Abstract: A method and a sensor for detecting or measuring at least one specific component among a plurality of components present in a gaseous or liquid mixture by a sensor having at least one capturing cell with a high-electron mobility transistor including a source and a drain with a grid inserted between the source and the drain, a voltage being applied between the source and the drain, and a current intensity in the capturing cell being recorded. The voltage between the source and the drain is controlled, which varies the intensity of the current, the voltage being controlled according to a voltage model predetermined by experience in order to provide a profile with an intensity which is characteristic of said at least one specific component.

Abstract: A wireless sensor for detection or measurement of at least one specific component present in a gaseous or liquid mixture, the gas sensor including at least one sensor cell, having a high-electron-mobility transistor having a source and a drain with a gate intercalated between source and drain. The at least one sensor cell having a high-electron-mobility transistor is associated with at least one split-ring resonator with at least one respective slit and connected between, on the one hand, the drain and on the other hand, the gate or the source of the at least one sensor cell, the sensor detecting a change in the intensity or the frequency of resonance as a function of the presence and/or of the concentration of the at least one specific component in the gaseous or liquid mixture.

Abstract: A wireless sensor for detection or measurement of at least one specific component present in a gaseous or liquid mixture, the gas sensor including at least one sensor cell, having a high-electron-mobility transistor having a source and a drain with a gate intercalated between source and drain. The at least one sensor cell having a high-electron-mobility transistor is associated with at least one split-ring resonator with at least one respective slit and connected between, on the one hand, the drain and on the other hand, the gate or the source of the at least one sensor cell, the sensor detecting a change in the intensity or the frequency of resonance as a function of the presence and/or of the concentration of the at least one specific component in the gaseous or liquid mixture.

Abstract: A method and a sensor for detecting or measuring at least one specific component among a plurality of components present in a gaseous or liquid mixture by a sensor having at least one capturing cell with a high-electron mobility transistor including a source and a drain with a grid inserted between the source and the drain, a voltage being applied between the source and the drain, and a current intensity in the capturing cell being recorded. The voltage between the source and the drain is controlled, which varies the intensity of the current, the voltage being controlled according to a voltage model predetermined by experience in order to provide a profile with an intensity which is characteristic of said at least one specific component.

Abstract: An electronic HEMT transistor structure comprises a heterojunction formed from a first layer, called a buffer layer, of a first wide bandgap semiconductor material, and a second layer of a second wide bandgap semiconductor material, with a bandgap width EG2 larger than that Eg1 of the first material, and a two-dimensional electron gas flowing in a channel confined in the first layer under the interface of the heterojunction. The first layer furthermore comprises a layer of a BGaN material under the channel, with an average boron concentration of at least 0.1%, improving the electrical performance of the transistor. Application to microwave power components.

Abstract: The present invention provides an optoelectronic device and a method of manufacture thereof. In one embodiment, the method of manufacturing the optoelectronic device may include creating a multilayered optical substrate and then forming a self aligned dual mask over the multilayered optical substrate. The method may further include etching the multilayered optical substrate through the self aligned dual mask to form a mesa structure.

Abstract: The present invention provides an optical device and a method of manufacture thereof. In one embodiment, the method of manufacturing the optical device may include isolating an end of a first layer from a cladding layer located over a mesa structure that has been formed from a substrate. The end of the first layer may be isolated from the cladding layer by encapsulating the end between second and third layers located adjacent the mesa structure.

Abstract: The invention is an optoelectronic device and method of fabrication where at least two optical devices are formed on a single semiconductor substrate, with each optical device including an active region such as a multi-quantum well region. The active devices are spatially separated and optically coupled by a passive waveguide formed over the substrate which provides butt joints with the active regions. The butt joints can be optimized independently from the active regions thus improving yield.

Abstract: The present invention provides an optoelectronic device and a method of manufacture thereof. In one embodiment, the method of manufacturing the optoelectronic device may include creating a multilayered optical substrate and then forming a self aligned dual mask over the multilayered optical substrate. The method may further include etching the multilayered optical substrate through the self aligned dual mask to form a mesa structure.

Abstract: A multi-layer dopant diffusion barrier is disclosed that effectively prevents dopant diffusion but does not contribute to parasitic pn junctions or parasitic capacitance. A multi-layer dopant diffusion barrier layer prevents dopant diffusion.

Abstract: The present invention provides an optoelectronic device and a method of manufacture thereof. In one embodiment, the method of manufacturing the optoelectronic device may include creating a multilayered optical substrate and then forming a self aligned dual mask over the multilayered optical substrate. The method may further include etching the multilayered optical substrate through the self aligned dual mask to form a mesa structure.

Abstract: A method for decreasing the diffusion of dopant atoms in the active region, as well as the interdiffusion of different types of dopant atoms among adjacent doped regions, of optoelectronic devices is disclosed. The method of the present invention employs a plurality of InAlAs and/or InGaAlAs layers to avoid the direct contact between the dopant atoms and the active region, and between the dopant atoms in adjacent blocking structures of optoelectronic devices. A semi-insulating buried ridge structure, as well as a ridge structure, in which the interdiffusion of different types of dopant atoms is suppressed are also disclosed.

Abstract: The invention is an optoelectronic device and method of fabrication where at least two optical devices are formed on a single semiconductor substrate, with each optical device including an active region such as a multi-quantum well region. The active devices are spatially separated and optically coupled by a passive waveguide formed over the substrate which provides butt joints with the active regions. The butt joints can be optimized independently from the active regions thus improving yield.

Abstract: The present invention provides methods of manufacturing and integrating optical devices. In one embodiment, a method of integrating an optical device may include forming a first device over a substrate, and forming a second device over the substrate and adjacent the first device with a deposition gas having an etchant selective to a deposited component of the deposition gas.

Abstract: The present invention provides an optoelectronic device, a method of manufacture thereof, and an optical communication system including the same. The optoelectronic device may include, in one particular embodiment, an active device located over a substrate and a passive device located proximate the active device and over the substrate. The optoelectronic device may further include a doped cladding layer located over the active and passive devices and a barrier layer located over the doped cladding layer and the passive device.

Abstract: The present invention provides an optical device and a method of manufacture thereof. In one embodiment, the method of manufacturing the optical device may include isolating an end of a first layer from a cladding layer located over a mesa structure that has been formed from a substrate. The end of the first layer may be isolated from the cladding layer by encapsulating the end between second and third layers located adjacent the mesa structure.

Abstract: The present invention provides methods of manufacturing and integrating optical devices. In one embodiment, a method of integrating an optical device may include forming a first device over a substrate, and forming a second device over the substrate and adjacent the first device with a deposition gas having an etchant selective to a deposited component of the deposition gas.

Abstract: The present invention relates to a multi-layer dopant barrier and its method of fabrication for use in semiconductor structures. In an illustrative embodiment, the multi-layer dopant barrier is disposed between a first doped layer and a second doped layer. The multi-layer dopant barrier further includes a first dopant blocking layer adjacent the first doped layer and a second dopant blocking layer adjacent the second doped layer. A technique for fabricating the multi layer dopant barrier is disclosed. A first dopant blocking layer is formed at a first temperature, and a second dopant blocking layer is formed at a second temperature over the first barrier layer.

Abstract: The present invention provides an electronic device having superior qualities. The electronic device includes an active region located over a substrate and an undoped layer located over the active region. The electronic device further includes a doped upper cladding layer located over the undoped layer, wherein a diffusion barrier region including aluminum is located between the undoped layer and the doped upper cladding layer. In an exemplary embodiment of the invention, the diffusion barrier region is a diffusion barrier layer or a number of diffusion barrier layers located between a plurality of the undoped layers.

Abstract: A method for decreasing the diffusion of dopant atoms in the active region, as well as the interdiffuision of different types of dopant atoms among adjacent doped regions, of optoelectronic devices is disclosed. The method of the present invention employs a plurality of InAlAs and/or InGaAlAs layers to avoid the direct contact between the dopant atoms and the active region, and between the dopant atoms in adjacent blocking structures of optoelectronic devices. A semi-insulating buried ridge structure, as well as a ridge structure, in which the interdiffusion of different types of dopant atoms is suppressed are also disclosed.