Patents by Inventor Abdul Aziz KHAJA

Abdul Aziz KHAJA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190066984
    Abstract: A processing chamber and a processing method for processing a substrate in the processing chamber with thermal control are described herein. The method includes heating a first substrate using a heater apparatus during a first processing operation. The heater apparatus has a first setpoint during at least a first portion of the first processing operation. The first substrate is disposed on a substrate support surface of an electrostatic chuck in a processing chamber. The method further includes determining a first parameter change corresponding to a resistivity change in the electrostatic chuck, determining a second setpoint for the heater apparatus based on the first parameter change, and controlling the heater apparatus to the second setpoint.
    Type: Application
    Filed: July 12, 2018
    Publication date: February 28, 2019
    Inventors: Hemant P. MUNGEKAR, Ganesh BALASUBRAMANIAN, Yoichi SUZUKI, Abdul Aziz KHAJA
  • Patent number: 10192717
    Abstract: Embodiments of the present disclosure generally relate to methods for conditioning an interior wall surface of a remote plasma generator. In one embodiment, a method for processing a substrate is provided. The method includes exposing an interior wall surface of a remote plasma source to a conditioning gas that is in excited state to passivate the interior wall surface of the remote plasma source, wherein the remote plasma source is coupled through a conduit to a processing chamber in which a substrate is disposed, and the conditioning gas comprises an oxygen-containing gas, a nitrogen-containing gas, or a combination thereof. The method has been observed to be able to improve dissociation/recombination rate and plasma coupling efficiency in the processing chamber, and therefore provides repeatable and stable plasma source performance from wafer to wafer.
    Type: Grant
    Filed: April 23, 2015
    Date of Patent: January 29, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Abdul Aziz Khaja, Mohamad Ayoub, Jay D. Pinson, II, Juan Carlos Rocha-Alvarez
  • Patent number: 10128088
    Abstract: The present disclosure generally relates to processing chamber seasoning layers having a graded composition. In one example, the seasoning layer is a boron-carbon-nitride (BCN) film. The BCN film may have a greater composition of boron at the base of the film. As the BCN film is deposited, the boron concentration may approach zero, while the relative carbon and nitrogen concentration increases. The BCN film may be deposited by initially co-flowing a boron precursor, a carbon precursor, and a nitrogen precursor. After a first period of time, the flow rate of the boron precursor may be reduced. As the flow rate of boron precursor is reduced, RF power may be applied to generate a plasma during deposition of the seasoning layer.
    Type: Grant
    Filed: May 27, 2016
    Date of Patent: November 13, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Prashant Kumar Kulshreshtha, Ziqing Duan, Abdul Aziz Khaja, Zheng John Ye, Amit Kumar Bansal
  • Publication number: 20180323062
    Abstract: Implementations described herein generally relate to methods and apparatus for processing a substrate. More particularly, implementations described herein relate to methods and an apparatus for bevel etch processing. In one embodiment, a method of cleaning a bevel edge of a semiconductor substrate is provided. The method includes placing a substrate on a cover plate inside of a processing chamber, the substrate having a deposition layer, which includes a center, and a bevel edge. A mask is placed over the substrate. The edge ring is disposed around/under the substrate. The method also includes flowing a process gas mixture adjacent the bevel edge, and flowing a purge gas through a first hole, a second hole, and a third hole of the mask in the center of the substrate adjacent a top of the substrate.
    Type: Application
    Filed: July 19, 2017
    Publication date: November 8, 2018
    Inventors: Zonghui SU, Vinay PRABHAKAR, Abdul Aziz KHAJA, Jeongmin LEE
  • Patent number: 10109462
    Abstract: A tuning apparatus enables control of the flow of radio-frequency (RF) current in a plasma processing chamber at multiple RF frequencies. The apparatus is configured to provide a first path to ground from the chamber for RF power at a first frequency and a second path to ground from the chamber for RF power at a second frequency, where the first path to ground and the second path to ground each include a variable energy storage element. When adjusted, the variable energy storage element in the first path to ground modifies the impedance of the first path to ground, thereby changing RF current flow through the first path to ground at the first frequency. Adjusting the variable energy storage element in the second path to ground modifies the impedance of the second path to ground, thereby changing RF current flow through the second path to ground at the second frequency.
    Type: Grant
    Filed: March 13, 2018
    Date of Patent: October 23, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Edward P. Hammond, IV, Abdul Aziz Khaja, Tza-Jing Gung
  • Patent number: 10083818
    Abstract: A remote plasma source is disclosed that includes a core element and a first plasma block including one or more surfaces at least partially enclosing an annular-shaped plasma generating region that is disposed around a first portion of the core element. The remote plasma source further comprises one or more coils disposed around respective second portions of the core element. The remote plasma source further includes an RF power source configured to drive a RF power signal onto the one or more coils that is based on a determined impedance of the plasma generating region. Energy from the RF power signal is coupled with the plasma generating region via the one or more coils and the core element.
    Type: Grant
    Filed: September 23, 2015
    Date of Patent: September 25, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Abdul Aziz Khaja, Mohamad A. Ayoub, Ramesh Bokka, Jay D. Pinson, II, Juan Carlos Rocha-Alvarez
  • Publication number: 20180261431
    Abstract: A tuning apparatus enables control of the flow of radio-frequency (RF) current in a plasma processing chamber at multiple RF frequencies. The apparatus is configured to provide a first path to ground from the chamber for RF power at a first frequency and a second path to ground from the chamber for RF power at a second frequency, where the first path to ground and the second path to ground each include a variable energy storage element. When adjusted, the variable energy storage element in the first path to ground modifies the impedance of the first path to ground, thereby changing RF current flow through the first path to ground at the first frequency. Adjusting the variable energy storage element in the second path to ground modifies the impedance of the second path to ground, thereby changing RF current flow through the second path to ground at the second frequency.
    Type: Application
    Filed: March 13, 2018
    Publication date: September 13, 2018
    Inventors: Edward P. HAMMOND, IV, Abdul Aziz KHAJA, Tza-Jing GUNG
  • Publication number: 20180231587
    Abstract: A voltage-current sensor enables more accurate measurement of the voltage, current, and phase of RF power that is delivered to high-temperature processing region. The sensor includes a planar body comprised of a non-organic, electrically insulative material, a measurement opening formed in the planar body, a voltage pickup disposed around the measurement opening, and a current pickup disposed around the measurement opening. Because of the planar configuration and material composition of the sensor, the sensor can be disposed proximate to or in contact with a high-temperature surface of a plasma processing chamber.
    Type: Application
    Filed: February 9, 2018
    Publication date: August 16, 2018
    Inventors: Zheng John YE, Jay D. PINSON, II, Juan Carlos ROCHA, Abdul Aziz KHAJA
  • Publication number: 20180061721
    Abstract: Implementations of the present disclosure generally relate to methods for processing substrates, and more particularly, to methods for predicting, quantifying and correcting process drift. In one implementation, the method includes performing a design of experiments (DOE) in a process chamber to obtain sensor readings and film properties at multiple locations on a substrate for every adjustable process control change associated with the process chamber, building a regression model for each location on the substrate using the sensor readings and film properties obtained from the DOE, tracking changes in sensor readings during production, identifying drifting in sensor readings that can lead to a change in film properties using the regression model, and adjusting one or more process controls to correct the drifting in sensor readings to minimize the change in film properties.
    Type: Application
    Filed: August 25, 2017
    Publication date: March 1, 2018
    Inventor: Abdul Aziz KHAJA
  • Publication number: 20180046088
    Abstract: Implementations described herein generally relate to methods for leveling a component above a substrate. In one implementation, a test substrate is placed on a substrate support inside of a processing chamber. A component, such as a mask, is located above the substrate. The component is lowered to a position so that the component and the substrate are in contact. The component is then lifted and the particle distribution on the test substrate is reviewed. Based on the particle distribution, the component may be adjusted. A new test substrate is placed on the substrate support inside of the processing chamber, and the component is lowered to a position so that the component and the new test substrate are in contact. The particle distribution on the new test substrate is reviewed. The process may be repeated until a uniform particle distribution is shown on a test substrate.
    Type: Application
    Filed: August 11, 2017
    Publication date: February 15, 2018
    Inventors: Hiroyuki OGISO, Jianhua ZHOU, Zonghui SU, Juan Carlos ROCHA-ALVAREZ, Jeongmin LEE, Karthik Thimmavajjula NARASIMHA, Rick GILBERT, Sang Heon PARK, Abdul Aziz KHAJA, Vinay PRABHAKAR
  • Publication number: 20170352569
    Abstract: A heated support assembly is disclosed which includes a body comprising aluminum nitride doped with magnesium oxide having a volume resistivity of about 1×1010 ?-cm at about 600 degrees Celsius, an electrode embedded in the body, and a heater mesh embedded in the body.
    Type: Application
    Filed: June 2, 2017
    Publication date: December 7, 2017
    Inventors: Abdul Aziz KHAJA, Xing LIN, Edward P. HAMMOND, IV, Juan Carlos ROCHA-ALVAREZ, Chidambara A. RAMALINGAM, Ganesh BALASUBRAMANIAN, Ren-Guan DUAN, Jianhua ZHOU, Jonathan J. STRAHLE
  • Publication number: 20170345698
    Abstract: A support assembly for a semiconductor processing chamber is provided and includes a body comprising a heater, and a puck coupled to the body, the puck comprising a chucking electrode embedded in a dielectric material, wherein, when a radio frequency power of about 13.56 megahertz is applied to a substrate receiving surface of the body, an electrical resistance (R) of the body is about 0.460 Ohms, or less, and an electrical reactance (X) of the body is about 10.9 Ohms, or greater.
    Type: Application
    Filed: May 26, 2017
    Publication date: November 30, 2017
    Inventors: Edward P. HAMMOND, IV, Zheng John YE, Abdul Aziz KHAJA
  • Publication number: 20170287752
    Abstract: Embodiments of the disclosure provide an integrated system for performing a measurement process and a lithographic overlay error correction process on a semiconductor substrate in a single processing system. In one embodiment, a processing system includes at least a load lock chamber, a transfer chamber coupled to the load lock chamber, an ion implantation processing chamber coupled to or in the transfer chamber, and a metrology tool coupled to the transfer chamber, wherein the metrology tool is adapted to obtain stress profile or an overlay error on a substrate disposed in the metrology tool.
    Type: Application
    Filed: February 28, 2017
    Publication date: October 5, 2017
    Inventors: Ludovic GODET, Mehdi VAEZ-IRAVANI, Todd EGAN, Mangesh BANGAR, Concetta RICCOBENE, Abdul Aziz KHAJA, Srinivas D. NEMANI, Ellie Y. YIEH, Sean S. KANG
  • Patent number: 9711360
    Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-containing amorphous carbon films on a substrate with reduced particle contamination. In one implementation, the method comprises flowing a hydrocarbon-containing gas mixture into a processing volume having a substrate positioned therein, flowing a boron-containing gas mixture into the processing volume, stabilizing the pressure in the processing volume for a predefined RF-on delay time period, generating an RF plasma in the processing volume after the predefined RF-on delay time period expires to deposit a boron-containing amorphous film on the substrate, exposing the processing volume of the process chamber to a dry cleaning process and depositing an amorphous boron season layer over at least one surface in the processing volume of the process chamber.
    Type: Grant
    Filed: July 6, 2016
    Date of Patent: July 18, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Ziqing Duan, Kwangduk Douglas Lee, Abdul Aziz Khaja, Amit Kumar Bansal, Bok Hoen Kim, Prashant Kumar Kulshreshtha
  • Publication number: 20170069464
    Abstract: Implementations of the present disclosure generally relate to methods and apparatus for generating and controlling plasma, for example RF filters, used with plasma chambers. In one implementation, a plasma processing apparatus is provided. The plasma processing apparatus comprises a chamber body, a powered gas distribution manifold enclosing a processing volume and a radio frequency (RF) filter. A pedestal having a substrate-supporting surface is disposed in the processing volume. A heating assembly comprising one or more heating elements is disposed within the pedestal for controlling a temperature profile of the substrate-supporting surface. A tuning assembly comprising a tuning electrode is disposed within the pedestal between the one or more heating elements and the substrate-supporting surface. The RF filter comprises an air core inductor, wherein at least one of the heating elements, the tuning electrode, and the gas distribution manifold is electrically coupled to the RF filter.
    Type: Application
    Filed: July 19, 2016
    Publication date: March 9, 2017
    Inventors: Zheng John YE, Abdul Aziz KHAJA, Amit Kumar BANSAL, Kwangduk Douglas LEE, Xing LIN, Jianhua ZHOU, Addepalli Sai SUSMITA, Juan Carlos ROCHA-ALVAREZ
  • Patent number: 9589773
    Abstract: Embodiments described herein relate to methods for determining a cleaning endpoint. A first plasma cleaning process may be performed in a clean chamber environment to determine a clean time function defined by a first slope. A second plasma cleaning process may be performed in an unclean chamber environment to determine a clean time function defined by a second slope. The first and second slope may be compared to determine a clean endpoint time.
    Type: Grant
    Filed: April 22, 2016
    Date of Patent: March 7, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Sidharth Bhatia, Anjana M. Patel, Abdul Aziz Khaja
  • Publication number: 20170062218
    Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of boron-containing amorphous carbon films on a substrate with reduced particle contamination. In one implementation, the method comprises flowing a hydrocarbon-containing gas mixture into a processing volume having a substrate positioned therein, flowing a boron-containing gas mixture into the processing volume, stabilizing the pressure in the processing volume for a predefined RF-on delay time period, generating an RF plasma in the processing volume after the predefined RF-on delay time period expires to deposit a boron-containing amorphous film on the substrate, exposing the processing volume of the process chamber to a dry cleaning process and depositing an amorphous boron season layer over at least one surface in the processing volume of the process chamber.
    Type: Application
    Filed: July 6, 2016
    Publication date: March 2, 2017
    Inventors: Ziqing DUAN, Kwangduk Douglas LEE, Abdul Aziz KHAJA, Amit Kumar BANSAL, Bok Hoen KIM, Prashant Kumar KULSHRESHTHA
  • Publication number: 20160358804
    Abstract: The present disclosure generally relates to processing chamber seasoning layers having a graded composition. In one example, the seasoning layer is a boron-carbon-nitride (BCN) film. The BCN film may have a greater composition of boron at the base of the film. As the BCN film is deposited, the boron concentration may approach zero, while the relative carbon and nitrogen concentration increases. The BCN film may be deposited by initially co-flowing a boron precursor, a carbon precursor, and a nitrogen precursor. After a first period of time, the flow rate of the boron precursor may be reduced. As the flow rate of boron precursor is reduced, RF power may be applied to generate a plasma during deposition of the seasoning layer.
    Type: Application
    Filed: May 27, 2016
    Publication date: December 8, 2016
    Inventors: Prashant Kumar KULSHRESHTHA, Ziqing DUAN, Abdul Aziz KHAJA, Zheng John YE, Amit Kumar BANSAL
  • Publication number: 20160314944
    Abstract: Embodiments described herein relate to methods for determining a cleaning endpoint. A first plasma cleaning process may be performed in a clean chamber environment to determine a clean time function defined by a first slope. A second plasma cleaning process may be performed in an unclean chamber environment to determine a clean time function defined by a second slope. The first and second slope may be compared to determine a clean endpoint time.
    Type: Application
    Filed: April 22, 2016
    Publication date: October 27, 2016
    Inventors: Sidharth BHATIA, Anjana M. PATEL, Abdul Aziz KHAJA
  • Patent number: 9466469
    Abstract: A plasma source is provided including a core element extending from a first end to a second end along a first axis. The plasma source further includes one or more coils disposed around respective one or more first portions of the core element. The plasma source further includes a plasma block having one or more interior walls at least partially enclosing an annular plasma-generating volume that is disposed around a second portion of the core element. The annular plasma-generating volume includes a first region that is symmetrical about a plurality of perpendicular axes that are perpendicular to a first point positioned on the first axis, the first region having a width in a direction parallel to the first axis and a depth in a direction perpendicular from the first axis. The first region has a width that is at least three times greater than the depth of the first region.
    Type: Grant
    Filed: March 14, 2016
    Date of Patent: October 11, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Abdul Aziz Khaja, Mohamad A. Ayoub, Ramesh Bokka, Jay D. Pinson, II, Juan Carlos Rocha-Alvarez