Abstract: A method for the reprocessing of a device having internal passageways by applying a fluid at a plurality of pressures to the internal passageways of the device to permit reuse of the device in a clean environment includes applying a fluid having a single input pressure to a pressure differentiation device having first and second pressure control fittings for providing first and second differing pressure outputs in accordance with the single input pressure and transmitting the fluid at the first and second differing pressures from the pressure differentiation device to the internal passageways. The internal passageways are reprocessed with the transmitted fluid at the first and second differing pressures, whereby the internal passageways are reprocessed at differing pressures in accordance with the single input pressure.
Abstract: A semiconductor wafer cleaning apparatus includes a gas spraying unit, having a gas injection tube and a gas guard extending therearound, for spraying cleaning gas into a water layer formed on a wafer. The gas guard forms a small chamber just above the water layer, so that the partial pressure of gas injected from the gas injection tube is increased in the small chamber, whereupon the cleaning gas readily dissolves in the water layer. As a result, a cleaning solution having a high concentration of cleaning gas is produced, whereby the cleaning efficacy of the solution is high. Subsequently, a drying gas, such as isopropyl alcohol, for drying the wafer can be ejected onto the water layer using the gas spraying unit. Thus, the semiconductor wafer cleaning apparatus has a simple structure.
Abstract: A method for minimizing galvanic corrosion effects in a single-wafer cleaning system is provided. The method initiates with spraying a cleaning chemistry containing corrosion inhibitors onto a surface of a wafer. Then, the surface of the wafer is exposed to the cleaning chemistry for a period of time. Next, a concentration gradient at an interface of the cleaning chemistry and the surface of the wafer is refreshed. Then, a rinsing agent and a drying agent are applied simultaneously to remove the cleaning chemistry, wherein the drying agent dries the surface of the wafer prior to a concentration of the corrosion inhibitors being diluted to a level insufficient to provide corrosion protection.
Type:
Grant
Filed:
December 7, 2001
Date of Patent:
February 22, 2005
Assignee:
Lam Research Corporation
Inventors:
John M. Boyd, Mike Ravkin, Katrina A. Mikhaylich
Abstract: A method for the reprocessing of a device having internal passageways by applying a fluid at a plurality of pressures to the internal passageways of the device to permit reuse of the device in a clean environment includes applying a fluid having a single input pressure to a pressure differentiation device having first and second pressure control fittings for providing first and second differing pressure outputs in accordance with the single input pressure and transmitting the fluid at the first and second differing pressures from the pressure differentiation device to the internal passageways. The internal passageways are reprocessed with the transmitted fluid at the first and second differing pressures, whereby the internal passageways are reprocessed at differing pressures in accordance with the single input pressure.
Abstract: Apparatuses and methods of processing a substrate. The apparatus includes a wet-cleaning chamber, a drying chamber, and a substrate transferring chamber which transfers a substrate to and from the wet-cleaning chamber and the drying chamber. The drying chamber is one of a supercritical drying chamber or a low pressure drying chamber. The wet-cleaning chamber is one of a single-wafer cleaning chamber, a horizontal spinning chamber, a megasonic wet-cleaning chamber, or a horizontal spinning chamber having acoustic waves transmitted to the substrate.
Abstract: Aqueous cleaning agent and its use in a process for cleaning ultrafiltration membranes in ultrafiltration units of electro-dipcoating plants, which cleaning agent contains electro-dipcoating lacquer (EDL) binders overneutalized with neutralizing agent.
Abstract: A method for cleaning a pipline by providing a filter or a number of filters adapted to reside in the pig launcher of the pipeline. The filters can be used to remove debris and impurities from the fluid flowing in the pipeline during a pigging operation. Alternatively, the filters may be retained in the pig launcher for extended periods of time.
Type:
Grant
Filed:
June 11, 2002
Date of Patent:
January 11, 2005
Inventors:
James A. Howard, John R. Hampton, Greg P. Wallace
Abstract: A method of cleaning electric grills including wetting a sheet of fluid-absorbent material constructed to conform to the wave-like contours of the upper and lower heating platters of a typical electric grill, and inserting the wetted material in between the electric grill's heating platters.
Abstract: The invention encompasses methods for cleaning surfaces of wafers or other semiconductor articles. Oxidizing is performed using an oxidation solution which is wetted onto the surface. The oxidation solution can include one or more of: water, ozone, hydrogen chloride, sulfuric acid, or hydrogen peroxide. A rinsing step removes the oxidation solution and inhibits further activity. The rinsed surface is thereafter preferably subjected to a drying step. The surface is exposed to an oxide removal vapor to remove semiconductor oxide therefrom. The oxide removal vapor can include one or more of: acids, such as a hydrogen halide, for example hydrogen fluoride or hydrogen chloride; water; isopropyl alcohol; or ozone. The processes can use centrifugal processing and spraying actions.
Abstract: Process for removing deposits from water-carrying systems and devices for water supply, or from their individual parts, in which the deposits are dissolved by means of an aqueous treatment solution and removed in dissolved form from the system or the device or their individual parts, wherein the deposits are dissolved by means of an aqueous treatment solution comprised of a combination of (i) a reducing agent, in particular in the form of a slat-like, reducing sulfur-oxygen compound, nitrogen-oxygen compound or phosphorous-oxygen compound, and (ii) a complexing agent having phosphonic acid groups or phosphonate groups or a complexing agent of the hydroxy acid type at pH values in the range of approximately 4.5 to 9.5, in particular from approximately 6.0 to 8.0.
Type:
Grant
Filed:
August 6, 2001
Date of Patent:
December 7, 2004
Assignee:
R. Späne KG
Inventors:
Michael Nurnberger, Robert Nusko, Georg Maier
Abstract: A method of cleaning an air gap in a plumbing fixture by removing the cap from a counter table access and inserting a flexible wire brush into a hose connecting the counter-top access to the drain opening.
Abstract: A method for removing paint from a substrate includes the steps of providing a sponge having a first surface for contact with the substrate, providing ultrasonic transducers in contact with a second surface of the sponge opposite from the first surface, saturating the sponge with water to provide a path of water extending from the transducers to the substrate, and activating the transducers to generate (i) a low frequency acoustic field; and (ii) a high frequency acoustic field; and thereby (iii) micron-sized vapor or cavitation bubbles which impinge upon the paint on the substrate to remove the paint from the substrate.
Type:
Grant
Filed:
October 8, 2002
Date of Patent:
December 7, 2004
Assignee:
The United States of America as represented by the Secretary
of the Navy
Inventors:
Anthony A. Ruffa, Sameer I. Madanshetty
Abstract: A cleaner and method for removing excess residual cleaning fluid from an object, particularly a semiconductor wafer, before or as the wafer is removed from a cleaning chamber of a CMP cleaner, for example. Typically, a purge bar is mounted on each side of the cleaning chamber for blowing nitrogen or clean, dry air (CDA) against a corresponding surface of the wafer to remove the excess cleaning fluid from the wafer. The purge bars may be connected to a controller for a wafer transfer device which removes the wafer from the cleaning chamber, such that the purge bars are actuated as the wafer transfer device begins to remove the wafer from the chamber.
Abstract: A single wafer type wet-cleaning technique for effectively preventing chemical fluids from flowing to the back face of a wafer when the back face thereof is wet-cleaned by chemical fluids, wherein purified water is injected and supplied to the back face of the wafer while a plurality of chemical fluids is sequentially supplied vertically from above to the wafer, which is rotatably supported, so that the purified water cleans the back face of the wafer and effectively prevents the chemical fluids from flowing to the back face of the wafer.
Abstract: The invention is directed to a mehtod of cleaning an object in a controlled environment processing chamber into which solvents, water and/or gases are introduced. The process includes first applying a negative gauge pressure to the chamber to non-condensable gases and then introducing a solvent, solvent mixture, water or gas in either a liquid or vapor state to remove soluble contaminants from the surface of an object being processed in the chamber. Further steps recover residual solvent or solution from the object and chamber. A secondary cleaning step directs a vapor state fluid at high velocity at a solid surface of the object to remove insoluble material left behind after the pretreatment step. A final series of steps recovers any loose impediments or residual liquid or vapor from the chamber and returns the chamber to atmospheric pressure for removal of the cleaned object.
Abstract: A method of cleaning process residues from the surface of a substrate processing chamber component having holes. In the method, the component is at least partially immersed into a cleaning solution having hydrafluoric acid and nitric acid, and a non-reactive gas is passed through the holes to prevent the cleaning solution from back-flowing into the holes during the cleaning process. The method is particularly useful for cleaning sputtering residue deposits from an electrostatic chuck used in a sputtering process.
Abstract: A cleaning apparatus includes (1) a pressure tank with at least one cleaning tank arranged therein; (2) means for supplying the cleaning apparatus with a cleaning fluid; and (3) means inside the pressure tank for setting the at least one cleaning tank in motion, wherein by these means the at least one cleaning tank is movably arranged relative to the pressure tank in terms of at least one of rotational or translational movement.
Abstract: A method for washing eggs using a first feed conveyor for receiving eggs through a housing inlet and conveying them to a second conveyor. The second conveyor transports the eggs through an intermediate egg washing station which can include brushes and dispenses cleaning solution onto the egg surfaces. The eggs are then transferred from the second conveyor to a third conveyor for transporting through a brush and cleaning solution lower washing station for final cleaning. The eggs then exit through an outlet for sanitizing and/or drying. The three conveyors are vertically tiered and preferably the second conveyor will move in a direction immediately below and opposite relative to the first conveyor and the third conveyor will move in the direction similar to the first conveyor but below the second conveyor. A pre-washing step can be included.
Abstract: A method for utilizing a decal removal apparatus provides a low pressure steam to a surface having a decal thereon at a decal area. The applicator has a plate having a seal connected to the bottom portion of the plate defining a cavity therein. An outlet communicates steam from a conduit into the cavity when to cavity is placed against the decal area. The low pressure steam moisturizes the adhesive connecting the decal to the vehicle so that the decal may then be relatively easy removed from the vehicle mechanically or otherwise.
Abstract: A method of removing iron oxide scale from processed sheet metal, the method includes the steps of: providing a surface conditioning apparatus; and conditioning a surface of the processed sheet metal with the surface conditioning apparatus. In general, the iron oxide scale generally comprises three layers prior to surface conditioning: a wustite layer, a magnetite layer, and a hematite layer. The wustite layer is bonded to a base metal substrate of the processed sheet metal. The magnetite layer is bonded to the wustite layer, and the hematite layer is bonded to the magnetite layer. The surface conditioning apparatus has at least one surface conditioning member. The step of conditioning the surface of the processed sheet metal includes bringing the at least one surface conditioning member into engagement with the surface of the sheet metal.