Abstract: Embodiments include semiconductor packages and a method of forming the semiconductor packages. A semiconductor package includes a mold over and around a first die and a first via. The semiconductor package has a conductive pad of a first redistribution layer disposed on a top surface of the first die and/or a top surface of the mold. The semiconductor package includes a second die having a solder ball coupled to a die pad on a bottom surface of the second die, where the solder ball of the second die is coupled to the first redistribution layer. The first redistribution layer couples the second die to the first die, where the second die has a first edge and a second edge, and where the first edge is positioned within a footprint of the first die and the second edge is positioned outside the footprint of the first die.

Abstract: A display panel, a display device and a manufacturing method thereof, and relates to the field of display technology. The display panel includes: a first display area, provided with a plurality of pixel units; a second display area adjacent to the first display area, which is capable of transmitting light and provided with a plurality of light-emitting device units; a pixel auxiliary area external to the first display area and the second display area, which is provided with a plurality of light-emitting driving units; wherein the light-emitting driving unit is configured to drive the connected light-emitting device unit to emit light.

Abstract: A metal-insulator-metal (MIM) capacitor includes a bottom electrode cup, an insulator, and a top electrode. The bottom electrode cup includes a laterally-extending bottom electrode cup base and a bottom electrode cup sidewall extending upwardly from the laterally-extending bottom electrode cup base. The insulator includes an insulator cup formed in an opening defined by the bottom electrode cup, and an insulator flange extending laterally outwardly from the insulator cup sidewall and extending laterally over an upper surface of the bottom electrode cup sidewall. The top electrode is formed in an opening defined by the insulator cup. The top electrode is insulated from the upper surface of the bottom electrode cup sidewall by the insulator flange.

Abstract: A display apparatus includes a substrate including a main display area, a component area, and a peripheral area. The component area includes a transmission area, and the peripheral area is arranged outside the main display area. The display apparatus further includes a main thin-film transistor arranged in the main display area, a main organic light-emitting diode arranged in the main display area and connected to the main thin-film transistor, an auxiliary thin-film transistor arranged in the component area, an auxiliary organic light-emitting diode arranged in the component area and connected to the auxiliary thin-film transistor, and a lower metal layer arranged between the substrate and the auxiliary thin-film transistor in the component area and having an undercut structure.

Abstract: A display apparatus, a display substrate and a manufacturing method therefor are provided. The display substrate comprises: a driving back plate, having a first driving area and a second driving area; a first electrode pattern, comprising a plurality of transparent first electrodes and a second electrode; a light emitting layer, comprising a first light emitting portion in the first driving area and a second light emitting portion in the second driving area; a second electrode pattern, comprising a plurality of transparent third electrodes in the first driving area and a fourth electrode located in the second driving area. The first electrode, the first light emitting portion and the third electrode corresponding to the first driving area constitute a Passive matrix organic light-emitting diode structure.

Abstract: The present disclosure provides an array substrate including a driving circuit board, and a first electrode layer, an insulating layer, and an anode structure sequentially stacked thereon. The anode structure includes a reflective layer, an intermediate dielectric layer, and a transparent conductive layer sequentially provided in a direction away from the driving circuit board. The array substrate has first, second, and third pixel regions. The anode structure includes first, second, and third anode structures. The first electrode layer includes first, second and third sub-portions. The first, second and third anode structures are coupled with the first, second and third sub-portions through first, second and third via holes in the insulating layer, respectively. A surface of the insulating layer in contact with the first, second and third anode structures is flush; and a thickness of the intermediate dielectric layer in the second, first and third anode structures increases sequentially.

Abstract: An array substrate includes a display area, and the array substrate includes an anti-cracking dam, a metal lead and a first data line, wherein the anti-cracking dam is arranged on a side of the array substrate and located in the display area, and the anti-cracking dam is arranged to surround a through-hole extending through the array substrate; the metal lead is arranged to at least partially surround the anti-cracking dam; the first data line includes a first section and a second section separated from each other by the through-hole; the first section of the first data line is connected to the first end of the metal lead, and the second section of the first data line is connected to the another end of the metal lead.

Abstract: A display substrate includes sub-pixels on a base substrate and each including a sub-pixel aperture area, a reflective layer, an insulating layer, independent anode patterns, a light-emitting function layer and a cathode. An orthographic projection of the reflective layer onto the base substrate at least partially overlaps an orthographic projection of the sub-pixel aperture area onto the base substrate. Each of orthographic projections of the anode patterns onto the base substrate at least partially overlaps the orthographic projection of the sub-pixel aperture area onto the base substrate. An orthographic projection of the light-emitting function layer onto the base substrate is within the orthographic projection of the sub-pixel aperture area onto the base substrate. An orthographic projection of the cathode onto the base substrate covers the orthographic projection of the light-emitting function layer onto the base substrate.

Abstract: A method for producing a plurality of sensor devices. The method includes: furnishing a substrate having contact points in a plurality of predetermined regions for sensor chips; disposing the sensor chips in the predetermined regions on the substrate, and electrically contacting the sensor chips to the contact points; attaching a frame structure with an adhesive material on the substrate and between the sensor chips, the frame structure proceeding laterally around the sensor chips, the frame structure extending, after attachment, vertically beyond the sensor chips and forming a respective cavity for at least one of the sensor chips, and a membrane spanning at least one of the cavities for the sensor chips so as to cover it; and singulating the substrate, or the frame structure and the substrate, around the respective cavities into several sensor devices.

Abstract: The present disclosure provides a displaying backplane and a displaying device, and relates to the technical field of displaying. The displaying backplane includes: a substrate base plate; a first active layer and a second active layer that are provided on the substrate base plate, wherein the material of the first active layer and the second active layer is an oxide semiconductor, the first active layer has a first channel region and first no-channel regions, and the second active layer has a second channel region and second no-channel regions; a first grid insulating layer covering the first active layer and the second active layer; and a first grid and a second grid that are provided on the first grid insulating layer; wherein the oxygen-vacancy concentration of the first channel region is greater than the oxygen-vacancy concentrations of the first no-channel regions, the second no-channel regions and the second channel region.

Abstract: A display apparatus includes a substrate including a main display area, a component area, and a peripheral area. The component area includes a transmission area, and the peripheral area is arranged outside the main display area. The display apparatus further includes a main thin-film transistor arranged in the main display area, a main organic light-emitting diode arranged in the main display area and connected to the main thin-film transistor, an auxiliary thin-film transistor arranged in the component area, an auxiliary organic light-emitting diode arranged in the component area and connected to the auxiliary thin-film transistor, and a lower metal layer arranged between the substrate and the auxiliary thin-film transistor in the component area and having an undercut structure.

Abstract: A semiconductor device structure and a method for forming the same are provided. The semiconductor device structure includes a gate electrode layer formed over a semiconductor substrate and capped with a conductive capping layer. The semiconductor device structure also includes an insulating capping stack having a lower surface that faces and is spaced apart from an upper surface of the conductive capping layer. In addition, the semiconductor device structure includes gate spacers formed over the semiconductor substrate and covering opposing sidewalls of the gate electrode layer, the conductive capping layer, and the insulating capping stack.

Abstract: A substrate and a preparation method thereof, a display panel and a preparation method thereof, and a display device are provided. The substrate includes a display region and a peripheral region positioned in a periphery of the display region and used for sealing, the substrate includes: a base substrate; an insulating layer, arranged on a side of the base substrate and positioned in the display region and the peripheral region for sealing; and a plurality of pixel units, positioned on the insulating layer corresponding to the display region, and in the peripheral region, at least one groove is disposed on a side of the insulating layer which faces away from the base substrate, a side of the groove which is away from the base substrate is open, and a depth direction of the groove is perpendicular to the base substrate.

Abstract: An organic light emitting display device includes a first display area having a plurality of sub-pixel areas therein and a second display area having a plurality of sub-pixel areas and a plurality of transmissive areas therein. The organic light emitting display device includes a plastic substrate including a first portion corresponding to the first display area and a second portion corresponding to the second display area; a plurality of thin film transistors on the plastic substrate to correspond to the plurality of sub-pixel areas; and a plurality of organic light emitting elements on the plurality of thin film transistors to correspond to the plurality of sub-pixel areas, wherein the second portion includes polyimide and a ligand compound, and the first portion includes polyimide with the ligand compound absent therein.

Abstract: A method for forming a memory device includes: providing a substrate including at least word line structures and active regions, and a bottom dielectric layer and bit line contact layers that are on a top surface of the substrate; part of the bit line contact layers are etched to form bit line contact layers at different heights; conducting layers are formed, top surfaces of the conducting layers being at different heights in a direction perpendicular to an extension direction of the word line structure, and the top surfaces of the conducting layers being at different heights in the extension direction of the word line structure; top dielectric layers are formed; and etching is performed to form separate bit line structures.

Abstract: Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. The structure comprises a semiconductor layer, a first raised source/drain region on the semiconductor layer, a second raised source/drain region on the semiconductor layer, a gate electrode laterally between the first raised source/drain region and the second raised source/drain region, a first airgap laterally between the first raised source/drain region and the gate electrode, and a second airgap laterally between the second raised source/drain region and the gate electrode. The gate electrode includes a first section and a second section between the first section and the semiconductor layer, the first section of the gate electrode has a first width, the second section of the gate electrode has a second width, and the first width is greater than the second width.

Abstract: Discussed is an organic light emitting display device including an anode, a first emission part on the anode, and including a first hole transfer layer, a first emission layer, and a first electron transfer layer, a second emission part on the first emission part, and including a second hole transfer layer, a second emission layer, and a second electron transfer layer, and a cathode on the second emission part. At least one among the first emission part and the second emission part can include an emission control layer having an absolute value of a HOMO energy level which is larger than an absolute value of a HOMO energy level of the first hole transfer layer or the second hole transfer layer. A hole mobility of the emission control layer is 1.0×10?1 cm2/Vs to 1.0×10?2 cm2/Vs lower than a hole mobility of the first hole transfer layer or the second hole transfer layer.

Abstract: An organic light emitting display device includes a substrate, an insulation layer structure, a light emitting layer, and an optical module. The substrate has an opening region, a peripheral region surrounding the opening region, and a display region surrounding the peripheral region. An opening is defined through the substrate in the opening region. The insulation layer structure is disposed in the display region and the peripheral region on the substrate. The light emitting layer is disposed on the insulation layer structure, and extends in a first direction from the display region into the opening region. A first opening is defined through the light emitting layer in the peripheral region. The optical module is disposed in the opening of the substrate.

Abstract: A display substrate, a display device, a high-precision metal mask are provided. The display substrate includes first, second, third sub-pixels. In first direction, first and third sub-pixels are alternated to form first sub-pixel rows, second sub-pixels form second sub-pixel rows. In second direction, first and second sub-pixel rows are alternated, first direction is approximately perpendicular to second direction. Two first and two third sub-pixels in two adjacent rows and two adjacent columns form a 2*2 array, in the array, two first sub-pixels are in different rows and different columns, two third sub-pixels are in different rows and different columns, at least one of two first and two third sub-pixels is a pattern where corner is cut off, connection lines of centers of two first and two third sub-pixels form non-square virtual quadrilateral, and second sub-pixel is within virtual quadrilateral. The display effect can be improved.

Abstract: A display device includes a display panel, a support film, and a polymer layer. The display panel includes a display area comprising a first area that is bendable, and a non-display area adjacent to the display area. The support film is coupled to a bottom surface of the display panel. The support film includes a first groove overlapping with the first area. The polymer layer is disposed in the first groove. The polymer layer includes a material with higher flexibility than the support film. Angles formed by the top surface of the support film and inner sides of the support film defining the first groove are acute angles.