Abstract: A delay control circuit includes: a delay cell including a plurality of bias inverters, first RC circuits, and second RC circuits, the delay cell activates a number of first RC circuits in response to a step code, delays a signal by a delay time based on the number of the activated first RC circuits, and outputs the delayed signal; a ZQ calibrator including pull-up and pull-down circuits, the ZQ calibrator adjusts a number of activated pull-up and pull-down circuits, and inputs a pull-up and pull-down voltage, based on a calibration code to the bias inverters; and a step adjuster including a first ring oscillator including test delay cells, the step adjuster determining characteristics of the first and second RC circuits and activates a number of second RC circuits based on the characteristics and an operating frequency of the delay control circuit.

Abstract: The present disclosure provides a storage array, and an interconnection structure and a method for operating thereof. The storage array includes: storage units and transistors located in each column and each row, each transistor having a first source/drain and a second source/drain; wherein, a storage unit in an odd-numbered column connected to a first bit line and a second source line; the first source/drain of a transistor in an odd-numbered column is connected to a first source line; the second source/drain of a transistor in an odd-numbered column is connected to a second source line; a storage unit in an even-numbered column connected to a second bit line and a first source line; the first source/drain of a transistor in an even-numbered column is connected to a second source line; and the second source/drain of a transistor in an even-numbered column is connected to a first source line.

Abstract: Provided is a memory device, including a plurality of memory banks. Each of the memory banks includes a memory array and a driver circuit. The driver circuit is coupled to the memory array, arranged to operably write data to the memory array according to write signals. The driver circuit includes a plurality of row driver circuits each coupled to a row of the memory cells. A global driver power circuit coupled to the row driver circuits in the plurality of memory banks to provide a global driver power. Each of the memory banks further includes a local driver power circuit coupled to respective row driver circuits in each of the memory banks to provide a local driver power. The local driver power circuit includes a first P-type MTCMOS coupled to a supply voltage and a control signal, controlled by the control signal to provide a local multi-threshold power signal to the respective row driver circuits.

Abstract: A memory device is provided. The memory device includes a plurality of memory cells arranged in a matrix of a plurality of rows and a plurality of columns. A first column of the plurality of columns of the matrix includes a first plurality of memory cells of the plurality of memory cells, a first pair of bit lines connected to each of the first plurality of bit cells, and a second pair of bit lines connectable to the first pair of bit lines through a plurality of switches.

Abstract: Systems and methods of memory operation that provide a hardware-based reset of an unresponsive memory device are disclosed. In one embodiment, an exemplary system may comprise a semiconductor memory device having a memory array, a controller that may include a firmware component for controlling memory operations, and a reset circuit including power-up circuitry and timeout circuitry. The reset circuit may be configured to detect when the memory device is in a non-responsive state and reset the memory device without using any internal controller components potentially impacted/affected by the non-responsive state.

Abstract: Control logic in a memory device identifies a set of a plurality of memory cells configured as multi-level cell (MLC) memory to be programmed during a program operation and causes, at a first time during a program operation, a first programming pulse to be applied to a memory cell of the memory array to be programmed to a first programming level. The control logic further performs a program verify operation corresponding to the first programming level and compares a threshold voltage of the memory cell to one or more program verify voltage levels of the program verify operation to determine whether a condition is satisfied. The control logic further executes a level shifting operation in response to the condition to be satisfied.

Abstract: The present application discloses a design for testability circuit of an SRAM. In a write path circuit detection mode of a fault diagnosis logic control module, a write path circuit is in an on state, a write data bit multiplexer is in a selected state, a read data bit multiplexer is in a deselected state, a read path circuit is in an on state, and a memory cell is in a selected state; in a read path circuit detection mode, the write path circuit is in an off state, the write data bit multiplexer is in a selected state, the read data bit multiplexer is in a deselected state, the read path circuit is in an on state, and the memory cell is in a deselected state. A bit line signal end is connected to a test signal outputted by a signal generation circuit.

Abstract: Methods, systems, and devices for a single plate configuration and memory array operation are described. A non-volatile memory array may utilize a single plate to cover a subset of the array. One or more memory cells of the subset may be selected by operating the plate and an access line of an unselected memory cell at a fixed voltage. A second voltage may be applied to an access line of the selected cell, and subsequently reduced to perform an access operation. Removing the applied voltage may allow for the memory cell to undergo a recovery period prior to a subsequent access operation.

Abstract: A solid-state drive (SSD) controller is operable to determine whether M supply voltage(s) supplied to a NAND flash memory is correct. The SSD controller includes: a voltage detector configured to receive the M supply voltage(s) and thereby generate a detection result, wherein the M is a positive integer; a voltage inquiry module configured to output an inquiry signal to the NAND flash memory and thereby receive a response signal from the NAND flash memory, and configured to generate an inquiry result according to the response signal, wherein the inquiry result indicates M specified supply voltage(s) applicable to the NAND flash memory; and a voltage decision module configured to receive the detection result and the inquiry result, and configured to determine whether the M supply voltage(s) is/are equivalent to the M specified voltage(s) according to the detection result and the inquiry result and thereby generate a decision result.

Abstract: A memory device may include: a memory region, an operation control unit configured to determine a toggling reference cycle and count for a first interval, configured to determine whether an error has occurred in a toggling input cycle and count of an external control signal, in order to control a data input/output operation for the memory region based on the toggling reference cycle and count for a second interval subsequent to the first interval, and configured to determine whether an input defense mode has been entered based on a result of the error determination, and an operation execution unit configured to perform a set operation in response to the external control signal for the second interval and configured to perform, when the input defense mode has been entered, a defense operation that is predefined in the input defense mode in response to an output signal of the operation control unit.

Abstract: Electrically conductive line side-by-side running distance equalization and related apparatuses and systems. An apparatus includes a first sense amplifier, a second sense amplifier, a first pair of lines, and a second pair of lines. The first sense amplifier includes a first pull-up sense amplifier and a first pull-down sense amplifier. The first pair of lines electrically connects a first pull-up sense amplifier of the first sense amplifier to a first pull-down sense amplifier of the first sense amplifier. The second pair of lines electrically connects the second pull-up sense amplifier to the second pull-down sense amplifier. Parallel running distances between lines of the first pair of lines and the second pair of lines are equalized by a wiring twist of the first pair of lines and three wiring twists of the second pair of lines.

Abstract: Provided are a memory device for detecting a weakness of an operation pattern and a method of operating the same. The method includes: storing address information and activation count information regarding N word lines from among the plurality of word lines in a register including N entries; based on activation of a first word line different from the N word lines, storing address information and activation count information regarding the first word line in an entry from which information is evicted from among the N entries; and generating first weakness information based on a number of evictions performed on the register during a first period.

Abstract: A static random-access memory is set forth comprising: a word line circuit for generating a word line signal on a word line; a plurality of six-transistor memory cells arranged between a first bitline, a second bitline and the word line for simultaneously selecting one of either all or a portion of the plurality of six-transistor memory cells for data reading or writing, and wherein each memory cell includes first and second n-channel transistors and a bitline precharge circuit for precharging the first bitline and second bitline to a voltage of Vdd/2 prior to the first and second n-channel transistors receiving the word line signal.

Abstract: Implementations described herein relate component overprovisioning in layered devices. In some implementations, a test device may include one or more components configured to perform, on a set of memory components of a memory device, a set of production tests. The one or more components may be configured to identify, based on the set of production tests, a failure of a memory component of the memory device. The one or more components may be configured to reconfigure the memory device to downsize the memory device from a first configuration associated with the set of memory components to a second configuration associated with a first subset of the set of memory components.

Abstract: Various implementations described herein are related to a device having memory architecture having multiple bitcell arrays. The device may include column multiplexer circuitry coupled to the memory architecture via multiple bitlines for read access operations. The column multiplexer circuitry may perform read access operations in the multiple bitcell arrays via the bitlines based on a sense amplifier enable signal and a read multiplexer signal. The device may include control circuitry that provides the read multiplexer signal to the column multiplexer circuitry based on a clock signal and the sense amplifier enable signal so that the column multiplexer circuitry is able to perform the read access operations.

Abstract: The disclosure provides a device for receiving a single-ended signal of an LED control card and forwarding as differential signals, including a parsing unit, a control unit, an SRAM and a differential output unit; the parsing unit is used for receiving and parsing data, latch and clock signals sent by the control card; the SRAM is used for storing display data of a parsing result; the control unit is used for processing commands of the parsing result, accessing the SRAM, modifying the display data transmitted by the parsing unit in the SRAM, and filling the SRAM for provision to a back end for output display; and the differential output unit is used for obtaining differential signals based on a processing result of the control unit.

Abstract: A non-volatile memory system includes a control circuit connected to non-volatile memory cells. The control circuit is configured to concurrently program memory cells connected to different word lines that are in different sub-blocks of different blocks in different planes of a die.

Abstract: A circuit comprises a memory array, a tracking bit line and a timing control circuit. The memory array comprises a plurality of tracking cells. The tracking bit line is coupled between a first node and the plurality of tracking cells. The timing control circuit is coupled to the first node and comprises a Schmitt trigger. The Schmitt trigger generates a negative bit line enable signal in response to that a voltage level on the first node being below a low threshold voltage value of the Schmitt trigger. The timing control circuit generates a negative bit line trigger signal according to the negative bit line enable signal for adjusting voltage levels of a plurality of bit lines of the memory array.

Abstract: Embodiments of the invention are directed to a magnetic tunnel junction (MTJ) storage element that includes a reference layer, a tunnel barrier and a free layer on an opposite side of the tunnel barrier layer from the reference layer. The reference layer has a fixed magnetization direction. The free layer includes a first region, a second region and a third region. The third region is formed from a third material that is configured to magnetically couple the first region and the second region. The first region is formed from a first material having a first predetermined magnetic moment, and the second region is formed from a second material having a second predetermined magnetic moment. The first predetermined magnetic moment is lower that the second predetermined magnetic moment.

Abstract: Methods, systems, and devices for imprint recovery for memory arrays are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.