Abstract: A semiconductor light emitting chip includes a substrate and an N-type semiconductor layer sequentially developed from the substrate, an active region, a P-type semiconductor layer, a reflective layer, at least two insulating layers, an anti-diffusion layer and an electrode set. One of the insulating layers is extended to surround the inner peripheral portion of the reflective layer, and another the insulating layer is extended to surround the outer peripheral portion of the reflective layer, such that the insulating layer isolates the anti-diffusion layer from the P-type semiconductor layer. The electrode set includes an N-type electrode and a P-type electrode, wherein the N-type electrode is electrically connected to the N-type semiconductor layer, and the P-type electrode is electrically connected to the P-type semiconductor layer.

Abstract: A light-emitting unit and a method for manufacturing the same are provided. The light-emitting unit includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer that are distributed in a stacking manner. At least one of the first semiconductor layer or the second semiconductor layer is at least in contact with a part of layer surfaces and a part of side of the light-emitting layer, the first semiconductor layer is insulated from the second semiconductor layer, and one of the first semiconductor layer and the second semiconductor layer is an N-type semiconductor layer, and the other is a P-type semiconductor layer. The present disclosure is conducive to increasing the light-emitting area and the light extraction efficiency of the light-emitting unit.

Abstract: An image sensor includes a substrate including a plurality of pixel regions and one or more pairs of dummy pixel regions; a pixel separation structure between two adjacent pixel regions among the plurality of pixel regions and including a first conductive layer; a dummy pixel separation structure between the one or more pairs of dummy pixel regions, electrically connected to the pixel separation structure, and including a second conductive layer; and a pixel separation contact disposed on the dummy pixel separation structure.

Abstract: Disclosed is a light emitting diode (LED) assembly having vertical type micro LEDs which are vertically aligned and is capable of significantly improving light efficiency, a light quantity, and an integration degree through optimized alignment of the vertical type micro LEDs each having a nano size or micro size. The LED assembly includes a substrate provided with a plurality of through holes formed in a thickness direction, micro LEDs each formed in a vertical type in which a vertical width is greater than a lateral width, and aligned in an upright state by being at least partially inserted into the through holes, and a first electrode deposited on a lower surface of the substrate to be connected to a first conductive layer and a second electrode deposited on an upper surface of the substrate to be connected to a second conductive layer.

Abstract: A package structure is provided. The package structure includes a substrate, a pair of electrodes, a lighting unit, a wall, and a package compound. The pair of electrodes and the wall are disposed on the substrate, and the wall and the substrate jointly define an accommodating space. The lighting unit is disposed in the accommodating space. The package compound is disposed in the accommodating space such that a top end of the package compound has a W-shaped cross section and the lighting unit is embedded in the package compound.

Abstract: A light emitting device for a display including a first LED stack, a second LED stack disposed thereunder, a third LED stack disposed thereunder and including first and second conductivity type semiconductor layers, a first bonding layer between the second and third LED stacks, a second bonding layer between the first and second LED stacks, an insulation layer between the second bonding layer and the second LED stack, lower buried layers passing through the second LED stack and the insulation layer and electrically connected to the first and second conductivity type semiconductor layers of the third LED stack, respectively, upper buried layers passing through the first LED stack and the second bonding layer and electrically connected to the lower buried layers, and upper connectors disposed on the first LED stack and including upper connectors covering and electrically connected to the upper buried layers, respectively.

Abstract: A red light emitting diode including an epitaxial stacked layer, a first and a second electrodes and a first and a second electrode pads is provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and a light emitting layer. A main light emitting wavelength of the light emitting layer falls in a red light range. The epitaxial stacked layer has a first side adjacent to the first semiconductor layer and a second side adjacent to the second semiconductor layer. The first and the second electrodes are respectively electrically connected to the first-type and the second-type semiconductor layers, and respectively located to the first and the second sides. The first and a second electrode pads are respectively disposed on the first and the second electrodes and respectively electrically connected to the first and the second electrodes. The first and the second electrode pads are located at the first side of the epitaxial stacked layer.

Abstract: A light emitting assembly comprising at least one of each of a solid state device and a thermal radiation source, couplable with a power supply constructed and arranged to power the solid state device and the thermal radiation source, to emit from the solid state device a first, relatively shorter wavelength radiation, and to emit from the thermal radiation source non-visible infrared radiation, and a down-converting luminophoric medium arranged in receiving relationship to said first, relatively shorter wavelength radiation, and the infrared radiation, and which in exposure to said first, relatively shorter wavelength radiation, and infrared radiation, is excited to responsively emit second, relatively longer wavelength radiation.

Abstract: Disclosed in an embodiment are a semiconductor device and a head lamp comprising the same, the semiconductor device comprising: a substrate; a plurality of semiconductor structures arranged at a center part of the substrate; first and second pads arranged at an edge part of the substrate; a first wiring line electrically connecting at least one of the plurality of semiconductor structures to the first pad; a second wiring line electrically connecting at least one of the plurality of semiconductor structures to the second pad; and a wavelength conversion layer arranged on the plurality of semiconductor structures, wherein the plurality of semiconductor structures is arranged to be spaced apart from each other in a first direction and a second direction, the first direction and the second direction cross each other, the interval distance between the plurality of semiconductor structures is 5 ?m to 40 ?m and the thickness of the wavelength conversion layer is 1 ?m to 50 ?m.

Abstract: A micro light emitting diode chip includes a light emitting layer, a first type semiconductor layer, and a second type semiconductor layer. The light emitting layer includes a metal element and a plurality of non-epitaxial media. The non-epitaxial media are separated from each other to disperse the metal element. A spacing between any two adjacent non-epitaxial media is less than 100 nanometers. The first type semiconductor layer is disposed on one side of the light emitting layer. The second type semiconductor layer is disposed on the other side of the light emitting layer.

Abstract: An optoelectronic semiconductor chip may include a semiconductor body, a first and second contact element, a chip carrier, an electrically conductive contact layer, an electrically conductive supply layer, an insulating layer between the contact layer and the supply layer, and at least one electrically conductive feed-through element embedded in the insulating layer. The feed-through element(s) may electrically connect the supply layer to the contact layer. A quantity and/or size of the feed-through elements may be greater on a second side of the semiconductor body opposite to the first side than on the first side.

Abstract: A LED chip includes a substrate, an N-type semiconductor layer, an active region, a P-type semiconductor layer, a transparent electric conductive layer, and a passivation protective layer stacked with each other in sequence. The passivation protective layer has a plurality holes corresponding to different positions of the transparent electric conductive layer respectively. A P-type electrode is electrically linked with the transparent electric conductive layer through said plurality of holes, while an N-type electrode is electrically linked with said N-type semiconductor layer.

Abstract: A semiconductor device includes an insulated circuit board in which a metal layer is formed on one surface of an insulating board and a semiconductor element having a polygonal shape when viewed in a plan view that is bonded to the metal layer via a bonding material. The metal layer of the insulated circuit board has a recess that exposes the insulating board at a position corresponding to at least one corner of the semiconductor element.

Abstract: An anti-parallel diode device includes a first semiconductor, a second semiconductor, a third semiconductor, and a third diode. The first semiconductor is of a first conductivity type, and the second semiconductor and the third semiconductor are of a second conductivity type. The second semiconductor is in contact with the first semiconductor, so that the first semiconductor and the second semiconductor form a first diode. The third semiconductor is in contact with the first semiconductor, so that the first semiconductor and the third semiconductor form a second diode. A first terminal of the third diode is electrically connected to the first semiconductor. The first terminal of the third diode is of the second conductivity type.

Abstract: The present invention provides a display panel and a display module, and the display panel includes: an array substrate; a light emitting device layer on the array substrate, including an anode layer on the array substrate, the anode layer including at least one metal layer; The display panel further includes at least one retaining wall on the array substrate; a distance between an edge of the at least one metal layer in the anode layer and a first boundary of the display panel is greater than a distance between the retaining wall and the first boundary.

Abstract: Embodiments of the invention include a microelectronic device that includes a first ultra thin substrate formed of organic dielectric material and conductive layers, a first mold material to integrate first radio frequency (RF) components with the first substrate, and a second ultra thin substrate being coupled to the first ultra thin substrate. The second ultra thin substrate formed of organic dielectric material and conductive layers. A second mold material integrates second radio frequency (RF) components with the second substrate.

Abstract: A light-emitting device including first, second, and third pixels, wherein: the first pixel includes a two-dimensional light-emitting cell including a vertical stack of a first semiconductor layer of a first conductivity type, of an active layer, and of a second semiconductor layer of the second conductivity type; each of the second and third pixels includes a three-dimensional light-emitting cell including a plurality of nanostructures of same dimensions regularly distributed across the surface of the pixel, each nanostructure including a doped pyramidal semiconductor core of the first conductivity type, an active layer coating the lateral walls of the core, and a doped semiconductor layer of the second conductivity type coating the active layer; and the nanostructures of the second and third pixels have different dimensions and/or a different spacing.

Abstract: A micro-LED chip includes an epitaxial layered structure, and first and second electrodes. The epitaxial layered structure includes first-type and second-type semiconductor layers, and a light emitting layer sandwiched therebetween. The first and second electrodes are electrically connected to the first-type and second-type semiconductor layers, respectively. The micro-LED chip has a first distinctive region on an electrode surface of the first electrode. The first distinctive region has a surface morphology different from that of an adjacent region of the electrode surface of the first electrode. A method for manufacturing a micro-LED device including at least one micro-LED chip is also provided.

Abstract: A light emitting display apparatus is disclosed, which can improve light extraction efficiency of light emitted from a light emitting diode. The light emitting display apparatus comprises a substrate including a plurality of pixel areas having an opening area, an uneven portion arranged in the opening area, and a light emitting diode arranged over the uneven portion, the uneven portion may have roughness average value of about 0.19 to about 0.29 for a unit size.

Abstract: A semiconductor device includes: a mounting board; and a semiconductor element disposed on the mounting board via metal bumps, wherein the semiconductor element includes a semiconductor stacked structure and first electrodes, the mounting board includes second electrodes, the metal bumps include a first layer in contact with the first electrodes of the semiconductor element and a second layer located on a side opposite to the first electrodes, an average crystal grain size of crystals included in the first layer is larger than an average crystal grain size of crystals included in the second layer, and the second layer is spaced apart from the first electrodes of the semiconductor element.