Abstract: An organic light emitting diode display panel and an organic light emitting diode display device are provided. The display panel includes a first display region and a second display region disposed adjacent to the first display region. A thin film transistor layer is disposed on the first substrate layer. A display function of the second display region is controlled by the thin film transistor of the first display region. Thus, the second display region is ensured to normally display images, a layered structure of the second display region is simplified, and a light transmittance of the second display region is improved. The functional requirements of front-facing photosensitive elements, such as cameras, can be met, so that it is conducive to achieve full-screen display.

Abstract: A display device is provided. The display device includes: a substrate, a first display area in which a plurality of main sub-pixels are arranged on the substrate, and a second display area in which a basic unit is arranged, the basic unit including an auxiliary light-emitting area, in which a plurality of auxiliary sub-pixels are arranged on the substrate, and a transmission portion, wherein each of the plurality of auxiliary sub-pixels includes a pixel electrode on the substrate, an intermediate layer on the pixel electrode, and an opposite electrode on the intermediate layer, wherein intermediate layers of auxiliary sub-pixels for emitting light of a same color from among the plurality of auxiliary sub-pixels are connected to each other.

Abstract: A method for forming a foreign oxide or foreign nitride layer (6) on a substrate (1) of a semiconductor comprises providing a semiconductor substrate (1) having an oxidized or nitridized surface layer (3), supplying a foreign element (5) on the oxidized or nitridized surface layer; and keeping the oxidized or nitridized surface layer (3) at an elevated temperature so as to oxidize or nitridize at least partially the foreign element by the oxygen or nitrogen, respectively, initially present in the oxidized or nitridized surface layer (3).

Abstract: Display panel and display device are provided. The display panel includes a display region and a frame region surrounding the display region. In the frame region, the display panel includes a base substrate, a planarization layer, an anode layer and a pixel defining layer. The planarization layer includes a first region and a second region. The anode layer includes first hollowed regions and second hollowed regions. The first hollowed regions at least partially overlap the first region, and the second hollowed regions at least partially overlap the second region. The pixel defining layer includes first covering parts and second covering parts. The first covering parts cover the first hollowed regions and extend to cover edges of the anode layer. The second covering parts cover the second hollowed regions and extend to cover edges of the anode layer.

Abstract: A light emitting device including a first light emitting part, a second light emitting part, and a third light emitting part each including an n-type semiconductor layer, a p-type semiconductor layer, and an active layer therebetween, a first contact member electrically contacting a first surface of the n-type semiconductor layer of the second light emitting part; and a second contact member electrically contacting the n-type semiconductor layer of the third light emitting part, in which the first contact member extends to the first light emitting part to electrically contact the n-type semiconductor layer of the first light emitting part, the first contact member and the second contact member overlap one another, and the second contact member has a width that gradually decreases in a downward direction.

Abstract: A highly reliable light-emitting device is provided. Damage to an element due to externally applied physical power is suppressed. Alternatively, in a process of pressure-bonding of an FPC, damage to a resin and a wiring which are in contact with a flexible substrate due to heat is suppressed. A neutral plane at which stress-strain is not generated when a flexible light-emitting device including an organic EL element is deformed, is positioned in the vicinity of a transistor and the organic EL element. Alternatively, the hardness of the outermost surface of a light-emitting device is high. Alternatively, a substrate having a coefficient of thermal expansion of 10 ppm/K or lower is used as a substrate that overlaps with a terminal portion connected to an FPC.

Abstract: A display device is provided that includes a substrate, a first conductive layer disposed on the substrate, a first insulating layer disposed on the first conductive layer, a second insulating layer disposed on the first insulating layer, the second insulating layer including a contact hole exposing the first conductive layer, a second conductive layer disposed on the first insulating layer and electrically connected to the first conductive layer through the contact hole, a second insulating layer disposed on the first insulating layer, a first electrode disposed on the second insulating layer and the second conductive layer, the first electrode being electrically connected to the second conductive layer, a light emitting layer disposed on the first electrode, and a second electrode disposed on the light emitting layer.

Abstract: A method for forming a foreign oxide or foreign nitride layer (6) on a substrate (1) of a semiconductor comprises providing a semiconductor substrate (1) having an oxidized or nitridized surface layer (3), supplying a foreign element (5) on the oxidized or nitridized surface layer; and keeping the oxidized or nitridized surface layer (3) at an elevated temperature so as to oxidize or nitridize at least partially the foreign element by the oxygen or nitrogen, respectively, initially present in the oxidized or nitridized surface layer (3).

Abstract: A display device includes a substrate, a display unit disposed over the substrate, and an encapsulation layer sealing the display unit. The display unit includes a thin film transistor, a display element electrically connected to the thin film transistor, a protection layer, and a planarization layer. The protection layer and the planarization layer are disposed between the thin film transistor and the display element. The display unit includes a display area and a non-display area outside the display area. The non-display area includes a voltage line. The planarization layer includes a dividing region dividing the planarization layer into a center portion and an outer portion. The dividing region surrounds the display area. The voltage line is partially disposed in the dividing region. The protection layer at least covers the sides of the voltage line disposed in the dividing region.

Abstract: A gate-all-around nanowire device and a method for forming the gate-all-around nanowire device. A first fin and a dielectric layer on the first fin are formed on a substrate. The first fin includes the at least one first epitaxial layer and the at least one second epitaxial layer that are alternately stacked. The dielectric layer exposes a channel region of the first fin. A doping concentration at a lateral surface of the channel region and a doping concentration at a central region of the channel region are different from each other in the at least one second epitaxial layer. After the at least one first epitaxial layer is removed from the channel region, the at least one second epitaxial layer in the channel region serves as at least one nanowire. A gate surrounding the at least one nanowire is formed.

Abstract: A display device includes a display panel from which light is transmitted; and a window through which the light from the display panel is transmitted to outside the display device. The window includes a transmission area through which the light is transmitted, a light shielding area which is adjacent to the transmission area and blocks the light, and a resin layer at which the window is attachable to the display panel, the resin layer defining a light shielding pattern which corresponds to the light shielding area and blocks the light.

Abstract: A display device includes a substrate provided with a plurality of pixels, a circuit element layer provided on the substrate and provided with an auxiliary electrode, an insulating layer provided on the circuit element layer and provided with a plurality of connection electrodes spaced apart from one another and a first trench, a fence structure provided on the plurality of connection electrodes, an organic light emitting layer provided on the fence structure, and a second electrode arranged on the organic light emitting layer, wherein the plurality of connection electrodes are electrically connected with the auxiliary electrode, at least one of the plurality of connection electrodes is exposed from the first trench, and the second electrode is in contact with a connection electrode exposed from the first trench. Therefore, a luminance difference between an outer portion of a panel and a center portion of the panel may be reduced.

Abstract: A transparent display device includes a display panel including first areas which are emission areas and second areas which are transmission areas, the display panel includes a first substrate and a second substrate facing each other, the first substrate includes an insulating layer having an open hole that is prepared by removing the insulating layer by at least a partial thickness in the second area, and the second substrate includes a transparent spacer located in the second area and pulled into the open hole.

Abstract: A display panel and a manufacturing method of a display panel are provided. A display panel includes: a base substrate in which a pixel area and a peripheral area adjacent to the pixel area are defined; a light emitting element located on the base substrate to overlap the pixel area, and configured to generate first light; a light control layer on the light emitting element; a color filter layer on the light control layer; and a capping layer contacting at least the light control layer and including silicon oxynitride (SiON), and the capping layer contains about 34 at % to about 41 at % of oxygen, and about 18 at % to about 25 at % of nitrogen. Luminous efficiency of the display panel may be increased while maintaining durability of the display panel.

Abstract: The present disclosure relates to a light emitting diode display device, and a light emitting diode display device according to an exemplary embodiment includes: a substrate; a semiconductor disposed on the substrate; a gate electrode disposed on the semiconductor; an interlayer insulating layer disposed on the substrate and the gate electrode; source and drain electrodes disposed on the interlayer insulating layer and connected to the semiconductor; a first slit provided in the interlayer insulating layer; and a first wire disposed on the interlayer insulating layer and configured to overlap the first slit.

Abstract: A display apparatus includes a substrate including a display area and a sensor area, the sensor area including an auxiliary display area and a transmitting area, first display elements arranged over the display area, second display elements arranged over the auxiliary display area, transmitting units arranged in the transmitting area and configured to transmit at least a portion of light incident on the transmitting units, and an optical layer including a mesh pattern covering at least the second display elements.

Abstract: A display substrate includes a base and blue light-emitting units disposed on the base. A blue light-emitting unit includes a first electrode, a first light-emitting layer and a second electrode that are sequentially disposed on the base. Of the first electrode and the second electrode, one electrode is configured to reflect light, and another electrode is configured to transmit light. The first light-emitting layer is configured to emit light having a spectrum whose full width at half maximum is less than or equal to 16 nm.

Abstract: A display apparatus may include: a base substrate including at least one bending region and a non-bending region adjacent to the bending region and having a flexible property; a circuit device layer on the base substrate, the circuit device layer including a thin film transistor; a display device layer on the circuit device layer, the display device layer including an organic light emitting diode connected to the thin film transistor; an encapsulation layer covering the display device layer and including a first inorganic layer, an organic layer, and a second inorganic layer, which are sequentially stacked; and a groove overlapped with the bending region, the groove penetrating the display device layer and the circuit device layer, and at least one of the first inorganic layer and the second inorganic layer covers the groove.

Abstract: A display module includes a panel part, a first supporting member, a second supporting member, a shielding member, and a stretchable member. The panel part includes a pixel array to display an image. The first supporting member is disposed under the panel part. The second supporting member is disposed under the panel part and adjacent to the first supporting member in a first direction. The shielding member covers a boundary area between the first supporting member and the second supporting member. The stretchable member is extended to the shielding member and disposed under the first supporting member or the second supporting member. An elongation of the stretchable member is greater than an elongation of the shielding member.

Abstract: A display device including a substrate in which pixel groups each composed of two or more pixels adjacent in a column direction are arranged; a circuit element layer in which driving transistors driving the pixels are arranged; electrodes placed on the circuit element layer, and electrically connected to the driving transistors through via holes, respectively; a bank surrounding each of the pixel groups, and placed to cover at least a part of an edge of the electrodes; and emission layers formed within areas surrounded by the bank, wherein the pixel groups are arranged in a zigzag shape with respect to a row direction.