Patents by Inventor Abraham Rudolf Balkenende

Abraham Rudolf Balkenende has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140301897
    Abstract: The invention relates to the treatment of a medium, particularly to the purification of water, air, or surfaces. A photo-active layer (120) is disposed on an energy-transfer surface (111) of a substrate (110). Thus light energy transfer from said substrate (110) to the photoactive layer (120) is directly achieved without an intermediate passage through the medium. The substrate (110) may preferably be a waveguide from which light energy is transferred into the photoactive layer (120) via evanescent waves. Moreover, the optical coupling between the substrate (110) and the photoactive layer (120) may spatially vary.
    Type: Application
    Filed: October 26, 2011
    Publication date: October 9, 2014
    Inventors: Eefje Janet Arts-Hornix, Abraham Rudolf Balkenende, Cornelis Reinder Ronda
  • Patent number: 8662672
    Abstract: The invention relates to a lighting device (1), an array of such lighting devices and an optical projection device comprising such lighting device. The lighting device, comprises at least one laser source (4) for generating laser radiation, wherein the laser source is optically coupled to an optical element (7, 8, 9) comprising at least one luminescent material, suitable for emitting luminescent radiation upon laser excitation by the laser radiation, wherein the optical element is provided with at least one reflector for directing the radiation from the luminescent dot through an emission window of the optical element. The lighting device is particularly useful in a projector and other lighting applications.
    Type: Grant
    Filed: October 3, 2008
    Date of Patent: March 4, 2014
    Assignee: Koninklijke Philips N.V.
    Inventors: Rifat Ata Mustafa Hikmet, Abraham Rudolf Balkenende
  • Publication number: 20130314885
    Abstract: The present invention relates to a printed circuit board assembly (10), said printed circuit board assembly comprising: a substrate (100); two or more electronic components which are categorized, wherein each component is secured to the substrate by securing means having a different predetermined thermal-release temperature, depending on which category said component belongs to. The invention furthermore relates to a method of assembling the printed circuit board assembly and a method of disassembling the printed circuit board assembly according to the invention.
    Type: Application
    Filed: January 30, 2012
    Publication date: November 28, 2013
    Applicant: KONINKLIJKE PHILIPS N.V.
    Inventors: Hangfeng Ji, Abraham Rudolf Balkenende, Hong Chen
  • Publication number: 20130286633
    Abstract: Proposed is an illumination device (100), comprising a light source (110) such as an LED or a laser diode, a wavelength conversion medium (120) such as a phosphor, and a periodic antenna array (300) made of a highly polarisable material such as a metal. The light source emits primary wavelength light that at least partially is converted in secondary wavelength light by the wavelength conversion medium. The periodic antenna array is positioned in close proximity to the wavelength conversion medium and functions to enhance the efficiency of the absorption and/or emission processes in the wavelength conversion medium through the coupling of the incident primary wavelength light or the emitted secondary light to surface lattice resonances that arise from the diffractive coupling of localized surface plasmon polaritons in the individual antennas of the array.
    Type: Application
    Filed: January 16, 2012
    Publication date: October 31, 2013
    Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.
    Inventors: Said Rahimzadeh Kalaleh Rodriguez, Jaime Gomez Rivas, Abraham Rudolf Balkenende, Marcus Antonius Verschuuren, Gabriel Sebastian Lozano Barbero, Shunsuke Murai
  • Publication number: 20130214251
    Abstract: The present invention discloses a method for manufacturing a solid state light emitting device having a plurality of light-sources, the method comprising the steps of: providing a substrate having a growth surface; providing a mask layer on the growth surface, the mask layer having a plurality of openings through which the growth surface is exposed, wherein a largest lateral dimension of each of said openings is less than 0.
    Type: Application
    Filed: October 20, 2011
    Publication date: August 22, 2013
    Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.
    Inventors: Abraham Rudolf Balkenende, Marcus Antonius Verschuuren, George Immink
  • Patent number: 7915709
    Abstract: The invention relates to a semiconductor device (10) with a semiconductor body (12) comprising a bipolar transistor with an emitter region, a base region and a collector region (1, 2, 3) of, respectively, a first conductivity type, a second conductivity type opposite to the first conductivity type, and the first conductivity type. One of the emitter or collector regions (1, 3) comprises a nanowire (30). The base region (2) has been formed from a layer (20) at the surface of the semiconductor body (12); the other one (3, 1) of the emitter or collector regions (1, 3) has been formed in the semiconductor body (12) below the base region (2). The emitter or collector region (1, 3) comprising the nanowire (30) has been provided on the surface of the semiconductor body (12) such that its longitudinal axis extends perpendicularly to the surface.
    Type: Grant
    Filed: July 7, 2005
    Date of Patent: March 29, 2011
    Assignee: NXP B.V.
    Inventors: Godefridus Adrianus Maria Hurkx, Prabhat Agarwal, Abraham Rudolf Balkenende, Petrus Hubertus Cornelis Magnee, Melanie Maria Hubertina Wagemans, Erik Petrus Antonius Maria Bakkers, Erwin Hijzen
  • Patent number: 7838795
    Abstract: The invention relates to a method of breaking a substrate of a brittle material, the method comprising the steps of providing a substrate (1) of a brittle material, heating the substrate with a laser beam (3) to create a heated spot on the substrate, moving the laser beam and the substrate with respect to each other to create a line of heated spots on the substrate (2), cooling the heated spots on the substrate by locally applying a cooling medium (4) behind the heated spots such that a micro-crack is propagated in the line of heated spots, and breaking the substrate along the line of the propagated micro-cracks by applying a mechanical force on the substrate wherein, the cooling medium comprises an aqueous surfactant solution. The surfactants will connect to the broken siloxane bonds inside the surface cracks. Then recombination and healing of the broken siloxane bonds will not occur and the required breaking load will remain constant over time.
    Type: Grant
    Filed: July 18, 2003
    Date of Patent: November 23, 2010
    Assignee: Mitsuboshi Diamond Industrial Co., Ltd.
    Inventors: Rudolf Heinrich Brzesowsky, Abraham Rudolf Balkenende, Raymond Gijsbertus Anthonius Van Agthoven, Petrus Henricus Maria Timmermans, Nicolaas Petrus Willard
  • Patent number: 7838368
    Abstract: A transistor device is formed of a continuous linear nanostructure having a source region, a drain region and a channel region between the source and drain regions. The source (20) and drain (26) regions are formed of nanowire ania the channel region (24) is in the form of a nanotube. An insulated gate (32) is provided adjacent to the channel region (24) for controlling conduction i ni the channel region between the source and drain regions.
    Type: Grant
    Filed: July 12, 2005
    Date of Patent: November 23, 2010
    Assignee: NXP B.V.
    Inventors: Radu Surdeanu, Prabhat Agarwal, Abraham Rudolf Balkenende, Erik P. A. M. Bakkers
  • Patent number: 7825032
    Abstract: The method of fabricating semiconducting nanowires having a desired wire diameter includes providing pre-fabricated semiconducting nanowires, at least one pre-fabricated nanowire having a wire diameter larger than the desired wire diameter (d); and reducing the wire diameter of the at least one pre-fabricated nanowire by etching. The etching is induced by light which is absorbed by the at least one pre-fabricated nanowire. The spectrum of the light is chosen such that the absorption of the at least one pre-fabricated nanowire is significantly reduced when the at least one pre-fabricated nanowire reaches the desired wire diameter.
    Type: Grant
    Filed: December 3, 2004
    Date of Patent: November 2, 2010
    Assignee: Koninklijke Philips Electronics N.V.
    Inventors: Erik Petrus Antonius Maria Bakkers, Louis Felix Feiner, Abraham Rudolf Balkenende
  • Patent number: 7804249
    Abstract: The present invention relates to a light-transmitting substrate (1) which is at least provided with a light-absorbing coating (3). The light-absorbing coating comprises stabilized pigments which are incorporated in a sol-gel matrix. The light absorbing coating comprises silica particles having a size between 5 and 100 nanometers and alumina particles having a size between 5 and 50 nanometers. The total volume concentration of pigments, silica and alumina particles in the light-absorbing coating is between 20 and 65 percent. The volume concentration of silica particles is between 5 and 40 percent and the volume concentration of alumina particles between 1 and 15 percent.
    Type: Grant
    Filed: September 12, 2005
    Date of Patent: September 28, 2010
    Assignee: Koninklijke Philips Electronics N.V.
    Inventors: Matthieu Dhenaut, Abraham Rudolf Balkenende, Virginie Mercier, Jean-Sebastien Straetmans
  • Publication number: 20100231863
    Abstract: The invention relates to a lighting device (1), an array of such lighting devices and an optical projection device comprising such lighting device. The lighting device, comprises at least one laser source (4) for generating laser radiation, wherein the laser source is optically coupled to an optical element (7, 8, 9) comprising at least one luminescent material, suitable for emitting luminescent radiation upon laser excitation by the laser radiation, wherein the optical element is provided with at least one reflector for directing the radiation from the luminescent dot through an emission window of the optical element. The lighting device is particularly useful in a projector and other lighting applications.
    Type: Application
    Filed: October 3, 2008
    Publication date: September 16, 2010
    Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.
    Inventors: Rifat Ata Mustafa Hikmet, Abraham Rudolf Balkenende
  • Patent number: 7768081
    Abstract: A semiconductor device is provided in which energy band gap can be electrically varied. The device includes nanowires embedded in a material that exhibits a deformation when properly addressed, e.g., a piezoelectric material such as lead zirconate titanate (PZT), aluminum nitride (A1N) or zinc oxide (Zn0). The nanowires can be reversibly strained by applying a local deformation to the piezoelectric material by applying a voltage to the material. The resulting band gap variation can be utilized to tune the color of the light emitted from e.g., a LED or a laser. Further, contact resistance in semiconductor junctions can be controlled, e.g., for use in memories and switches.
    Type: Grant
    Filed: October 20, 2005
    Date of Patent: August 3, 2010
    Assignee: Koninklijke Philips Electronics N V
    Inventors: Abraham Rudolf Balkenende, Erik Petrus Antonius Maria Bakkers, Louis Felix Feiner
  • Publication number: 20090200536
    Abstract: The electric device (100) according to the invention comprises a layer (107) of a memory material which has an electrical resistivity switchable between a first value and a second value. The memory material may be a phase change material. The electric device (100) further comprises a set of nanowires (NW) electrically connecting a first terminal (172) of the electric device and the layer (107) of memory material thereby enabling conduction of an electric current from the first terminal via the nanowires (NW) and the layer (107) of memory material to a second terminal (272) of the electric device. Each nanowire (NW) electrically contacts the layer (107) of memory material in a respective contact area. All contact areas are substantially identical. The method according to the invention is suited to manufacture the electric device (100) according to the invention.
    Type: Application
    Filed: June 28, 2005
    Publication date: August 13, 2009
    Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.
    Inventors: Robertus Theodorus Franciscus Van Schaijk, Prabhat Agarwal, Erik Petrus Antonius Maria Bakkers, Martijn Henri Richard Lankhorst, Michiel Jos Van Duuren, Abraham Rudolf Balkenende, Louis Felix Feiner, Pierre Hermanus Woerlee
  • Publication number: 20090200641
    Abstract: The invention relates to a semiconductor device (10) with a semiconductor body (12) comprising a bipolar transistor with an emitter region, a base region and a collector region (1, 2, 3) of, respectively, a first conductivity type, a second conductivity type opposite to the first conductivity type, and the first conductivity type. One of the emitter or collector regions (1, 3) comprises a nanowire (30). The base region (2) has been formed from a layer (20) at the surface of the semiconductor body (12); the other one (3, 1) of the emitter or collector regions (1, 3) has been formed in the semiconductor body (12) below the base region (2). The emitter or collector region (1, 3) comprising the nanowire (30) has been provided on the surface of the semiconductor body (12) such that its longitudinal axis extends perpendicularly to the surface.
    Type: Application
    Filed: July 7, 2005
    Publication date: August 13, 2009
    Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.
    Inventors: Godefridus Adrianus Maria Hurkx, Prabhat Agarwal, Abraham Rudolf Balkenende, Petrus Hubertus Cornelis Magnee, Melanie Maria Hubertina Wagemans, Erik Petrus Antonius Maria Bakkers, Erwin Hijzen
  • Patent number: 7550755
    Abstract: The present invention relates to a semiconductor device in which energy band gap can be reversibly varied. An idea of the present invention is to provide a device, which is based on a semiconducting material (306) in mechanical contact with a material that exhibits a reversible volume change when properly addressed, e.g. a phase change material (307). The device can, for example, be implemented in light emitting, switching and memory in applications. The semiconducting material can be reversibly strained by applying a local volume expansion to the phase change material. The resulting band gap variation of the semiconducting material can be utilized to tune the color of the light emitted from e.g. an LED or a laser. In other fields of application, contact resistance in semiconductor junctions can be controlled, and this feature is highly advantageous in memories and switches.
    Type: Grant
    Filed: October 20, 2005
    Date of Patent: June 23, 2009
    Assignee: Philips Lumiled Lighting Co., LLC
    Inventors: Abraham Rudolf Balkenende, Erik Petrus Antonius Maria Bakkers, Louis Felix Feiner
  • Publication number: 20090121213
    Abstract: The present invention relates to a semiconductor device in which energy band gap can be electrically varied. An idea of the present invention is to provide a device, which is based on nanowires (306) embedded in a material (307) that exhibits a deformation when properly addressed, e.g. a piezoelectric material such as lead zirconate titanate (PZT), aluminum nitride (AIN) or zinc oxide (ZnO). The nanowires (306) can be reversibly strained by applying a local deformation to the piezoelectric material (307) by means of applying a voltage to the material. The resulting band gap variation can be utilized to tune the color of the light emitted from e.g. a LED or a laser. This is a consequence of the fact that the band gap is proportional to the frequency of the emitted light. In other fields of application, contact resistance in semiconductor junctions can be controlled, and this feature is highly advantageous in memories and switches.
    Type: Application
    Filed: October 20, 2005
    Publication date: May 14, 2009
    Applicant: KONINKLIJKE PHILIPS ELECTRONICS, N.V.
    Inventors: Abraham Rudolf Balkenende, Erik Petrus Antonius Maria Bakkers, Louis Felix Feiner
  • Publication number: 20090121209
    Abstract: The present invention relates to a semiconductor device in which energy band gap can be reversibly varied. An idea of the present invention is to provide a device, which is based on a semiconducting material (306) in mechanical contact with a material that exhibits a reversible volume change when properly addressed, e.g. a phase change material (307). The device can, for example, be implemented in light emitting, switching and memory in applications. The semiconducting material can be reversibly strained by applying a local volume expansion to the phase change material. The resulting band gap variation of the semiconducting material can be utilized to tune the color of the light emitted from e.g. an LED or a laser. In other fields of application, contact resistance in semiconductor junctions can be controlled, and this feature is highly advantageous in memories and switches.
    Type: Application
    Filed: October 20, 2005
    Publication date: May 14, 2009
    Applicant: KONINKLIJKE PHILIPS ELECTRONICS, N.V.
    Inventors: Abraham Rudolf Balkenende, Erik Petrus Antonius Maria Bakkers, Louis Felix Feiner
  • Publication number: 20080224115
    Abstract: The method of fabricating a set of semiconducting nanowires (10) having a desired wire diameter (d) comprises the steps of providing a set of pre-fabricated semiconducting nanowires (10?), at least one pre-fabricated semiconducting nanowire having a wire diameter (d?) larger than the desired wire diameter (d), and reducing the wire diameter of the at least one pre-fabricated nanowire (10?) by etching, the etching being induced by light which is absorbed by the at least one pre-fabricated nanowire (10?), a spectrum of the light being chosen such that the absorption of the at least one pre-fabricated nanowire being significantly reduced when the at least one pre-fabricated nanowire reaches the desired wire diameter (d). The electric device (100) may comprise a set of nanowires (10) having the desired wire diameter (d). The apparatus (29) may be used to execute the method according to the invention.
    Type: Application
    Filed: December 3, 2004
    Publication date: September 18, 2008
    Inventors: Erik Petrus Antonius Maria Bakkers, Louis Felix Feiner, Abraham Rudolf Balkenende
  • Publication number: 20040238901
    Abstract: The electronic device with a layer of mesoporous silica can be obtained by applying a composition comprising alkoxysilane, a surfactant and a solvent onto a substrate, and by subsequently removing the surfactant and the solvent. The customary dehydroxylation treatment is not necessary if the composition contains a mixture of tetra-alkoxysilane, particularly teatraethoxyorthosilicate (TEOS), and an alkyl-substituted alkoxysilane, particularly a phenyl-substituted, methyl-substituted or ethyl-substituted trialkoxysilane. If both silanes are present in a molar ratio of approximately 1:1, a layer with a dielectric constant of 2.5 or less is obtained.
    Type: Application
    Filed: March 8, 2004
    Publication date: December 2, 2004
    Inventors: Abraham Rudolf Balkenende, Femke Karina De Theije, Jan Cornelis Kriege