Abstract: A display apparatus includes a display substrate, first micro LED modules arranged on the display substrate, and at least one second micro LED module disposed between the first micro LED modules. Each of the first micro LED modules includes a first substrate and micro LEDs disposed on the first substrate. The second micro LED module includes a second substrate and micro LEDs disposed on the second substrate. The second substrate bridges two adjacent first substrates.

Abstract: A method of repairing a light emitting device, comprises: providing a light emitting device comprising a carrier board and a first light emitting unit; destroying the first light emitting unit and forming a removal surface on the light emitting device; planarizing the removal surface; providing a bonding structure on the removal surface; and fixing a second light emitting unit on the planarized removal surface through the bonding material.

Abstract: A method for manufacturing a light-emitting module, includes placing a light-emitting element on a support member with an electrode formation surface of the light-emitting element facing upward; forming a pair of first conductive members respectively on the element electrodes; forming a first light-reflective resin layer on the support member and around the light-emitting element and the first conductive members; forming a pair of second conductive members on the first light-reflective resin layer and respectively on the first conductive members, the second conductive member being wider than the first conductive member; forming a second light-reflective resin layer on the first light-reflective resin layer and around the second conductive members; forming wiring electrodes over the second light-reflective resin layer from the second conductive members; and removing the support member.

Abstract: An LED display module and an LED displayer are disclosed. The LED display module comprises a module bottom shell and a circuit board installed in the module bottom shell. The module bottom shell comprises a shell body and a first heat-dissipation cover disposed over a first open region of the shell body. The LED display module further comprises a power supply and a receiving card which are electrically connected to the circuit board. The power supply is located between the first heat-dissipation cover and the circuit board. The receiving card is located between the shell body and the circuit board. The LED display module is ultra-thin, and the LED displayer is made ultra-thin, accordingly.

Abstract: A chip-detecting method, a chip-detecting structure and a chip-carrying structure are provided. The chip-detecting method includes providing a chip-detecting structure including a plurality of micro heater groups, a chip-carrying structure for carrying a plurality of chips, and a plurality of soldering material groups disposed between the chip-carrying structure and the chip-detecting structure; placing the chip-carrying structure and the chip-detecting structure adjacent to each other, so that each of the soldering material groups simultaneously contact the chip-carrying structure and the chip-detecting structure; respectively curing the low-temperature soldering material groups by heating of the micro heater groups, so that the chips are electrically connected to the chip-detecting structure respectively through the low-temperature soldering material groups that have been cured; and then detecting the chips so as to divide the chips into a plurality of good chips and a plurality of bad chips.

Abstract: What is disclosed are structures and methods for testing and repairing emissive display systems. Systems are tested with use of temporary electrodes which allow operation of the system during testing and are removed afterward. Systems are repaired after identification of defective devices with use of redundant switching from defective devices to functional devices provided on repair contact pads. Time varying signals coupled to a capacitor are used as well.

Abstract: A display device includes: a transparent circuit board and a plurality of light-emitting elements arrayed in matrix on the transparent circuit board, the light-emitting elements each including a pair of terminals which drive voltage for light emission is applied, the circuit board including a plurality of row wires each connecting ones of the pairs of terminals of ones of the light-emitting elements to each other, the ones of the light-emitting elements belonging to a same one of rows in the matrix array, and a plurality of column wires each connecting other ones of the pairs of terminals of ones of the light-emitting elements to each other, the ones of the light-emitting elements belonging to a same one of columns in the matrix array, the plurality of row wires and the plurality of column wires being formed on different surfaces of the circuit board.

Abstract: Semiconductor devices and methods are provided. A semiconductor device according to the present disclosure includes a first gate-all-around (GAA) transistor having a first plurality of channel members, and a second GAA transistor having a second plurality of channel members. A pitch of the first plurality of channel members is substantially identical to a pitch of the second plurality of channel members. The first plurality of channel members has a first channel member thickness (MT1) and the second plurality of channel members has a second channel member thickness (MT2) greater than the first channel member thickness (MT1).

Abstract: A semiconductor device comprises a memory macro including a well pick-up (WPU) area oriented lengthwise along a first direction, and memory bit areas adjacent to the WPU area. In the WPU area, the memory macro includes n-type and p-type wells arranged alternately along the first direction with well boundaries between adjacent wells; gate structures over the wells and oriented lengthwise along the first direction; a first dielectric layer disposed at each of the well boundaries; first contact features disposed over one of the p-type wells; and second contact features disposed over one of the n-type wells. From a top view, the first dielectric layer extends along a second direction perpendicular to the first direction and separates all the gate structures in the first WPU area, the first contact features are disposed between the gate structures, and the second contact features are disposed between the gate structures.

Abstract: A display device includes a plurality of semiconductor light emitting diodes, first and second electrodes respectively extending from the plurality of semiconductor light emitting diodes to supply an electrical signal to the plurality of semiconductor light emitting diodes, a plurality of pair electrodes disposed on a substrate and having a first electrode and a second electrode, a dielectric layer disposed on the plurality of pair electrodes, and a chemical bond layer disposed between the dielectric layer and the plurality of semiconductor light emitting diodes and forming a covalent bond with the dielectric layer and each of the plurality of semiconductor light emitting diodes. The chemical bond layer bonds the semiconductor light emitting diodes to the dielectric layer when a voltage applied to the plurality of pair electrodes is cut off after the plurality of semiconductor light emitting diodes are assembled on the dielectric layer.

Abstract: A semiconductor fabrication apparatus includes a source chamber being operable to generate charged particles; and a processing chamber integrated with the source chamber and configured to receive the charged particles from the source chamber. The processing chamber includes a wafer stage being operable to secure and move a wafer, and a laser-charged particles interaction module that further includes a laser source to generate a first laser beam; a beam splitter configured to split the first laser beam into a second laser beam and a third laser beam; and a mirror configured to reflect the third laser beam such that the third laser beam is redirected to intersect with the second laser beam to form a laser interference pattern at a path of the charged particles, and wherein the laser interference pattern modulates the charged particles by in a micron-zone mode for processing the wafer using the modulated charged particles.

Abstract: A display device includes a substrate, a first electrode disposed on the substrate, a second electrode disposed on the substrate and spaced apart from the first electrode, a plurality of first protruding electrodes disposed on the first electrode, a plurality of second protruding electrodes disposed on the second electrode, and a plurality of light emitting elements electrically connected to the plurality of first protruding electrodes and the plurality of second protruding electrodes.

Abstract: A light-emitting device includes a mounting substrate having a first surface and a second surface opposite to the first surface, the mounting substrate having a first end portion at an end of the mounting substrate; light-emitting elements mounted on the first surface of the mounting substrate other than the first end portion; first terminals provided on the first surface at the first end portion of the mounting substrate and connected to the light-emitting elements; and second terminals provided on the second surface at the first end portion of the mounting substrate and connected to the light-emitting elements.

Abstract: An apparatus for treating a substrate includes a chamber having a treating space formed therein, a substrate support unit that supports the substrate in the treating space, a plate that is located to face the substrate support unit in the treating space and that has a plurality of holes formed therein, a gas supply unit that supplies gas into the treating space through the holes, and a gas exhaust unit that exhausts the gas in the treating space through the holes.

Abstract: Disclosed herein are techniques for forming a thin-film circuit layer on an array of light-emitting diodes (LEDs). LEDs in the array of LEDs can be singulated by various processes, such as etching and ion implantation. Singulating LEDs can be performed before or after forming the thin-film circuit layer on the array of LEDs. The array of LEDs can be bonded to a transparent or non-transparent substrate.

Abstract: A magnetic tunnel junction (MTJ) is disclosed wherein a free layer (FL) interfaces with a first metal oxide (Mox) layer and second metal oxide (tunnel barrier) to produce perpendicular magnetic anisotropy (PMA) in the FL. In some embodiments, conductive metal channels made of a noble metal are formed in the Mox that is MgO to reduce parasitic resistance. In a second embodiment, a discontinuous MgO layer with a plurality of islands is formed as the Mox layer and a non-magnetic hard mask layer is deposited to fill spaces between adjacent islands and form shorting pathways through the Mox. In another embodiment, end portions between the sides of a center Mox portion and the MTJ sidewall are reduced to form shorting pathways by depositing a reducing metal layer on Mox sidewalls, or performing a reduction process with forming gas, H2, or a reducing species.

Abstract: Methods of manufacturing a semiconductor structure are provided. One of the methods includes the following operations. A substrate is received, and the substrate includes a first conductive region and a second conductive region. A first laser anneal is performed on the first conductive region to repair lattice damage. An amorphization is performed on the first conductive region and the second conductive region to enhance silicide formation to a desired phase transformation in the subsequent operations. A pre-silicide layer is formed on the substrate. A thermal anneal is performed to the substrate to form a silicide layer from the pre-silicide layer. A second laser anneal is performed on the first conductive region and the second conductive region.

Abstract: A semiconductor device includes a substrate including a first region and a second region that are arranged in a first direction that is parallel to an upper surface of the substrate; a separation layer provided on the first region of the substrate; a high electron mobility transistor (HEMT) device overlapping the separation layer in a second direction that is perpendicular to the upper surface of the substrate; a light-emitting device provided on the second region of the substrate; and a first insulating pattern covering a side surface of the HEMT device, wherein the first insulating pattern overlaps the separation layer in the second direction.

Abstract: Semiconductor chip package device and semiconductor chip package method are provided. The semiconductor chip package device includes: a lead frame, chips, an encapsulating layer, and an electroplating layer. The lead frame includes a first surface, a second surface, first grooves, second grooves, and third grooves. The first grooves are connected to the second grooves to form through holes and the third grooves disposed at ends of the lead frame. The chips are electrically connected to the lead frame. The encapsulating layer is formed by using an encapsulating material to encapsulate the chips and at least a portion of the lead frame. The first grooves are filled with the encapsulating material. The electroplating layer is disposed on the second surface of the lead frame, and extends into the third grooves or into the third grooves and the second grooves.

Abstract: A method for manufacturing a light emitting device is provided. The method for manufacturing the light emitting device includes: providing a substrate with light emitting units disposed thereon; attaching the light emitting units to a carrier; removing the substrate; and transferring a portion of the light emitting units from the carrier to a driving substrate.