the stage. The plasma-shaping gas flow interacts with the plasma in a way that facilitates axisymmetric deposition of material on a surface of the substrate with the plasma.

Abstract: An annular member is disposed to surround a pedestal for receiving a substrate in a plasma processing apparatus. The annular member contains quartz and silicon. A content percentage of the silicon in the quartz and the silicon is 2.5% or more and 10% and less by weight.

Abstract: A wafer carrier for use in a chemical vapor deposition (CVD) system includes a plurality of wafer retention pockets, each having a peripheral wall surface surrounding a floor surface and defining a periphery of that wafer retention pocket. Each wafer retention pocket has a periphery with a shape defined by at least a first arc having a first radius of curvature situated around a first arc center and a second arc having a second radius of curvature situated around a second arc center. The second arc is different from the first arc, either by its radius of curvature, arc center, or both.

Abstract: A plasma processing apparatus includes a process chamber, a substrate chuck disposed in the process chamber, and a temperature controller. The substrate chuck is configured to receive a substrate, and includes a cooling channel through which a coolant flows. The temperature controller is configured to control a temperature of the coolant supplied to the cooling channel. The temperature controller includes a cooler configured to cool the coolant supplied to the cooling channel, a heater configured to heat the coolant supplied to the cooling channel, and a 3-way valve configured to regulate a first flow rate of the coolant passing through the cooler and a second flow rate of the coolant passing through the heater.

Abstract: The present invention improves the in-plane uniformity of films formed via a plasma treatment.

Abstract: The present invention improves the in-plane uniformity of film formation via a plasma treatment.

Abstract: Provided is a technique in which a heating-up time inside a process chamber is reduced. The technique includes a substrate processing apparatus including a process chamber where a substrate is processed, a substrate retainer configured to support the substrate in the process chamber, a process gas supply unit configured to supply a process gas into the process chamber, a first heater installed outside the process chamber and configured to heat an inside of the process chamber, a thermal insulating unit disposed under the substrate retainer, a second heater disposed in the thermal insulating unit and configured to heat the inside of the process chamber, and a purge gas supply unit configured to supply a purge gas into the thermal insulating unit to purge an inside of the thermal insulating unit.

Abstract: A plasma source may include a plasma chamber, where the plasma chamber has a first side, defining a first plane and an extraction assembly, disposed adjacent to the side of the plasma chamber, where the extraction assembly includes at least two electrodes. A first electrode may be disposed immediately adjacent the side of the plasma chamber, wherein a second electrode defines a vertical displacement from the first electrode along a first direction, perpendicular to the first plane, wherein the first electrode comprises a first aperture, and the second electrode comprises a second aperture. The first aperture may define a lateral displacement from the second aperture along a second direction, parallel to the first plane, wherein the vertical displacement and the lateral displacement define a non-zero angle of inclination with respect to a perpendicular to the first plane.

Abstract: A plasma atomic layer deposition apparatus includes: a source gas supply port functioning also as a cleaning gas supply port provided on a first side wall of a film-forming container; and a source gas exhaust port functioning also as a cleaning gas exhaust port provided on a second side wall opposed to the first side wall of the film-forming container.

Abstract: Provided is a focalized microwave plasma reactor. The reactor utilizes a cylindrical microwave resonant cavity of the quasi-TM011 mode to focalize microwave power and to excite focalized microwave plasma for the processes of microwave plasma enhanced chemical vapour depositions.

Abstract: In some examples, a magnetic shield for a plasma source is provided. An example magnetic shield comprises a back-shell. The back-shell includes a cage defined, at least in part, by an arrangement of bars of ferro-magnetic material. The cage is sized and configured to at least extend over a top side of an RF source coil for the plasma source.

Abstract: The present invention is an artificial diamond production device. A reaction chamber has a window. The diamond holder has a focus area facing toward the window. The microwave transmitting module is disposed outside the reaction chamber and has a microwave generator, a focusing-lens assembly, and a focusing mechanism. The microwave generator emits the microwave into the diamond holder via the window. The focusing-lens assembly is disposed between the diamond holder and the microwave generator. The focusing mechanism is connected to the focusing-lens assembly and a distance between the focusing-lens assembly and the microwave generator is changed by the focusing mechanism to focus the microwave on the focus area to improve the efficiency of producing artificial diamonds.