Abstract: An organic interposer includes interconnect-level dielectric material layers embedding redistribution interconnect structures, at least one dielectric capping layer overlying a topmost interconnect-level dielectric material layer, a bonding-level dielectric layer overlying the at least one dielectric capping layer, and a dual-layer inductor structure, which may include a lower conductive coil embedded within the topmost interconnect-level dielectric material layer, a conductive via structure vertically extending through the at least one dielectric capping layer, and an upper conductive coil embedded within the bonding-level dielectric layer and comprising copper.

Abstract: A wet alignment method for a micro-semiconductor chip and a display transfer structure are provided. The wet alignment method for a micro-semiconductor chip includes: supplying a liquid to a transfer substrate including a plurality of grooves; supplying the micro-semiconductor chip onto the transfer substrate; scanning the transfer substrate by using an absorber capable of absorbing the liquid. According to the wet alignment method, the micro-semiconductor chip may be transferred onto a large area.

Abstract: A wafer manufacturing method includes a wafer preparing step of preparing a wafer including a semiconductor device formed in each of a plurality of regions demarcated by a plurality of streets intersecting each other, a support substrate fixing step of fixing the wafer to a support substrate, a removing step of removing, from the wafer, a defective device region including a semiconductor device determined to be a defective product among a plurality of the semiconductor devices formed in the wafer, and a fitting step of fitting, into a removed region formed by removing the defective device region from the wafer, a device chip including a semiconductor device as a non-defective product having same functions as those of the semiconductor device determined to be a defective product and having a size capable of being fitted into the removed region, and fixing the device chip to the support substrate.

Abstract: A wafer manufacturing method includes a wafer preparing step of preparing a wafer including a semiconductor device formed in each of a plurality of regions demarcated by a plurality of streets intersecting each other, a removing step of removing, from the wafer, a defective device region including a semiconductor device determined to be a defective product among a plurality of the semiconductor devices formed in the wafer, and a fitting step of fitting, into a removed region formed by removing the defective device region from the wafer, a device chip including a semiconductor device as a non-defective product having same functions as those of the semiconductor device determined to be a defective product and having a size capable of being fitted into the removed region.

Abstract: A manufacturing method of a package structure is provided, which includes the following steps. A carrier having a surface is provided. A copper foil layer is laminated on the surface of the carrier. A subtractive process is performed on the copper foil layer to form a copper foil circuit layer on the carrier. The copper foil circuit layer exposes a part of the surface of the carrier. A build-up structure layer is formed on the copper foil circuit layer and the surface of the carrier. A first surface of the copper foil circuit layer is aligned with a second surface of the build-up structure layer. At least one electronic component is disposed on the build-up structure layer. A package colloid is formed to cover the electronic component and the build-up structure layer. The carrier is removed to expose the first surface of the copper foil circuit layer.

Abstract: Disclosed is a light receiving element including an on-chip lens, a wiring layer, and a semiconductor layer disposed between the on-chip lens and the wiring layer. The semiconductor layer includes a photodiode, a first transfer transistor that transfers electric charge generated in the photodiode to a first charge storage portion, a second transfer transistor that transfers electric charge generated in the photodiode to a second charge storage portion, and an interpixel separation portion that separates the semiconductor layers of adjacent pixels from each other, for at least part of the semiconductor layer in the depth direction. The wiring layer has at least one layer including a light blocking member. The light blocking member is disposed to overlap with the photodiode in a plan view.

Abstract: A structure includes a circuit substrate, a device, a metal layer, a lid and a thermal interface material layer. The device is disposed on and electrically connected to the circuit substrate. The device includes at least one semiconductor die laterally encapsulated by an insulating encapsulation. The metal layer is covering a back surface of the at least one semiconductor die and the insulating encapsulation. The lid is disposed on the circuit substrate, and the lid is adhered to the metal layer through the thermal interface material layer.

Abstract: Implementations of a method singulating a plurality of semiconductor die. Implementations may include: forming a pattern in a back metal layer coupled on a first side of a semiconductor substrate where the semiconductor substrate includes a plurality of semiconductor die. The method may include etching substantially through a thickness of the semiconductor substrate at the pattern in the back metal layer and jet ablating a layer of passivation material coupled to a second side of the semiconductor substrate to singulate the plurality of semiconductor die.

Abstract: An opto-electronic package is described. The opto-electronic package is manufactured using a fan out wafer level packaging to produce dies/frames which include connection features. Additional structures such as heat exchanged structures are joined to a connection component and affixed to packages, using the connection features, to provide structural support and heat exchange to heat generating components in the package, among other functions.

Abstract: A method for manufacturing a semiconductor package includes: (a) providing a substrate structure, wherein the substrate structure includes a chip attach area, a bottom area opposite to the chip attach area, a lower side rail surrounding the bottom area, a first lower structure and a second lower structure, wherein the first lower structure is disposed in a first lower region of the lower side rail, and a second lower occupancy ratio is greater than a first lower occupancy ratio; (b) attaching at least one semiconductor chip to the chip attach area; and (c) forming an encapsulant to cover the at least one semiconductor chip.

Abstract: A wafer manufacturing method includes a wafer preparing step of preparing a wafer including a semiconductor device formed in each of a plurality of regions demarcated by a plurality of streets intersecting each other, a removing step of removing, from the wafer, a defective device region including a semiconductor device determined to be a defective product among a plurality of the semiconductor devices formed in the wafer, a support substrate fixing step of fixing the wafer to a support substrate, and a fitting step of fitting, into a removed region formed by removing the defective device region from the wafer, a device chip including a semiconductor device as a non-defective product having same functions as those of the semiconductor device determined to be a defective product and having a size capable of being fitted into the removed region, and fixing the device chip to the support substrate.

Abstract: An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/?10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a first under-bump metallization (UBM) pattern, a first conductive via, and a first dielectric layer laterally covering the first UBM pattern and the first conductive via. Entireties of a top surface and a bottom surface of the first UBM pattern are substantially planar. The first conductive via landing on the top surface of the first UBM pattern includes a vertical sidewall and a top surface connected to the vertical sidewall, and a planarized mark is on the top surface of the first conductive via. A bottom surface of the first dielectric layer is substantially flush with the bottom surface of the first UBM, and a top surface of the first dielectric layer is substantially flush with the top surface of the first conductive via.

Abstract: Method and devices for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, are provided. The laser devices include multiple laser emitters integrated onto a substrate (in a module), which emit green or blue laser radiation.

Abstract: A method for manufacturing a semiconductor device includes a step of preparing a semiconductor wafer source which includes a first main surface on one side, a second main surface on the other side and a side wall connecting the first main surface and the second main surface, an element forming step of setting a plurality of element forming regions on the first main surface of the semiconductor wafer source, and forming a semiconductor element at each of the plurality of element forming regions, and a wafer source separating step of cutting the semiconductor wafer source from a thickness direction intermediate portion along a horizontal direction parallel to the first main surface, and separating the semiconductor wafer source into an element formation wafer and an element non-formation wafer after the element forming step.

Abstract: A packaged semiconductor device includes a substrate with first and second opposing major surfaces. A stacked semiconductor device structure is connected to the first major surface and includes a plurality of semiconductor die having terminals. Conductive interconnect structures electrically connect the terminals of the semiconductor dies together. The semiconductor dies are stacked together so that the terminals are exposed, and the stacked semiconductor device structure comprises a stepped profile. The conductive interconnect structures comprise a conformal layer that substantially follows the stepped profile.

Abstract: An integrated circuit (IC) package that is to be incorporated into a computing device may include a metallization structure with circuits and/or other elements such as capacitors or inductors thereon. Pads for input/output (I/O) (or other) purposes may also be present at different locations on the metallization structure. Exemplary aspects of the present disclosure allow mold material to be placed over the circuits and/or other elements in readily-customizable configurations so as to allow placement of the I/O pads in any desired location on the metallization structure. Specifically, before the mold material is applied to the metallization structure, a mask material such as tape may be applied to portions of the metallization structure that contain I/O pads or otherwise have reasons to not have mold material thereon. The mold material is applied, and the mask material is removed, taking unwanted mold material with the mask material.

Abstract: A gang clip includes a plurality of clips formed from a metal each having a center region oriented along a first plane and an angled clip foot having a foot height, a length and a bend angle sufficient to electrically contact a lead terminal of the leadframe to be used to form a device. Adjacent ones of the plurality of clips are joined to one another by a first tie bar also oriented along the first plane. The first tie bar extends to a saw street region located between adjacent ones of the clips. A second tie bar attached to the first tie bar is positioned in the saw street region.

Abstract: A semiconductor package includes a lower connection structure, a semiconductor chip on the lower connection structure, an upper connection structure including a first conductive pattern layer on the semiconductor chip, a first insulating layer on the first conductive pattern layer, a second conductive pattern layer on the first insulating layer, a first via penetrating the first insulating layer to extend between the first conductive pattern layer and the second conductive pattern layer, and a second insulating layer extending between a side surface of the first via and the first insulating layer, and an intermediate connection structure between the lower connection structure and the upper connection structure. A chemical composition of the first insulating layer may differ from a chemical composition of the second insulating layer.

Abstract: A semiconductor structure disposed on a temporary carrier board is provided. Multiple adhesive layers are disposed on the temporary carrier. The semiconductor structure includes an adhesive-layer structure and a micro light-emitting element. The adhesive-layer structure includes a mending adhesive layer and a buffer layer. The mending adhesive layer is disposed on the temporary carrier board. The micro light-emitting element is disposed on the mending adhesive layer. The buffer layer is disposed between the mending adhesive layer and the micro light-emitting element. A height of the mending adhesive layer is less than a height of each of the adhesive layers in a thickness direction of the temporary carrier board. A sum of the height of the mending adhesive layer and the height of the buffer layer is greater than or equal to a height of each of the adhesive layers.