Patents Examined by Roberts Culbert
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Patent number: 9850403Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, (b) a cobalt accelerator selected from a compound having the formula: NR1R2R3 wherein R1, R2, and R3 are independently selected from hydrogen, carboxyalkyl, substituted carboxyalkyl, hydroxyalkyl, substituted hydroxyalkyl and aminocarbonylalkyl, wherein none or one of R1, R2, and R3 are hydrogen; dicarboxyheterocycles; heterocyclylalkyl-?-amino acids; N-(amidoalkyl)amino acids; unsubstituted heterocycles; alkyl-substituted heterocycles; substituted-alkyl-substituted heterocycles; N-aminoalkyl-?-amino acids; and combinations thereof, (c) a cobalt corrosion inhibitor, (d) an oxidizing agent that oxidizes a metal, and (e) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.Type: GrantFiled: May 24, 2017Date of Patent: December 26, 2017Assignee: Cabot Microelectronics CorporationInventors: Steven Kraft, Andrew Wolff, Phillip W. Carter, Kristin Hayes, Benjamin Petro
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Patent number: 9847211Abstract: A method for making a conductive film includes the steps of: depositing a conductive metal film on a substrate to form a metal-coated substrate; depositing a fiber pattern on the conductive metal film of the metal-coated substrate to form a masked substrate, the fiber pattern defining protected metal and exposed metal of the conductive metal film; removing the exposed metal from the conductive metal film of the masked substrate to form a protected conductive film; and removing the fiber pattern from the protected conductive film to expose the protected metal and provide a metal pattern on the substrate. An annealing step con be employed after depositing the fiber pattern to increase the surface area of contact between the fiber pattern and the conductive metal film.Type: GrantFiled: January 16, 2015Date of Patent: December 19, 2017Assignee: The University of AkronInventors: Yu Zhu, Tianda He
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Patent number: 9844888Abstract: A method for forming a cutting tool includes masking a metal base with one or more masks, the one or more masks including at least one variable permeability mask, and chemically etching the masked metal base to form a blade of the cutting tool.Type: GrantFiled: March 1, 2016Date of Patent: December 19, 2017Assignee: Hutchinson Technology IncorporatedInventors: Paul V. Pesavento, Peter F. Ladwig, Michael W. Davis, John A. Theget, Kurt C. Swanson, Joel B. Michaletz, Philip W. Anderson, Timothy A. McDaniel
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Patent number: 9845538Abstract: The object of the present invention is to provide: an etching agent for a titanium-based metal on a semiconductor substrate, which suppresses decomposition of hydrogen peroxide, has a long liquid service life, and has less need for controlling the concentration of hydrogen peroxide in the etching agent, even in the cases where the etching agent is used for a semiconductor substrate having the titanium-based metal and a metallic copper or a metal alloy; an etching method; and an etching agent preparation liquid for use by mixing with hydrogen peroxide.Type: GrantFiled: July 3, 2014Date of Patent: December 19, 2017Assignee: WAKO PURE CHEMICAL INDUSTRIES, LTD.Inventors: Takahiro Yokomizo, Hiroyuki Tsurumoto, Masahiko Kakizawa
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Patent number: 9837279Abstract: In accordance with an embodiment, a manufacturing method of a semiconductor device includes bringing a first catalyst into contact with a workpiece to form an oxide film on a surface of the workpiece, and bringing a second catalyst different from the first catalyst and the oxide film into contact with each other or moving the second catalyst and the oxide film closer to each other to elute the oxide film into a treatment liquid.Type: GrantFiled: March 10, 2016Date of Patent: December 5, 2017Assignee: Toshiba Memory CorporationInventors: Akifumi Gawase, Yukiteru Matsui, Takahiko Kawasaki
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Patent number: 9834705Abstract: Provided are a slurry for polishing tungsten and a method of polishing a substrate. The slurry according to an exemplary embodiment includes an abrasive configured to perform polishing and include particles having a positive zeta potential, a dispersant configure to disperse the abrasive, an oxidizer configured to oxidize a surface of the tungsten, a catalyst configured to promote oxidation of the tungsten, and a selectivity control agent configured to control a polishing selectivity and include an organic acid containing a carboxyl group. According to the slurry of the exemplary embodiment, a polishing selectivity between the tungsten and the insulation layer may be improved by suppressing a polishing rate of the insulation layer.Type: GrantFiled: February 18, 2016Date of Patent: December 5, 2017Assignee: UBMATERIALS INC.Inventor: Jin Hyung Park
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Patent number: 9831068Abstract: A method activates the inner surface of a substrate tube via plasma etching with a fluorine-containing etching gas. An exemplary method includes the steps of (i) supplying a supply flow of gas to the interior of a substrate tube, wherein the supply flow includes a main gas flow and a fluorine-containing etching gas flow, (ii) inducing a plasma via electromagnetic radiation to create a plasma zone within the substrate tube's interior, and (iii) longitudinally reciprocating the plasma zone over the length of the substrate tube between a reversal point near the supply side and a reversal point near the discharge side of the substrate tube. The flow of the fluorine-containing etching gas is typically provided when the plasma zone is near the supply side reversal point.Type: GrantFiled: July 1, 2016Date of Patent: November 28, 2017Assignee: Draka Comteq, B.V.Inventors: Igor Milicevic, Gertjan Krabshuis, Mattheus Jacobus Nicolaas Van Stralen, Peter Gerharts, Johannes Antoon Hartsuiker
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Patent number: 9828527Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of ?15 mV or below at a pH in the range of from 2 to 6 (B) N,N,N?,N?-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.Type: GrantFiled: October 27, 2016Date of Patent: November 28, 2017Assignee: BASF SEInventors: Yongqing Lan, Peter Przybylski, Zhenyu Bao, Julian Proelss
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Patent number: 9831095Abstract: A method for performing selective etching of a semiconductor material in solution having the following successive steps: a) providing a substrate having a layer of amorphous semiconductor material to be etched and a layer of crystalline semiconductor material; b) oxidizing the surfaces of the layers of amorphous semiconductor material and of crystalline semiconductor material so as to form a first protective layer at the surface of the amorphous semiconductor material and a second protective layer at the surface of the crystalline semiconductor material; c) etching the first protective layer and the layer of amorphous semiconductor material with an alkaline etching solution, the etch rate v1 of the first protective layer being higher than the etch rate v2 of the second protective layer.Type: GrantFiled: November 25, 2016Date of Patent: November 28, 2017Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Virginie Loup, Pascal Besson
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Patent number: 9818610Abstract: A method for treating a substrate is disclosed. The method includes forming a film stack on the substrate, the film stack comprising an underlying layer, a coating layer disposed above the underlying layer, and a patterning layer disposed above the coating layer. In the method, portions of the patterning layer are removed to form sidewalls of the patterning layer and expose portions of the coating layer, a carbon-containing layer is deposited on the exposed portions of the coating layer and non-sidewall portions of the patterning layer, and the carbon-containing layer and a portion of the coating layer are removed to expose other portions of the coating layer and the patterning layer. The method further includes repeating the deposition and removal of the carbon-coating layer at least until portions of the underlying layer are exposed.Type: GrantFiled: March 14, 2017Date of Patent: November 14, 2017Assignee: Tokyo Electron LimitedInventors: Hiroie Matsumoto, Andrew W. Metz, Yannick Feurprier, Katie Lutker-Lee
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Patent number: 9818584Abstract: An inductively coupled plasma source for a focused charged particle beam system includes a conductive shield within the plasma chamber in order to reduce capacitative coupling to the plasma. The internal conductive shield is maintained at substantially the same potential as the plasma source by a biasing electrode or by the plasma. The internal shield allows for a wider variety of cooling methods on the exterior of the plasma chamber.Type: GrantFiled: July 7, 2014Date of Patent: November 14, 2017Assignee: FEI CompanyInventors: Thomas G. Miller, Shouyin Zhang
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Patent number: 9805940Abstract: A plasma processing method includes forming plasma in a processing chamber; and performing etching to a film to be processed of a film structure that has previously been disposed on an upper surface of a wafer that includes a plurality of film layers. The film structure includes: a lower film including at least one film layer and a groove structure; and an upper film including at least one film layer that covers an inside and an upper end of the groove structure. The plasma processing method includes: removing the upper film by etching until an upper end of the groove structure of the lower film is exposed; performing etching to a film layer of the upper film inside the groove structure; and determining an end point by using a value of thickness of the film layer inside the groove structure of the lower film upon completion of the removing.Type: GrantFiled: March 4, 2016Date of Patent: October 31, 2017Assignee: Hitachi High-Technologies CorporationInventors: Kousuke Fukuchi, Shigeru Nakamoto, Tatehito Usui, Satomi Inoue
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Patent number: 9802221Abstract: A method including: a first step of forming a mask member having a structure in which a magnetic metal member provided with through-holes is in tight contact with one surface of a film; a second step of forming a plurality of preliminary opening patterns by subjecting the film to penetration processing by irradiating laser beams at predetermined regular positions in the plurality of through-holes; and a third step of performing laser processing so as to form each opening pattern over the corresponding preliminary opening pattern, is provided.Type: GrantFiled: July 24, 2015Date of Patent: October 31, 2017Assignee: V Technology Co., Ltd.Inventor: Michinobu Mizumura
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Patent number: 9796882Abstract: Described are compositions useful in methods for chemical-mechanical processing a surface of a substrate, especially a substrate that contains dielectric material, wherein the composition contains cyclodextrin and an alkylamine.Type: GrantFiled: December 29, 2016Date of Patent: October 24, 2017Assignee: Cabot Microelectronics CorporationInventors: Alexander W. Hains, Tina Li
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Patent number: 9786526Abstract: A method and an apparatus for etching microstructures and the like that provides improved selectivity to surrounding materials when etching silicon using xenon difluoride (XeF2). Etch selectivity is greatly enhanced with the addition of hydrogen to the process chamber.Type: GrantFiled: September 27, 2010Date of Patent: October 10, 2017Assignee: MEMSSTAR, LIMITEDInventor: Anthony O'Hara
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Patent number: 9779956Abstract: A method for selectively etching SiO and SiN with respect to SiGe or Si of a structure is provided. A plurality of cycles of atomic layer etching is provided, where each cycle comprises a fluorinated polymer deposition phase and an activation phase. The fluorinated polymer deposition phase comprises flowing a fluorinated polymer deposition gas comprising a fluorocarbon gas, forming the fluorinated polymer deposition gas into a plasma, which deposits a fluorocarbon polymer layer on the structure, and stopping the flow of the fluorinated polymer deposition gas. The activation phase comprises flowing an activation gas comprising an inert bombardment gas and H2, forming the activation gas into a plasma, wherein the inert bombardment gas activates fluorine in the fluorinated polymer which with the plasma components from H2 cause SiO and SiN to be selectively etched with respect to SiGe and Si, and stopping the flow of the activation gas.Type: GrantFiled: February 6, 2017Date of Patent: October 3, 2017Assignee: Lam Research CorporationInventors: Xin Zhang, Alan Jensen, Gerardo Delgadino, Daniel Le
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Patent number: 9780000Abstract: A method for forming spacers of a gate of a field-effect transistor is provided, including at least one step of forming a protective layer covering the gate; depositing a layer comprising carbon, said layer being disposed distant from said transistor; modifying the protective layer to form a modified protective layer; forming a protective film on the layer comprising carbon; removing the protective film on surfaces of the protective film that are perpendicular to a main implantation direction; selectively removing the layer comprising carbon; and at least one step of selectively removing the modified protective layer.Type: GrantFiled: November 25, 2016Date of Patent: October 3, 2017Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Nicolas Posseme, Maxime Garcia-Barros
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Patent number: 9771266Abstract: A method for processing carbon nanotubes includes positioning in a treatment chamber of a carbon nanotube processing apparatus a substrate having multiple carbon nanotubes bundled together and oriented substantially perpendicular to a surface of the substrate, and introducing a microwave into the treatment chamber from a planar antenna having multiple microwave radiation holes such that plasma of an etching gas is generated and that the plasma etches the carbon nanotubes starting from one end of the carbon nanotubes bundled together.Type: GrantFiled: June 22, 2015Date of Patent: September 26, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Takashi Matsumoto, Osayuki Akiyama
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Patent number: 9768025Abstract: A method of fabricating a semiconductor device includes forming a target layer on a substrate, forming a plurality of reference patterns at uniform intervals on the target layer, forming a plurality of spacers on the side surfaces of the reference patterns, forming a plurality of filling patterns in spaces left between the spacers, forming a surface-modified filling pattern by performing a first surface treatment on a portion of the plurality of filling patterns, forming a surface-modified reference pattern by performing a second surface treatment on a portion of the plurality of reference patterns, and removing the plurality of filling patterns and the plurality of reference patterns and leaving the surface-modified filling pattern and the surface-modified reference pattern on the target layer.Type: GrantFiled: June 16, 2016Date of Patent: September 19, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Yongkong Siew, Sung-Yup Jung
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Patent number: 9768024Abstract: A method includes forming a first insulating layer over a substrate, the first insulating layer having a non-planar top surface, the first insulating layer having a first etch rate. A second insulating layer is formed over the first insulating layer, the second insulating layer having a non-planar top surface, the second insulating layer having a second etch rate, the second etch rate being greater than the first etch rate. The second insulating layer is polished, the polishing partially removing the second insulating layer. The first insulating layer and the second insulating layer are non-selectively recessed.Type: GrantFiled: June 15, 2016Date of Patent: September 19, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Teng-Chun Tsai, Yung-Cheng Lu, Ying-Tsung Chen, Tien-I Bao