Patents Examined by Rodney McDonald
  • Patent number: 9831072
    Abstract: The present disclosure concerns sputter targets and sputtering methods. In particular, sputter targets and methods of sputtering using conventional sputter targets as well as sputter targets described herein, for highly uniform sputter deposition, are described.
    Type: Grant
    Filed: June 14, 2012
    Date of Patent: November 28, 2017
    Assignee: View, Inc.
    Inventors: Ronald M. Parker, Robert T. Rozbicki
  • Patent number: 9803272
    Abstract: According to the invention there is a method of depositing SiO2 onto a substrate by pulsed DC reactive sputtering which uses a sputtering gas mixture consisting essentially of oxygen and krypton.
    Type: Grant
    Filed: November 4, 2014
    Date of Patent: October 31, 2017
    Inventors: Yun Zhou, Rhonda Hyndman, Stephen R Burgess
  • Patent number: 9803276
    Abstract: The invention relates to methods and devices for producing one or more low-particle layers on substrates in a vacuum. The layers are deposited onto the substrate from a cylindrical source material, optionally together with a reactive gas component, by means of magnetron sputtering. The layer is deposited against the force of gravity in a sputter-up method. During the method or within the device, the structure or stochiometric atomic composition of the layers can optionally be modified using a plasma source. Multiple sputtering sources with different source materials can be provided in the device such that multiple layers of different compositions can be applied on the substrate at a high speed in one process.
    Type: Grant
    Filed: July 23, 2012
    Date of Patent: October 31, 2017
    Inventors: Michael Vergöhl, Daniel Rademacher, Hans-Ulrich Kricheldorf, Günter Bräuer
  • Patent number: 9783883
    Abstract: The present invention provides a method for depositing aluminum on a permanent Nd—Fe—B magnet including a step of cooling the chamber and the arc source by feeding a fluid of water at a cooling temperature of between 0° C. and 5° C. through the chamber and the arc source. The method also includes a step of adjusting a target source and a control magnet of the arc source in the chamber of the multi-arc ion plating apparatus to define a predetermined distance of between 1 cm and 10 cm. The step of depositing the film of aluminum further including steps of applying a current of between 50 A and 70 A and an electrical potential of between 100V and 200V to the target source of aluminum and directing the ions of aluminum using the arc source to the purified permanent Nd—Fe—B magnet for a time period of between 0.5 hours and 5 hours.
    Type: Grant
    Filed: February 11, 2016
    Date of Patent: October 10, 2017
    Inventors: Daoning Jia, Zhongjie Peng, Kunkun Yang
  • Patent number: 9779920
    Abstract: Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.
    Type: Grant
    Filed: August 11, 2014
    Date of Patent: October 3, 2017
    Inventors: Brian T. West, Michael S. Cox, Jeonghoon Oh
  • Patent number: 9771646
    Abstract: Described are methods of fabricating lithium sputter targets, lithium sputter targets, associated handling apparatus, and sputter methods including lithium targets. Various embodiments address adhesion of the lithium metal target to a support structure, avoiding and/or removing passivating coatings formed on the lithium target, uniformity of the lithium target as well as efficient cooling of lithium during sputtering. Target configurations used to compensate for non-uniformities in sputter plasma are described. Modular format lithium tiles and methods of fabrication are described. Rotary lithium sputter targets are also described.
    Type: Grant
    Filed: April 20, 2012
    Date of Patent: September 26, 2017
    Assignee: View, Inc.
    Inventors: Martin John Neumann, Que Anh Song Nguyen, Disha Mehtani, Anshu A. Pradhan, Robert T. Rozbicki, Dhairya Shrivastava, Trevor Frank, Todd Martin
  • Patent number: 9773650
    Abstract: A device and method for generating an electrical discharge are described. A first electrode (30) is operated to be a cathode relative to a second electrode (16). A gas is introduced into the chamber (14) by the first electrode (30). The first electrode (30) has a closed antechamber (32) with a metal wall (34). A tube (36) consisting of a different material than the wall (34) is provided through which the gas from the antechamber (32) is conducted into the chamber (14). A front portion of the tube (36) is embedded in the wall (34) of the antechamber (32). In its rear portion, the tube (36) has a free end projecting into the antechamber (32). A stable electrical discharge can be generated thereby in a particularly easy manner.
    Type: Grant
    Filed: October 26, 2015
    Date of Patent: September 26, 2017
    Assignee: CemeCon AG
    Inventor: Walter May
  • Patent number: 9751254
    Abstract: Apparatus for coating a substrate with a material in a chamber subject, during use, to substantial evacuation, which includes a coating station within the chamber for coating a substrate by sputtering and/or by evaporation; at least one treating station disposed in serial with the coating station and equipped with a plasma treater incorporating a plasma generator in sufficient proximity to the substrate to treat the substrate; a magnetic device for generating a magnetic field; at least one cylindrical electrode surrounding the magnetic device, the plasma treater incorporates a device for rotating the electrode about its longitudinal axis.
    Type: Grant
    Filed: October 1, 2012
    Date of Patent: September 5, 2017
    Inventors: Gary Barlow, Nicholas Copeland
  • Patent number: 9746678
    Abstract: Light wave separation lattices and methods of formation are provided herein. In some embodiments, a light wave separation lattice includes a first layer having the formula ROXNY, wherein the first layer has a first refractive index; and a second layer, different from the first layer, disposed atop the first layer, and having the formula R?OXNY, wherein the second layer has a second refractive index different from the first refractive index, and wherein R and R? are each one of a metal or a dielectric material. In some embodiments, a method of forming a light wave separation lattice includes depositing a first layer having a predetermined desired refractive index atop a substrate by a physical vapor deposition process; and depositing a second layer, different from the first layer, atop the first layer, wherein the second layer has a predetermined second refractive index different from the first refractive index.
    Type: Grant
    Filed: May 30, 2014
    Date of Patent: August 29, 2017
    Inventors: Daniel Lee Diehl, Yong Cao, Mingwei Zhu, Tai-Chou Papo Chen
  • Patent number: 9745655
    Abstract: A maintenance method for a sputtering device includes the steps of: moving a cathode carriage to take a plurality of targets and a plurality of cathodes out of a vacuum chamber; operating a plurality of cathode rotating apparatuses to rotate the targets and the cathodes so as to cause the targets to face upwards; operating a plurality of cathode sliding apparatuses to move the targets and the cathodes located in places at high height to places at low height; removing the targets from the cathodes to attach a plurality of new targets to the cathodes; returning the targets and the cathodes to an original height thereof; returning the targets and the cathodes to original rotation angles; and putting the targets and the cathodes back into the vacuum chamber.
    Type: Grant
    Filed: October 10, 2014
    Date of Patent: August 29, 2017
    Inventors: Tomotake Nashiki, Akira Hamada
  • Patent number: 9748081
    Abstract: Reliability of a semiconductor device is improved, and use efficiency of a sputtering apparatus is increased. When depositing thin films over a main surface of a semiconductor wafer using a magnetron sputtering apparatus in which a collimator is installed in a space between the semiconductor wafer and a target installed in a chamber, a region inner than a peripheral part of the collimator is made thinner than the peripheral part. Thus, it becomes possible to suppress deterioration in uniformity of the thin film in a wafer plane, which may occur as the integrated usage of the target increases.
    Type: Grant
    Filed: September 22, 2015
    Date of Patent: August 29, 2017
    Inventors: Takashi Hamaya, Hideaki Tsugane, Hidenori Suzuki
  • Patent number: 9748075
    Abstract: According to one embodiment, an apparatus for manufacturing a template includes a vacuum chamber, an electrode and an adjustor. The vacuum chamber includes an inlet and an exhaust port of a reactive gas. The vacuum chamber is capable of maintaining an atmosphere depressurized below atmospheric pressure. The electrode is provided in an interior of the vacuum chamber. A high frequency voltage is applied to the electrode. A substrate is placed on the electrode. The substrate has a back surface on a side of the electrode. A recess is provided in the back surface. The adjustor is inserted into the recess. The adjustor is insulative.
    Type: Grant
    Filed: August 1, 2016
    Date of Patent: August 29, 2017
    Assignee: Toshiba Memory Corporation
    Inventor: Tetsuo Takemoto
  • Patent number: 9732419
    Abstract: A gas blocking layer forming apparatus comprises a vacuum chamber that provides a space where a chemical vapor deposition process and a sputtering process are performed; a holding unit that is provided at a lower side within the vacuum chamber and mounts thereon a target object on which an organic/inorganic mixed multilayer gas blocking layer is formed; a neutral particle generation unit that is provided at an upper side within the vacuum chamber and generates a neutral particle beam having a high-density flux with a current density of about 10 A/m2 or more; and common sputtering devices that are provided at both sides of the neutral particle generation unit, wherein each common sputtering device has a sputtering target of which a surface is inclined toward a surface of the target object.
    Type: Grant
    Filed: February 15, 2013
    Date of Patent: August 15, 2017
    Inventors: MunPyo Hong, You Jong Lee, Yun-Sung Jang, Jun Young Lee
  • Patent number: 9732414
    Abstract: A sputtering target containing, as metal components, 0.5 to 45 mol % of Cr and remainder being Co, and containing, as non-metal components, two or more types of oxides including Ti oxide, wherein a structure of the sputtering target is configured from regions where oxides including at least Ti oxide are dispersed in Co (non-Cr-based regions), and a region where oxides other than Ti oxide are dispersed in Cr or Co—Cr (Cr-based region), and the non-Cr-based regions are scattered in the Cr-based region. An object of this invention is to provide a sputtering target for forming a granular film which suppresses the formation of coarse complex oxide grains and generates fewer particles during sputtering.
    Type: Grant
    Filed: December 12, 2012
    Date of Patent: August 15, 2017
    Assignee: JX Nippon Mining and Metals Corporation
    Inventors: Atsushi Sato, Yuki Ikeda, Atsutoshi Arakawa, Hideo Takami, Yuichiro Nakamura
  • Patent number: 9735002
    Abstract: A method and apparatus for removing volatile residues from a substrate are provided. In one embodiment, a method for volatile residues from a substrate includes providing a processing system having a load lock chamber and at least one processing chamber coupled to a transfer chamber, treating a substrate in the processing chamber with a chemistry comprising halogen, and removing volatile residues from the treated substrate in the load lock chamber.
    Type: Grant
    Filed: August 29, 2008
    Date of Patent: August 15, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Mark Naoshi Kawaguchi, Kin Pong Lo, Brett Christian Hoogensen, Sandy M. Wen, Steven H. Kim
  • Patent number: 9732413
    Abstract: Provided is a ruthenium alloy sputtering target as a ruthenium alloy sintered compact target obtained by sintering mixed powder of ruthenium powder and metal powder capable of creating oxides easier than ruthenium, wherein purity of the target excluding gas components is 99.95 wt % or higher, said target contains 5 at % to 60 at % of metal capable of creating oxides easier than ruthenium, relative density is 99% or higher, and oxygen content as impurities is 1000 ppm or less. This ruthenium alloy sputtering target is capable of reducing its oxygen content, reducing the generation of arcing and particles during sputtering, increasing the target strength by improving the sintered density, and improving the deposition quality by strictly restricting the amount of B and P impurities in the target in order to prevent the compositional variability of B and P added in minute amounts to the Si semiconductor.
    Type: Grant
    Filed: May 16, 2006
    Date of Patent: August 15, 2017
    Assignee: JX Nippon Mining & Metals Corporation
    Inventor: Kunihiro Oda
  • Patent number: 9721769
    Abstract: This invention relates to the in-vacuum rotational device on a cylindrical magnetron sputtering source where the target or target elements of the target construction of such device are enabled to rotate without the need of a vacuum to atmosphere or vacuum to coolant dynamic seal. This invention relates to the use of the device in vacuum plasma technology where a plasma discharge, or any other appropriate source of energy such as arcs, laser, which can be applied to the target or in its vicinity would produce suitable coating deposition or plasma treatment on components of different nature. This invention also relates but not exclusively to the use of the device in sputtering, magnetron sputtering, arc, plasma polymerization, laser ablation and plasma etching. This invention also relates to the use of such devices and control during non-reactive and reactive processes, with or without feedback plasma process control.
    Type: Grant
    Filed: January 14, 2013
    Date of Patent: August 1, 2017
    Assignee: GENCOA LTD.
    Inventor: Jonathan Price
  • Patent number: 9721771
    Abstract: A film forming apparatus includes a processing chamber, a gas supply unit, a stage, at least one holder, a power supply, at least one magnet and a magnet rotation unit. The gas supply unit is configured to supply a gas into the processing chamber. The stage is provided in the processing chamber, and has a center coinciding with a central axis which extends in a vertical direction. The stage is configured to cool the object to about ?50° C. or below. Each holder is configured to hold a target, and extends in an annular shape above the stage inside the processing chamber. The power supply is configured to generate a voltage to be applied to the target. Each magnet is provided outside the processing chamber and faces the target. The magnet rotation unit is configured to rotate the magnet about the central axis.
    Type: Grant
    Filed: March 3, 2016
    Date of Patent: August 1, 2017
    Inventor: Yusuke Suzuki
  • Patent number: 9711336
    Abstract: Provided is a backing plate-integrated metal sputtering target comprising a flange part that is formed integrally with a target of which periphery becomes a backing plate, wherein the flange part comprises a structure obtained by repeating partial forging. By increasing the mechanical strength of only the flange part of the target in a backing plate-integrated sputtering target as described above, it is possible to inhibit the deformation of the target during sputtering and a change in the conventional sputtering properties; thereby the formation of thin films having superior uniformity can be realized, and the yield and reliability of semiconductor products, which are being subject to further miniaturization and higher integration, can be improved.
    Type: Grant
    Filed: September 5, 2014
    Date of Patent: July 18, 2017
    Assignee: JX Nippon Mining & Metals Corporation
    Inventor: Shiro Tsukamoto
  • Patent number: 9711335
    Abstract: A sputtering system and method are disclosed. The system has at least one dual magnetron pair having a first magnetron and a second magnetron, each magnetron configured to support target material. The system also has a DMS component having a DC power source in connection with switching components and voltage sensors. The DMS component is configured to independently control an application of power to each of the magnetrons, and to provide measurements of voltages at each of the magnetrons. The system also has one or more actuators configured to control the voltages at each of the magnetrons using the measurements provided by the DMS component. The DMS component and the one or more actuators are configured to balance the consumption of the target material by controlling the power and the voltage applied to each of the magnetrons, in response to the measurements of voltages at each of the magnetrons.
    Type: Grant
    Filed: July 16, 2014
    Date of Patent: July 18, 2017
    Assignee: Advanced Energy Industries, Inc.
    Inventor: David Christie