Patents by Inventor Abdul Aziz KHAJA

Abdul Aziz KHAJA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200365370
    Abstract: A processing system comprises a chamber body, a substrate support and a lid assembly. The substrate support is located in the chamber body and comprises a first electrode. The lid assembly is positioned over the chamber body and defines a processing volume. The lid assembly comprises a faceplate, a second electrode positioned between the faceplate and the chamber body, and an insulating member positioned between the second electrode and the processing volume. A power supply system is coupled to the first electrode and the faceplate and is configured to generate a plasma in the processing volume.
    Type: Application
    Filed: April 23, 2020
    Publication date: November 19, 2020
    Inventors: Fei WU, Abdul Aziz KHAJA, Sungwon HA, Vinay K. PRABHAKAR, Ganesh BALASUBRAMANIAN
  • Publication number: 20200365441
    Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for reducing substrate backside damage during semiconductor device processing. In one implementation, a method of chucking a substrate in a substrate process chamber includes exposing the substrate to a plasma preheat treatment prior to applying a chucking voltage to a substrate support. In one implementation, a substrate support is provided and includes a body having an electrode and thermal control device disposed therein. A plurality of substrate supporting features are formed on an upper surface of the body, each of the substrate supporting features having a substrate supporting surface and a rounded edge.
    Type: Application
    Filed: April 22, 2020
    Publication date: November 19, 2020
    Inventors: Liangfa HU, Abdul Aziz KHAJA, Sarah Michelle BOBEK, Prashant Kumar KULSHRESHTHA, Yoichi SUZUKI
  • Publication number: 20200362457
    Abstract: The present disclosure relates to systems and methods for reducing the formation of hardware residue and minimizing secondary plasma formation during substrate processing in a process chamber. The process chamber may include a gas distribution member configured to flow a first gas into a process volume and generate a plasma therefrom. A second gas is supplied into a lower region of the process volume. Further, an exhaust port is disposed in the lower region to remove excess gases or by-products from the process volume during or after processing.
    Type: Application
    Filed: April 24, 2020
    Publication date: November 19, 2020
    Inventors: Liangfa HU, Prashant Kumar KULSHRESHTHA, Anjana M. PATEL, Abdul Aziz KHAJA, Viren KALSEKAR, Vinay K. PRABHAKAR, Satya Teja Babu THOKACHICHU, Byung Seok KWON, Ratsamee LIMDULPAIBOON, Kwangduk Douglas LEE, Ganesh BALASUBRAMANIAN
  • Publication number: 20200365404
    Abstract: A method and apparatus for reducing bevel peeling during and after plasma enhanced chemical vapor deposition (PECVD) of a material layer on a substrate is disclosed. In one embodiment a method of processing a substrate includes positioning a substrate in a processing volume of a processing chamber, plasma treating the surface of the substrate with a treatment plasma formed of a treatment gas, chucking the substrate to the substrate support, and depositing a material layer onto the surface of the substrate by exposing the surface of the substrate to a deposition plasma. Here, the treatment gas is substantially free of carbon, silicon, or metal deposition precursors, and an RF power used to form the treatment plasma is less than about 1.42 Watts per cm2 of substrate surface (W/cm2). The deposition plasma is formed from one or a combination of a carbon, silicon, or metal precursors, and an RF power used to ignite and maintain the deposition plasma is more than about 2.12 W/cm2.
    Type: Application
    Filed: April 23, 2020
    Publication date: November 19, 2020
    Inventor: Abdul Aziz KHAJA
  • Patent number: 10811325
    Abstract: Implementations of the present disclosure generally relate to methods for processing substrates, and more particularly, to methods for predicting, quantifying and correcting process drift. In one implementation, the method includes performing a design of experiments (DOE) in a process chamber to obtain sensor readings and film properties at multiple locations on a substrate for every adjustable process control change associated with the process chamber, building a regression model for each location on the substrate using the sensor readings and film properties obtained from the DOE, tracking changes in sensor readings during production, identifying drifting in sensor readings that can lead to a change in film properties using the regression model, and adjusting one or more process controls to correct the drifting in sensor readings to minimize the change in film properties.
    Type: Grant
    Filed: August 25, 2017
    Date of Patent: October 20, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventor: Abdul Aziz Khaja
  • Publication number: 20200176296
    Abstract: Aspects of the present disclosure relate to one or more implementations of a substrate support for a processing chamber. In one implementation, a substrate support includes a body having a center, and a support surface on the body configured to at least partially support a substrate. The substrate support includes a first angled wall that extends upward and radially outward from the support surface, and a first upper surface disposed above the support surface. The substrate support also includes a second angled wall that extends upward and radially outward from the first upper surface, the first upper surface extending between the first angled wall and the second angled wall. The substrate support also includes a second upper surface extending from the second angled wall. The second upper surface is disposed above the first upper surface.
    Type: Application
    Filed: November 7, 2019
    Publication date: June 4, 2020
    Inventors: Abdul Aziz KHAJA, Venkata Sharat Chandra PARIMI, Sarah Michelle BOBEK, Prashant Kumar KULSHRESHTHA, Vinay K. PRABHAKAR
  • Patent number: 10663491
    Abstract: A voltage-current sensor enables more accurate measurement of the voltage, current, and phase of RF power that is delivered to high-temperature processing region. The sensor includes a planar body comprised of a non-organic, electrically insulative material, a measurement opening formed in the planar body, a voltage pickup disposed around the measurement opening, and a current pickup disposed around the measurement opening. Because of the planar configuration and material composition of the sensor, the sensor can be disposed proximate to or in contact with a high-temperature surface of a plasma processing chamber.
    Type: Grant
    Filed: February 9, 2018
    Date of Patent: May 26, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Zheng John Ye, Jay D. Pinson, II, Juan Carlos Rocha, Abdul Aziz Khaja
  • Patent number: 10636630
    Abstract: A processing chamber and a processing method for processing a substrate in the processing chamber with thermal control are described herein. The method includes heating a first substrate using a heater apparatus during a first processing operation. The heater apparatus has a first setpoint during at least a first portion of the first processing operation. The first substrate is disposed on a substrate support surface of an electrostatic chuck in a processing chamber. The method further includes determining a first parameter change corresponding to a resistivity change in the electrostatic chuck, determining a second setpoint for the heater apparatus based on the first parameter change, and controlling the heater apparatus to the second setpoint.
    Type: Grant
    Filed: July 12, 2018
    Date of Patent: April 28, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Hemant P. Mungekar, Ganesh Balasubramanian, Yoichi Suzuki, Abdul Aziz Khaja
  • Patent number: 10629427
    Abstract: Methods for processing a substrate, such as bevel etch processing, are provided. In one embodiment, a method includes placing a substrate on a cover plate inside of a processing chamber, where the substrate has a center and a bevel edge and contains a dielectric layer thereon, the processing chamber contains a mask disposed above the substrate and an edge ring disposed under the substrate, the edge ring has an annular body, and the cover plate is disposed on a support assembly. The method further includes heating the substrate with a heater attached to the support assembly, raising the edge ring to contact the mask, flowing a process gas containing an etchant along an outer surface of the mask and to the bevel edge, where the process gas is ignited to produce a plasma, and exposing an upper surface of the substrate at the bevel edge to the process gas.
    Type: Grant
    Filed: March 13, 2019
    Date of Patent: April 21, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Zonghui Su, Vinay Prabhakar, Abdul Aziz Khaja, Jeongmin Lee
  • Patent number: 10599043
    Abstract: Implementations described herein generally relate to methods for leveling a component above a substrate. In one implementation, a test substrate is placed on a substrate support inside of a processing chamber. A component, such as a mask, is located above the substrate. The component is lowered to a position so that the component and the substrate are in contact. The component is then lifted and the particle distribution on the test substrate is reviewed. Based on the particle distribution, the component may be adjusted. A new test substrate is placed on the substrate support inside of the processing chamber, and the component is lowered to a position so that the component and the new test substrate are in contact. The particle distribution on the new test substrate is reviewed. The process may be repeated until a uniform particle distribution is shown on a test substrate.
    Type: Grant
    Filed: August 11, 2017
    Date of Patent: March 24, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Hiroyuki Ogiso, Jianhua Zhou, Zonghui Su, Juan Carlos Rocha-Alvarez, Jeongmin Lee, Karthik Thimmavajjula Narasimha, Rick Gilbert, Sang Heon Park, Abdul Aziz Khaja, Vinay Prabhakar
  • Publication number: 20200058539
    Abstract: Embodiments described herein relate to coating materials with high resistivity for use in processing chambers. To counteract the high charges near the top surface of the thermal conductive support, the top surface of the thermal conductive support can be coated with a high resistivity layer. The high resistivity of the layer reduces the amount of charge at the top surface of the thermally conductive element, greatly reducing or preventing arcing incidents along with reducing electrostatic chucking degradation. The high resistivity layer can also be applied to other chamber components. Embodiments described herein also relate to methods for fabricating a chamber component for use in a processing environment. The component can be fabricated by forming a body of a chamber component, optionally ex-situ seasoning the body, installing the chamber component into a processing chamber, in-situ seasoning the chamber component, and performing a deposition process in the processing chamber.
    Type: Application
    Filed: July 23, 2019
    Publication date: February 20, 2020
    Inventors: Sudha RATHI, Dong Hyung LEE, Abdul Aziz KHAJA, Ganesh BALASUBRAMANIAN, Juan Carlos ROCHA
  • Publication number: 20190393072
    Abstract: The present disclosure generally relates to substrate supports for semiconductor processing. In one embodiment, a substrate support is provided. The substrate support includes a body comprising a substrate chucking surface, an electrode disposed within the body, a plurality of substrate supporting features formed on the substrate chucking surface, wherein the number of substrate supporting features increases radially from a center of the substrate chucking surface to an edge of the substrate chucking surface, and a seasoning layer formed on the plurality of the substrate supporting features, the seasoning layer comprising a silicon nitride.
    Type: Application
    Filed: June 11, 2019
    Publication date: December 26, 2019
    Inventors: Abdul Aziz KHAJA, Liangfa HU, Sudha S. RATHI, Ganesh BALASUBRAMANIAN
  • Publication number: 20190355608
    Abstract: A substrate support is disclosed. The substrate support has a dielectric body with a plurality of features formed thereon. A ledge surrounds the plurality of features about a periphery thereof. The features increase in number from a central region of the substrate support towards the ledge. A seasoning layer is optionally disposed on the dielectric body.
    Type: Application
    Filed: April 11, 2019
    Publication date: November 21, 2019
    Inventors: Abdul Aziz KHAJA, Jun MA, Hyung Je WOO, Fei WU, Jian LI
  • Publication number: 20190341227
    Abstract: One or more embodiments described herein generally relate to selective deposition of substrates in semiconductor processes. In these embodiments, a precursor is delivered to a process region of a process chamber. A plasma is generated by delivering RF power to an electrode within a substrate support surface of a substrate support disposed in the process region of the process chamber. In embodiments described herein, delivering the RF power at a high power range, such as greater than 4.5 kW, advantageously leads to greater plasma coupling to the electrode, resulting in selective deposition to the substrate, eliminating deposition on other process chamber areas such as the process chamber side walls. As such, less process chamber cleans are necessary, leading to less time between depositions, increasing throughput and making the process more cost-effective.
    Type: Application
    Filed: May 3, 2019
    Publication date: November 7, 2019
    Inventors: Satya THOKACHICHU, Edward P. HAMMOND, IV, Viren KALSEKAR, Zheng John YE, Sarah Michelle BOBEK, Abdul Aziz KHAJA, Vinay K. PRABHAKAR, Venkata Sharat Chandra PARIMI, Prashant Kumar KULSHRESHTHA, Kwangduk Douglas LEE
  • Publication number: 20190341232
    Abstract: Embodiments of the present disclosure generally relate to substrate supports for process chambers and RF grounding configurations for use therewith. Methods of grounding RF current are also described. A chamber body at least partially defines a process volume therein. A first electrode is disposed in the process volume. A pedestal is disposed opposite the first electrode. A second electrode is disposed in the pedestal. An RF filter is coupled to the second electrode through a conductive rod. The RF filter includes a first capacitor coupled to the conductive rod and to ground. The RF filter also includes a first inductor coupled to a feedthrough box. The feedthrough box includes a second capacitor and a second inductor coupled in series. A direct current (DC) power supply for the second electrode is coupled between the second capacitor and the second inductor.
    Type: Application
    Filed: April 23, 2019
    Publication date: November 7, 2019
    Inventors: Satya THOKACHICHU, Edward P. HAMMOND, IV, Viren KALSEKAR, Zheng John YE, Abdul Aziz KHAJA, Vinay K. PRABHAKAR
  • Publication number: 20190272991
    Abstract: Embodiments described herein generally relate to apparatuses for processing a substrate. In one or more embodiments, a heater support kit includes a heater assembly contains a heater plate having an upper surface and a lower surface, a chuck ring disposed on at least a portion of the upper surface of the heater plate, a heater arm assembly contains a heater arm and supporting the heater assembly, and a heater support plate disposed between the heater plate and the heater arm and in contact with at least a portion of the lower surface of the heater plate.
    Type: Application
    Filed: May 22, 2019
    Publication date: September 5, 2019
    Inventors: Tuan Anh NGUYEN, Jeongmin LEE, Anjana M. PATEL, Abdul Aziz KHAJA
  • Publication number: 20190252158
    Abstract: The present disclosure generally relates to processing chamber seasoning layers having a graded composition. In one example, the seasoning layer is a boron-carbon-nitride (BCN) film. The BCN film may have a greater composition of boron at the base of the film. As the BCN film is deposited, the boron concentration may approach zero, while the relative carbon and nitrogen concentration increases. The BCN film may be deposited by initially co-flowing a boron precursor, a carbon precursor, and a nitrogen precursor. After a first period of time, the flow rate of the boron precursor may be reduced. As the flow rate of boron precursor is reduced, RF power may be applied to generate a plasma during deposition of the seasoning layer.
    Type: Application
    Filed: November 13, 2018
    Publication date: August 15, 2019
    Inventors: Prashant Kumar KULSHRESHTHA, Ziqing DUAN, Abdul Aziz KHAJA, Zheng John YE, Amit Kumar BANSAL
  • Publication number: 20190214249
    Abstract: Methods for processing a substrate, such as bevel etch processing, are provided. In one embodiment, a method includes placing a substrate on a cover plate inside of a processing chamber, where the substrate has a center and a bevel edge and contains a dielectric layer thereon, the processing chamber contains a mask disposed above the substrate and an edge ring disposed under the substrate, the edge ring has an annular body, and the cover plate is disposed on a support assembly. The method further includes heating the substrate with a heater attached to the support assembly, raising the edge ring to contact the mask, flowing a process gas containing an etchant along an outer surface of the mask and to the bevel edge, where the process gas is ignited to produce a plasma, and exposing an upper surface of the substrate at the bevel edge to the process gas.
    Type: Application
    Filed: March 13, 2019
    Publication date: July 11, 2019
    Inventors: Zonghui SU, Vinay PRABHAKAR, Abdul Aziz KHAJA, Jeongmin LEE
  • Publication number: 20190203350
    Abstract: Implementations described herein protect a substrate support from corrosive cleaning gases used at high temperatures. In one embodiment, a substrate support has a shaft having an outer wall. The substrate support has a heater. The heater has a body having a top surface, a side surface and a bottom surface extending from the outer wall of the shaft. The top surface is configured to support a substrate during plasma processing of the substrate. A covering is provided for at least two of the top surface, side surface and bottom surface. The covering is selected to resist corrosion of the body at temperatures in excess of about 400 degrees Celsius. A sleeve circumscribing the shaft, the sleeve and the outer wall of the shaft forming a space therebetween, the space adapted to flow a purge gas therethrough in a direction toward the body.
    Type: Application
    Filed: March 8, 2019
    Publication date: July 4, 2019
    Inventors: Abdul Aziz KHAJA, Ren-Guan DUAN, Amit Kumar BANSAL, Jianhua ZHOU, Juan Carlos ROCHA-ALVAREZ
  • Patent number: 10276364
    Abstract: Implementations described herein generally relate to methods and apparatus for processing a substrate. More particularly, implementations described herein relate to methods and an apparatus for bevel etch processing. In one embodiment, a method of cleaning a bevel edge of a semiconductor substrate is provided. The method includes placing a substrate on a cover plate inside of a processing chamber, the substrate having a deposition layer, which includes a center, and a bevel edge. A mask is placed over the substrate. The edge ring is disposed around/under the substrate. The method also includes flowing a process gas mixture adjacent the bevel edge, and flowing a purge gas through a first hole, a second hole, and a third hole of the mask in the center of the substrate adjacent a top of the substrate.
    Type: Grant
    Filed: July 19, 2017
    Date of Patent: April 30, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Zonghui Su, Vinay Prabhakar, Abdul Aziz Khaja, Jeongmin Lee