Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, memory stack structures vertically extending through the alternating stack, a retro-stepped dielectric material portion overlying stepped surfaces of the alternating stack, a laterally perforated support pillar structure vertically extending through the alternating stack and the retro-stepped dielectric material portion, and a layer contact via structure laterally surrounded by the laterally perforated support pillar structure and contacting a top surface of a topmost electrically conductive layer within an area of the laterally perforated support pillar structure. Each electrically conductive layer within the area of the laterally perforated support pillar structure extends through the lateral openings.

Abstract: The present disclosure provides a module structure and an electronic apparatus. The module structure includes: a sensing component, a sensing surface and a display component disposed between the sensing component and the sensing surface; an air layer disposed between the display component and the sensing component; and a scattering layer disposed between the air layer and the display component; wherein light generated by the display component is reflected or refracted on the sensing surface to form signal light carrying an information, and the signal light is transmitted through the scattering layer and the air layer and received by the sensing component. The present disclosure can realize decoupling between the sensing component and the display component, reduce the influence of a bonding stress on a display effect of the display component, and avoid the influence of the air layer on the realization of the function of the sensing component.

Abstract: Light-emitting devices are described herein. A device includes a packaging substrate having a top surface and a bottom surface and a hybridized device having a bottom surface on the top surface of the packaging substrate. The hybridized device includes a silicon backplane that includes input/output (I/O) pins and a light-emitting diode (LED) array having a bottom surface on a top surface of the silicon backplane. Passive components are disposed on the top surface of the packaging substrate. Conductive connectors are electrically coupled between the top surface of the hybridized device and the top surface of the packaging substrate.

Abstract: A semiconductor package includes a substrate, a preformed feeding element, a preformed shielding element, and an encapsulant. The preformed feeding element is disposed on the substrate and the preformed feeding element is disposed on the substrate and adjacent to the preformed feeding element. The encapsulant encapsulates the preformed feeding element and the preformed shielding element.

Abstract: A light-emitting module includes a substrate, at least one light-emitting element disposed on the substrate, at least one electronic component disposed on the substrate, a lens disposed apart from the at least one light-emitting element and the at least one electronic component to face the at least one light-emitting element and the at least one electronic component, and at least one plate-shaped covering member each disposed between the lens and a corresponding one of the at least one electronic component. The at least one covering member contains a coloring agent.

Abstract: A light emitting device includes a substrate including first, second, third and fourth wiring portions on a top surface of a base member and arrayed in a first direction, and a connection wiring portion connecting the second and third wiring portions. The connection wiring portion includes first and second connection ends respectively connected with the second and third wiring portions, and a connection central portion connecting the first and second connection ends and having a maximum width in a second direction different from each of a maximum width of the first connection end and a maximum width of the second connection end. In the second direction, at least a part of the connection wiring portion has a width narrower than each of a maximum width of the second wiring portion and a maximum width of the third wiring portion.

Abstract: A color conversion substrate includes a base including a first light transmitting region and a light shielding region around the first light transmitting region; a first color filter on the base in the first light transmitting region; a first wavelength conversion pattern in a first microcavity on the first color filter including a first wavelength shifter; and a light shielding member on the base and in the light shielding region. The first microcavity includes an open side, and the light shielding member directly contacts the first wavelength conversion pattern at the open side of the first microcavity.

Abstract: A light emitting diode apparatus is provided. The light emitting diode apparatus includes a wavelength conversion layer, a light emitting diode layer, a light transmission layer, and a sheath layer. The wavelength conversion layer has a first refractive index. The light emitting diode layer includes a base layer arranged on the wavelength conversion layer, and a light emitting structure layer arranged on the base layer. The light transmission layer is arranged on the wavelength conversion layer, surrounds a sidewall of the light emitting diode layer and contacts the sidewall of the light emitting diode layer, and has a second refractive index. The sheath layer is arranged to cover the light emitting diode layer and the light transmission layer, and has a third refractive index less than the second refractive index.

Abstract: A display device, includes: a substrate; a plurality of pixels provided on the substrate; and a plurality of light emitting elements provided in each of the pixels. A first distance between a top surface of the substrate and one of the light emitting elements in a direction perpendicular to the top surface of the substrate, in a center portion of a display region of the substrate, is different from a second distance between the top surface of the substrate and another one of the light emitting elements in the direction perpendicular to the top surface of the substrate, in a periphery portion of the display region.

Abstract: A semiconductor device including a data storage pattern is provided. The semiconductor device includes: specific resistivities a first conductive line disposed on a substrate and extending in a first direction; a second conductive line disposed above the first metal wiring; a plurality of variable resistance structures each of which includes a plurality of electrodes and a plurality of variable resistance patterns alternately stacked between the first metal wiring and the second metal wiring, wherein the plurality of variable resistance patterns are formed of a variable resistance material having a same composition, and the plurality of electrodes have different material characteristics such as different specific resistivities.

Abstract: A static random access memory (SRAM) cell includes a first p-type semiconductor fin, a first dielectric fin, a first hybrid fin, a second hybrid fin, a second dielectric fin, and a second p-type semiconductor fin disposed in this order along a first direction and oriented lengthwise along a second direction, where each of the first and the second hybrid fins has a first portion including an n-type semiconductor material and a second portion including a dielectric material. The SRAM cell further includes n-type source/drain (S/D) epitaxial features disposed over each of the first and the second p-type semiconductor fins, p-type S/D epitaxial features disposed over the first portion of each of the first and the second hybrid fins, and S/D contacts physically contacting each of the p-type S/D epitaxial features and the second portion of each of the first and the second hybrid fins.

Abstract: A display device comprises: a substrate; a plurality of pixels provided to the substrate; and a plurality of light emitting elements provided to the respective pixels. The light emitting elements include a plurality of first light emitting elements, a plurality of second light emitting elements, and a plurality of third light emitting elements, the first light emitting elements are arrayed on the substrate in a first direction and a second direction, the third light emitting element has a part not overlapping the first light emitting element or the second light emitting element when one of the pixels is viewed in the first direction, and the third light emitting element has a part not overlapping the first light emitting element or the second light emitting element when one of the pixels is viewed in the second direction.

Abstract: The present application provides an LED substrate and a method for manufacturing an LED display panel. The LED substrate comprises a substrate, a colloid, and LED chips. The colloid is set on the substrate, and the LED chips comprise a first end surface and a second end surface, wherein the first end surface and the second end surface are set opposite to each other, the first end surface is for fixedly connecting a thin film transistor substrate, and the second end surface is a light outputting surface. The second end surface of the LED chips is fixedly set on the substrate by the colloid.

Abstract: A wiring board has a metal-made base having a front surface and a back surface, an insulating frame body bonded to the front surface of the base through a bonding layer made of bonding material, a seating provided in an area that is located at an inner side with respect to the frame body on the front surface of the base, a mounting area where a component is supposed to be mounted on the front surface of the base, and a groove formed on the front surface of the base. The groove is arranged in at least an area between the mounting area and the seating on the front surface in plan view, and extends in a direction crossing an opposing direction of the mounting area and the seating.

Abstract: The present disclosure provides a bonding method for a semiconductor substrate, which may improve flatness of a bonded substrate. The present disclosure further provides a bonded semiconductor substrate. The semiconductor substrate is thermally treated prior to bonding, and oxygen precipitates in the semiconductor substrate are partially or totally converted to interstitial oxygen atoms in the thermal treatment.

Abstract: A three-dimensional semiconductor memory device includes a stack structure disposed on a substrate and including lower and upper stack structures, first and second isolation trenches defining the stack structure, extending in a first direction, and spaced apart from each other in a second direction, a middle isolation trench penetrating the upper stack structure between the first and second isolation trenches and extending in the first direction, and a horizontal isolation pattern connected to the middle isolation trench and dividing the upper stack structure in the second direction. The horizontal isolation pattern includes horizontal isolation portions, each of which extends in the first direction and is offset from an extension line of the middle isolation trench in the second direction or an opposite direction to the second direction.

Abstract: A method to make light-emitting diode (LED) units include arranging LEDs in a pattern, forming an optically transparent spacer layer over the LEDs, forming an optically reflective layer over the LEDs, and singulating the LEDs into LED units. The method may further include, after forming the optically transparent spacer layer and before singulating the LEDs, forming a secondary light-emitting layer that conforms to the LEDs, cutting the LEDs to form LED groups having a same arrangement, spacing the LED groups on a support, and forming the optically reflective layer in spaces between the LED groups.

Abstract: A semiconductor device includes a semiconductor chip in which a field effect transistor mainly containing GaN is formed on a surface of a SiC semiconductor substrate. The semiconductor device includes a metal base on which a back surface of the semiconductor chip is mounted through a conductive adhesive material containing Ag and a resin mold configured to seal the semiconductor chip. A metal having wettability lower than wettability of Au or Cu with respect to Ag is exposed in a region extending along an edge of the back surface.

Abstract: A display device includes: a substrate including: first to third subpixels, an insulating layer including a trench on the substrate between at least two among the first to third subpixels, a first electrode on the insulating layer in each of the first to third subpixels, a fence in each of the first to third subpixels, the fence surrounding an edge of the first electrode, a light-emitting layer on the first electrode, the fence, and the insulating layer, a second electrode on the light-emitting layer, and a color filter layer including: a first color filter in the first subpixel, a second color filter in the second subpixel, and a third color filter in the third subpixel, wherein the second color filter is wider than the first color filter, and wherein the second color filter partially overlaps the first subpixel.

Abstract: An OLED including a substrate; a circuit region; reflective metal layers on the circuit region and including first to third reflective metal layers spaced apart from each other; an insulating layer including first to third insulating regions covering upper surfaces of the reflective metal layers and having a first to third thicknesses that are different from one another; first to third via plugs penetrating through the insulating layer to contact the reflective metal layers, first electrodes in contact with the via plugs, and covering a portion of an upper surface of the insulating layer; an organic light emitting layer on the first electrodes; and a second electrode on the organic light emitting layer, wherein the first to third via plugs include tungsten.