Abstract: Methods of operating semiconductor memory devices with floating body transistors, using a silicon controlled rectifier principle are provided, as are semiconductor memory devices for performing such operations.

Abstract: In some embodiments, an in-memory-computing SRAM macro based on capacitive-coupling computing (C3) (which is referred to herein as “C3SRAM”) is provided. In some embodiments, a C3SRAM macro can support array-level fully parallel computation, multi-bit outputs, and configurable multi-bit inputs. The macro can include circuits embedded in bitcells and peripherals to perform hardware acceleration for neural networks with binarized weights and activations in some embodiments. In some embodiments, the macro utilizes analog-mixed-signal capacitive-coupling computing to evaluate the main computations of binary neural networks, binary-multiply-and-accumulate operations. Without needing to access the stored weights by individual row, the macro can assert all of its rows simultaneously and form an analog voltage at the read bitline node through capacitive voltage division, in some embodiments.

Abstract: The present disclosure relates to a monotonic counter whose value is represented by a number N of binary words of N memory cells of a non-volatile memory, and being able to implement a step increment operation wherein if only one first memory cell represents a first value different from zero, then a second value equal to the said first value incremented by two times the said step is written into a second memory cell of rank directly higher than the rank of the first memory cell; and if a third and a fourth memory cell of consecutive ranks represent, respectively, a third value and a fourth value different from zero, then the third value of the third memory cell of lower rank is erased.

Abstract: A semiconductor memory device includes a memory cell array, first and second pads, an interface circuit connected to the first pad and configured to transmit data input through the first pad to the memory cell array and output data received from the memory cell array through the first pad, a ZQ calibration circuit that is connected to the second pad and executes a ZQ calibration to generate a ZQ calibration value, and a sequencer configured to control the ZQ calibration circuit to apply the ZQ calibration value to the interface circuit. A command set is input through the first pad after reading data from the memory cell array to cause the interface circuit to output the data read from the memory cell array, and the ZQ calibration circuit executes the ZQ calibration after the command set is input and before the data is output through the first pad.

Abstract: A memory device includes an array of memory cells and a plurality of peripheral circuits operably coupled to the memory array. A power control circuit may be configured to individually control an application of power to each of the plurality of peripheral circuits and the array of memory cells. Inserting a switch device across the different power domains to achieve the same sequential wake-up path for the peripheral circuits connected to different power domains reduces peak current.

Abstract: Embodiments provide a read operation circuit, a semiconductor memory, and a read operation method. The read operation circuit includes: a DBI encoder configured to read read data from a memory bank, and determine whether to invert the read data according to the number of bits of low data in the read data to output global bus data for transmission through a global bus and DBI data for transmission through a DBI signal line, wherein a DBI port is configured to receive the DBI data; a parallel-to-serial conversion circuit configured to perform parallel-to-serial conversion on the global bus data to generate output data of the DQ port; a data buffer module connected to the memory bank through the global bus; and a precharge module connected to a precharge signal line and configured to set an initial state of the global bus to High.

Abstract: A memory device includes a memory cell array, a page buffer, a control logic circuit, a plurality of input/output pins, a data bus inversion (DBI) pin, and an interface circuit. The page buffer is connected to the memory cell array. The control logic circuit is configured to control an operation of the memory cell array. The plurality of input/output pins receive a plurality of data signals from the controller. The DBI pin receives a DBI signal from the controller. The interface circuit count a first number of bits having a logic value of 1 and a second number of bits having a logic value of 0 from the data signals and the DBI signal and provide the data signals to the page buffer or the control logic circuit based on the first number and the second number.

Abstract: A semiconductor memory device includes a memory cell connected between a bit line and a source line, a sense amplifier having a first transistor provided between at least two transistors of the sense amplifier and the bit line, and a controller which executes a read operation to read data stored by the memory cell. In the read operation, the controller applies a first voltage to the first transistor and a second voltage to the source line during a first time period, applies a third voltage to the first transistor and a fourth voltage to the source line during a second time period after the first time period, and applies the first voltage to the first transistor and a fifth voltage to the source line during a third time period after the second time period.

Abstract: An integrated circuit (IC) chip includes a plurality of interlayer channels; at least one data pad; an identification (ID) generation circuit suitable for generating a chip ID signal by decoding a command/address signal; a first transmission circuit suitable for transferring a plurality of internal data pieces to a transmission path by aligning a plurality of interlayer data pieces respectively transferred from the plurality of interlayer channels according to a plurality of strobe signals while selectively inverting the plurality of interlayer data pieces according to the chip ID signal; and a second transmission circuit suitable for transferring the plurality of internal data pieces from the transmission path to the at least one data pad.

Abstract: A semiconductor device having a three-dimensional (3D) structure is disclosed. The semiconductor device includes a first chip configured to include a peripheral circuit, and a second chip stacked on the first chip that is configured to include a first memory cell array and a second memory cell array. A plurality of transfer circuits are configured to connect a plurality of row lines of the first memory cell array and a plurality of row lines of the second memory cell array to respective global row lines is divided between the first chip and the second chip.

Abstract: A non-volatile memory device includes a substrate, a plurality of memory blocks grouped into pages, each including an alternating layer stack on the substrate, a plurality of channel holes in the alternating layer stack, and strings of memory cells disposed along the plurality of channel holes, and at least one dummy block adjacent to the plurality of memory blocks, each including an alternating dummy layer stack having multiple conductive layers and multiple dielectric layers alternately laminated on one another on the substrate, the at least one dummy block is disposed at an outskirt of each of the pages of the plurality of memory blocks.

Abstract: Systems, apparatuses, and methods related to arithmetic operations in memory are described. The arithmetic operations may be performed using bit strings and within a memory array without transferring the bit strings to circuitry external to the memory array. For instance, sensing circuitry that can include a sense amplifier and a compute component can be coupled to a memory array. A controller can be coupled to the sensing circuitry and can be configured to cause one or more bit strings to be transferred from the memory array to the sensing circuitry. In addition to the arithmetic operations, the sensing circuitry can also perform a logical operation using the one or more bit strings.

Abstract: Embodiments herein describe a multi-port memory system that includes one or more single port memories (e.g., a memory that can perform only one read or one write at any given time, referred to as a 1W or 1R memory). That is, the multi-port memory system can perform multiple read and writes in parallel (e.g., 1R/1W, 1R/3W, 2R/2W, 3R/1W, etc.) even though the memory in the system can only perform one read or one write at any given time. The advantage of doing so is a reduction in area and power.

Abstract: Various embodiments of the present application are directed towards a method for forming an integrated chip. The method includes forming a dielectric structure over a substrate. A first conductive wire is formed along the dielectric structure. The first conductive wire extends laterally along a first direction. A memory stack is formed on a top surface of the first conductive wire. A second conductive wire is formed over the memory stack. The second conductive wire extends laterally along a second direction orthogonal to the first direction. An upper conductive via is formed on the top surface of the first conductive wire. An upper surface of the upper conductive via is above the second conductive wire.

Abstract: Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

Abstract: First signaling indicative of instructions to enter a self-refresh (SREF) mode can be received concurrently by a plurality of memory dies. Responsive to a memory die of the plurality of memory dies entering the SREF mode, self-refreshing of memory banks of the memory die can be delayed, at the memory die and based on fuse states of an array of fuses of the memory die, an amount of time relative to receipt of the signaling by the memory die. Delaying self-refreshing of memory banks of memory dies in a staggered, or asynchronous, manner can evenly distribute power consumption of the memory dies so that the likelihood of an associated power spike is reduced or eliminated.

Abstract: A memory device includes a memory cell array, a voltage generation circuit generating one or more voltages supplied to the memory cell array, an input/output circuit receiving an address indicating a region in the memory cell array and a control circuit controlling operations of the memory cell array. The voltage generation circuit generates the voltages before a ready/busy signal changing from a ready state to a busy state.

Abstract: A memory device includes a memory cell array and a peripheral circuit. The memory cell array includes a plurality of memory regions each identified by a row address and a column address. The peripheral circuit accesses the memory cell array by performing, based on an address, a burst length and a burst address gap provided from a memory controller, a burst operation supporting a variable burst address gap. The burst address gap is a numerical difference between adjacent column addresses, on which the burst operation is to be performed.

Abstract: A semiconductor device may implement a command-over-data function on a multi-level signaling data bus architectures. The multi-level signaling data bus architecture may support a multi-level communication architecture that includes a plurality of channels each including conversion of M bitstreams to N multi-level signals, where M is greater than N. A bitstream includes a plurality of bits provided serially, with each bit of the bitstream provided over a period of time. The multi-level signaling data bus is adapted to transmit data using a first set of assigned states of the data bus, and to transmit commands using at least a second assigned state of the data bus.

Abstract: A memory device that operates at high speed is provided. The memory device includes first and second memory cells, first and second bit lines, first and second switches, and a sense amplifier. The sense amplifier comprises a first node and a second node. The first memory cell is electrically connected to the first node through the first bit line and the first switch, and the second memory cell is electrically connected to the second node through the second bit line and the second switch. The sense amplifier amplifies the potential difference between the first node and the second node. The first memory cell and the second memory cell include an oxide semiconductor in a channel formation region.