Abstract: A method for creating a phase shift photomask which includes a layer of hard mask material, the inclusion of which improves the uniformity of critical dimensions on the photomask by minimizing the affect of macro and micro loading. The method for producing the phase shift photomask of the instant invention includes two etching processes. The first etching process etches the layer of hard mask, and the second etching process etches opaque material (and anti-reflective layer, if used) and phase shift layers.

Abstract: A mask is composed of a substrate, and a pattern having a transmission factor formed on the substrate by using a material, wherein an optical path length difference between light beams respectively passing the pattern and an area adjacent thereto is greater than ( m - 1 8 ) ⁢ λ and less than ( m + 1 8 ) ⁢ λ , where &lgr; is a wavelength of incident light, and m is an integer.

Abstract: A photomask of this invention includes a main pattern part for forming a main pattern in a resist film and an alignment mark part for forming, in the resist film, an alignment accuracy determining mark not penetrating the resist film in section after development of the resist film.

Abstract: A removable pellicle for a lithographic mask that provides active and robust particle protection, and which utilizes a traditional pellicle and two deployments of thermophoretic protection to keep particles off the mask. The removable pellicle is removably attached via a retaining structure to the mask substrate by magnetic attraction with either contacting or non-contacting magnetic capture mechanisms. The pellicle retaining structural is composed of an anchor piece secured to the mask substrate and a frame member containing a pellicle. The anchor piece and the frame member are in removable contact or non-contact by the magnetic capture or latching mechanism. In one embodiment, the frame member is retained in a floating (non-contact) relation to the anchor piece by magnetic levitation. The frame member and the anchor piece are provided with thermophoretic fins which are interdigitated to prevent particles from reaching the patterned area of the mask.

Abstract: The present invention overcomes many of the disadvantages of prior lithographic microfabrication processes while providing further improvements that can significantly enhance the ability to make more complicated semiconductor chips at lower cost. A new type of programmable structure for exposing a wafer allows the lithographic pattern to be changed under electronic control. This provides great flexibility, increasing the throughput and decreasing the cost of chip manufacture and providing numerous other advantages. The programmable structure consists of an array of shutters that can be programmed to either transmit light to the wafer (referred to as its “open” state) or not transmit light to the wafer (referred to as its “closed” state). The programmable structure can comprise or include an array of selective amplifiers.

Abstract: A new method of forming a bi-layer photoresist mask with a reduced critical dimension bias between isolated and dense lines and reduced edge roughness is described. A layer to be etched is provided on a semiconductor substrate wherein the surface of the layer has an uneven topography. The layer to be etched is coated with a first planarized photoresist layer which is baked. The first photoresist layer is coated with a second silicon-containing photoresist layer which is baked. Portions of the second photoresist layer not covered by a mask are exposed to actinic light. The exposed portions of the second photoresist layer are developed away. Then, portions of the first photoresist layer not covered by the second photoresist layer remaining are developed away in a dry development step wherein sufficient SO2 gas is included in the developing recipe to reduce microloading to form a bi-layer photoresist mask comprising the first and second photoresist layers remaining.

Abstract: An optical filter is manufactured by placing a photosensitive optical fiber in a spiral arrangement on a fiber holder, preferably having a spiral groove for holding the fiber, and exposing the fiber to ultraviolet light through a phase mask having a spiral diffraction grating, forming an in-fiber Bragg grating. The fiber can be conveniently scanned by an ultraviolet beam as the fiber holder and phase mask turn on a rotating stage. The fiber can be compactly packaged between the fiber holder and a cover. The fiber holder and cover can be formed by coating a substrate with layers of polymer material, the spiral groove being formed by photolithographic patterning of one of the layers.

Abstract: Projection-transfer methods, and segmented masks for use with reduction projection-transfer apparatus and methods, are disclosed that permit formation of large-scale device patterns on a mask substrate having limited dimensions. The overall mask pattern is divided into multiple subfields. For each subfield, a determination is made as to whether to divide the subfield into complementary subfields, based on the configuration and dimensions of certain features in the subfields such as islands and peninsular features. All resulting undivided subfields, and one of the complementary subfields of all the divided subfields, are situated in a main field of the mask on a mask substrate. The remaining complementary subfields are situated in side fields flanking the main field.