Abstract: A semiconductor device is provided. The semiconductor device includes a base substrate; a first well region and a second well region in the base substrate; a gate electrode structure, sidewall spacers, a doped source layer and a doped drain layer over the base substrate; a dielectric layer on the base substrate; and an isolation layer in the dielectric layer. The dielectric layer covers sidewalls of the sidewall spacers, the doped source layer and the doped drain layer, and exposes a top surface of the gate electrode structure. The isolation layer is in the gate electrode structure of the second well region and the base substrate of the second well region, and adjacent to the sidewalls of the sidewall spacer over the second well region.

Abstract: A display device includes a display panel including a display region, a first terminal region and a second terminal region facing each other across the display region, a first high power supply trunk wiring line disposed between the display region and the first terminal region, a second high power supply trunk wiring line disposed between the display region and the second terminal region, and a high power supply voltage line. The first high power supply trunk wiring line is connected via the first terminal region to a high power supply voltage source, and the second high power supply trunk wiring line is connected to the high power supply voltage source via the second terminal region and a flexible cable connected to the second terminal region.

Abstract: A sensor includes a first chip, a dam structure and a cover. The first chip includes a substrate, a sensing area and a low-k material layer. The sensing area is located on the surface of the substrate. The low-k material layer is located in the substrate. The dam structure is located on the first chip. The dam structure covers the edge of the low-k material layer. The cover is located on the dam structure and covers the sensing area. A manufacturing method of a sensor is also provided.

Abstract: An organic light emitting diode display device includes a first substrate, an organic light emitting diode including a first electrode, an organic layer and a second electrode and disposed on the first substrate, a conductive layer disposed on the organic light emitting diode, a second substrate disposed over the first substrate, a conductive black matrix disposed on a surface of the second substrate that faces the first substrate, a sealant boding the first substrate and the second substrate and a conductive fill material filled between the first substrate and the second substrate.

Abstract: A display device includes: a first display area including a first pixel area; a second display area including a second pixel area and a transmissive area adjacent to the second pixel area; a first pixel in the first pixel area; a second pixel in the second pixel area; and a dummy pixel in the transmissive area, wherein the dummy pixel includes a light emission portion emitting light on both sides.

Abstract: A chip includes a semiconductor substrate, an electrical connector over the semiconductor substrate, and a molding compound molding a lower part of the electrical connector therein. A top surface of the molding compound is lower than a top end of the electrical connector. A recess extends from the top surface of the molding compound into the molding compound.

Abstract: A package includes a first and a second package component. The first package component includes a first metal trace and a second metal trace at the surface of the first package component. The second metal trace is parallel to the first metal trace. The second metal trace includes a narrow metal trace portion having a first width, and a wide metal trace portion having a second width greater than the first width connected to the narrow metal trace portion. The second package component is over the first package component. The second package component includes a metal bump overlapping a portion of the first metal trace, and a conductive connection bonding the metal bump to the first metal trace. The conductive connection contacts a top surface and sidewalls of the first metal trace. The metal bump is neighboring the narrow metal trace portion.

Abstract: A light sensitive semiconductor structure including a pn-junction in a silicon substrate. The pn-junction includes a central part and an edge part around surrounding the central part, the edge part being in contact with a surface of the silicon substrate. The structure further includes a plasma shielding structure covering at least a depletion width of the pn-junction over at least a part of the edge part where the edge part contacts the surface of the silicon substrate.

Abstract: The present invention relates to methods of forming silicon nitride thin films on a substrate in a reaction chamber by plasma enhanced atomic layer deposition (PEALD). Exemplary methods include the steps of (i) introducing an octahalotrisilane Si3X8 silicon precursor, such as octachlorotrisilane (OCTS) Si3Cl8, into a reaction space containing a substrate, (ii) introducing a nitrogen containing plasma into the reaction space, and wherein steps (i), (ii) and any steps in between constitute one cycle, and repeating said cycles a plurality of times until an atomic layer nitride film having a desired thickness is obtained.

Abstract: In an imaging element including a polarizer, accuracy of obtained polarization information is improved. The imaging element includes a polarizer and a photoelectric conversion element, from the incident light side. A plurality of types of polarizing members is arranged on the polarizer. The plurality of types of polarizing members is polarizing members having the same internal structures, and is formed as the plurality of types of polarizing members by rotationally moving or symmetrically moving one of the polarizing members. The photoelectric conversion element converts light incident through each of the plurality of types of polarizing members into electric charges.

Abstract: A display device and a method for manufacturing the same are disclosed, in which a cathode electrode is not separated from an organic light emitting layer. The method includes forming pixels on a display area on a first substrate, forming an encapsulation film to cover the display area, attaching a protective film onto the encapsulation film, and removing the protective film. The protective film includes a substrate layer and an adhesive layer formed at an edge area of at least one side of the substrate layer.

Abstract: A wafer having on one side a device area with a plurality of devices is processed by providing a protective film and applying the protective film, for covering the devices on the wafer, to the one side of the wafer, so that a front surface of the protective film is in direct contact with the one side of the wafer. The protective film is heated during and/or after applying the protective film to the one side of the wafer, so that the protective film is attached to the one side of the wafer, and the side of the wafer opposite to the one side is processed. Further, the invention relates to a method of processing such a wafer in which a liquid adhesive is dispensed only onto a peripheral portion of a protective film and/or only onto a peripheral portion of the wafer.

Abstract: A display device includes a flexible display panel and a protective film. The protective film includes a film main body and a first adhesion portion. The film main body has a first surface contacting the flexible display panel and a first recess portion recessed from the first surface, and the first adhesion portion is in the first recess portion.

Abstract: An InN nanorod epitaxial wafer grown on an aluminum foil substrate (1) sequentially comprises the aluminum foil substrate (1), an amorphous aluminum oxide layer (2), an AlN layer (3) and an InN nanorod layer, (4) from bottom to top. The wafer can be prepared by pretreating the aluminum foil substrate with an oxidized surface and carrying out an in-situ annealing treatment; then, in a molecular beam epitaxial growth process, forming AlN nucleation sites on the annealed aluminum foil substrate, nucleating on the AlN and growing InN nanorods on the AlN, where the substrate temperature is 400-700° C., the pressure of a reaction chamber is 4.0-10.0×10?5 Torr and the beam ratio of V/III is 20-40.

Abstract: According to an aspect, a display apparatus includes: a substrate; a plurality of pixels disposed on the substrate; a plurality of inorganic light emitting elements that are provided in the pixels, respectively; an electrode that is translucent and provided on one surface side of the substrate and that is coupled to one of the inorganic light emitting elements; a first conductive layer that is translucent and provided on the one surface side of the substrate and that covers the electrode; and a cover member that is translucent and provided on the one surface side of the substrate and that covers the first conductive layer. A sheet resistance value of the first conductive layer is higher than a sheet resistance value of the electrode.

Abstract: A display apparatus of an embodiment includes a first area and a second area disposed adjacent to the first area in a plan view, and includes a first electrode disposed in the first area and a second electrode disposed in the second area, a hole transport region disposed on the first electrode and the second electrode, an emission layer disposed on the hole transport region to overlap the first electrode and not to overlap the second electrode, a buffer layer disposed on the emission layer in the first area and the second area, a surface energy controlling layer disposed on the buffer layer to overlap the second electrode and not to overlap the first electrode, and a third electrode disposed on the buffer layer to overlap the first electrode and not to overlap the surface energy controlling layer. Such a display apparatus may have improved transmittance.

Abstract: A display apparatus includes: a substrate comprising a main display area, a component area, and a peripheral area; a main pixel electrode at the main display area of the substrate; a main thin-film transistor at the main display area of the substrate and electrically connected to the main pixel electrode; an auxiliary pixel electrode at the component area of the substrate; an auxiliary thin-film transistor at the peripheral area of the substrate; and a connecting wire connected to the auxiliary pixel electrode and including a thin portion having a thickness less than a thickness of the auxiliary pixel electrode, wherein the connecting wire electrically connects the auxiliary thin-film transistor to the auxiliary pixel electrode.

Abstract: The present application relates to the field of display technology, and in particular, to a display panel, method for manufacturing a display panel and display device. The display panel includes: a base substrate; a pixel layer, provided on the base substrate and comprising a plurality of pixel islands; and a microlens layer, provided on a surface of the pixel layer facing away from the base substrate. Each of pixel islands includes a plurality of sub-pixels that emit light of a same color and are seamlessly coupled to each other, and the light emitted by the plurality of sub-pixels in each of the pixel islands is refracted by the microlens layer to be dispersed to different pixel areas.

Abstract: An optical coupling device includes a light receiving element including a first output terminal and a second output terminal, a light emitting element provided on the light receiving element, a first switching element, a first electrode plate, and a sealing member. The first switching element includes a first main terminal connected to the first output terminal, a first control terminal connected to the second output terminal, and a second main terminal. An upper surface of the first electrode plate is connected to the second main terminal. The sealing member covers the light receiving element, the light emitting element, and the first switching element. A lower surface of the first electrode plate is exposed on a lower surface of the sealing member. The lower surface of the first electrode plate and the lower surface of the sealing member form the same plane.

Abstract: An organic light emitting diode (OLED) display panel and an electronic device are provided. The OLED display includes an under-screen camera display region and a normal display region surrounding the under-screen camera display region. A pixel density of the under-screen camera display region is less than a pixel density of the normal display region. By lowering the pixel density of the under-screen camera display region, and thereby raising a light transmittance of the under-screen camera display region, an under-screen camera and a true full screen display are realized.