Abstract: A system, method, and apparatus for gathering operating information from a lighting product. The lighting product includes an embedded persistent memory unit and processor configured to store data operating parameters in the memory unit. The memory unit may be accessed up through and after end-of-life of the lighting product. The memory unit may be physically removable, or may be accessible via a wired or wireless interface such as an NFC tag. The lighting product memory unit is accessed at an in-store kiosk by plugging the lighting product into a socket or swiping the lighting product with an NFC tag reader. Data recovered from the memory unit is used to select and display a range of suitable replacement lighting products from a database.

Abstract: The present invention discloses a method for manufacturing a solid state light emitting device having a plurality of light-sources, the method comprising the steps of: providing a substrate having a growth surface; providing a mask layer on the growth surface, the mask layer having a plurality of openings through which the growth surface is exposed, wherein a largest lateral dimension of each of said openings is less than 0.

Abstract: The invention relates to the treatment of a medium, particularly to the purification of water, air, or surfaces. A photo-active layer (120) is disposed on an energy-transfer surface (111) of a substrate (110). Thus light energy transfer from said substrate (110) to the photoactive layer (120) is directly achieved without an intermediate passage through the medium. The substrate (110) may preferably be a waveguide from which light energy is transferred into the photoactive layer (120) via evanescent waves. Moreover, the optical coupling between the substrate (110) and the photoactive layer (120) may spatially vary.

Abstract: The invention relates to a lighting device (1), an array of such lighting devices and an optical projection device comprising such lighting device. The lighting device, comprises at least one laser source (4) for generating laser radiation, wherein the laser source is optically coupled to an optical element (7, 8, 9) comprising at least one luminescent material, suitable for emitting luminescent radiation upon laser excitation by the laser radiation, wherein the optical element is provided with at least one reflector for directing the radiation from the luminescent dot through an emission window of the optical element. The lighting device is particularly useful in a projector and other lighting applications.

Abstract: The present invention relates to a printed circuit board assembly (10), said printed circuit board assembly comprising: a substrate (100); two or more electronic components which are categorized, wherein each component is secured to the substrate by securing means having a different predetermined thermal-release temperature, depending on which category said component belongs to. The invention furthermore relates to a method of assembling the printed circuit board assembly and a method of disassembling the printed circuit board assembly according to the invention.

Abstract: Proposed is an illumination device (100), comprising a light source (110) such as an LED or a laser diode, a wavelength conversion medium (120) such as a phosphor, and a periodic antenna array (300) made of a highly polarisable material such as a metal. The light source emits primary wavelength light that at least partially is converted in secondary wavelength light by the wavelength conversion medium. The periodic antenna array is positioned in close proximity to the wavelength conversion medium and functions to enhance the efficiency of the absorption and/or emission processes in the wavelength conversion medium through the coupling of the incident primary wavelength light or the emitted secondary light to surface lattice resonances that arise from the diffractive coupling of localized surface plasmon polaritons in the individual antennas of the array.

Abstract: The present invention discloses a method for manufacturing a solid state light emitting device having a plurality of light-sources, the method comprising the steps of: providing a substrate having a growth surface; providing a mask layer on the growth surface, the mask layer having a plurality of openings through which the growth surface is exposed, wherein a largest lateral dimension of each of said openings is less than 0.

Abstract: The invention relates to a semiconductor device (10) with a semiconductor body (12) comprising a bipolar transistor with an emitter region, a base region and a collector region (1, 2, 3) of, respectively, a first conductivity type, a second conductivity type opposite to the first conductivity type, and the first conductivity type. One of the emitter or collector regions (1, 3) comprises a nanowire (30). The base region (2) has been formed from a layer (20) at the surface of the semiconductor body (12); the other one (3, 1) of the emitter or collector regions (1, 3) has been formed in the semiconductor body (12) below the base region (2). The emitter or collector region (1, 3) comprising the nanowire (30) has been provided on the surface of the semiconductor body (12) such that its longitudinal axis extends perpendicularly to the surface.

Abstract: The invention relates to a method of breaking a substrate of a brittle material, the method comprising the steps of providing a substrate (1) of a brittle material, heating the substrate with a laser beam (3) to create a heated spot on the substrate, moving the laser beam and the substrate with respect to each other to create a line of heated spots on the substrate (2), cooling the heated spots on the substrate by locally applying a cooling medium (4) behind the heated spots such that a micro-crack is propagated in the line of heated spots, and breaking the substrate along the line of the propagated micro-cracks by applying a mechanical force on the substrate wherein, the cooling medium comprises an aqueous surfactant solution. The surfactants will connect to the broken siloxane bonds inside the surface cracks. Then recombination and healing of the broken siloxane bonds will not occur and the required breaking load will remain constant over time.

Abstract: A transistor device is formed of a continuous linear nanostructure having a source region, a drain region and a channel region between the source and drain regions. The source (20) and drain (26) regions are formed of nanowire ania the channel region (24) is in the form of a nanotube. An insulated gate (32) is provided adjacent to the channel region (24) for controlling conduction i ni the channel region between the source and drain regions.

Abstract: The method of fabricating semiconducting nanowires having a desired wire diameter includes providing pre-fabricated semiconducting nanowires, at least one pre-fabricated nanowire having a wire diameter larger than the desired wire diameter (d); and reducing the wire diameter of the at least one pre-fabricated nanowire by etching. The etching is induced by light which is absorbed by the at least one pre-fabricated nanowire. The spectrum of the light is chosen such that the absorption of the at least one pre-fabricated nanowire is significantly reduced when the at least one pre-fabricated nanowire reaches the desired wire diameter.

Abstract: The present invention relates to a light-transmitting substrate (1) which is at least provided with a light-absorbing coating (3). The light-absorbing coating comprises stabilized pigments which are incorporated in a sol-gel matrix. The light absorbing coating comprises silica particles having a size between 5 and 100 nanometers and alumina particles having a size between 5 and 50 nanometers. The total volume concentration of pigments, silica and alumina particles in the light-absorbing coating is between 20 and 65 percent. The volume concentration of silica particles is between 5 and 40 percent and the volume concentration of alumina particles between 1 and 15 percent.

Abstract: The invention relates to a lighting device (1), an array of such lighting devices and an optical projection device comprising such lighting device. The lighting device, comprises at least one laser source (4) for generating laser radiation, wherein the laser source is optically coupled to an optical element (7, 8, 9) comprising at least one luminescent material, suitable for emitting luminescent radiation upon laser excitation by the laser radiation, wherein the optical element is provided with at least one reflector for directing the radiation from the luminescent dot through an emission window of the optical element. The lighting device is particularly useful in a projector and other lighting applications.

Abstract: A semiconductor device is provided in which energy band gap can be electrically varied. The device includes nanowires embedded in a material that exhibits a deformation when properly addressed, e.g., a piezoelectric material such as lead zirconate titanate (PZT), aluminum nitride (A1N) or zinc oxide (Zn0). The nanowires can be reversibly strained by applying a local deformation to the piezoelectric material by applying a voltage to the material. The resulting band gap variation can be utilized to tune the color of the light emitted from e.g., a LED or a laser. Further, contact resistance in semiconductor junctions can be controlled, e.g., for use in memories and switches.

Abstract: The electric device (100) according to the invention comprises a layer (107) of a memory material which has an electrical resistivity switchable between a first value and a second value. The memory material may be a phase change material. The electric device (100) further comprises a set of nanowires (NW) electrically connecting a first terminal (172) of the electric device and the layer (107) of memory material thereby enabling conduction of an electric current from the first terminal via the nanowires (NW) and the layer (107) of memory material to a second terminal (272) of the electric device. Each nanowire (NW) electrically contacts the layer (107) of memory material in a respective contact area. All contact areas are substantially identical. The method according to the invention is suited to manufacture the electric device (100) according to the invention.

Abstract: The invention relates to a semiconductor device (10) with a semiconductor body (12) comprising a bipolar transistor with an emitter region, a base region and a collector region (1, 2, 3) of, respectively, a first conductivity type, a second conductivity type opposite to the first conductivity type, and the first conductivity type. One of the emitter or collector regions (1, 3) comprises a nanowire (30). The base region (2) has been formed from a layer (20) at the surface of the semiconductor body (12); the other one (3, 1) of the emitter or collector regions (1, 3) has been formed in the semiconductor body (12) below the base region (2). The emitter or collector region (1, 3) comprising the nanowire (30) has been provided on the surface of the semiconductor body (12) such that its longitudinal axis extends perpendicularly to the surface.

Abstract: The present invention relates to a semiconductor device in which energy band gap can be reversibly varied. An idea of the present invention is to provide a device, which is based on a semiconducting material (306) in mechanical contact with a material that exhibits a reversible volume change when properly addressed, e.g. a phase change material (307). The device can, for example, be implemented in light emitting, switching and memory in applications. The semiconducting material can be reversibly strained by applying a local volume expansion to the phase change material. The resulting band gap variation of the semiconducting material can be utilized to tune the color of the light emitted from e.g. an LED or a laser. In other fields of application, contact resistance in semiconductor junctions can be controlled, and this feature is highly advantageous in memories and switches.

Abstract: The present invention relates to a semiconductor device in which energy band gap can be reversibly varied. An idea of the present invention is to provide a device, which is based on a semiconducting material (306) in mechanical contact with a material that exhibits a reversible volume change when properly addressed, e.g. a phase change material (307). The device can, for example, be implemented in light emitting, switching and memory in applications. The semiconducting material can be reversibly strained by applying a local volume expansion to the phase change material. The resulting band gap variation of the semiconducting material can be utilized to tune the color of the light emitted from e.g. an LED or a laser. In other fields of application, contact resistance in semiconductor junctions can be controlled, and this feature is highly advantageous in memories and switches.

Abstract: The present invention relates to a semiconductor device in which energy band gap can be electrically varied. An idea of the present invention is to provide a device, which is based on nanowires (306) embedded in a material (307) that exhibits a deformation when properly addressed, e.g. a piezoelectric material such as lead zirconate titanate (PZT), aluminum nitride (AIN) or zinc oxide (ZnO). The nanowires (306) can be reversibly strained by applying a local deformation to the piezoelectric material (307) by means of applying a voltage to the material. The resulting band gap variation can be utilized to tune the color of the light emitted from e.g. a LED or a laser. This is a consequence of the fact that the band gap is proportional to the frequency of the emitted light. In other fields of application, contact resistance in semiconductor junctions can be controlled, and this feature is highly advantageous in memories and switches.

Abstract: The method of fabricating a set of semiconducting nanowires (10) having a desired wire diameter (d) comprises the steps of providing a set of pre-fabricated semiconducting nanowires (10?), at least one pre-fabricated semiconducting nanowire having a wire diameter (d?) larger than the desired wire diameter (d), and reducing the wire diameter of the at least one pre-fabricated nanowire (10?) by etching, the etching being induced by light which is absorbed by the at least one pre-fabricated nanowire (10?), a spectrum of the light being chosen such that the absorption of the at least one pre-fabricated nanowire being significantly reduced when the at least one pre-fabricated nanowire reaches the desired wire diameter (d). The electric device (100) may comprise a set of nanowires (10) having the desired wire diameter (d). The apparatus (29) may be used to execute the method according to the invention.