Patents Examined by Xinning Niu
  • Patent number: 10050403
    Abstract: An excimer laser chamber device may include: a the laser chamber; a first electrode provided in the laser chamber; a second electrode provided in the laser chamber to face the first electrode; an electrode holder provided in the laser chamber to be connected to a high voltage; at least one connecting terminal including a first anchored portion anchored to the first electrode and a second anchored portion anchored to the electrode holder, the at least one connecting terminal being configured to electrically connect the first electrode and the electrode holder; a guide member held by the electrode holder, the guide member being configured to position the first electrode in a direction substantially perpendicular to both a direction of electric discharge between the first electrode and the second electrode and a longitudinal direction of the first electrode; and an electrode-gap-varying unit configured to move the first electrode in a direction substantially parallel to the direction of electric discharge.
    Type: Grant
    Filed: August 18, 2017
    Date of Patent: August 14, 2018
    Assignee: Gigaphoton Inc.
    Inventors: Hisakazu Katsuumi, Kazuya Takezawa, Kouji Kakizaki, Hiroaki Tsushima, Takeshi Asayama
  • Patent number: 10044165
    Abstract: Methods and systems for controlling start-up and stabilization of mode-locked lasers are disclosed. A laser stabilization method may include: receiving a laser beam generated by a mode-locked laser; generating a current based on the laser beam received, wherein the generation of the current generates a radio frequency (RF) waveform; amplifying the RF waveform to a level suitable to be processed by a mixer communicatively coupled with the mode-locked laser; and adjusting a phase of the amplified RF waveform to compensate for effects of environmental changes on the laser beam generated by the mode-locked laser.
    Type: Grant
    Filed: April 13, 2017
    Date of Patent: August 7, 2018
    Assignee: Rockwell Collins, Inc.
    Inventor: Thomas J. Cullen
  • Patent number: 10033157
    Abstract: A surface-emitting semiconductor laser includes a first semiconductor multilayer film reflector, an active region, a second semiconductor multilayer film reflector, and a current confinement layer including an oxidized region formed by selective oxidation. The current confinement layer includes a first semiconductor layer having a relatively high Al content, a second semiconductor layer that is adjacent to the first semiconductor layer on an active-region side of the first semiconductor layer and has a lower Al content than the first semiconductor layer, and a composition-gradient layer adjacent to the first semiconductor layer on a side of the first semiconductor layer which is opposite to the active-region side. A portion of the composition-gradient layer which faces the first semiconductor layer has a lower Al content than the first semiconductor layer.
    Type: Grant
    Filed: July 28, 2015
    Date of Patent: July 24, 2018
    Assignee: FUJI XEROX CO., LTD.
    Inventors: Kazutaka Takeda, Junichiro Hayakawa, Akemi Murakami, Naoki Jogan, Takashi Kondo, Jun Sakurai
  • Patent number: 10032662
    Abstract: Packaged semiconductor devices and methods of packaging thereof are disclosed. In some embodiments, a packaged semiconductor device includes a first device and a second device coupled to the first device. The second device includes an integrated circuit die covered by a molding compound. An over-mold structure is disposed over the second device.
    Type: Grant
    Filed: October 8, 2014
    Date of Patent: July 24, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Shu-Hang Liao, Ying-Ching Shih, Szu-Wei Lu, Jing-Cheng Lin
  • Patent number: 10026644
    Abstract: Provided is a fabrication method of a non-volatile memory device having a zigzag body wiring. First word lines and second word lines are formed on a substrate, wherein the first word lines and the second word lines are arranged periodically and extend in a first direction. Bit lines are formed over the first and second word lines, wherein a first distance from the first word lines to the substrate is smaller than a second distance from the second word lines to the substrate.
    Type: Grant
    Filed: May 6, 2015
    Date of Patent: July 17, 2018
    Assignee: PHISON ELECTRONICS CORP.
    Inventor: Hiroshi Watanabe
  • Patent number: 10027082
    Abstract: A fiber laser oscillator includes a housing that accommodates an optical unit such that the optical unit is able to be drawn out of the housing; and a clean bench that is detachable to a side of the optical unit, and defines a closed space which is isolated from outside, in which a communication opening that is in communication with an internal space of the housing is defined in the clean bench.
    Type: Grant
    Filed: April 11, 2017
    Date of Patent: July 17, 2018
    Assignee: FANUC CORPORATION
    Inventor: Minoru Andou
  • Patent number: 10014655
    Abstract: An optical module includes a light forming part and a protective member that has an emitting window transmitting light from the light forming part and is disposed to surround the light forming part. The light forming part 20 includes a base member, a semiconductor light-emitting element mounted on the base member, a lens mounted on the base member, and the first supporting member that is disposed between the base member and the lens and supports the lens with respect to the base member. The first supporting member has constriction, which has a smaller cross-sectional area than a region in which the first supporting member is in contact with the lens and a region in which the first supporting member is in contact with the base member in a cross section perpendicular to a thickness direction of the first supporting member.
    Type: Grant
    Filed: June 30, 2017
    Date of Patent: July 3, 2018
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Yuki Nakamura, Hiromi Nakanishi
  • Patent number: 9991677
    Abstract: Quantum cascade (QC) lasers and methods of fabricating such QC lasers are provided. The QC lasers incorporate a DFB grating without requiring the use of relying on epitaxial regrowth processes. The DFB gratings are formed as sidewall gratings along the lateral length of the QC active region, or the DFB gratings are formed atop the lateral length of the QC active region, and wherein the top DFB grating is planarized with a polymeric material.
    Type: Grant
    Filed: May 13, 2015
    Date of Patent: June 5, 2018
    Assignee: California Institute of Technology
    Inventors: Ryan M. Briggs, Clifford F. Frez, Siamak Forouhar
  • Patent number: 9991667
    Abstract: A method for generating femtosecond vortex beams with high spatial intensity contrast, where a noncollinearly pumped HG beam femtosecond laser generates femtosecond HG beam and a cylindrical lens mode converter converts the femtosecond HG beam to femtosecond LG vortex beam. The HG beam femtosecond laser comprises a pump source, a gain medium, a saturable absorption mirror as mode-locker, and an output coupler with a noncollinear angle between the laser beam and the pump beam in the gain medium, which enables the laser to generate pure, order-tunable femtosecond HG beams. Femtosecond vortex beams obtained after the cylindrical lens converter have high-intensity-contrast, and are topological charge-tunable.
    Type: Grant
    Filed: April 6, 2017
    Date of Patent: June 5, 2018
    Assignee: Shanghai Jiao Tong University
    Inventors: Guoqiang Xie, Liejia Qian, Zhen Qiao, Lingchen Kong, Zhipeng Qin, Peng Yuan
  • Patent number: 9984939
    Abstract: A method for manufacturing a semiconductor device includes providing a substrate, performing an N-type dopant implantation into a first region of the substrate to form an N-well, removing a portion of the substrate to form a first set of fins on the N-well and a second set of fins on a second region of the substrate adjacent the N-well, filling gap spaces between the fins to form an isolation region, and performing a P-type dopant implantation into the second region to form a P-well adjacent the N-well. The N-well and the P-well are formed separately at different times. The loss of the P-type dopant ions due to the diffusion of P-type dopant ions in the P-well into the isolation region can be eliminated, and the damage to the fins caused by N-type dopant ions can be avoided.
    Type: Grant
    Filed: September 30, 2016
    Date of Patent: May 29, 2018
    Assignees: Semiconductor Manufacturing International (Beijing) Corporation, Semiconductor Manufacturing International (Shanghai) Corporation
    Inventor: Fei Zhou
  • Patent number: 9985074
    Abstract: A light-emitting device is introduced herein. The light-emitting device comprises a first light-generating active layer and a second light-generating active layer stacked in a vertical direction on a substrate wherein the first light-generating active layer and the second light-generating active layer emit light having substantially the same wavelength, and wherein the substrate, the first light-generating active layer, and the second light-generating active layer are formed together in a chip.
    Type: Grant
    Filed: November 7, 2016
    Date of Patent: May 29, 2018
    Assignee: EPISTAR CORPORATION
    Inventors: Wen-Yung Yeh, Yu-Chen Yu, Hsi-Hsuan Yen, Jui-Ying Lin
  • Patent number: 9985408
    Abstract: A gas laser excitation system with an integrated impedance matching circuit, comprises a gas laser electrode, a high-frequency connection line connectable to the gas laser electrode and configured for transmission of high-frequency power to the gas laser electrode, and a shield configured to shield the high-frequency power to be transmitted. The shield is arranged between the high-frequency connection line and the gas laser electrode. The high-frequency connection line interacts with the gas laser electrode and/or the shield in such a way that the resulting impedance changes at least across a section of the high-frequency connection line.
    Type: Grant
    Filed: January 25, 2017
    Date of Patent: May 29, 2018
    Assignee: TRUMPF Laser—und Systemtechnik GmbH
    Inventors: Markus Schwandt, Gerold Mahr, Stefan Knupfer, Sergej Friesen
  • Patent number: 9985409
    Abstract: A calculation part calculates a maximum temperature reached which is reached by the coolant or component of each part, in the case of machining in accordance with laser machining conditions that were inputted or set, based on the cooling capacity of a chiller, tank volume of the chiller, heat generation amount from the laser oscillator, heat capacity of a cooled part of the laser device, etc. which are recorded in a recording part, and the temperature of each part measured by temperature detection parts, etc. In the case that the maximum temperature reached would exceed the allowed maximum temperature, a warning is made prior to starting laser machining.
    Type: Grant
    Filed: April 10, 2017
    Date of Patent: May 29, 2018
    Assignee: FANUC CORPORATION
    Inventors: Hiroshi Takigawa, Yuji Nishikawa
  • Patent number: 9979159
    Abstract: In a semiconductor laser, a block layer is provided on both sides of a mesa-type semiconductor part having an n-type cladding layer, an active layer, and a p-type cladding layer. The block layer has: a p-type block layer formed on the side surface of the mesa-type semiconductor part and over a p-type semiconductor substrate; a high-resistance layer formed over the p-type block layer; and an n-type block layer formed over the high-resistance layer, which has a higher resistance than that of the p-type block layer. By providing the high-resistance layer between the p-type block layer and the n-type block layer, the thickness of the p-type block layer can be controlled and a leakage current (flow of a hole) can be reduced. Further, the distance between the n-type cladding layer and the n-type block layer can be secured, and hence a leakage current (flow of an electron) can be prevented.
    Type: Grant
    Filed: October 2, 2015
    Date of Patent: May 22, 2018
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventor: Tetsuro Okuda
  • Patent number: 9979156
    Abstract: A semiconductor laser device that enables flip-chip assembly by having an embedding section around a mesa section, and that has an improved emission lifetime, as well as a photoelectric converter and an optical information processing unit each having such a semiconductor laser device. The semiconductor laser device includes: a mesa section including an active layer, and having a first electrode on a top surface; an embedding section covering the mesa section, and having a first connection aperture that reaches the first electrode; and a first wiring provided on the embedding section overlaying the first connection aperture, the first wiring being electrically connected to the first electrode through the first connection aperture.
    Type: Grant
    Filed: January 3, 2017
    Date of Patent: May 22, 2018
    Assignee: SONY CORPORATION
    Inventor: Hiizu Ootorii
  • Patent number: 9972966
    Abstract: The disclosure herein generally relates to a system (10) for converting an input light (12) into an output light beam (14) that has a spatial beam quality that is greater than that of the input light (12). The system (10) comprises an optical resonator having disposed therein a Raman crystal (20). The Raman crystal (20) is for receiving the input light (12) and the optical resonator is configured to resonate a Stokes light beam (22) generated from the input light (12) by at least one nonlinear interaction within the Raman crystal (20). The at least one nonlinear interaction comprises at least one Raman interaction. The Stokes light beam (22) has a spatial beam quality that is greater than that of the input light (12). The system (10) comprises a light extractor (18) arranged to generate the output light beam (14) by extracting at least some of the Stokes light beam (22) from the optical resonator.
    Type: Grant
    Filed: January 7, 2015
    Date of Patent: May 15, 2018
    Assignee: Macquarie University
    Inventors: Richard Paul Mildren, Aaron McKay
  • Patent number: 9966723
    Abstract: A laser including a solid state laser gain medium having a D-shaped cross section and an unstable resonator laser cavity including the solid state laser gain medium configured with a geometric magnification in a range of 1 to 5 under the intended operating conditions, including the effects of thermal lensing in the gain medium. An optical switching device in the unstable resonator laser cavity generates a pulse duration in the range of 0.05 to 100 nanoseconds. A diode-pump source is configured to inject pump light through the curved or barrel surface of the D-shaped gain medium.
    Type: Grant
    Filed: November 20, 2015
    Date of Patent: May 8, 2018
    Assignee: JGM Associates, Inc.
    Inventor: Jeffrey G. Manni
  • Patent number: 9966364
    Abstract: A semiconductor package comprising: a substrate including an external connection terminal and a cavity; a first semiconductor chip disposed in the cavity, the first semiconductor chip including a first pad and a second pad different from the first pad, the first pad and the second pad being disposed on a first surface of the first semiconductor chip; a metal line disposed on the substrate and the first semiconductor chip and electrically connecting the first pad of the first semiconductor chip with the external connection terminal of the substrate; a second semiconductor chip disposed on the first semiconductor chip, the second semiconductor chip including a third pad disposed on a second surface of the second semiconductor chip facing the first semiconductor chip; and a connection terminal electrically connecting the second pad of the first semiconductor chip with the third pad of the second semiconductor chip, the connection terminal being not electrically connected to the metal line.
    Type: Grant
    Filed: February 16, 2017
    Date of Patent: May 8, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Gun Ho Chang, Jong Bo Shim, Cha Je Jo
  • Patent number: 9960569
    Abstract: The invention relates to a method for stabilizing a diode laser with a semiconductor laser diode and an external resonator (ECDL), wherein the external resonator is comprised of at least one angle-dispersive, frequency-selective element and wherein the frequency of the diode laser is essentially determined by the length of the external resonator and by the position of the angle-dispersive, frequency-selective element, and wherein these two frequency-selective elements or one element thereof can be detuned by way of a correction means (10) for harmonization to each other, which is characterized in that the portion of the light reflected from the external resonator with the angle-dispersive, frequency-selective element back to the semiconductor laser diode and not optically coupled into the semiconductor laser diode (designated as “non-optically coupled light”) or part thereof, is measured and that from the relevant measuring values, after comparison with a reference value, a fault signal is generated which as
    Type: Grant
    Filed: March 17, 2015
    Date of Patent: May 1, 2018
    Assignee: TOPTICA Photonics AG
    Inventors: Christoph Raab, Andreas Able, Rainer Heidemann
  • Patent number: 9941654
    Abstract: An apparatus for generating and amplifying laser beams at approximately 1 micrometer wavelength is disclosed. The apparatus includes an ytterbium-doped gain-crystal pumped by an ytterbium fiber-laser. The fiber-laser enables a pump wavelength to be selected that minimizes heating of the gain-crystal. The apparatus can be configured for generating and amplifying ultra-fast pulses, utilizing the gain-bandwidth of ytterbium-doped gain-crystals.
    Type: Grant
    Filed: September 1, 2015
    Date of Patent: April 10, 2018
    Assignee: Coherent, Inc.
    Inventors: Andrei Starodoumov, Dmitri Simanovski