Abstract: A semiconductor device and a method of making the same. The device includes a substrate mounted on a carrier, the substrate comprising a High Electron Mobility Transistor (HEMT) having a source, a gate and a drain. The carrier comprises an electrically conductive shielding portion for providing shielding against electromagnetic interference associated with switching of the device during operation. The electrically conductive shielding portion is electrically isolated from the source and from the backside of the substrate.

Abstract: An LED light with an LED module which has one or more LEDs and an LED driver for power supply to the LEDs. The LED module is at least partially coated with a photoluminescent phosphor, which is configured for absorption of light energy from the LEDs and time-delayed emission of the stored light energy, and the LED driver has at least one electronic component for smoothing the current to be output to the LEDs.

Abstract: Discussed is a display apparatus including a substrate having a wiring electrode; and a semiconductor light-emitting device that emits light to an upper surface thereof, has a conductive electrode electrically connected to the wiring electrode on a lower surface thereof, and has at least a side surface of which is covered by a passivation layer, wherein the conductive electrode comprises: an insulating region further covered by the passivation layer, and a concave-convex region exposed by the passivation layer and electrically connected to the wiring electrode, a surface of the concave-convex portion being formed with concavity and convexity.

Abstract: Some embodiments include apparatuses and methods having a source material, a dielectric material over the source material, a select gate material over the dielectric material, a memory cell stack over the select gate material, a conductive plug located in an opening of the dielectric material and contacting a portion of the source material, and a channel material extending through the memory cell stack and the select gate material and contacting the conductive plug.

Abstract: Disclosed in an embodiment is a semiconductor device comprising: a semiconductor structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a second electrode electrically connected to the second conductive type semiconductor layer; and a reflective layer disposed under the second electrode, wherein the second conductive type semiconductor layer comprises a first sub-layer and a second sub-layer disposed between the first sub-layer and the active layer and having an aluminum (Al) composition higher than that of the first sub-layer, the reflective layer comes into contact with the lower surface of the second sub-layer, and the second electrode comes into contact with the first sub-layer.

Abstract: A light emitting device may include a light emitting structure, a transparent electrode, a first insulation layer, a first electrode, a second insulation layer and a second electrode. The light emitting structure may include a first semiconductor layer, an activation layer and a second semiconductor layer sequentially stacked. The transparent electrode may be formed on an upper surface of the second semiconductor layer. The transparent electrode may have at least one opening. The first insulation layer may be formed on an upper surface of the transparent electrode to fill the at least one opening. The first electrode may be formed on an upper surface of the first insulation layer. The first electrode may include a contact extending through the first insulation layer and connected with the transparent electrode. The second insulation layer may be formed on an upper surface of the first electrode. The second electrode may be formed on an upper surface of the second insulation layer.

Abstract: A light emitting device includes a first light emitting diode (LED). The first LED includes a first metallic layer. The first LED additionally includes a p-doped semiconductor layer over the first metallic layer. Additionally, the first LED includes a multi quantum well (MQW) semiconductor layer over the p-doped semiconductor layer. Moreover, the first LED includes an n-doped semiconductor layer over the MQW semiconductor layer. Next, the first LED includes a second metallic layer over the n-doped semiconductor layer. The light emitting device also includes a second LED over the first LED. Further, the light emitting device includes a third LED over the second LED.

Abstract: A display backplane includes a base, a plurality of driving electrodes disposed above the base, and a connection structure disposed on at least one of the plurality of driving electrodes. An orthographic projection of the connection structure on the base is within an orthographic projection of a corresponding driving electrode on the base; and the connection structure includes at least one conductive portion disposed at a first included angle with the corresponding driving electrode.

Abstract: Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first semiconductor layer, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer, wherein the first semiconductor layer, the active layer, and the second semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.

Abstract: Disclosed is a semiconductor light emitting device comprising: a substrate; a first semiconductor layer, which is provided on the substrate and has a first conductivity; an active layer, which is provided on the first semiconductor layer and generates ultraviolet light by electron-hole recombination; a second semiconductor layer, which is provided on the active layer and has a second conductivity different from the first conductivity; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer; a second region that includes a plurality of protruded parts of the active layer and the second semiconductor layer protruded from the first semiconductor layer as seen in cross-sectional view and recesses between the protruded parts; and a first region surrounding the second region.

Abstract: A light source device includes a substrate, a light emitting unit, a frame, a light permeable member, and a metal shield. An upper electrode layer and a lower electrode layer of the substrate are respectively disposed on two opposite sides of the substrate, and are electrically coupled to each other. The light emitting unit is disposed on the upper electrode layer. The frame is disposed on the substrate and is arranged around the light emitting unit. The light permeable member is disposed on the frame and covers the light emitting unit. The metal shield is fixed to an inner side of the frame and is connected to the ground pad of the upper electrode layer. The metal shield is arranged around the outer side of the light emitting unit.

Abstract: A semiconductor device includes: a first electrode provided on a semiconductor multilayer structure; a second electrode provided on a substrate; and a bonding metal layer which bonds the first electrode and the second electrode together. The bonding metal layer includes a gap inside.

Abstract: An optical sensor includes a semiconductor substrate having a first conductive type. The optical sensor further includes a photodiode disposed on the semiconductor substrate and a metal layer. The photodiode includes a first semiconductor layer having the first conductive type and a second semiconductor layer, formed on the first semiconductor layer, including a plurality of cathodes having a second conductive type. The first semiconductor layer is configured to collect photocurrent upon reception of incident light. The cathodes are configured to be electrically connected to the first semiconductor layer and the second semiconductor layer is configured to, based on the collected photocurrent, to track the incident light. The metal layer further includes a pinhole configured to collimate the incident light, and the plurality of cathodes form a rotational symmetry of order n with respect to an axis of the pinhole.

Abstract: An LED display driven by a dual-negative-voltage power supply is provided. The LED display includes a power supply interface and a display module. The power supply interface includes a first electrode, a second electrode, and a third electrode. The display module includes a substrate, the substrate is provided with a connection terminal having a first port, a second port, and a third port. The first electrode is coupled with the first port via a first wiring harness. The second electrode is coupled with the second port via a second wiring harness. The third electrode is coupled with the third port via a third wiring harness. A potential difference between the first electrode and the second electrode provides a first voltage. A potential difference between the first electrode and the third electrode provides a second voltage. The display module is configured to be powered with the first and second voltages.

Abstract: A display panel and a display device are provided in the present disclosure. The display panel includes a substrate and an array layer on the substrate, where the array layer includes a plurality of control units, one control unit includes a plurality of thin-film transistors, and the plurality of thin-film transistors in a same control unit is sequentially arranged along a ring-shaped path. The display panel further includes a plurality of light-emitting units on a side of the array layer away from the substrate. The plurality of light-emitting units and the plurality of control units are in a one-to-one correspondence. A light-emitting unit includes a plurality of light-emitting devices each having a first electrode. A plurality of first electrodes in a same light-emitting unit is sequentially arranged along an arrangement direction of the plurality of thin-film transistors in a control unit corresponding to the same light-emitting unit.

Abstract: An organic molecule is disclosed herein having a structure of formula I: wherein n=0 or 1 at each occurrence, m=1-n at each occurrence; i.e. if n is 1, m is 0 and vice versa, o=0 or 1 at each occurrence, and p=1-o at each occurrence; T is selected from the group consisting of a direct bond, NR3, Si(R3)2, C(R3)2, BR3, O, S, S(O) and S(O)2. V is selected from the group consisting of a direct bond, NR3, Si(R3)2, C(R3)2, BR3, O, S, S(O) and S(O)2. Z is at each occurrence independently form another selected from the group consisting of a direct bond, CR3R4, C?CR3R4, C?O, C?NR3, O, SiR3R4, S, S(O) and S(O)2.

Abstract: A phosphor combination may include a first phosphor and a second phosphor. The second phosphor may be a red-emitting quantum dot phosphor. The phosphor combination may optionally include a third phosphor that is a red-emitting phosphor with the formula (MB) (TA)3-2x(TC)1+2xO4-4xN4x:E. A conversion element may include the phosphor combination. An optoelectronic device may include the phosphor combination and a radiation-emitting semiconductor chip.

Abstract: A memory device includes a transistor and a memory cell. The memory cell includes a bottom electrode, a top electrode, and a dielectric structure. The top electrode is electrically connected to the transistor. The dielectric structure includes a thin portion and a thick portion. The thin portion is sandwiched between the bottom electrode and the top electrode. The thick portion is thicker than the thin portion and between the bottom electrode and the top electrode.

Abstract: An optoelectronic device including: a first, p-doped semiconductor layer and a second, n-doped semiconductor layer which are superposed and form a p-n junction; a first electrode electrically connected to the first semiconductor layer and forming an anode of the device; a gate positioned against at least one lateral flank of the first semiconductor layer; a second electrode, positioned against a lateral flank of the second semiconductor layer, electrically connected to the second semiconductor layer and electrically isolated from the first semiconductor layer; and in which a portion of the second electrode is positioned against the gate such that the second electrode is electrically connected to the gate and forms both a gate electrode and a cathode of the device.

Abstract: A semiconductor light emitting chip includes a substrate and an N-type semiconductor layer sequentially developed from the substrate, an active region, a P-type semiconductor layer, a reflective layer, at least two insulating layers, an anti-diffusion layer and an electrode set. One of the insulating layers is extended to surround the inner peripheral portion of the reflective layer, and another the insulating layer is extended to surround the outer peripheral portion of the reflective layer, such that the insulating layer isolates the anti-diffusion layer from the P-type semiconductor layer. The electrode set includes an N-type electrode and a P-type electrode, wherein the N-type electrode is electrically connected to the N-type semiconductor layer, and the P-type electrode is electrically connected to the P-type semiconductor layer.