Abstract: A semiconductor device includes a first wiring substrate having a first surface and a second surface opposite to the first surface, and including a plurality of first electrode pads on the first surface, and a second wiring substrate having a third surface facing the first surface and a fourth surface opposite to the third surface, and including a plurality of second electrode pads on the third surface. A plurality of first semiconductor chips are stacked between the first surface and the third surface. A first columnar electrode extends in an oblique direction with respect to a first direction substantially perpendicular to the first surface and the third surface, and connects between the plurality of first electrode pads and the plurality of second electrode pads. A first resin layer covers the plurality of first semiconductor chips and the first columnar electrode between the first surface and the third surface.

Abstract: A semiconductor device may include a substrate, an interface insulation pattern, a gate insulation pattern, a threshold voltage controlling metal pattern and a conductive pattern. The interface insulation pattern may be formed on the substrate. The gate insulation pattern including an oxide having a dielectric constant higher than that of silicon oxide may be formed on the interface insulation pattern. The threshold voltage controlling metal pattern may be formed on the gate insulation pattern. The conductive pattern may be formed on the threshold voltage controlling metal pattern. First dopants including at least fluorine may be included within and at at least one surface of the gate insulation pattern and at an upper surface of an interface insulation pattern contacting the gate insulation pattern. The semiconductor device may have excellent electrical characteristics.

Abstract: Embodiments disclosed herein include wire bonds and tools for forming wire bonds. In an embodiment, a wire bond may comprise a first attachment ball, and a first wire having a first portion contacting the first attachment ball and a second portion. In an embodiment, the wire bond may further comprise a second attachment ball, and a second wire having a first portion contacting the second attachment ball and a second portion. In an embodiment, the second portion of the first wire is connected to the second portion of the second wire.

Abstract: An apparatus comprising: a die stack comprising at least one die pair, the at least one die pair having a first die over a second die, the first die and the second die both having a first surface and a second surface, the second surface of the first die over the first surface of the second die; and an adhesive film between the first die and the second die of the at least one die pair; wherein the adhesive film comprises an insulating layer and a conductive layer, the insulating layer adhering to the second surface of the first die and the conductive layer adhering to the first surface of the second die.

Abstract: Embodiments of a redistribution layer structure comprise a low-k dielectric material and incorporating a reinforcement structure proximate and inward of a peripheral edge thereof, the reinforcement structure comprising conductive material electrically isolated from conductive paths through the RDL structure. Semiconductor packages including an embodiment of the RDL structure and methods of fabricating such RDL structures are also disclosed.

Abstract: Stacked die semiconductor packages may include a spacer die disposed between stacked dies in the semiconductor package and the semiconductor package substrate. The spacer die translates thermally induced stresses on the solder connections between the substrate and an underlying member, such as a printed circuit board, from electrical structures communicably or conductively coupling the semiconductor package substrate to the underlying structure to mechanical structures that physically couple the semiconductor package to the underlying structure. The footprint area of the spacer die is greater than the sum of the footprint areas of the individual stacked dies in the semiconductor package and less than or equal to the footprint area of the semiconductor package substrate. The spacer die may have nay physical configuration, thickness, shape, or geometry. The spacer die may have a coefficient of thermal expansion similar to that of the lowermost semiconductor die in the die stack.

Abstract: A semiconductor package includes a package substrate, a semiconductor chip and a plurality of bonding wires. The package substrate includes a connection pad. The semiconductor chip is disposed over the package substrate and includes a chip pad, a bonding pad, and a redistribution layer. The bonding pad is closer to a periphery of the semiconductor chip than the chip pad. The redistribution layer is connected between the chip pad and the bonding pad. The bonding wires are connected in parallel between the connection pad and the bonding pad.

Abstract: Embodiments of the present disclosure provide a light emitting diode device, a display panel, a display device, and a manufacturing method.

Abstract: In one example, a semiconductor device includes a substrate with a top side, a bottom side, and a conductive structure. A first electronic component includes a first side, a second side, and first component terminals adjacent to the first side. The first component terminals face the substrate bottom side and are connected to the conductive structure. A second electronic component comprises a first side, a second side, and second component terminals adjacent to the second electronic component first side. The second electronic component second side is connected to the first electronic component second side with a coupling structure so that the first component terminals and the second component terminals face opposite directions. Interconnects are connected to the conductive structure. The second component terminals and the interconnects are configured for connecting to a next level assembly. Other examples and related methods are also disclosed herein.

Abstract: A thermal interface structure may be formed comprising a thermally conductive substrate having a first surface and an opposing second surface, a first liquid metal layer on the first surface of the thermally conductive substrate, and a second liquid metal layer on the second surface of the thermally conductive substrate. The thermal interface structure may be used in an integrated circuit assembly or package between at least one integrated circuit device and a heat dissipation device.

Abstract: A semiconductor module includes a module substrate, a semiconductor package mounted on the module substrate, a first bonding wire connecting the module substrate to the semiconductor package, and a first molding member covering the first bonding wire. The semiconductor package includes a package substrate, a semiconductor chip mounted on the package substrate, a second bonding wire connecting the package substrate to the semiconductor chip, and a second molding member covering the semiconductor chip and the second bonding wire. The first and second bonding wires are each connected to one connection pad of the package substrate.

Abstract: The present application discloses a thinning system in package featuring an encapsulation structure in which no printed circuit board exists and comprising: a plurality of dies mounted on a top face of a copper holder and electrically connected to the plurality of data pins on the copper holder; a passive element mounted on the top face and electrically connected to the dies wherein the dies are electrically connected to the ground pin of the copper holder and both the dies and the passive element are fixed on the top face of the copper holder through a layer of insulation adhesives; a molding compound encasing the dies and the passive element on the top face of the copper holder.

Abstract: A semiconductor package includes a package substrate having a first insulating layer, a wiring layer disposed on the first insulating layer, and a second insulating layer disposed on the first insulating layer and covering at least a portion of the wiring layer, a pair of support members disposed to face each other on the second insulating layer of the package substrate, and a pair of semiconductor chips disposed between the pair of support members and electrically connected to the wiring layer, wherein the second insulating layer has an opening surrounding at least a portion of each of the pair of semiconductor chips.

Abstract: The power semiconductor apparatus includes: a semiconductor device 401; a bonding layer on chip 416 disposed on an upper surface of the semiconductor device; and a metal lead 419 disposed on the upper surface of the semiconductor device and bonded to the bonding layer on chip, wherein the metal lead 420 has a three-laminated structure including: a second metal layer 420b having a CTE equal to or less than 5×10?6/° C., for example; and a first metal layer 420a and a third metal layer 420c sandwiching the second metal layer and having a CTE equal to or greater than the CTE of the second metal layer. Provided is a power semiconductor apparatus capable of improving reliability thereof by reducing a thermal stress to a bonding layer between a semiconductor power device and a metal lead positioned on an upper surface thereof, and reducing a resistance of the metal lead.

Abstract: A microelectronic package may be fabricated having a microelectronic die stack attached to a microelectronic substrate and at least one microelectronic device, which is separate from the microelectronic die stack, attached to the microelectronic substrate within the footprint of one of the microelectronic dice within the microelectronic die stack. In one embodiment, the microelectronic die stack may have a plurality of stacked microelectronic dice, wherein one microelectronic die of the plurality of microelectronic dice has a footprint greater than the other microelectronic die of the plurality of microelectronic dice, and wherein the at least one microelectronic device is attached to the one microelectronic die of the plurality of microelectronic dice having the greater footprint.

Abstract: A display apparatus includes a substrate, a display portion that includes a plurality of pixels disposed on the substrate, and an encapsulation portion that covers the display portion and includes a hybrid encapsulation layer that includes a plurality of inorganic layers and at least one organic layer that includes a plasma polymer. An end of the hybrid encapsulation layer includes a tip portion that includes an inorganic material and a multi-layered portion which extends from the tip portion toward a central portion of the substrate and in which the plurality of inorganic layers and the at least one organic layer are sequentially and alternately stacked, and a thickness of each of the inorganic layers and the organic layer decreases toward the tip portion.

Abstract: Disclosed is a semiconductor package comprising a substrate, a chip stack including semiconductor chips stacked in an ascending stepwise shape on the substrate, first power/ground wires through which the substrate is connected to a lowermost semiconductor chip of the chip stack and neighboring semiconductor chips of the chip stack are connected to each other, and a second power/ground wire that extends from a first semiconductor chip and is connected to the substrate. The first semiconductor chip is one semiconductor chip other than the lowermost semiconductor chip and an uppermost semiconductor chip of the chip stack. The chip stack includes a first stack and a second stack on the first stack. The second stack constitutes a channel separate from that of the first stack.

Abstract: The present disclosure provides a chip package structure having a heat sink and a method making the same. The method includes: bonding a chip to a top surface of a package substrate and forming a heat-conducting lead having an arc-shape and placed on the chip in a vertical direction, a first end of the heat-conducting lead is connected with a surface of the chip, and a second end is connected with a solder ball; forming a plastic package material layer that protects the chip and the heat-conducting lead; forming a heat-conducting adhesive layer on the surface of the plastic package material layer, where the heat-conducting adhesive layer is connected with the solder ball on the second end of the heat-conducting lead; and forming a heat dissipation layer on a surface of the heat-conducting adhesive layer. With the present disclosure, the heat dissipation efficiency of the chip is effectively improved.

Abstract: A semiconductor package includes a package substrate which includes a substrate base and a plurality of wiring patterns, a lower semiconductor chip, and an upper semiconductor chip. The substrate base includes a chip-accommodating cavity and the plurality of wiring patterns include a plurality of bottom wiring patterns on a bottom surface of the substrate base and a plurality of top wiring patterns on a top surface of the substrate base. The lower semiconductor chip is disposed in the chip-accommodating cavity and is connected to the plurality of bottom wiring patterns through a plurality of lower bonding wires. The upper semiconductor chip includes a first portion which is attached to the lower semiconductor chip and a second portion which overhangs the lower semiconductor chip.

Abstract: Apparatuses and methods for coupling semiconductor devices are disclosed. In a group of semiconductor devices (e.g., a stack of semiconductor devices), a signal is provided to a point of coupling at an intermediate semiconductor device of the group, and the signal is propagated away from the point of coupling over different (e.g., opposite) signal paths to other semiconductor devices of the group. Loading from the point of coupling at the intermediate semiconductor device to other semiconductor devices of a group may be more balanced than, for example, having a point of coupling at semiconductor device at an end of the group (e.g., a lowest semiconductor device of a stack, a highest semiconductor device of the stack, etc.) and providing a signal therefrom. The more balanced topology may reduce a timing difference between when signals arrive at each of the semiconductor devices.