Abstract: A tunable gas flow equalizer is described. In an embodiment, the tunable flow equalizer includes a gas flow equalizer plate having primary opening and a secondary opening. The primary opening may surround a substrate support, and the secondary opening may be configured with a tuner. In an embodiment, the substrate support may be vertically adjustable with respect to the gas flow equalizer plate. The flow uniformity may be fine tuned by adjusting a tuner configured with a secondary opening in the gas flow equalizer plate and/or by adjusting the height of a vertically positionable substrate support plate having an inwardly tapered skirt 528 with respect to the gas flow equalizer plate 520.

Abstract: A vertical plasma processing apparatus for a semiconductor process includes an airtight auxiliary chamber defined by a casing having an insulative inner surface and integrated with a process container. The auxiliary chamber includes a plasma generation area extending over a length corresponding to a plurality of target substrates in a vertical direction. A partition plate having an insulative surface is located between a process field and the plasma generation. The partition plate includes a gas passage disposed over a length corresponding to the plurality of target substrates in a vertical direction. A process gas is exited while passing through the plasma generation area, and is then supplied through the gas passage to the process field.

Abstract: A processing device is provided, including a base which holds a processing target. A gas providing passage having a circular cross section is formed in the base, and provides gas to an outer circumference of the base.

Abstract: In an apparatus and method of vapor etching, a sample (S) to be etched is located in a main chamber 107 from which the atmosphere inside is evacuated. Etching gas is input into the main chamber 107 for a first period of time. Thereafter, the etching gas is evacuated from the main chamber 107 and cooling/purging gas is input into the main chamber for a second interval of time. Thereafter, the cooling/purging gas is evacuated from the main chamber 107. Desirably, the steps of inputting the etching gas into the main chamber 107 for the first period of time, evacuating the etching gas from the main chamber, inputting the cooling/purging gas into the main chamber 107 for the second period of time, and evacuating the cooling/purging gas from the main chamber are repeated until samples have been etched to a desired extent.

Abstract: When a substrate is etched by using a processing gas including a first gas containing halogen and carbon and having a carbon number of two or less per molecule, while supplying the processing gas toward the substrate independently from a central and a peripheral portion of a gas supply unit, which face the central and the periphery part of the substrate respectively, the processing gas is supplied such that a gas flow rate is greater in the central portion than in the peripheral portion. When the substrate is etched by using a processing gas including a second gas containing halogen and carbon and having a carbon number of three or more per molecule, the processing gas is supplied such that a gas flow rate is greater in the peripheral portion than in the central portion.

Abstract: Methods of surface finishing a component useful for a plasma processing apparatus are provided. The component includes at least one plasma-exposed quartz glass surface. The method includes mechanically polishing, chemically etching and cleaning the plasma-exposed surface to achieve a desired surface morphology. Quartz glass sealing surfaces of the component also can be finished by the methods. Plasma-exposed surface and sealing surfaces of the same component can be finished to different surface morphologies from each other.

Abstract: A plasma processing chamber having a lowered flow equalizer and a lower chamber liner. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. By equalizing the flow of the processing gases evacuated from the chamber, a more uniform etching may occur. By electrically coupling the flow equalizer to the chamber liners, the RF return path from the flow equalizer may run along the chamber liners and hence, reduce the amount of plasma drawn below the substrate during processing.

Abstract: A gas switching system for a gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus, is provided. The chamber can include multiple zones, and the gas switching section can supply different gases to the multiple zones. The switching section can switch the flows of one or more gases, such that one gas can be supplied to the chamber while another gas can be supplied to a by-pass line, and then switch the gas flows.

Abstract: Disclosed herein is a flat panel display manufacturing apparatus in a predetermined process is performed using plasma generated therein. In such a flat panel display manufacturing apparatus, a process gas is supplied into a chamber in an evenly diffused state to generate even plasma inside a symmetrical interior space of the chamber. Consequently, the flat panel display manufacturing apparatus can appropriately control flow rate of the plasma, thereby being capable of performing even processing on a large-scale substrate. In the flat panel display manufacturing apparatus, a substrate pedestal thereof is provided with a combination of vertical and horizontal shielding members, thereby being entirely protected from attack of the plasma, resulting in an increased life-span.

Abstract: A method and system is described for reducing particle contamination of a substrate in a deposition system. The deposition system comprises one or more particle diffusers disposed therein and configured to prevent or partially prevent the passage of film precursor particles, or break-up or partially break-up film precursor particles. The particle diffuser may be installed in the film precursor evaporation system, or the vapor delivery system, or the vapor distribution system, or two or more thereof.

Abstract: A gas distribution assembly for the ceiling of a plasma reactor includes a center fed hub and an equal path length distribution gas manifold underlying the center fed hub.

Abstract: A plasma reactor for processing a workpiece such as a semiconductor wafer has a housing defining a process chamber, a workpiece support configured to support a workpiece within the chamber during processing and comprising a plasma bias power electrode. The reactor further includes plural gas sources containing different gas species, plural process gas inlets and an array of valves capable of coupling any of said plural gas sources to any of said plural process gas inlets. The reactor also includes a controller governing said array of valves and is programmed to change the flow rates of gases through said inlets over time. A ceiling plasma source power electrode of the reactor has plural gas injection zones coupled to the respective process gas inlets. In a preferred embodiment, the plural gas sources comprise supplies containing, respectively, fluorocarbon or fluorohydrocarbon species with respectively different ratios of carbon and fluorine chemistries.

Abstract: A plasma reactor with a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface, and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck, a thermal model capable of simulating heat transfer between the evaporator and the surface based upon measurements from the temperature sensor and an agile control processor coupled to the thermal model and governing the backside gas pressure source in response to predictions from the model of changes in the selected pressure that would bring the temperature measured by the sensor closer to a desired temperature.

Abstract: A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species to become volatile. The first species can be one of several species deposited on the inner surface. A cleaning chemistry is injected into the processing chamber. The cleaning chemistry can be reactive with a second one of the species to convert the second species to the first species. The volatilized first species can also be output from the processing chamber. A system for cleaning the process chamber is also described.

Abstract: A showerhead electrode includes inner and outer steps at an outer periphery thereof, the outer step cooperating with a clamp ring which mechanically attaches the electrode to a backing plate.

Abstract: Vapor deposition systems and methods associated with the same are provided. The systems may be designed to include features that can promote high quality deposition; simplify manufacture, modification and use; as well as, reduce the footprint of the system, amongst other advantages.

Abstract: A gas head that, at low cost, is capable of suppressing any deactivation of radical gas and capable of uniformly introducing a raw material gas on a substrate; and a relevant thin-film manufacturing apparatus are provided. A gas head (13) according to the present invention includes a reactive gas introduction port (30A) for introduction of a reactive gas, a plurality of raw material gas introduction ports (30B) for introduction of a raw material gas, and a dispersion board (32) for dispersing the raw material gas, wherein the plurality of the raw material gas introduction ports (30B) are disposed so as to surround the periphery of the reactive gas introduction port (30A). The reactive gas having been introduced in the reactive gas introduction port (30A) is mixed with the raw material gas having been introduced through a plurality of raw material gas introduction ports (30B) and dispersed by means of the dispersion board (32).

Abstract: A semiconductor fabrication apparatus and a method of fabricating a semiconductor device using the same performs semiconductor etching and deposition processes at an edge of a semiconductor substrate after disposing the semiconductor substrate at a predetermined place in the semiconductor fabrication apparatus. The semiconductor fabrication apparatus has lower, middle and upper electrodes sequentially stacked. The semiconductor substrate is disposed on the middle electrode. Semiconductor etching and deposition processes are performed on the semiconductor substrate in the semiconductor fabrication apparatus. The semiconductor fabrication apparatus forms electrical fields along an edge of the middle electrode during performance of the semiconductor etching and deposition processes.

Abstract: Stagnation of gas used for substrate processing in an exhaust trap is prevented, and localized precipitation of components in the gas used for substrate processing is reduced.

Abstract: An operating method for a large dimension plasma enhanced atomic layer deposition cavity and an apparatus thereof are provided. The present invention reduces the time needed for filling the manufacturing gas into the large volume manufacturing cavity. Therefore, the plasma enhanced atomic layer deposition apparatus can switch the precursors rapidly to increase the thin film deposition rate, reduce the manufacturing gas consumption and lower the manufacturing cost.