Patents Examined by Xinning Niu
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Patent number: 10050403Abstract: An excimer laser chamber device may include: a the laser chamber; a first electrode provided in the laser chamber; a second electrode provided in the laser chamber to face the first electrode; an electrode holder provided in the laser chamber to be connected to a high voltage; at least one connecting terminal including a first anchored portion anchored to the first electrode and a second anchored portion anchored to the electrode holder, the at least one connecting terminal being configured to electrically connect the first electrode and the electrode holder; a guide member held by the electrode holder, the guide member being configured to position the first electrode in a direction substantially perpendicular to both a direction of electric discharge between the first electrode and the second electrode and a longitudinal direction of the first electrode; and an electrode-gap-varying unit configured to move the first electrode in a direction substantially parallel to the direction of electric discharge.Type: GrantFiled: August 18, 2017Date of Patent: August 14, 2018Assignee: Gigaphoton Inc.Inventors: Hisakazu Katsuumi, Kazuya Takezawa, Kouji Kakizaki, Hiroaki Tsushima, Takeshi Asayama
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Patent number: 10044165Abstract: Methods and systems for controlling start-up and stabilization of mode-locked lasers are disclosed. A laser stabilization method may include: receiving a laser beam generated by a mode-locked laser; generating a current based on the laser beam received, wherein the generation of the current generates a radio frequency (RF) waveform; amplifying the RF waveform to a level suitable to be processed by a mixer communicatively coupled with the mode-locked laser; and adjusting a phase of the amplified RF waveform to compensate for effects of environmental changes on the laser beam generated by the mode-locked laser.Type: GrantFiled: April 13, 2017Date of Patent: August 7, 2018Assignee: Rockwell Collins, Inc.Inventor: Thomas J. Cullen
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Patent number: 10033157Abstract: A surface-emitting semiconductor laser includes a first semiconductor multilayer film reflector, an active region, a second semiconductor multilayer film reflector, and a current confinement layer including an oxidized region formed by selective oxidation. The current confinement layer includes a first semiconductor layer having a relatively high Al content, a second semiconductor layer that is adjacent to the first semiconductor layer on an active-region side of the first semiconductor layer and has a lower Al content than the first semiconductor layer, and a composition-gradient layer adjacent to the first semiconductor layer on a side of the first semiconductor layer which is opposite to the active-region side. A portion of the composition-gradient layer which faces the first semiconductor layer has a lower Al content than the first semiconductor layer.Type: GrantFiled: July 28, 2015Date of Patent: July 24, 2018Assignee: FUJI XEROX CO., LTD.Inventors: Kazutaka Takeda, Junichiro Hayakawa, Akemi Murakami, Naoki Jogan, Takashi Kondo, Jun Sakurai
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Patent number: 10032662Abstract: Packaged semiconductor devices and methods of packaging thereof are disclosed. In some embodiments, a packaged semiconductor device includes a first device and a second device coupled to the first device. The second device includes an integrated circuit die covered by a molding compound. An over-mold structure is disposed over the second device.Type: GrantFiled: October 8, 2014Date of Patent: July 24, 2018Assignee: Taiwan Semiconductor Manufacturing CompanyInventors: Shu-Hang Liao, Ying-Ching Shih, Szu-Wei Lu, Jing-Cheng Lin
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Patent number: 10026644Abstract: Provided is a fabrication method of a non-volatile memory device having a zigzag body wiring. First word lines and second word lines are formed on a substrate, wherein the first word lines and the second word lines are arranged periodically and extend in a first direction. Bit lines are formed over the first and second word lines, wherein a first distance from the first word lines to the substrate is smaller than a second distance from the second word lines to the substrate.Type: GrantFiled: May 6, 2015Date of Patent: July 17, 2018Assignee: PHISON ELECTRONICS CORP.Inventor: Hiroshi Watanabe
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Patent number: 10027082Abstract: A fiber laser oscillator includes a housing that accommodates an optical unit such that the optical unit is able to be drawn out of the housing; and a clean bench that is detachable to a side of the optical unit, and defines a closed space which is isolated from outside, in which a communication opening that is in communication with an internal space of the housing is defined in the clean bench.Type: GrantFiled: April 11, 2017Date of Patent: July 17, 2018Assignee: FANUC CORPORATIONInventor: Minoru Andou
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Patent number: 10014655Abstract: An optical module includes a light forming part and a protective member that has an emitting window transmitting light from the light forming part and is disposed to surround the light forming part. The light forming part 20 includes a base member, a semiconductor light-emitting element mounted on the base member, a lens mounted on the base member, and the first supporting member that is disposed between the base member and the lens and supports the lens with respect to the base member. The first supporting member has constriction, which has a smaller cross-sectional area than a region in which the first supporting member is in contact with the lens and a region in which the first supporting member is in contact with the base member in a cross section perpendicular to a thickness direction of the first supporting member.Type: GrantFiled: June 30, 2017Date of Patent: July 3, 2018Assignee: Sumitomo Electric Industries, Ltd.Inventors: Yuki Nakamura, Hiromi Nakanishi
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Patent number: 9991677Abstract: Quantum cascade (QC) lasers and methods of fabricating such QC lasers are provided. The QC lasers incorporate a DFB grating without requiring the use of relying on epitaxial regrowth processes. The DFB gratings are formed as sidewall gratings along the lateral length of the QC active region, or the DFB gratings are formed atop the lateral length of the QC active region, and wherein the top DFB grating is planarized with a polymeric material.Type: GrantFiled: May 13, 2015Date of Patent: June 5, 2018Assignee: California Institute of TechnologyInventors: Ryan M. Briggs, Clifford F. Frez, Siamak Forouhar
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Patent number: 9991667Abstract: A method for generating femtosecond vortex beams with high spatial intensity contrast, where a noncollinearly pumped HG beam femtosecond laser generates femtosecond HG beam and a cylindrical lens mode converter converts the femtosecond HG beam to femtosecond LG vortex beam. The HG beam femtosecond laser comprises a pump source, a gain medium, a saturable absorption mirror as mode-locker, and an output coupler with a noncollinear angle between the laser beam and the pump beam in the gain medium, which enables the laser to generate pure, order-tunable femtosecond HG beams. Femtosecond vortex beams obtained after the cylindrical lens converter have high-intensity-contrast, and are topological charge-tunable.Type: GrantFiled: April 6, 2017Date of Patent: June 5, 2018Assignee: Shanghai Jiao Tong UniversityInventors: Guoqiang Xie, Liejia Qian, Zhen Qiao, Lingchen Kong, Zhipeng Qin, Peng Yuan
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Patent number: 9984939Abstract: A method for manufacturing a semiconductor device includes providing a substrate, performing an N-type dopant implantation into a first region of the substrate to form an N-well, removing a portion of the substrate to form a first set of fins on the N-well and a second set of fins on a second region of the substrate adjacent the N-well, filling gap spaces between the fins to form an isolation region, and performing a P-type dopant implantation into the second region to form a P-well adjacent the N-well. The N-well and the P-well are formed separately at different times. The loss of the P-type dopant ions due to the diffusion of P-type dopant ions in the P-well into the isolation region can be eliminated, and the damage to the fins caused by N-type dopant ions can be avoided.Type: GrantFiled: September 30, 2016Date of Patent: May 29, 2018Assignees: Semiconductor Manufacturing International (Beijing) Corporation, Semiconductor Manufacturing International (Shanghai) CorporationInventor: Fei Zhou
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Patent number: 9985074Abstract: A light-emitting device is introduced herein. The light-emitting device comprises a first light-generating active layer and a second light-generating active layer stacked in a vertical direction on a substrate wherein the first light-generating active layer and the second light-generating active layer emit light having substantially the same wavelength, and wherein the substrate, the first light-generating active layer, and the second light-generating active layer are formed together in a chip.Type: GrantFiled: November 7, 2016Date of Patent: May 29, 2018Assignee: EPISTAR CORPORATIONInventors: Wen-Yung Yeh, Yu-Chen Yu, Hsi-Hsuan Yen, Jui-Ying Lin
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Patent number: 9985408Abstract: A gas laser excitation system with an integrated impedance matching circuit, comprises a gas laser electrode, a high-frequency connection line connectable to the gas laser electrode and configured for transmission of high-frequency power to the gas laser electrode, and a shield configured to shield the high-frequency power to be transmitted. The shield is arranged between the high-frequency connection line and the gas laser electrode. The high-frequency connection line interacts with the gas laser electrode and/or the shield in such a way that the resulting impedance changes at least across a section of the high-frequency connection line.Type: GrantFiled: January 25, 2017Date of Patent: May 29, 2018Assignee: TRUMPF Laser—und Systemtechnik GmbHInventors: Markus Schwandt, Gerold Mahr, Stefan Knupfer, Sergej Friesen
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Patent number: 9985409Abstract: A calculation part calculates a maximum temperature reached which is reached by the coolant or component of each part, in the case of machining in accordance with laser machining conditions that were inputted or set, based on the cooling capacity of a chiller, tank volume of the chiller, heat generation amount from the laser oscillator, heat capacity of a cooled part of the laser device, etc. which are recorded in a recording part, and the temperature of each part measured by temperature detection parts, etc. In the case that the maximum temperature reached would exceed the allowed maximum temperature, a warning is made prior to starting laser machining.Type: GrantFiled: April 10, 2017Date of Patent: May 29, 2018Assignee: FANUC CORPORATIONInventors: Hiroshi Takigawa, Yuji Nishikawa
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Patent number: 9979159Abstract: In a semiconductor laser, a block layer is provided on both sides of a mesa-type semiconductor part having an n-type cladding layer, an active layer, and a p-type cladding layer. The block layer has: a p-type block layer formed on the side surface of the mesa-type semiconductor part and over a p-type semiconductor substrate; a high-resistance layer formed over the p-type block layer; and an n-type block layer formed over the high-resistance layer, which has a higher resistance than that of the p-type block layer. By providing the high-resistance layer between the p-type block layer and the n-type block layer, the thickness of the p-type block layer can be controlled and a leakage current (flow of a hole) can be reduced. Further, the distance between the n-type cladding layer and the n-type block layer can be secured, and hence a leakage current (flow of an electron) can be prevented.Type: GrantFiled: October 2, 2015Date of Patent: May 22, 2018Assignee: RENESAS ELECTRONICS CORPORATIONInventor: Tetsuro Okuda
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Patent number: 9979156Abstract: A semiconductor laser device that enables flip-chip assembly by having an embedding section around a mesa section, and that has an improved emission lifetime, as well as a photoelectric converter and an optical information processing unit each having such a semiconductor laser device. The semiconductor laser device includes: a mesa section including an active layer, and having a first electrode on a top surface; an embedding section covering the mesa section, and having a first connection aperture that reaches the first electrode; and a first wiring provided on the embedding section overlaying the first connection aperture, the first wiring being electrically connected to the first electrode through the first connection aperture.Type: GrantFiled: January 3, 2017Date of Patent: May 22, 2018Assignee: SONY CORPORATIONInventor: Hiizu Ootorii
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Patent number: 9972966Abstract: The disclosure herein generally relates to a system (10) for converting an input light (12) into an output light beam (14) that has a spatial beam quality that is greater than that of the input light (12). The system (10) comprises an optical resonator having disposed therein a Raman crystal (20). The Raman crystal (20) is for receiving the input light (12) and the optical resonator is configured to resonate a Stokes light beam (22) generated from the input light (12) by at least one nonlinear interaction within the Raman crystal (20). The at least one nonlinear interaction comprises at least one Raman interaction. The Stokes light beam (22) has a spatial beam quality that is greater than that of the input light (12). The system (10) comprises a light extractor (18) arranged to generate the output light beam (14) by extracting at least some of the Stokes light beam (22) from the optical resonator.Type: GrantFiled: January 7, 2015Date of Patent: May 15, 2018Assignee: Macquarie UniversityInventors: Richard Paul Mildren, Aaron McKay
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Patent number: 9966723Abstract: A laser including a solid state laser gain medium having a D-shaped cross section and an unstable resonator laser cavity including the solid state laser gain medium configured with a geometric magnification in a range of 1 to 5 under the intended operating conditions, including the effects of thermal lensing in the gain medium. An optical switching device in the unstable resonator laser cavity generates a pulse duration in the range of 0.05 to 100 nanoseconds. A diode-pump source is configured to inject pump light through the curved or barrel surface of the D-shaped gain medium.Type: GrantFiled: November 20, 2015Date of Patent: May 8, 2018Assignee: JGM Associates, Inc.Inventor: Jeffrey G. Manni
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Patent number: 9966364Abstract: A semiconductor package comprising: a substrate including an external connection terminal and a cavity; a first semiconductor chip disposed in the cavity, the first semiconductor chip including a first pad and a second pad different from the first pad, the first pad and the second pad being disposed on a first surface of the first semiconductor chip; a metal line disposed on the substrate and the first semiconductor chip and electrically connecting the first pad of the first semiconductor chip with the external connection terminal of the substrate; a second semiconductor chip disposed on the first semiconductor chip, the second semiconductor chip including a third pad disposed on a second surface of the second semiconductor chip facing the first semiconductor chip; and a connection terminal electrically connecting the second pad of the first semiconductor chip with the third pad of the second semiconductor chip, the connection terminal being not electrically connected to the metal line.Type: GrantFiled: February 16, 2017Date of Patent: May 8, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Gun Ho Chang, Jong Bo Shim, Cha Je Jo
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Patent number: 9960569Abstract: The invention relates to a method for stabilizing a diode laser with a semiconductor laser diode and an external resonator (ECDL), wherein the external resonator is comprised of at least one angle-dispersive, frequency-selective element and wherein the frequency of the diode laser is essentially determined by the length of the external resonator and by the position of the angle-dispersive, frequency-selective element, and wherein these two frequency-selective elements or one element thereof can be detuned by way of a correction means (10) for harmonization to each other, which is characterized in that the portion of the light reflected from the external resonator with the angle-dispersive, frequency-selective element back to the semiconductor laser diode and not optically coupled into the semiconductor laser diode (designated as “non-optically coupled light”) or part thereof, is measured and that from the relevant measuring values, after comparison with a reference value, a fault signal is generated which asType: GrantFiled: March 17, 2015Date of Patent: May 1, 2018Assignee: TOPTICA Photonics AGInventors: Christoph Raab, Andreas Able, Rainer Heidemann
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Patent number: 9941654Abstract: An apparatus for generating and amplifying laser beams at approximately 1 micrometer wavelength is disclosed. The apparatus includes an ytterbium-doped gain-crystal pumped by an ytterbium fiber-laser. The fiber-laser enables a pump wavelength to be selected that minimizes heating of the gain-crystal. The apparatus can be configured for generating and amplifying ultra-fast pulses, utilizing the gain-bandwidth of ytterbium-doped gain-crystals.Type: GrantFiled: September 1, 2015Date of Patent: April 10, 2018Assignee: Coherent, Inc.Inventors: Andrei Starodoumov, Dmitri Simanovski